1
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Amores AP, Swillo M. Heterogeneously integrated InGaP/Si waveguides for nonlinear photonics. OPTICS EXPRESS 2024; 32:16925-16934. [PMID: 38858888 DOI: 10.1364/oe.520643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2024] [Accepted: 03/14/2024] [Indexed: 06/12/2024]
Abstract
The heterogeneous integration of III-V semiconductors with the Silicon platform enables the merging of photon sources with Silicon electronics while allowing the use of Silicon mature processing techniques. However, the inherent sufficient quality of III-Vs' native oxides made imperative the use of deposited interfacial oxide layers or adhesives to permit the bonding. Here we present a novel approach enabling the heterogeneous integration of structured III-V semiconductors on silicates via molecular bonding at 150 °C, much below the CMOS degradation temperature, is presented. The transfer of 235 nm thick and 2 mm long InGaP waveguides with widths of 4.65, 2.6 and 1.22 μm on 4 μm thick Si thermal oxide, with optional SX AR-N 8200.18 cladding, has been experimentally verified. Post-processing of the 1.20 and 0.60 μm input/output tappers has allowed the implementation of double-inverse tapers. The minimal processing requirements and the compatibility with transferring non-cladded structures of the presented technique are demonstrated. The quality of the transferred waveguides bonding interface and their viability for non-linear optics applications has been tested by means of the surface contribution to the optical non-linearity via modal phase-matched second-harmonic generation.
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2
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Shekhar S, Bogaerts W, Chrostowski L, Bowers JE, Hochberg M, Soref R, Shastri BJ. Roadmapping the next generation of silicon photonics. Nat Commun 2024; 15:751. [PMID: 38272873 PMCID: PMC10811194 DOI: 10.1038/s41467-024-44750-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 01/03/2024] [Indexed: 01/27/2024] Open
Abstract
Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions-mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications-in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem.
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Affiliation(s)
- Sudip Shekhar
- Department of Electrical & Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, V6T1Z4, BC, Canada.
| | - Wim Bogaerts
- Department of Information Technology, Ghent University - IMEC, Technologiepark-Zwijnaarde 126, Ghent, 9052, Belgium
| | - Lukas Chrostowski
- Department of Electrical & Computer Engineering, University of British Columbia, 2332 Main Mall, Vancouver, V6T1Z4, BC, Canada
| | - John E Bowers
- Department of Electrical & Computer Engineering, University of California Santa Barbara, Santa Barbara, 93106, CA, USA
| | - Michael Hochberg
- Luminous Computing, 4750 Patrick Henry Drive, Santa Clara, 95054, CA, USA
| | - Richard Soref
- College of Science and Mathematics, University of Massachusetts Boston, 100 William T. Morrissey Blvd., Boston, 02125, MA, USA
| | - Bhavin J Shastri
- Department of Physics, Engineering Physics & Astronomy, Queen's University, 64 Bader Lane, Kingston, K7L3N6, ON, Canada.
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3
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Xu M, Chen X, Guo Y, Wang Y, Qiu D, Du X, Cui Y, Wang X, Xiong J. Reconfigurable Neuromorphic Computing: Materials, Devices, and Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301063. [PMID: 37285592 DOI: 10.1002/adma.202301063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 05/15/2023] [Indexed: 06/09/2023]
Abstract
Neuromorphic computing has been attracting ever-increasing attention due to superior energy efficiency, with great promise to promote the next wave of artificial general intelligence in the post-Moore era. Current approaches are, however, broadly designed for stationary and unitary assignments, thus encountering reluctant interconnections, power consumption, and data-intensive computing in that domain. Reconfigurable neuromorphic computing, an on-demand paradigm inspired by the inherent programmability of brain, can maximally reallocate finite resources to perform the proliferation of reproducibly brain-inspired functions, highlighting a disruptive framework for bridging the gap between different primitives. Although relevant research has flourished in diverse materials and devices with novel mechanisms and architectures, a precise overview remains blank and urgently desirable. Herein, the recent strides along this pursuit are systematically reviewed from material, device, and integration perspectives. At the material and device level, one comprehensively conclude the dominant mechanisms for reconfigurability, categorized into ion migration, carrier migration, phase transition, spintronics, and photonics. Integration-level developments for reconfigurable neuromorphic computing are also exhibited. Finally, a perspective on the future challenges for reconfigurable neuromorphic computing is discussed, definitely expanding its horizon for scientific communities.
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Affiliation(s)
- Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinrui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinchuan Du
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yi Cui
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
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4
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Minemura D, Kou R, Sutoh Y, Murai T, Yamada K, Shoji Y. Compact magneto-optical isolator by µ-transfer printing of magneto-optical single-crystal film on silicon waveguides. OPTICS EXPRESS 2023; 31:27821-27829. [PMID: 37710849 DOI: 10.1364/oe.497731] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Accepted: 07/24/2023] [Indexed: 09/16/2023]
Abstract
Optical isolators provide one-way propagation and are necessary to protect laser diodes from damage and unstable operation caused by reflected light. Although magneto-optical (MO) devices can operate as isolators, achieving high-density integration using conventional direct bonding methods is difficult because a large and thick growth substrate remains on the circuits. We experimentally demonstrated a compact Mach-Zehnder interferometer-based MO isolator with Si waveguides by the µ-transfer printing of a Ce:YIG/SGGG coupon. The isolator has a footprint of 0.25 mm2 with a Ce:YIG/SGGG coupon of 50 × 800 µm2 and ∼ 1-µm thickness and achieved a maximum isolation ratio of 14 dB in telecom bands.
