Variation of Resistance with Composition in the ß-Phase of the H—Pd System at 298 K

Black Phosphorus Field-Effect Transistors with Work Function Tunable Contacts

Black phosphorus (BP) has been recently rediscovered as an elemental two-dimensional (2D) material that shows promising results for next generation electronics and optoelectronics because of its intrinsically superior carrier mobility and small direct band gap. In various 2D field-effect transistors (FETs), the choice of metal contacts is vital to the device performance, and it is a major challenge to reach ultralow contact resistances for highly scaled 2D FETs. Here, we experimentally show the effect of a work function tunable metal contact on the device performance of BP FETs. Using palladium (Pd) as the contact material, we employed the reaction between Pd and H₂ to form a Pd-H alloy that effectively increased the work function of Pd and reduced the Schottky barrier height (Φ_B) in a BP FET. When the Pd-contacted BP FET was exposed to 5% hydrogen concentrated Ar, the contact resistance (R_c) improved between the Pd electrodes and BP from ∼7.10 to ∼1.05 Ω·mm, surpassing all previously reported contact resistances in the literature for BP FETs. Additionally, with exposure to 5% hydrogen, the transconductance of the Pd-contacted BP FET was doubled. The results shown in this study illustrate the significance of choosing the right contact material for high-performance BP FETs in order to realize the real prospect of BP in electronic applications.

Relative Electrical Resistance of Pd Saturated by Gaseous Deuterium in a Wide Pressure Range at 298 K

The relative electrical resistance of Pd-D system as a function of deuterium content at 278 K is presented in the total concentration range available so far. The data include results up to 0.7