1
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Liu Y, Liu J, Deng C, Wang B, Xia B, Liang X, Yang Y, Li S, Wang X, Li L, Lan X, Fei P, Zhang J, Gao L, Tang J. Planar Cation Passivation on Colloidal Quantum Dots Enables High-Performance 0.35-1.8 µm Broadband TFT Imager. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313811. [PMID: 38358302 DOI: 10.1002/adma.202313811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 02/05/2024] [Indexed: 02/16/2024]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for broadband photodetectors from visible light to shortwave infrared (SWIR). However, large-size PbS CQDs sensitive to longer SWIR are mainly exposed with nonpolar (100) facets on the surface, which lack robust passivation strategies. Herein, an innovative passivation strategy that employs planar cation, is introduced to enable face-to-face coupling on (100) facets and strengthen halide passivation on (111) facets. The defect density of CQDs film (Eg ≈ 0.74 eV) is reduced from 2.74 × 1015 to 1.04 × 1015 cm-3, coupled with 0.1 eV reduction in the activation energy of defects. The resultant CQDs photodiodes exhibit a low dark current density of 14 nA cm-2 with a high external quantum efficiency (EQE) of 62%, achieving a linear dynamic range of 98 dB, a -3dB bandwidth of 103 kHz and a detectivity of 4.7 × 1011 Jones. The comprehensive performance of the CQDs photodiodes outperforms previously reported CQDs photodiodes operating at >1.6 µm. By monolithically integrated with thin-film transistor (TFT) readout circuit, the broadband CQDs imager covering 0.35-1.8 µm realizes the functions including silicon wafer perspectivity and material discrimination, showing its potential for wide range of applications.
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Affiliation(s)
- Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
| | - Chengjie Deng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Bo Wang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Bing Xia
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Xinyi Liang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Yang Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China
| | - Xihua Wang
- Department of Electrical and Computer Engineering, University of Alberta, Edmonton, T6G 2V4, Canada
| | - Luying Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Peng Fei
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong, 518057, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute, Huazhong University of Science and Technology, 225 Chaoyang New Street, Wenzhou, 325035, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen, Guangdong, 518057, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, 1037 Luoyu Road, Wuhan, 430074, P. R. China
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Wang B, Hu H, Yuan M, Yang J, Liu J, Gao L, Zhang J, Tang J, Lan X. Short-Wave Infrared Detection and Imaging Employing Size-Customized HgTe Nanocrystals. SMALL METHODS 2024:e2301557. [PMID: 38381091 DOI: 10.1002/smtd.202301557] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/04/2024] [Indexed: 02/22/2024]
Abstract
HgTe nanocrystals (NCs) possess advantages including tunable infrared absorption spectra, solution processability, and low fabrication costs, offering new avenues for the advancement of next-generation infrared detectors. In spite of great synthetic advances, it remains essential to achieve customized synthesis of HgTe NCs in terms of industrial applications. Herein, by taking advantage of a high critical nucleation concentration of HgTe NCs, a continuous-dropwise (CD) synthetic approach that features the addition of the anion precursors in a feasible drop-by-drop fashion is demonstrated. The slow reaction dynamics enable size-customized synthesis of HgTe NCs with sharp band tails and wide absorption range fully covering the short- and mid-infrared regions. More importantly, the intrinsic advantages of CD process ensure high-uniformity and scale-up synthesis from batch to batch without compromising the excitonic features. The resultant HgTe nanocrystal photodetectors show a high room-temperature detectivity of 8.1 × 1011 Jones at 1.7 µm cutoff absorption edge. This CD approach verifies a robust method for controlled synthesis of HgTe NCs and might have important implications for scale-up synthesis of other nanocrystal materials.
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Affiliation(s)
- Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Mohan Yuan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Jianbing Zhang
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
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Tanghe I, Samoli M, Wagner I, Cayan SA, Khan AH, Chen K, Hodgkiss J, Moreels I, Thourhout DV, Hens Z, Geiregat P. Optical gain and lasing from bulk cadmium sulfide nanocrystals through bandgap renormalization. NATURE NANOTECHNOLOGY 2023; 18:1423-1429. [PMID: 37798564 DOI: 10.1038/s41565-023-01521-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Accepted: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Strongly confined colloidal quantum dots have been investigated for low-cost light emission and lasing for nearly two decades. However, known materials struggle to combine technologically relevant metrics of low-threshold and long inverted-state lifetime with a material gain coefficient fit to match cavity losses, particularly under electrical excitation. Here we show that bulk nanocrystals of CdS combine an exceptionally large material gain of 50,000 cm-1 with best-in-class gain thresholds below a single exciton per nanocrystal and 3 ns gain lifetimes not limited by non-radiative Auger processes. We quantitatively account for these findings by invoking a strong bandgap renormalization effect, unobserved in nanocrystals to date, to the best of our knowledge. Next, we demonstrate broadband amplified spontaneous emission and lasing under quasi-continuous-wave conditions. Our results highlight the prospects of bulk nanocrystals for lasing from solution-processable materials.
