1
|
Zhang Q, Xia G, Li H, Sun Q, Gong H, Wang S. Solution-processed bilayer InGaZnO/In 2O 3thin film transistors at low temperature by lightwave annealing. NANOTECHNOLOGY 2024; 35:125202. [PMID: 38086071 DOI: 10.1088/1361-6528/ad14b5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Accepted: 12/12/2023] [Indexed: 01/05/2024]
Abstract
At low temperatures about 230 °C, bilayer InGaZnO/In2O3thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In2O3bilayer TFTs with SiO2as dielectric layer show high electrical performances, such as a mobility of 7.63 cm2V-1s-1, a threshold voltage (Vth) of 3.8 V, and an on/off ratio higher than 107, which are superior to single-layer InGaZnO TFTs or In2O3TFTs. Moreover, bilayer InGaZnO/In2O3TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In2O3layer. By using high dielectric constant AlOxfilm, the InGaZnO/In2O3TFTs exhibit an improved mobility of 47.7 cm2V-1s-1. The excellent electrical performance of the solution-based InGaZnO/In2O3TFTs shows great application potential for low-cost flexible printed electronics.
Collapse
Affiliation(s)
- Qian Zhang
- School of Information Engineering, Hebei GEO University, Shijiazhuang 050031, People's Republic of China
| | - Guodong Xia
- Department of Material and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, People's Republic of China
| | - Hangyu Li
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Qiang Sun
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Hongyu Gong
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| | - Sumei Wang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Jinan 250061, People's Republic of China
| |
Collapse
|
2
|
Diao Y, Zhang Y, Li Y, Jiang J. Metal-Oxide Heterojunction: From Material Process to Neuromorphic Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:9779. [PMID: 38139625 PMCID: PMC10747618 DOI: 10.3390/s23249779] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2023] [Revised: 11/30/2023] [Accepted: 12/05/2023] [Indexed: 12/24/2023]
Abstract
As technologies like the Internet, artificial intelligence, and big data evolve at a rapid pace, computer architecture is transitioning from compute-intensive to memory-intensive. However, traditional von Neumann architectures encounter bottlenecks in addressing modern computational challenges. The emulation of the behaviors of a synapse at the device level by ionic/electronic devices has shown promising potential in future neural-inspired and compact artificial intelligence systems. To address these issues, this review thoroughly investigates the recent progress in metal-oxide heterostructures for neuromorphic applications. These heterostructures not only offer low power consumption and high stability but also possess optimized electrical characteristics via interface engineering. The paper first outlines various synthesis methods for metal oxides and then summarizes the neuromorphic devices using these materials and their heterostructures. More importantly, we review the emerging multifunctional applications, including neuromorphic vision, touch, and pain systems. Finally, we summarize the future prospects of neuromorphic devices with metal-oxide heterostructures and list the current challenges while offering potential solutions. This review provides insights into the design and construction of metal-oxide devices and their applications for neuromorphic systems.
Collapse
Affiliation(s)
| | | | | | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
| |
Collapse
|
3
|
Pan W, Zhang G, Liu X, Song K, Ning L, Li S, Chen L, Zhang X, Huang T, Yang H, Zhou X, Zhang S, Lu L. Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy. MICROMACHINES 2023; 14:2144. [PMID: 38138313 PMCID: PMC10745073 DOI: 10.3390/mi14122144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 11/20/2023] [Accepted: 11/22/2023] [Indexed: 12/24/2023]
Abstract
The zinc-tin-oxide (ZTO) thin-film transistor (TFT) is one of the most promising candidates for advanced display applications, though its popularity is limited by its performances. In this work, a heterojunction channel strategy was adopted to regulate the electron transport behaviors and the TFT performances by manipulating the concentration and the distribution of oxygen vacancies, and a reasonable physical model was proposed based on experimental and simulation results. It is difficult to mediate the contradiction between mobility and threshold voltage for the single channel. Via a heterojunction channel strategy, desirable TFT performances, with mobility of 12.5 cm2/Vs, threshold voltage of 1.2 V and Ion/Ioff of 3 × 109, are achieved when the oxygen-vacancy-enriched layer gets close to the gate insulator (GI). The enhanced performances can be mainly attributed to the formation of two-dimensional electron gas (2DEG), the insensitive potential barrier and the reasonable distribution of oxygen vacancy. On the contrary, when the oxygen-vacancy-enriched layer stays away from GI, all the main performances degenerate due to the vulnerable potential well. The findings may facilitate the development and application of heterojunction channels for improving the performances of electronic devices.