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5
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Li J, Poon AW. A 3C-SiC-on-Insulator-Based Integrated Photonic Platform Using an Anodic Bonding Process with Glass Substrates. MICROMACHINES 2023; 14:399. [PMID: 36838099 PMCID: PMC9962413 DOI: 10.3390/mi14020399] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Revised: 02/02/2023] [Accepted: 02/04/2023] [Indexed: 06/18/2023]
Abstract
Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for optical confinement in the SiC layer, which makes it difficult to realize a SiC-based integrated photonic platform. In this paper, we demonstrate a 3C-SiC-on-insulator (3C-SiCoI)-based integrated photonic platform by transferring the epitaxial 3C-SiC layer from a silicon die to a borosilicate glass substrate using anodic bonding. By fine-tuning the fabrication process, we demonstrated nearly 100% area transferring die-to-wafer bonding. We fabricated waveguide-coupled microring resonators using sulfur hexafluoride (SF6)-based dry etching and demonstrated a moderate loaded quality (Q) factor of 1.4 × 105. We experimentally excluded the existence of the photorefractive effect in this platform at sub-milliwatt on-chip input optical power levels. This 3C-SiCoI platform is promising for applications, including large-scale integration of linear, nonlinear and quantum photonics.
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Affiliation(s)
| | - Andrew W. Poon
- Photonic Device Laboratory, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong
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6
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Shadmani A, Thomas RA, Liu Z, Papon C, Heck MJR, Volet N, Scholz S, Wieck AD, Ludwig A, Lodahl P, Midolo L. Integration of GaAs waveguides on a silicon substrate for quantum photonic circuits. OPTICS EXPRESS 2022; 30:37595-37602. [PMID: 36258345 DOI: 10.1364/oe.467920] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2022] [Accepted: 09/02/2022] [Indexed: 06/16/2023]
Abstract
We report a method for integrating GaAs waveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss <7 dB/mm, which is comparable with the performance of suspended GaAs circuits. These results enable the integration of quantum emitters with different material platforms, towards the realization of scalable quantum photonic integrated circuits.
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7
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Popov VP, Antonov VA, Miakonkikh AV, Rudenko KV. Ion Drift and Polarization in Thin SiO 2 and HfO 2 Layers Inserted in Silicon on Sapphire. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3394. [PMID: 36234528 PMCID: PMC9565775 DOI: 10.3390/nano12193394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/11/2022] [Revised: 09/16/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50-310 nm and HfO2 layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current-gate voltage curves and a field-induced switching of threshold voltage in the SOS pseudo-MOSFET. For the inserted SiO2 with a thickness of 310 nm, the transfer transistor characteristics measured in the temperature ranging from 25 to 300 °C demonstrated a triple increase in the hysteresis window with the increasing temperature. It was associated with the ion drift and the formation of electric dipoles at the silicon dioxide boundaries. A much slower increase in the window with temperature for the inserted HfO2 layer was explained by the dominant ferroelectric polarization switching in the inserted HfO2 layer. Thus, the experiments allowed for a separation of the effects of mobile ions and ferroelectric polarization on the observed transfer characteristics of hysteresis in structures of Si/HfO2/sapphire and Si/SiO2/sapphire.
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Affiliation(s)
- Vladimir P. Popov
- Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Avenu, 630090 Novosibirsk, Russia
| | - Valentin A. Antonov
- Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Avenu, 630090 Novosibirsk, Russia
| | - Andrey V. Miakonkikh
- Valiev Institute of Physics and Technology RAS, 36 Nakhimovsky Avenu, bld.1, 117218 Moscow, Russia
| | - Konstantin V. Rudenko
- Valiev Institute of Physics and Technology RAS, 36 Nakhimovsky Avenu, bld.1, 117218 Moscow, Russia
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8
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Zeng S, Zhao X, Zhu Y, Sweatt L, Zhu L. Watt-level beam combined diode laser systems in a chip-scale hybrid photonic platform. OPTICS EXPRESS 2022; 30:23815-23827. [PMID: 36225055 DOI: 10.1364/oe.461877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 05/27/2022] [Indexed: 06/16/2023]
Abstract
Scaling up the power of on-chip diode lasers is of great importance for many emerging applications, such as integrated nonlinear optics, remote sensing, free space communication, infrared countermeasure, and light detection and ranging (LIDAR). In this manuscript, we introduce and demonstrate photonic integrated circuits (PIC) based beam combining methods to create power scalable, integrated direct diode laser systems. Traditional laser beam combining, including coherent beam combining (CBC) and wavelength beam combining (WBC), usually requires free space or fiber optical components, leading to bulky and complex systems. Instead, PIC based beam combining methods can greatly reduce the cost, size, weight, and power consumption (CSWaP) of next generation direct diode laser systems. We experimentally demonstrate four channel chip-scale CBC and WBC with watt-level on-chip power by using III/V-Si3N4 hybrid integration. Our results show that PIC based beam combining is very suitable for power scaling in a chip-scale platform.