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Affiliation(s)
- Ivo Tanghe
- Photonics Research Group, Ghent University, Gent, Belgium
- NoLIMITS Center For Non-Linear Microscopy and Spectroscopy, Ghent University, Gent, Belgium
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium
| | - Margarita Samoli
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium
| | - Isabella Wagner
- School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
- MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington, New Zealand
| | - Servet Ataberk Cayan
- NoLIMITS Center For Non-Linear Microscopy and Spectroscopy, Ghent University, Gent, Belgium
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium
| | - Ali Hossain Khan
- Department of Chemical and Biological Sciences, S. N. Bose National Centre for Basic Sciences, Kolkata, India
- Ghent University, Physics and Chemistry of Nanostructures, Gent, Belgium
| | - Kai Chen
- MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington, New Zealand
- Robinson Research Institute, Victoria University of Wellington, Wellington, New Zealand
- The Dodd-Walls Centre for Photonic and Quantum Technologies, University of Otago, Dunedin, New Zealand
| | - Justin Hodgkiss
- School of Chemical and Physical Sciences, Victoria University of Wellington, Wellington, New Zealand
- MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington, New Zealand
| | - Iwan Moreels
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium
| | - Dries Van Thourhout
- Photonics Research Group, Ghent University, Gent, Belgium
- NoLIMITS Center For Non-Linear Microscopy and Spectroscopy, Ghent University, Gent, Belgium
| | - Zeger Hens
- NoLIMITS Center For Non-Linear Microscopy and Spectroscopy, Ghent University, Gent, Belgium
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium
| | - Pieter Geiregat
- NoLIMITS Center For Non-Linear Microscopy and Spectroscopy, Ghent University, Gent, Belgium.
- Physics and Chemistry of Nanostructures, Ghent University, Gent, Belgium.
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4
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Al Mahfuz MM, Park J, Islam R, Ko DK. Colloidal Ag 2Se intraband quantum dots. Chem Commun (Camb) 2023; 59:10722-10736. [PMID: 37606169 DOI: 10.1039/d3cc02203j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
With the emergence of the Internet of Things, wearable electronics, and machine vision, the exponentially growing demands for miniaturization, energy efficiency, and cost-effectiveness have imposed critical requirements on the size, weight, power consumption and cost (SWaP-C) of infrared detectors. To meet this demand, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared, intraband colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. In this Feature Article, we provide a focused review on the development of sensors based on Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.
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Affiliation(s)
- Mohammad Mostafa Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Junsung Park
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Rakina Islam
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
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5
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Liu J, Liu P, Shi T, Ke M, Xiong K, Liu Y, Chen L, Zhang L, Liang X, Li H, Lu S, Lan X, Niu G, Zhang J, Fei P, Gao L, Tang J. Flexible and broadband colloidal quantum dots photodiode array for pixel-level X-ray to near-infrared image fusion. Nat Commun 2023; 14:5352. [PMID: 37660051 PMCID: PMC10475073 DOI: 10.1038/s41467-023-40620-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Accepted: 08/02/2023] [Indexed: 09/04/2023] Open
Abstract
Combining information from multispectral images into a fused image is informative and beneficial for human or machine perception. Currently, multiple photodetectors with different response bands are used, which require complicated algorithms and systems to solve the pixel and position mismatch problem. An ideal solution would be pixel-level multispectral image fusion, which involves multispectral image using the same photodetector and circumventing the mismatch problem. Here we presented the potential of pixel-level multispectral image fusion utilizing colloidal quantum dots photodiode array, with a broadband response range from X-ray to near infrared and excellent tolerance for bending and X-ray irradiation. The colloidal quantum dots photodiode array showed a specific detectivity exceeding 1012 Jones in visible and near infrared range and a favorable volume sensitivity of approximately 2 × 105 μC Gy-1 cm-3 for X-ray irradiation. To showcase the advantages of pixel-level multispectral image fusion, we imaged a capsule enfolding an iron wire and soft plastic, successfully revealing internal information through an X-ray to near infrared fused image.
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Affiliation(s)
- Jing Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peilin Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Tailong Shi
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Mo Ke
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Kao Xiong
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Yuxuan Liu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Long Chen
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Linxiang Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Xinyi Liang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Hao Li
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
| | - Shuaicheng Lu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Guangda Niu
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Jianbing Zhang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China
| | - Peng Fei
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China
- Optical Valley Laboratory, 430074, Wuhan, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, 225 Chaoyang New Street, 325105, Wenzhou, P. R. China.
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
- Optical Valley Laboratory, 430074, Wuhan, P. R. China.
- National Engineering Research Center for Laser Processing, 1037 Luoyu Road, 430074, Wuhan, P. R. China.
