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Lopez HA, Chan S, Tsybeskov L, Koyama H, Bondarenko VP, Fauchet PM. Integration of Multilayers in Er-Doped Porous Silicon Structures and Advances in 1.5 μm Optoelectronic Devices. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-536-135] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractInfrared photoluminescence (PL) and electroluminescence (EL) from erbium-doped porous silicon (PSi) structures are studied. The PL and EL from the Er-doped PSi structures and the absence of silicon band edge recombination, point defect, and dislocation luminescence bands suggest that the Er-complex centers are the most efficient recombination sites. PSi multilayers with very high reflectivity (R ≥ 90%) in the 1.5 gim range have been incorporated in the structures resulting in a PL enhancement of over 100%. Stable and intense EL is obtained from the Er-doped structures. The EL spectrum is similar to that of the PL, but shifted towards higher energy. The unexpected shift in emission opens up the possibility for erbium related luminescence to encompass a larger part of the optimal wavelength window for fiber optic communications.
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Lopez H, Fauchet P. 1.54 ?m Electroluminescence from Erbium-Doped Porous Silicon Composites for Photonic Applications. ACTA ACUST UNITED AC 2000. [DOI: 10.1002/1521-396x(200011)182:1<413::aid-pssa413>3.0.co;2-7] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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