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9
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Vangelidis I, Bellas DV, Suckow S, Dabos G, Castilla S, Koppens FHL, Ferrari AC, Pleros N, Lidorikis E. Unbiased Plasmonic-Assisted Integrated Graphene Photodetectors. ACS PHOTONICS 2022; 9:1992-2007. [PMID: 35726242 PMCID: PMC9204831 DOI: 10.1021/acsphotonics.2c00100] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Indexed: 05/10/2023]
Abstract
Photonic integrated circuits (PICs) for next-generation optical communication interconnects and all-optical signal processing require efficient (∼A/W) and fast (≥25 Gbs-1) light detection at low (
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Affiliation(s)
- Ioannis Vangelidis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
| | - Dimitris V. Bellas
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Stephan Suckow
- AMO
GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Strasse 25, Aachen 52074, Germany
| | - George Dabos
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Sebastián Castilla
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
| | - Frank H. L. Koppens
- ICFO
- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Castelldefels, Barcelona 08860, Spain
- ICREA
- Institució Catalana de Recerca i Estudis Avançats, Barcelona 08010, Spain
| | - Andrea C. Ferrari
- Cambridge
Graphene Centre, University of Cambridge, Cambridge CB3 0FA, U.K.
| | - Nikos Pleros
- Department
of Informatics, Center for Interdisciplinary Research and Innovation, Aristotle University of Thessaloniki, Thessaloniki 57001, Greece
| | - Elefterios Lidorikis
- Department
of Materials Science and Engineering, University
of Ioannina, Ioannina 45110, Greece
- University
Research Center of Ioannina (URCI), Institute of Materials Science
and Computing, Ioannina 45110, Greece
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10
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Twayana K, Rebolledo-Salgado I, Deriushkina E, Schröder J, Karlsson M, Torres-Company V. Spectral Interferometry with Frequency Combs. MICROMACHINES 2022; 13:614. [PMID: 35457918 PMCID: PMC9026469 DOI: 10.3390/mi13040614] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 04/08/2022] [Accepted: 04/10/2022] [Indexed: 02/01/2023]
Abstract
In this review paper, we provide an overview of the state of the art in linear interferometric techniques using laser frequency comb sources. Diverse techniques including Fourier transform spectroscopy, linear spectral interferometry and swept-wavelength interferometry are covered in detail. The unique features brought by laser frequency comb sources are shown, and specific applications highlighted in molecular spectroscopy, optical coherence tomography and the characterization of photonic integrated devices and components. Finally, the possibilities enabled by advances in chip scale swept sources and frequency combs are discussed.
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Affiliation(s)
- Krishna Twayana
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
| | - Israel Rebolledo-Salgado
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
- Measurement Science and Technology, RISE Research Institutes of Sweden, SE-50115 Borås, Sweden
| | - Ekaterina Deriushkina
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
| | - Jochen Schröder
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
| | - Magnus Karlsson
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
| | - Victor Torres-Company
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg, Sweden; (K.T.); (I.R.-S.); (E.D.); (J.S.); (M.K.)
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11
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Okda HA, Rabia SI, Shalaby HMH. Performance enhancement of an ultrafast graphene photodetector via simultaneous two-mode absorption in a hybrid plasmonic waveguide. APPLIED OPTICS 2022; 61:3165-3173. [PMID: 35471294 DOI: 10.1364/ao.454607] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Accepted: 03/13/2022] [Indexed: 06/14/2023]
Abstract
An ultrafast, compact, zero-biased, and complementary metal-oxide semiconductor-compatible graphene photodetector (PD) based on a silicon-on-insulator hybrid plasmonic waveguide (HPWG) is proposed. Lumerical MODE solver is employed to investigate the modal characteristics of TM-polarized modes in the HPWG composing the PD. It is shown that the input light can be completely coupled into the photonic-like and plasmonic-like fundamental TM modes at the PD section. These two modes are exploited together in the photodetection process to enhance the PD performance. A rigorous analysis is performed in order to extract the optoelectronic characteristics of the single-layer graphene (SLG) used in the proposed structure. Lumerical 3D-FDTD solver is then employed to quantify the light interaction of the two aforementioned optical modes with the SLG. With a proper design at a wavelength of 1550 nm, the PD voltage responsivity reaches 2.8 V/W, and the photocurrent responsivity is obtained as 18.5 mA/W, while the corresponding absorption length is kept below 8µm and the noise equivalent power is limited to 3.7pW/Hz. Moreover, as the PD operates under zero bias, its photoresponse is predominated by the photothermoelectric mechanism, exhibiting a bandwidth that exceeds 180 GHz while avoiding the dark current.