Collapse
Affiliation(s)
- Wengao Pan
- Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China; (W.P.); (G.Z.); (X.L.); (K.S.)
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| | - Guoshang Zhang
- Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China; (W.P.); (G.Z.); (X.L.); (K.S.)
| | - Xinhua Liu
- Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China; (W.P.); (G.Z.); (X.L.); (K.S.)
| | - Kexing Song
- Henan Key Laboratory of Advanced Conductor Materials, Institute of Materials, Henan Academy of Sciences, Zhengzhou 450046, China; (W.P.); (G.Z.); (X.L.); (K.S.)
| | - Laiyuan Ning
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; (L.N.); (S.L.); (L.C.)
| | - Shuaifang Li
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; (L.N.); (S.L.); (L.C.)
| | - Lijia Chen
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; (L.N.); (S.L.); (L.C.)
| | - Xuefeng Zhang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, China; (L.N.); (S.L.); (L.C.)
| | - Tengyan Huang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| | - Huan Yang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| | - Xiaoliang Zhou
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| | - Shengdong Zhang
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| | - Lei Lu
- School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China; (T.H.); (H.Y.); (X.Z.); (S.Z.)
| |
Collapse
|
4
|
Ahn HM, Kwon YH, Seong NJ, Choi KJ, Hwang CS, Yang JH, Kim YH, Kim G, Yoon SM. Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration. NANOTECHNOLOGY 2023; 34:155301. [PMID: 36649644 DOI: 10.1088/1361-6528/acb3cc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Accepted: 01/16/2023] [Indexed: 06/17/2023]
Abstract
Vertical channel thin film transistors (VTFTs) have been expected to be exploited as one of the promising three-dimensional devices demanding a higher integration density owing to their structural advantages such as small device footprints. However, the VTFTs have suffered from the back-channel effects induced by the pattering process of vertical sidewalls, which critically deteriorate the device reliability. Therefore, to reduce the detrimental back-channel effects has been one of the most urgent issues for enhancing the device performance of VTFTs. Here we show a novel strategy to introduce an In-Ga-Zn-O (IGZO) bilayer channel configuration, which was prepared by atomic-layer deposition (ALD), in terms of structural and electrical passivation against the back-channel effects. Two-dimensional electron gas was effectively employed for improving the operational reliability of the VTFTs by inducing strong confinement of conduction electrons at heterojunction interfaces. The IGZO bilayer channel structure was composed of 3 nm-thick In-rich prompt (In/Ga = 4.1) and 12 nm-thick prime (In/Ga = 0.7) layers. The VTFTs using bilayer IGZO channel showed high on/off ratio (4.8 × 109), low SS value (180 mV dec-1), and high current drivability (13.6μAμm-1). Interestingly, the strategic employment of bilayer channel configurations has secured excellent device operational stability representing the immunity against the bias-dependent hysteretic drain current and the threshold voltage instability of the fabricated VTFTs. Moreover, the threshold voltage shifts of the VTFTs could be suppressed from +5.3 to +2.6 V under a gate bias stress of +3 MV cm-1for 104s at 60 °C, when the single layer channel was replaced with the bilayer channel. As a result, ALD IGZO bilayer configuration could be suggested as a useful strategy to improve the device characteristics and operational reliability of VTFTs.
Collapse
Affiliation(s)
- Hyun-Min Ahn
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Republic of Korea
| | | | | | | | - Chi-Sun Hwang
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Jong-Heon Yang
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Yong-Hae Kim
- ICT Creative Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea
| | - Gyungtae Kim
- National Nanofab Center, Daejeon 34141, Republic of Korea
| | - Sung-Min Yoon
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do 17104, Republic of Korea
| |
Collapse
|