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6
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Tian Y, Luo H, Chen M, Li C, Kershaw SV, Zhang R, Rogach AL. Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications. NANOSCALE 2023; 15:6476-6504. [PMID: 36960839 DOI: 10.1039/d2nr07309a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.
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Affiliation(s)
- Yuanyuan Tian
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Hongqiang Luo
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Mengyu Chen
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Cheng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
| | - Rong Zhang
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, P. R. China
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen 361005, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
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7
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O’Neill SW, Krauss TD. Synthetic Mechanisms in the Formation of SnTe Nanocrystals. J Am Chem Soc 2022; 144:6251-6260. [PMID: 35348326 PMCID: PMC9011400 DOI: 10.1021/jacs.1c11697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
![]()
Infrared active colloidal
semiconducting nanocrystals (NCs) are
important for applications including photodetectors and photovoltaics.
While much research has been conducted on nanocrystalline materials
such as the Pb and Hg chalcogenides, less toxic alternatives such
as SnTe have been far less explored. Previous synthetic work on SnTe
NCs have characterized photophysical properties of the nanoparticles.
This study focuses on understanding the fundamental chemical mechanisms
involved in SnTe NC formation, with the aim to improve synthetic outcomes.
The solvent oleylamine, common to all SnTe syntheses, is found to
form a highly reactive, heteroleptic Sn-oleylamine precursor that
is the primary molecular Sn species initiating NC formation and growth.
Further, the capping ligand oleic acid (OA) reacts with this amine
to produce tin oxide (SnOx), facilitating
the formation of an NC SnOx shell. Therefore,
the use of OA during synthesis is counterproductive to the formation
of stoichiometric SnTe nanoparticles. The knowledge of chemical reaction
mechanisms creates a foundation for the production of high-quality,
unoxidized, and stoichiometric SnTe NCs.
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Affiliation(s)
- Sean W. O’Neill
- Materials Science Program, University of Rochester, 4011 Wegmans Hall, Rochester, New York 14627, United States
| | - Todd D. Krauss
- Materials Science Program, University of Rochester, 4011 Wegmans Hall, Rochester, New York 14627, United States
- Department of Chemistry, University of Rochester, 404 Hutchison Hall, Rochester, New York 14627, United States
- Institute of Optics, University of Rochester, 480 Intercampus Drive, Rochester, New York 14627, United States
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8
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Keating L, Shim M. Mechanism of morphology variations in colloidal CuGaS 2 nanorods. NANOSCALE ADVANCES 2021; 3:5322-5331. [PMID: 36132637 PMCID: PMC9419053 DOI: 10.1039/d1na00434d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Accepted: 08/03/2021] [Indexed: 06/16/2023]
Abstract
Cu2-x S nanocrystals can serve as templates and intermediates in the synthesis of a wide range of nanocrystals through seeded growth, cation exchange, and/or catalytic growth. This versatility can facilitate and accelerate the search for environmentally benign nanocrystals of high performance with variable shapes, sizes, and composition. However, expanding the compositional space via Cu2-x S nanocrystals while achieving necessary uniformity requires an improved understanding of the growth mechanisms. Herein we address several unusual and previously unexplained aspects of the growth of CuGaS2 nanorods from Cu2-x S seeds as an example. In particular, we address the origin of the diverse morphologies which manifest from a relatively homogeneous starting mixture. We find that CuGaS2 nanorods start as Cu2-x S/CuGaS2 Janus particles, the majority of which have a {101̄2}/{101̄2} interface that helps to minimize lattice strain. We propose a mechanism that involves concurrent seed growth and cation exchange (CSC), where epitaxial growth of the Cu2-x S seed, rather than the anticipated catalytic or seeded growth of CuGaS2, occurs along with cation exchange that converts growing Cu2-x S to CuGaS2. This mechanism can explain the incorporation of the large number of anions needed to account for the order-of-magnitude volume increase upon CuGaS2 rod growth (which cannot be accounted for by the commonly assumed catalytic growth mechanism) and variations in morphology, including the pervasive tapering and growth direction change. Insights from the CSC growth mechanism also help to explain a previously puzzling phenomenon of regioselective nucleation of CuInSe2 on kinked CuGaS2 nanorods.
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Affiliation(s)
- Logan Keating
- Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois Urbana Illinois 61801 USA
| | - Moonsub Shim
- Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois Urbana Illinois 61801 USA
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9
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Chen M, Lu L, Yu H, Li C, Zhao N. Integration of Colloidal Quantum Dots with Photonic Structures for Optoelectronic and Optical Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2101560. [PMID: 34319002 PMCID: PMC8456226 DOI: 10.1002/advs.202101560] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2021] [Revised: 05/23/2021] [Indexed: 05/05/2023]
Abstract
Colloidal quantum dot (QD), a solution-processable nanoscale optoelectronic building block with well-controlled light absorption and emission properties, has emerged as a promising material system capable of interacting with various photonic structures. Integrated QD/photonic structures have been successfully realized in many optical and optoelectronic devices, enabling enhanced performance and/or new functionalities. In this review, the recent advances in this research area are summarized. In particular, the use of four typical photonic structures, namely, diffraction gratings, resonance cavities, plasmonic structures, and photonic crystals, in modulating the light absorption (e.g., for solar cells and photodetectors) or light emission (e.g., for color converters, lasers, and light emitting diodes) properties of QD-based devices is discussed. A brief overview of QD-based passive devices for on-chip photonic circuit integration is also presented to provide a holistic view on future opportunities for QD/photonic structure-integrated optoelectronic systems.