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12
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Wen P, Tiwari P, Mauthe S, Schmid H, Sousa M, Scherrer M, Baumann M, Bitachon BI, Leuthold J, Gotsmann B, Moselund KE. Waveguide coupled III-V photodiodes monolithically integrated on Si. Nat Commun 2022; 13:909. [PMID: 35177604 PMCID: PMC8854727 DOI: 10.1038/s41467-022-28502-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Accepted: 01/14/2022] [Indexed: 11/10/2022] Open
Abstract
The seamless integration of III-V nanostructures on silicon is a long-standing goal and an important step towards integrated optical links. In the present work, we demonstrate scaled and waveguide coupled III-V photodiodes monolithically integrated on Si, implemented as InP/In0.5Ga0.5As/InP p-i-n heterostructures. The waveguide coupled devices show a dark current down to 0.048 A/cm2 at -1 V and a responsivity up to 0.2 A/W at -2 V. Using grating couplers centered around 1320 nm, we demonstrate high-speed detection with a cutoff frequency f3dB exceeding 70 GHz and data reception at 50 GBd with OOK and 4PAM. When operated in forward bias as a light emitting diode, the devices emit light centered at 1550 nm. Furthermore, we also investigate the self-heating of the devices using scanning thermal microscopy and find a temperature increase of only ~15 K during the device operation as emitter, in accordance with thermal simulation results.
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Affiliation(s)
- Pengyan Wen
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Preksha Tiwari
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Svenja Mauthe
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Markus Scherrer
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Michael Baumann
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bertold Ian Bitachon
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Juerg Leuthold
- ETH Zürich, Institute of Electromagnetic Fields (IEF), Gloriastrasse 35, 8092, Zürich, Switzerland
| | - Bernd Gotsmann
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland
| | - Kirsten E Moselund
- IBM Research Europe - Zurich, Säumerstrasse 4, 8803, Rüschlikon, Switzerland.
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13
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Zhou H, Dong J, Cheng J, Dong W, Huang C, Shen Y, Zhang Q, Gu M, Qian C, Chen H, Ruan Z, Zhang X. Photonic matrix multiplication lights up photonic accelerator and beyond. LIGHT, SCIENCE & APPLICATIONS 2022; 11:30. [PMID: 35115497 PMCID: PMC8814250 DOI: 10.1038/s41377-022-00717-8] [Citation(s) in RCA: 50] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 01/07/2022] [Accepted: 01/13/2022] [Indexed: 05/09/2023]
Abstract
Matrix computation, as a fundamental building block of information processing in science and technology, contributes most of the computational overheads in modern signal processing and artificial intelligence algorithms. Photonic accelerators are designed to accelerate specific categories of computing in the optical domain, especially matrix multiplication, to address the growing demand for computing resources and capacity. Photonic matrix multiplication has much potential to expand the domain of telecommunication, and artificial intelligence benefiting from its superior performance. Recent research in photonic matrix multiplication has flourished and may provide opportunities to develop applications that are unachievable at present by conventional electronic processors. In this review, we first introduce the methods of photonic matrix multiplication, mainly including the plane light conversion method, Mach-Zehnder interferometer method and wavelength division multiplexing method. We also summarize the developmental milestones of photonic matrix multiplication and the related applications. Then, we review their detailed advances in applications to optical signal processing and artificial neural networks in recent years. Finally, we comment on the challenges and perspectives of photonic matrix multiplication and photonic acceleration.
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Affiliation(s)
- Hailong Zhou
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jianji Dong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Junwei Cheng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wenchan Dong
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Chaoran Huang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong, China
| | | | - Qiming Zhang
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, 200093, China
- Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Min Gu
- Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, 200093, China
- Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Chao Qian
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, Zhejiang University, Hangzhou, 310027, China
| | - Hongsheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, Zhejiang University, Hangzhou, 310027, China
| | - Zhichao Ruan
- Interdisciplinary Center of Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
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14
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Modulators in Silicon Photonics—Heterogenous Integration & and Beyond. PHOTONICS 2022. [DOI: 10.3390/photonics9010040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The article below presents a review of current research on silicon photonics. Herein, an overview of current silicon modulator types and modern integration approaches is presented including direct bonding methods and micro-transfer printing. An analysis of current state of the art silicon modulators is also given. Finally, new prospects for III–V-silicon integration are explored and the prospects of an integrated modulator compatible with current CMOS processing is investigated.
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Abstract
With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.
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Liu J, Huang G, Wang RN, He J, Raja AS, Liu T, Engelsen NJ, Kippenberg TJ. High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits. Nat Commun 2021; 12:2236. [PMID: 33863901 PMCID: PMC8052462 DOI: 10.1038/s41467-021-21973-z] [Citation(s) in RCA: 56] [Impact Index Per Article: 18.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2020] [Accepted: 02/17/2021] [Indexed: 01/19/2023] Open
Abstract
Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 106 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 106, corresponding to 1.0 dB m-1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m-1 loss in dies of only 5 × 5 mm2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si3N4 microresonators can exceed 2 × 108. This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator's response even in the audio frequency band. Transferring this Si3N4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.
