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Fauchet P, Ettedgui E, Raisanen A, Brillson L, Seiferth F, Kurinec S, Gao Y, Peng C, Tsybeskov L. Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon? ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-298-271] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractUsing a careful analysis of the properties of light-emitting porous silicon (LEpSi), we conclude that a version of the “smart” quantum confinement model which was first proposed by F. Koch et al [Mat. Res. Soc. Symp. Proc. 283, 197 (1993)] and allows for the existence of surface states and dangling bonds, is compatible with experimental results. Among the new results we present in support of this model, the most striking ones concern the strong infrared photoluminescence that dominates the room temperature cw spectrum after vacuum annealing above 600 K.
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Abstract
AbstractExplanations for the efficient, visible luminescence of porous Si fall broadly into three categories. At the extremes are the pure quantum-well point of view and the molecular agents hypothesis. We make here the case for a model in which the dominant absorption characteristics are those of a quantum well, but luminescence occurs via boundary states on the nanocrystalline particles. This so-called “smart quantum-well” mechanism accounts for the multiple emission bands of porous Si in a natural way. In particular, the infrared band is assigned as an electronic transition to a deep level. From this we determine the conduction band shift with particle size.
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