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Affiliation(s)
- Mengyu Chen
- School of Electronic Science and EngineeringXiamen UniversityXiamen361005P. R. China
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew TerritoriesHong Kong SARChina
| | - Lihua Lu
- School of Electronic Science and EngineeringXiamen UniversityXiamen361005P. R. China
| | - Hui Yu
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew TerritoriesHong Kong SARChina
| | - Cheng Li
- School of Electronic Science and EngineeringXiamen UniversityXiamen361005P. R. China
- Future DisplayInstitute of XiamenXiamen361005P. R. China
| | - Ni Zhao
- Department of Electronic EngineeringThe Chinese University of Hong KongShatinNew TerritoriesHong Kong SARChina
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10
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García de Arquer FP, Talapin DV, Klimov VI, Arakawa Y, Bayer M, Sargent EH. Semiconductor quantum dots: Technological progress and future challenges. Science 2021; 373:373/6555/eaaz8541. [PMID: 34353926 DOI: 10.1126/science.aaz8541] [Citation(s) in RCA: 337] [Impact Index Per Article: 112.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
In quantum-confined semiconductor nanostructures, electrons exhibit distinctive behavior compared with that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical, and optical properties. Zero-dimensional semiconductor quantum dots (QDs) offer strong light absorption and bright narrowband emission across the visible and infrared wavelengths and have been engineered to exhibit optical gain and lasing. These properties are of interest for imaging, solar energy harvesting, displays, and communications. Here, we offer an overview of advances in the synthesis and understanding of QD nanomaterials, with a focus on colloidal QDs, and discuss their prospects in technologies such as displays and lighting, lasers, sensing, electronics, solar energy conversion, photocatalysis, and quantum information.
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Affiliation(s)
- F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.,ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Barcelona 08860, Spain
| | - Dmitri V Talapin
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Victor I Klimov
- Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | | | - Manfred Bayer
- Technische Universitat Dortmund, 44221 Dortmund, Germany
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.
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11
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Dynamic lattice distortions driven by surface trapping in semiconductor nanocrystals. Nat Commun 2021; 12:1860. [PMID: 33767138 PMCID: PMC7994579 DOI: 10.1038/s41467-021-22116-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Accepted: 02/04/2021] [Indexed: 01/18/2023] Open
Abstract
Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in such materials are not understood. Here, femtosecond electron diffraction measurements corroborated by atomistic simulations uncover transient lattice deformations accompanying radiationless electronic processes in colloidal semiconductor nanocrystals. Investigation of the excitation energy dependence in a core/shell system shows that hot carriers created by a photon energy considerably larger than the bandgap induce structural distortions at nanocrystal surfaces on few picosecond timescales associated with the localization of trapped holes. On the other hand, carriers created by a photon energy close to the bandgap of the core in the same system result in transient lattice heating that occurs on a much longer 200 picosecond timescale, dominated by an Auger heating mechanism. Elucidation of the structural deformations associated with the surface trapping of hot holes provides atomic-scale insights into the mechanisms deteriorating optoelectronic performance and a pathway towards minimizing these losses in nanocrystal devices. Charge trapping can lead to severe nonradiative losses in colloidal semiconductor nanocrystals (NCs). The authors report femtosecond electron diffraction measurements on photoexcited NCs to reveal atomic-scale insights into how localization of charges at trap sites induce surface deformations.
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12
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Bera R, Kim G, Choi D, Kim J, Jeong KS. Beyond the Bandgap Photoluminescence of Colloidal Semiconductor Nanocrystals. J Phys Chem Lett 2021; 12:2562-2569. [PMID: 33684285 DOI: 10.1021/acs.jpclett.1c00142] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Intraband transitions of colloidal semiconductor nanocrystals, or the electronic transitions occurring in either the conduction band or valence band, have recently received considerable attention because utilizing the intraband transitions provides new approaches for applications such as photodetectors, imaging, solar cells, lasers, and so on. In the past few years, it has been revealed that observing the intraband transition is not limited for temporal measurement such as ultrafast spectroscopy but available for steady-state measurement even under ambient conditions with the help of self-doped semiconductor nanocrystals. Considering the large absorption coefficient of the steady-state intraband transition comparable to that of the bandgap transition, the use of the intraband transition will be promising for both fundamental and application studies. Here, we summarize the recent progress in studies on intraband photoluminescence of self-doped semiconductor nanocrystals and discuss key questions to be addressed in future research.