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Affiliation(s)
- Junqiu Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Guanhao Huang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Rui Ning Wang
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Jijun He
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Arslan S Raja
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tianyi Liu
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Nils J Engelsen
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland
| | - Tobias J Kippenberg
- Institute of Physics, Swiss Federal Institute of Technology Lausanne (EPFL), Lausanne, Switzerland.
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Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11041801] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.
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Liang D, E. Bowers J. Recent Progress in Heterogeneous III-V-on-Silicon Photonic Integration. ACTA ACUST UNITED AC 2021. [DOI: 10.37188/lam.2021.005] [Citation(s) in RCA: 41] [Impact Index Per Article: 13.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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Liu DS, Wu J, Xu H, Wang Z. Emerging Light-Emitting Materials for Photonic Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2003733. [PMID: 33306201 DOI: 10.1002/adma.202003733] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 07/26/2020] [Indexed: 06/12/2023]
Abstract
The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.
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Affiliation(s)
- De-Sheng Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hongxing Xu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
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CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10228201] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.
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Kou R, Hiratani T, Yagi H, Kuwatsuka H, Yen TH, Okano M, Ohno M, Kawashima H, Suzuki K, Fujiwara N, Shoji H, Yamada K. Inter-layer light transition in hybrid III-V/Si waveguides integrated by µ-transfer printing. OPTICS EXPRESS 2020; 28:19772-19782. [PMID: 32672247 DOI: 10.1364/oe.394492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2020] [Accepted: 06/14/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate low-loss and broadband light transition from III-V functional layers to a Si platform via two-stage adiabatic-crossing coupler waveguides. A 900-µm-long and 2.7-µm-thick III-V film waveguide consisting of a GaInAsP core and InP cladding layers is transferred onto an air-cladding Si photonic chip by the µ-transfer printing (µ-TP) method. An average optical coupling loss per joint of 1.26 dB is obtained in C + L telecommunication bands (1530-1635 nm). The correlation between alignment offset and measured optical coupling loss is discussed with the frequency distribution of µ-TP samples. We also performed a photoluminescence measurement to investigate the material properties in the GaInAsP layer to see if they are distorted by the strong bending stress produced during the pick-up and print steps of the µ-TP process. The peak intensity reduction of 80-90% and a wavelength shift of 0-5 nm (blue shift) were observed after the process. The series of fundamental studies presented here, which combine multiple analyses, contribute to improving our understanding of III-V/Si photonic integration by µ-TP.
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22
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Gherabli R, Grajower M, Shappir J, Mazurski N, Wofsy M, Inbar N, Khurgin JB, Levy U. Role of surface passivation in integrated sub-bandgap silicon photodetection. OPTICS LETTERS 2020; 45:2128-2131. [PMID: 32236086 DOI: 10.1364/ol.388983] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2020] [Accepted: 03/03/2020] [Indexed: 06/11/2023]
Abstract
We study experimentally the effect of oxide removal on the sub-bandgap photodetection in silicon waveguides at the telecom wavelength regime. Depassivating the device allows for the enhancement of the quantum efficiency by about 2-3 times. Furthermore, the propagation loss within the device is significantly reduced by the oxide removal. Measuring the device 60 days after the depassivation shows slight differences. We provide a possible explanation for these observations. Clearly, passivation and depassivation play an essential role in the design and the implementation of such sub-bandgap photodetector devices for applications such as on-chip light monitoring.
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Shi Y, Kunert B, De Koninck Y, Pantouvaki M, Van Campenhout J, Van Thourhout D. Novel adiabatic coupler for III-V nano-ridge laser grown on a Si photonics platform. OPTICS EXPRESS 2019; 27:37781-37794. [PMID: 31878553 DOI: 10.1364/oe.27.037781] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2019] [Accepted: 11/27/2019] [Indexed: 06/10/2023]
Abstract
While III-V lasers epitaxially grown on silicon have been demonstrated, an efficient approach for coupling them with a silicon photonics platform is still missing. In this paper, we present a novel design of an adiabatic coupler for interfacing nanometer-scale III-V lasers grown on SOI with other silicon photonics components. The starting point is a directional coupler, which achieves 100% coupling efficiency from the III-V lasing mode to the Si waveguide TE-like ground mode. To improve the robustness and manufacturability of the coupler, a linear-tapered adiabatic coupler is designed, which is less sensitive to variations and still reaches a coupling efficiency of around 98%. Nevertheless, it has a relatively large footprint and exhibits some undesired residual coupling to TM-like modes. To improve this, a more advanced adiabatic coupler whose geometry is varied along its propagation length is designed and manages to reach ∼100% coupling and decoupling within a length of 200 μm. The proposed couplers are designed for the particular case of III-V nano-ridge lasers monolithically grown using aspect-ratio-trapping (ART) together with nano-ridge engineering (NRE) but are believed to be compatible with other epitaxial III-V/Si integration platforms recently proposed. In this way, the presented coupler is expected to pave the way to integrating III-V lasers monolithically grown on SOI wafers with other photonics components, one step closer towards a fully functional silicon photonics platform.
