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Rezk A, Ansari MHR, Ranjeesh KC, Gaber S, Kumar D, Merhi A, Kaafarani BR, Hassine MB, El-Atab N, Shetty D, Nayfeh A. Nano-scale charge trapping memory based on two-dimensional conjugated microporous polymer. Sci Rep 2023; 13:18845. [PMID: 37914717 PMCID: PMC10620224 DOI: 10.1038/s41598-023-44232-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Accepted: 10/05/2023] [Indexed: 11/03/2023] Open
Abstract
There is a growing interest in new semiconductor nanostructures for future high-density high-performance flexible electronic devices. Two-dimensional conjugated microporous polymers (2D-CMPs) are promising candidates because of their inherent optoelectronic properties. Here, we are reporting a novel donor-acceptor type 2D-CMP based on Pyrene and Isoindigo (PI) for a potential nano-scale charge-trapping memory application. We exfoliated the PI polymer into ~ 2.5 nm thick nanoparticles (NPs) and fabricated a Metal-Insulator-Semiconductor (MIS) device with PI-NPs embedded in the insulator. Conductive AFM (cAFM) is used to examine the confinement mechanism as well as the local charge injection process, where ultrathin high-κ alumina supplied the energy barrier for confining the charge carrier transport. We have achieved a reproducible on-and-off state and a wide memory window (ΔV) of 1.5 V at a relatively small reading current. The device displays a low operation voltage (V < 1 V), with good retention (104 s), and endurance (103 cycles). Furthermore, a theoretical analysis is developed to affirm the measured charge carriers' transport and entrapment mechanisms through and within the fabricated MIS structures. The PI-NPs act as a nanoscale floating gate in the MIS-based memory with deep trapping sites for the charged carriers. Moreover, our results demonstrate that the synthesized 2D-CMP can be promising for future low-power high-density memory applications.
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Affiliation(s)
- Ayman Rezk
- Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi, 127788, UAE
| | - Md Hasan Raza Ansari
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), 23955, Thuwal, Kingdom of Saudi Arabia
| | | | - Safa Gaber
- Department of Chemistry, Khalifa University, PO Box 127788, Abu Dhabi, UAE
| | - Dayanand Kumar
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), 23955, Thuwal, Kingdom of Saudi Arabia
| | - Areej Merhi
- Department of Chemistry, American University of Beirut, Beirut, 1107-2020, Lebanon
| | - Bilal R Kaafarani
- Department of Chemistry, American University of Beirut, Beirut, 1107-2020, Lebanon
| | - Mohamed Ben Hassine
- Electron Microscopy Core Labs, King Abdullah University of Science and Technology (KAUST), 23955, Thuwal, Kingdom of Saudi Arabia
| | - Nazek El-Atab
- Smart, Advanced Memory Devices and Applications (SAMA) Laboratory, Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), 23955, Thuwal, Kingdom of Saudi Arabia
| | - Dinesh Shetty
- Department of Chemistry, Khalifa University, PO Box 127788, Abu Dhabi, UAE.
- Advanced Materials Chemistry Center (AMCC), Khalifa University, PO Box 127788, Abu Dhabi, UAE.
| | - Ammar Nayfeh
- Department of Electrical Engineering and Computer Science, Khalifa University, Abu Dhabi, 127788, UAE.
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Properties of Al2O3 Thin Films Grown by PE-ALD at Low Temperature Using H2O and O2 Plasma Oxidants. COATINGS 2021. [DOI: 10.3390/coatings11101266] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Al2O3 layers with thicknesses in the 25–120 nm range were deposited by plasma enhanced atomic layer deposition at 70 °C. Trimethylaluminum was used as organometallic precursor, O2 and H2O as oxidant agents and Ar as a purge gas. The deposition cycle consisted of 50 ms TMA pulse/10 s purge time/6 s of plasma oxidation at 200 W/10 s purge time. The optical constants and thicknesses of the grown layers were determined by spectroscopic ellipsometry, while the roughness was measured by atomic force microscopy, giving RMS values in the 0.29–0.32 nm range for films deposited under different conditions and having different thicknesses. High transmittance, ~90%, was measured by UV–Vis spectroscopy. X-ray photoelectron spectroscopy revealed that, with both types of oxidants, the obtained films are close to stoichiometric composition and, with high purity, no carbon was detected. Electrical characterization showed good insulating properties of both types of films, though the H2O oxidant leads to better I-V characteristics.
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