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Affiliation(s)
- Rajesh Bera
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Korea University, Seoul 02841, Republic of Korea
| | - Gahyeon Kim
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
| | - Dongsun Choi
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Korea University, Seoul 02841, Republic of Korea
| | - Jihye Kim
- Division of General Chemistry, School of Liberal Arts Education, University of Seoul, Seoul 02504, Republic of Korea
| | - Kwang Seob Jeong
- Department of Chemistry, Korea University, Seoul 02841, Republic of Korea
- Center for Molecular Spectroscopy and Dynamics, Institute for Basic Science (IBS), Korea University, Seoul 02841, Republic of Korea
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13
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Gréboval C, Chu A, Goubet N, Livache C, Ithurria S, Lhuillier E. Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration. Chem Rev 2021; 121:3627-3700. [DOI: 10.1021/acs.chemrev.0c01120] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Charlie Gréboval
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Audrey Chu
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Nicolas Goubet
- CNRS, Laboratoire de la Molécule aux Nano-objets; Réactivité, Interactions et Spectroscopies, MONARIS, Sorbonne Université, 4 Place Jussieu, Case Courier 840, F-75005 Paris, France
| | - Clément Livache
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, INSP, Sorbonne Université, F-75005 Paris, France
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14
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Dortaj H, Dolatyari M, Zarghami A, Alidoust F, Rostami A, Matloub S, Yadipour R. High-speed and high-precision PbSe/PbI 2 solution process mid-infrared camera. Sci Rep 2021; 11:1533. [PMID: 33452367 PMCID: PMC7810890 DOI: 10.1038/s41598-020-80847-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Accepted: 12/17/2020] [Indexed: 01/29/2023] Open
Abstract
Infrared (IR) cameras based on semiconductors grown by epitaxial methods face two main challenges, which are cost and operating at room temperature. The alternative new technologies which can tackle these two difficulties develop new and facile material and methods. Moreover, the implementation of high speed camera, which makes high resolution images with normal methods, is very expensive. In this paper, a new nanostructure based on a cost-effective solution processed technology for the implementation of the high-speed mid-infrared light camera at room temperature is proposed. To this end, the chemically synthesized PbSe-PbI2 core-shell Quantum Dots (QDs) are used. In this work, a camera including 10 × 10 pixels is fabricated and synthesized QDs spin-coated on interdigitated contact (IDC) and then the fabricated system passivated by epoxy resin. Finally, using an electronic reading circuit, all pixels are converted to an image on the monitor. To model the fabricated camera, we solved Schrodinger-Poisson equations self consistently. Then output current from each pixel is modeled based on semiconductor physics and dark and photocurrent, as well as Responsivity and Detectivity, are calculated. Then the fabricated device is examined, and dark and photocurrents are measured and compared to the theoretical results. The obtained results indicate that the obtained theoretical and measured experimental results are in good agreement together. The fabricated detector is high speed with a rise time of 100 ns. With this speed, we can get 10 million frames per second; this means we can get very high-resolution images. The speed of operation is examined experimentally using a chopper that modulates input light with 50, 100, 250, and 500 Hz. It is shown that the fabricated device operates well in these situations, and it is not limited by the speed of detector. Finally, for the demonstration of the proposed device operation, some pictures and movies taken by the camera are attached and inserted in the paper.
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Affiliation(s)
- Hannaneh Dortaj
- Photonics and Nanocrystals Research Lab (PNRL), University of Tabriz, 5166614761, Tabriz, Iran
| | - Mahboubeh Dolatyari
- SP-EPT Lab., ASEPE Company, Industrial Park of Advanced Technologies, 5364196795, Tabriz, Iran
| | - Armin Zarghami
- Photonics and Nanocrystals Research Lab (PNRL), University of Tabriz, 5166614761, Tabriz, Iran
| | - Farid Alidoust
- Photonics and Nanocrystals Research Lab (PNRL), University of Tabriz, 5166614761, Tabriz, Iran
| | - Ali Rostami
- Photonics and Nanocrystals Research Lab (PNRL), University of Tabriz, 5166614761, Tabriz, Iran.
- SP-EPT Lab., ASEPE Company, Industrial Park of Advanced Technologies, 5364196795, Tabriz, Iran.
| | - Samiye Matloub
- Quantum Photonics Research Lab (QPRL), University of Tabriz, 5166614761, Tabriz, Iran
| | - Reza Yadipour
- Faculty of Electrical and Computer Engineering, University of Tabriz, 5166614761, Tabriz, Iran
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15
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Abstract
The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.