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Abstract
This paper reviews high-power photodiodes, waveguide photodetectors, and integrated photodiode-antenna emitters with bandwidths up to 150 GHz. Results from heterogeneous III-V photodiodes on silicon and Ge-on-Si photodiode arrays for analog applications are presented.
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25
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Xie W, Komljenovic T, Huang J, Tran M, Davenport M, Torres A, Pintus P, Bowers J. Heterogeneous silicon photonics sensing for autonomous cars. OPTICS EXPRESS 2019; 27:3642-3663. [PMID: 30732381 DOI: 10.1364/oe.27.003642] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2018] [Accepted: 01/12/2019] [Indexed: 06/09/2023]
Abstract
Heterogeneous silicon photonics is uniquely positioned to address the photonic sensing needs of upcoming autonomous cars and provide the necessary cost reduction for widespread deployment. This is because it allows for wafer-scale active/passive integration, including optical sources. We present our recent research and the development of interferometric optical gyroscopes and LiDAR sensors. More specifically, we show a fully integrated gyroscope front-end occupying an area of only 4.5 mm2. We also show the first dense pitch optical phased array using heterogeneous phase shifters. The 4 µm pitch heterogeneous phase shifters provide very low V2π of only 0.35-1.4 V across 200 nm, low residual amplitude modulation of only 0.1-0.15 dB for 2π phase shift, extremely low static power consumption (<3 nW), and high speed (> 1 GHz). All of these factors make them ideal for next-generation LiDAR systems that employ optical phased arrays.
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Hu Y, Liang D, Mukherjee K, Li Y, Zhang C, Kurczveil G, Huang X, Beausoleil RG. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template. LIGHT, SCIENCE & APPLICATIONS 2019; 8:93. [PMID: 31645936 PMCID: PMC6804852 DOI: 10.1038/s41377-019-0202-6] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2019] [Revised: 08/16/2019] [Accepted: 09/11/2019] [Indexed: 05/14/2023]
Abstract
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications.
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Affiliation(s)
- Yingtao Hu
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
| | - Di Liang
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
| | - Kunal Mukherjee
- Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106 USA
| | - Youli Li
- Materials Department, University of California Santa Barbara, Santa Barbara, CA 93106 USA
| | - Chong Zhang
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
| | - Geza Kurczveil
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
| | - Xue Huang
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
| | - Raymond G. Beausoleil
- Hewlett Packard Labs, Hewlett Packard Enterprise, 1501 Page Mill Road, Palo Alto, CA 94304 USA
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Gao Y, Tsang HK, Shu C. A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth. NANOSCALE 2018; 10:21851-21856. [PMID: 30431631 DOI: 10.1039/c8nr03345e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We demonstrate a high-speed chemical vapor deposited graphene-on-silicon nitride waveguide photodetector. The device is designed with grating-like metal contact to reduce the channel spacing. Benefiting from the narrow channel spacing, a calculated transit-time-limited bandwidth of 111 GHz is derived. The resistance-capacitance-limited bandwidth is also improved due to the small relative permittivity of silicon nitride. At a wavelength of 1550 nm, we measured an electro-optic bandwidth of 38 GHz under zero bias and an intrinsic responsivity of 13 mA W-1 at 0.1 V reverse bias with a 6 μm detection length.
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Affiliation(s)
- Yun Gao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
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Ahmed ANR, Mercante A, Shi S, Yao P, Prather DW. Vertical mode transition in hybrid lithium niobate and silicon nitride-based photonic integrated circuit structures. OPTICS LETTERS 2018; 43:4140-4143. [PMID: 30160736 DOI: 10.1364/ol.43.004140] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
This Letter presents an optical mode transition structure for use in Si3N4/LiNbO3-based hybrid photonics. A gradual modal transition from a Si3N4 waveguide to a hybrid Si3N4/LiNbO3 waveguide is achieved by etching a terrace structure into the sub-micrometer thick LiNbO3 film. The etched film is then bonded to predefined low pressure chemical vapor deposition Si3N4 waveguides. Herein we analyze hybrid optical devices both with and without the aforementioned mode transition terrace structure. Experimental and simulated results indicate that inclusion of the terrace significantly improves mode transition compared to an abrupt transition, i.e., a 1.78 dB lower mode transition loss compared to the abrupt transition. The proposed transition structure is also applied to the design of hybrid Si3N4-LiNbO3 micro-ring resonators. A high-quality factor (Q) resonator is demonstrated with the terrace transition which mitigates undesired resonances.
