Predicted Siliconoids by Bridging Si9 Clusters through sp3-Si Linkers

Endohedral group-14-element clusters TM@E9 (TM = Co, Ni, Cu; E = Ge, Sn, Pb) and their low-dimensional nanostructures: a first-principles study

Endohedral group14-based clusters with the encapsulation of a transition metal, which are termed [TM@E_m]^n- (TM = transition metal and E = group-14 elements), have lots of potential applications and have been used as interesting building blocks in materials science. Nevertheless, their electronic structures and stability mechanism remain unclear. In this paper, we systematically study the geometries, electronic structures, and bonding properties of [TM@E₉]^n- clusters which are the smallest endohedral group-14-based clusters synthesized so far, by using density functional theory (DFT) calculations. The calculation results reveal the important role of TMs in affecting the structures and bonding interactions in the [TM@E₉]^n- cluster. In the presence of a TM, the cluster geometry could change from a monocapped square antiprism (C_4v) for empty [E₉]^4- cages to a tricapped trigonal prismatic geometry (D_3h) for [TM@E₉]^n-. By using the energy decomposition analysis (EDA) method, the bonding properties between the endohedral TM and E₉ cluster have been thoroughly investigated. It was found that the origin of stability of these clusters is from the large electrostatic attraction with significantly reduced Pauli repulsion. In the case of orbital interactions, the π back-donations from d orbitals of the TM to the cluster make important contributions. More interestingly, the 1D-chain and 2D-sheet nanostructures based on the [Ni@E₉] cluster have been theoretically predicted. The band structure and density of states analysis revealed that all of these nanostructures are metallic and their excellent thermodynamic stability has been confirmed by using ab initio molecular dynamics (AIMD) simulations.

Silicon clusters with six and seven unsubstituted vertices via a two-step reaction from elemental silicon

Unsaturated silicon clusters with only partial substitution, and thus, "naked" Si atoms are well studied species as they are proposed intermediates in gas-phase deposition processes. Although a remarkable number of stable molecular clusters has been reported, they are typically still obtained by multi-step syntheses. Herein we introduce a newly developed synthetic approach which led to the formation of the anionic species {Si(TMS)3}3Si9 - (1a) and {Si(TMS)3}2Si9 2- (1b), and an extension of this synthetic protocol resulted in the first covalent attachment of ligands through metal atoms to these clusters, (SnCy3)3Si9 - (2a) and (SnCy3)2Si9 2- (2b). The influence of the substituents on the electron localization in the central Si9 unit is analyzed by means of intrinsic bond orbital (IBO) analysis and partial atomic charge distribution. The IBO analyses reveal a new type of delocalization including 5-center-6-electron besides 3-center-2-electron bonds. The Raman spectra of 1b and 2b allow an assignment of the Si-Si intra-cluster vibrations by comparison to calculated (DFT-PBE0) spectra. The anions are formed in a one-step synthesis from binary K12Si17 which can easily be obtained by fusing the elements K and Si. The anions are characterized by ESI mass spectrometry and comprehensive NMR studies (1H, 13C, 29Si, 119Sn). Attempts to crystallize 1a and 2a as their (K-222crypt)+ salts yielded after the loss of one of the substituents single crystals containing 1b and 2b. The single crystal X-ray structure analyses reveal the presence of anionic siliconoids with surfaces of seven unsubstituted silicon atoms.

Coordination Chemistry of Silicon

It is with great pleasure to welcome readers to this Special Issue of Inorganics, devoted to “Coordination Chemistry of Silicon” [...]

Zinc as a versatile connecting atom for zintl cluster oligomers

Homoatomic cluster aggregation is a versatile route to build up atom-precise nano structures. In this work, we present first structures representing building motifs of hypothetical ZnGe₉ networks.

Anionic Siliconoids from Zintl Phases: R3 Si9 - with Six and R2 Si9 2- with Seven Unsubstituted Exposed Silicon Cluster Atoms (R=Si(tBu)2 H)

Neutral and anionic silicon clusters (siliconoids) are regarded as important model systems for bulk silicon surfaces. For 25 years their formation from binary alkali metal silicide phases has been proposed, but experimentally never realized. Herein the silylation of a silicide, leading to the anionic siliconoids (Si(tBu)₂ H)₃ Si₉ ^- (1 a) and (Si(tBu)₂ H)₂ Si₉ ^2- (2 a) with the highest known number of ligand-free silicon atoms is reported for the first time. The new anions are obtained in a one-step reaction of K₁₂ Si₁₇ /NH₃ (liq.) and Si(tBu)₂ HCl/THF. Electrospray ionization spectrometry and ¹ H, ¹³ C, ²⁹ Si, as well as ²⁹ Si-HMBC (heteronuclear multiple bond correlation) NMR spectroscopy, confirm the attachment of three silyl groups at a [Si₉ ]^4- cluster under formation of 1 a, in accordance with calculated NMR shifts. During crystal growth the siliconoid di-anion 2 a is formed. The single-crystal X-ray structure determination reveals that two silyl groups are connected to the deltahedral Si₉ cluster core, revealing seven unsubstituted exposed silicon cluster atoms with a hemispheroidal coordination. The negative charges -1 and -2 are delocalized over the six and seven siliconoid Si atoms in 1 a and 2 a, respectively.