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16
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Integrated Photodetectors Based on Group IV and Colloidal Semiconductors: Current State of Affairs. MICROMACHINES 2020; 11:mi11090842. [PMID: 32911711 PMCID: PMC7569792 DOI: 10.3390/mi11090842] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/10/2020] [Revised: 09/03/2020] [Accepted: 09/05/2020] [Indexed: 11/16/2022]
Abstract
With the aim to take advantage from the existing technologies in microelectronics, photodetectors should be realized with materials compatible with them ensuring, at the same time, good performance. Although great efforts are made to search for new materials that can enhance performance, photodetector (PD) based on them results often expensive and difficult to integrate with standard technologies for microelectronics. For this reason, the group IV semiconductors, which are currently the main materials for electronic and optoelectronic devices fabrication, are here reviewed for their applications in light sensing. Moreover, as new materials compatible with existing manufacturing technologies, PD based on colloidal semiconductor are revised. This work is particularly focused on developments in this area over the past 5-10 years, thus drawing a line for future research.
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17
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Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors. Sci Rep 2020; 10:12475. [PMID: 32719367 PMCID: PMC7385648 DOI: 10.1038/s41598-020-69302-6] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Accepted: 06/22/2020] [Indexed: 01/25/2023] Open
Abstract
A graphene-PbS quantum dot (QD) composite for application in high-performance near-infrared (NIR) photodetectors (PDs) is proposed in this study. A single-layer graphene flake and oleic acid-capped PbS QD composite is fabricated through the conventional sonication process, in hexane solution. Field emission scanning electron microscopy images of the graphene-PbS QD composite dispersed on a glass substrate confirm that the composite contains both aggregated graphene flakes and single-layer graphene with wrinkles; Transmission electron microscopy images reveal close packing with uniform size. The increased absorbance and quenched photoluminescence intensity of the graphene-PbS QD composite supports enhanced photoinduced charge transfer between graphene and the PbS QDs. Moreover, the specific Raman mode of the PbS QDs, embedded in the spectrum, is enhanced by combination with graphene, which can be interpreted by SERS as relevant to the photoinduced charge transfer between the Pbs QDs and graphene. For device application, a PD structure comprised by graphene-PbS QDs is fabricated. The photocurrent of the PD is measured using a conventional probe station with a 980-nm NIR laser diode. In the fabricated PD comprising graphene-PbS QDs, five-times higher photocurrent, 22% faster rise time, and 47% faster decay time are observed, compared to that comprising PbS QDs alone. This establishes the potential of the graphene-PbS QD composite for application in ultrathin, flexible, high-performance NIR PDs.
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18
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Dong Y, Chen M, Yiu WK, Zhu Q, Zhou G, Kershaw SV, Ke N, Wong CP, Rogach AL, Zhao N. Solution Processed Hybrid Polymer: HgTe Quantum Dot Phototransistor with High Sensitivity and Fast Infrared Response up to 2400 nm at Room Temperature. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2000068. [PMID: 32596115 PMCID: PMC7312319 DOI: 10.1002/advs.202000068] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2020] [Revised: 04/04/2020] [Indexed: 05/19/2023]
Abstract
Narrow bandgap semiconductor-based photodetectors often suffer from high room-temperature noise and are therefore operated at low temperatures. Here, a hybrid poly(3-hexylthiophene) (P3HT): HgTe quantum dot (QD) phototransistor is reported, which exhibits high sensitivity and fast photodetection up to 2400 nm wavelength range at room temperature. The active layer of the phototransistor consists of HgTe QDs well dispersed in a P3HT matrix. Fourier-transform infrared spectra confirm that chemical grafting between P3HT and HgTe QDs is realized after undergoing prolonged coblend stirring and a ligand exchange process. Thanks to the shifting of the charge transport into the P3HT and the partial passivation of the surface traps of HgTe QDs in the blend, the P3HT: HgTe QD hybrid phototransistor shows significantly improved gate-voltage tuning, 15 times faster response, and ≈80% reduction in the noise level compared to a pristine HgTe QD control device. More than 1011 Jones specific detectivity (estimated from the noise spectral density measured at 1 kHz) is achieved at room temperature, and the response time (measured at 22 mW cm-2 illumination intensity) of the device is less than 1.5 µs. That is comparable to commercial epitaxially grown IR photodetectors operated in the same wavelength range.