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Gao Y, Zhou G, Zhao N, Tsang HK, Shu C. High-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors. OPTICS LETTERS 2018. [PMID: 29543245 DOI: 10.1364/ol.43.001399] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Waveguide photodetectors integrated with graphene have demonstrated potential for ultrafast response and broadband operation. Here, we demonstrate high-performance chemical vapor deposited graphene-on-silicon nitride waveguide photodetectors by enhancing the absorption of light propagating in the transverse-magnetic mode through a metal-graphene junction. A doubling in responsivity is experimentally observed. In our zero-biased metal-graphene junction, a 15 mA W-1 intrinsic responsivity and a 30 GHz bandwidth are achieved at ∼1550 nm. The results are comparable to those obtained from the best pristine graphene-based photodetectors. Our work enables new architectures for high-performance optoelectronic devices based on the graphene-on-silicon nitride platform.
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Chen H, Corboliou V, Solntsev AS, Choi DY, Vincenti MA, de Ceglia D, de Angelis C, Lu Y, Neshev DN. Enhanced second-harmonic generation from two-dimensional MoSe 2 on a silicon waveguide. LIGHT, SCIENCE & APPLICATIONS 2017; 6:e17060. [PMID: 30167202 PMCID: PMC6061909 DOI: 10.1038/lsa.2017.60] [Citation(s) in RCA: 40] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2017] [Revised: 03/28/2017] [Accepted: 03/29/2017] [Indexed: 05/20/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (TMDCs) with intrinsically broken crystal inversion symmetry and large second-order nonlinear responses have shown great promise for future nonlinear light sources. However, the sub-nanometer monolayer thickness of such materials limits the length of their nonlinear interaction with light. Here, we experimentally demonstrate the enhancement of the second-harmonic generation from monolayer MoSe2 by its integration onto a 220-nm-thick silicon waveguide. Such on-chip integration allows for a marked increase in the interaction length between the MoSe2 and the waveguide mode, further enabling phase matching of the nonlinear process. The demonstrated TMDC-silicon photonic hybrid integration opens the door to second-order nonlinear effects within the silicon photonic platform, including efficient frequency conversion, parametric amplification and the generation of entangled photon pairs.
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Affiliation(s)
- Haitao Chen
- Nonlinear Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
| | - Vincent Corboliou
- Nonlinear Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
- Institut d’Optique Graduate School, Université Paris-Sud, Palaiseau 91127, France
| | - Alexander S Solntsev
- Nonlinear Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
| | - Duk-Yong Choi
- Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
| | - Maria A Vincenti
- National Research Council, Charles M. Bowden Laboratory, Redstone Arsenal, Valhermoso Springs, AL 35898-5000, USA
| | - Domenico de Ceglia
- National Research Council, Charles M. Bowden Laboratory, Redstone Arsenal, Valhermoso Springs, AL 35898-5000, USA
| | - Costantino de Angelis
- Department of Information Engineering and INO CNR, University of Brescia, Via Branze 38, Brescia 25123, Italy
| | - Yuerui Lu
- Research School of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Dragomir N Neshev
- Nonlinear Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 2601, Australia
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Gu Z, Uryu T, Nakamura N, Inoue D, Amemiya T, Nishiyama N, Arai S. On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate. APPLIED OPTICS 2017; 56:7841-7848. [PMID: 29047768 DOI: 10.1364/ao.56.007841] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2017] [Accepted: 08/30/2017] [Indexed: 06/07/2023]
Abstract
Toward the realization of ultralow-power-consumption on-chip optical interconnection, two types of membrane-based GaInAs/InP p-i-n photodiodes were fabricated on Si host substrates by using benzocyclobutene bonding. A responsivity of 0.95 A/W was estimated with a conventional waveguide-type photodiode with an ∼30-μm-long absorption region. The fitting curves based on the experimental data indicated that an absorption efficiency above 90% could be achieved with a length of 10 μm. In addition, increased absorption per length of a photonic crystal waveguide-type photodiode was obtained because of the enhanced lateral optical confinement or the slow-light effect, enabling a further reduction in the device length.
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Moscoso-Mártir A, Müller J, Islamova E, Merget F, Witzens J. Calibrated Link Budget of a Silicon Photonics WDM Transceiver with SOA and Semiconductor Mode-Locked Laser. Sci Rep 2017; 7:12004. [PMID: 28931844 PMCID: PMC5607229 DOI: 10.1038/s41598-017-12023-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/22/2017] [Accepted: 09/01/2017] [Indexed: 11/09/2022] Open
Abstract
Based on the single channel characterization of a Silicon Photonics (SiP) transceiver with Semiconductor Optical Amplifier (SOA) and semiconductor Mode-Locked Laser (MLL), we evaluate the optical power budget of a corresponding Wavelength Division Multiplexed (WDM) link in which penalties associated to multi-channel operation and the management of polarization diversity are introduced. In particular, channel cross-talk as well as Cross Gain Modulation (XGM) and Four Wave Mixing (FWM) inside the SOA are taken into account. Based on these link budget models, the technology is expected to support up to 12 multiplexed channels without channel pre-emphasis or equalization. Forward Error Correction (FEC) does not appear to be required at 14 Gbps if the SOA is maintained at 25 °C and MLL-to-SiP as well as SiP-to-SOA interface losses can be maintained below 3 dB. In semi-cooled operation with an SOA temperature below 55 °C, multi-channel operation is expected to be compatible with standard 802.3bj Reed-Solomon FEC at 14 Gbps provided interface losses are maintained below 4.5 dB. With these interface losses and some improvements to the Transmitter (Tx) and Receiver (Rx) electronics, 25 Gbps multi-channel operation is expected to be compatible with 7% overhead hard decision FEC.