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Affiliation(s)
- Yifan Dong
- Engineering Research Center of Nano‐Geomaterials of Ministry of EducationFaculty of Materials Science and ChemistryChina University of GeosciencesWuhan430074China
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Mengyu Chen
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Wai Kin Yiu
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Qiang Zhu
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Guodong Zhou
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Stephen V. Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Ning Ke
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
| | - Ching Ping Wong
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
- School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
| | - Andrey L. Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP)City University of Hong KongKowloonHong Kong SAR999077China
| | - Ni Zhao
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New Territories, 999077Hong Kong SARChina
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19
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Sergeev AA, Pavlov DV, Kuchmizhak AA, Lapine MV, Yiu WK, Dong Y, Ke N, Juodkazis S, Zhao N, Kershaw SV, Rogach AL. Tailoring spontaneous infrared emission of HgTe quantum dots with laser-printed plasmonic arrays. LIGHT, SCIENCE & APPLICATIONS 2020; 9:16. [PMID: 32047625 PMCID: PMC7000696 DOI: 10.1038/s41377-020-0247-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2019] [Revised: 12/28/2019] [Accepted: 01/09/2020] [Indexed: 05/11/2023]
Abstract
Chemically synthesized near-infrared to mid-infrared (IR) colloidal quantum dots (QDs) offer a promising platform for the realization of devices including emitters, detectors, security, and sensor systems. However, at longer wavelengths, the quantum yield of such QDs decreases as the radiative emission rate drops following Fermi's golden rule, while non-radiative recombination channels compete with light emission. Control over the radiative and non-radiative channels of the IR-emitting QDs is crucially important to improve the performance of IR-range devices. Here, we demonstrate strong enhancement of the spontaneous emission rate of near- to mid-IR HgTe QDs coupled to periodically arranged plasmonic nanoantennas, in the form of nanobumps, produced on the surface of glass-supported Au films via ablation-free direct femtosecond laser printing. The enhancement is achieved by simultaneous radiative coupling of the emission that spectrally matches the first-order lattice resonance of the arrays, as well as more efficient photoluminescence excitation provided by coupling of the pump radiation to the local surface plasmon resonances of the isolated nanoantennas. Moreover, coupling of the HgTe QDs to the lattice plasmons reduces the influence of non-radiative decay losses mediated by the formation of polarons formed between QD surface-trapped carriers and the IR absorption bands of dodecanethiol used as a ligand on the QDs, allowing us to improve the shape of the emission spectrum through a reduction in the spectral dip related to this ligand coupling. Considering the ease of the chemical synthesis and processing of the HgTe QDs combined with the scalability of the direct laser fabrication of nanoantennas with tailored plasmonic responses, our results provide an important step towards the design of IR-range devices for various applications.
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Affiliation(s)
- A. A. Sergeev
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, 690041 Russia
| | - D. V. Pavlov
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, 690041 Russia
- Far Eastern Federal University, Vladivostok, 690090 Russia
| | - A. A. Kuchmizhak
- Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, 690041 Russia
- Far Eastern Federal University, Vladivostok, 690090 Russia
| | - M. V. Lapine
- University of Technology Sydney, NSW 2007 Sydney, Australia
| | - W. K. Yiu
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR China
| | - Y. Dong
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Material Science and Chemistry, China University of Geosciences, Wuhan, 430074 China
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR China
| | - N. Ke
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR China
| | - S. Juodkazis
- Swinburne University of Technology, John St., Hawthorn, VIC 3122 Australia
- Melbourne Centre for Nanofabrication, ANFF, 151 Wellington Road, Clayton, VIC 3168 Australia
| | - N. Zhao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong SAR China
| | - S. V. Kershaw
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR China
| | - A. L. Rogach
- Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR China
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20
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Chu A, Martinez B, Ferré S, Noguier V, Gréboval C, Livache C, Qu J, Prado Y, Casaretto N, Goubet N, Cruguel H, Dudy L, Silly MG, Vincent G, Lhuillier E. HgTe Nanocrystals for SWIR Detection and Their Integration up to the Focal Plane Array. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33116-33123. [PMID: 31426628 DOI: 10.1021/acsami.9b09954] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Infrared applications remain too often a niche market due to their prohibitive cost. Nanocrystals offer an interesting alternative to reach cost disruption especially in the short-wave infrared (SWIR, λ < 1.7 μm) where material maturity is now high. Two families of materials are candidate for SWIR photoconduction: lead and mercury chalcogenides. Lead sulfide typically benefits from all the development made for a wider band gap such as the one made for solar cells, while HgTe takes advantage of the development relative to mid-wave infrared detectors. Here, we make a fair comparison of the two material detection properties in the SWIR and discuss the material stability. At such wavelengths, studies have been mostly focused on PbS rather than on HgTe, therefore we focus in the last part of the discussion on the effect of surface chemistry on the electronic spectrum of HgTe nanocrystals. We unveil that tuning the capping ligands is a viable strategy to adjust the material from the p-type to ambipolar. Finally, HgTe nanocrystals are integrated into multipixel devices to quantize spatial homogeneity and onto read-out circuits to obtain a fast and sensitive infrared laser beam profile.
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Affiliation(s)
- Audrey Chu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Bertille Martinez
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Simon Ferré
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Vincent Noguier
- New Imaging Technologies SA , 1 impasse de la Noisette 91370 Verrières le Buisson , France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI Paris PSL Research University, Sorbonne Université Univ Paris 06, CNRS , 10 rue Vauquelin 75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Casaretto
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Sorbonne Université, CNRS, De la Molécule aux Nano-objets: Réactivité, Interactions et Spectroscopies, MONARIS , F-75005 Paris , France
| | - Hervé Cruguel
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Lenart Dudy
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Mathieu G Silly
- Synchrotron-SOLEIL , Saint-Aubin, BP48 , F91192 Gif sur Yvette Cedex , France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab , Chemin de la Hunière, BP 80100 , F-91123 Palaiseau , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
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21
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Guyot-Sionnest P, Ackerman MM, Tang X. Colloidal quantum dots for infrared detection beyond silicon. J Chem Phys 2019. [DOI: 10.1063/1.5115501] [Citation(s) in RCA: 43] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Affiliation(s)
- Philippe Guyot-Sionnest
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Matthew M. Ackerman
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
| | - Xin Tang
- James Franck Institute, The University of Chicago, 929E. 57th Street, Chicago, Illinois 60637, USA
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22
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Gréboval C, Noumbe U, Goubet N, Livache C, Ramade J, Qu J, Chu A, Martinez B, Prado Y, Ithurria S, Ouerghi A, Aubin H, Dayen JF, Lhuillier E. Field-Effect Transistor and Photo-Transistor of Narrow-Band-Gap Nanocrystal Arrays Using Ionic Glasses. NANO LETTERS 2019; 19:3981-3986. [PMID: 31059646 DOI: 10.1021/acs.nanolett.9b01305] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The gating of nanocrystal films is currently driven by two approaches: either the use of a dielectric such as SiO2 or the use of electrolyte. SiO2 allows fast bias sweeping over a broad range of temperatures but requires a large operating bias. Electrolytes, thanks to large capacitances, lead to the significant reduction of operating bias but are limited to slow and quasi-room-temperature operation. None of these operating conditions are optimal for narrow-band-gap nanocrystal-based phototransistors, for which the necessary large-capacitance gate has to be combined with low-temperature operation. Here, we explore the use of a LaF3 ionic glass as a high-capacitance gating alternative. We demonstrate for the first time the use of such ionic glasses to gate thin films made of HgTe and PbS nanocrystals. This gating strategy allows operation in the 180 to 300 K range of temperatures with capacitance as high as 1 μF·cm-2. We unveil the unique property of ionic glass gate to enable the unprecedented tunability of both magnitude and dynamics of the photocurrent thanks to high charge-doping capability within an operating temperature window relevant for infrared photodetection. We demonstrate that by carefully choosing the operating gate bias, the signal-to-noise ratio can be improved by a factor of 100 and the time response accelerated by a factor of 6. Moreover, the good transparency of LaF3 substrate allows back-side illumination in the infrared range, which is highly valuable for the design of phototransistors.
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Affiliation(s)
- Charlie Gréboval
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Ulrich Noumbe
- Université de Strasbourg, CNRS , Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 , F-67000 Strasbourg , France
| | - Nicolas Goubet
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Clément Livache
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Julien Ramade
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Junling Qu
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Audrey Chu
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Bertille Martinez
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Yoann Prado
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Étude des Matériaux , ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213 , 10 rue Vauquelin , 75005 Paris , France
| | - Abdelkarim Ouerghi
- Centre de Nanosciences et de Nanotechnologies, CNRS , Univ. Paris-Sud, Université Paris-Saclay, C2N-Palaiseau , 91120 Palaiseau , France
| | - Herve Aubin
- Centre de Nanosciences et de Nanotechnologies, CNRS , Univ. Paris-Sud, Université Paris-Saclay, C2N-Palaiseau , 91120 Palaiseau , France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS , Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504 , F-67000 Strasbourg , France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS , Institut des NanoSciences de Paris, INSP , F-75005 Paris , France
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23
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A colloidal quantum dot infrared photodetector and its use for intraband detection. Nat Commun 2019; 10:2125. [PMID: 31073132 PMCID: PMC6509134 DOI: 10.1038/s41467-019-10170-8] [Citation(s) in RCA: 78] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2019] [Accepted: 04/18/2019] [Indexed: 11/09/2022] Open
Abstract
Wavefunction engineering using intraband transition is the most versatile strategy for the design of infrared devices. To date, this strategy is nevertheless limited to epitaxially grown semiconductors, which lead to prohibitive costs for many applications. Meanwhile, colloidal nanocrystals have gained a high level of maturity from a material perspective and now achieve a broad spectral tunability. Here, we demonstrate that the energy landscape of quantum well and quantum dot infrared photodetectors can be mimicked from a mixture of mercury selenide and mercury telluride nanocrystals. This metamaterial combines intraband absorption with enhanced transport properties (i.e. low dark current, fast time response and large thermal activation energy). We also integrate this material into a photodiode with the highest infrared detection performances reported for an intraband-based nanocrystal device. This work demonstrates that the concept of wavefunction engineering at the device scale can now be applied for the design of complex colloidal nanocrystal-based devices. The field of wavefunction engineering using intraband transition to design infrared devices has been limited to epitaxially grown semiconductors. Here the authors demonstrate that a device with similar energy landscape can be obtained from a mixture of colloidal quantum dots made of HgTe and HgSe.
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