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Affiliation(s)
- Alvaro Moscoso-Mártir
- Institute of Integrated Photonics (IPH) of RWTH Aachen University, Sommerfeldstr. 24, D-52074, Aachen, Germany
| | - Juliana Müller
- Institute of Integrated Photonics (IPH) of RWTH Aachen University, Sommerfeldstr. 24, D-52074, Aachen, Germany
| | - Elmira Islamova
- Institute of Integrated Photonics (IPH) of RWTH Aachen University, Sommerfeldstr. 24, D-52074, Aachen, Germany.,E. Islamova is now with Innolume GmbH, Konrad-Adenauer-Allee 11, 44263, Dortmund, Germany
| | - Florian Merget
- Institute of Integrated Photonics (IPH) of RWTH Aachen University, Sommerfeldstr. 24, D-52074, Aachen, Germany
| | - Jeremy Witzens
- Institute of Integrated Photonics (IPH) of RWTH Aachen University, Sommerfeldstr. 24, D-52074, Aachen, Germany.
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Yang Y, Djogo G, Haque M, Herman PR, Poon JKS. Integration of an O-band VCSEL on silicon photonics with polarization maintenance and waveguide coupling. OPTICS EXPRESS 2017; 25:5758-5771. [PMID: 28380833 DOI: 10.1364/oe.25.005758] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate the hybrid integration of an O-band vertical-cavity surface-emitting laser (VCSEL) onto a silicon photonic chip using a grating coupler that is optimized to simultaneously provide feedback to maintain the single emission polarization and efficient in-plane coupling. The grating coupler was fabricated on silicon-on-insulator using a standard silicon photonics foundry process, and integrated with a commercially available VCSEL. A transparent VCSEL submount was fabricated with femtosecond laser templating and chemical etching to simplify the passive and active alignment steps. A record-high VCSEL-to-chip coupling efficiency of -5 dB was obtained at a bias current of 2.5 mA. The slope efficiency and output power are competitive with microcavity hybrid silicon lasers. The results show the feasibility of VCSELs as low threshold current on-chip sources for silicon photonics.
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Schuler S, Schall D, Neumaier D, Dobusch L, Bethge O, Schwarz B, Krall M, Mueller T. Controlled Generation of a p-n Junction in a Waveguide Integrated Graphene Photodetector. NANO LETTERS 2016; 16:7107-7112. [PMID: 27715060 DOI: 10.1021/acs.nanolett.6b03374] [Citation(s) in RCA: 29] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene p-n junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual gate to create a p-n junction in the optical absorption region of the device. While at zero bias the photothermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.
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Affiliation(s)
- Simone Schuler
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Daniel Schall
- AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany
| | | | - Lukas Dobusch
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Ole Bethge
- Institute of Solid State Electronics, Vienna University of Technology , Floragasse 7, 1040 Vienna, Austria
| | - Benedikt Schwarz
- Institute of Solid State Electronics, Vienna University of Technology , Floragasse 7, 1040 Vienna, Austria
| | - Michael Krall
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology , Gußhausstraße 27-29, 1040 Vienna, Austria
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35
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Wang R, Sprengel S, Boehm G, Muneeb M, Baets R, Amann MC, Roelkens G. 2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit. OPTICS EXPRESS 2016; 24:21081-21089. [PMID: 27607711 DOI: 10.1364/oe.24.021081] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm2 and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm2 in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.
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Goykhman I, Sassi U, Desiatov B, Mazurski N, Milana S, de Fazio D, Eiden A, Khurgin J, Shappir J, Levy U, Ferrari AC. On-Chip Integrated, Silicon-Graphene Plasmonic Schottky Photodetector with High Responsivity and Avalanche Photogain. NANO LETTERS 2016; 16:3005-13. [PMID: 27053042 PMCID: PMC4868376 DOI: 10.1021/acs.nanolett.5b05216] [Citation(s) in RCA: 85] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2015] [Revised: 04/02/2016] [Indexed: 05/21/2023]
Abstract
We report an on-chip integrated metal graphene-silicon plasmonic Schottky photodetector with 85 mA/W responsivity at 1.55 μm and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3 V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain ∼2. This paves the way to graphene integrated silicon photonics.
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Affiliation(s)
- Ilya Goykhman
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
| | - Ugo Sassi
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
| | - Boris Desiatov
- Department of Applied
Physics, The Benin School of Engineering and Computer Science, The Hebrew University, Jerusalem 91904, Israel
| | - Noa Mazurski
- Department of Applied
Physics, The Benin School of Engineering and Computer Science, The Hebrew University, Jerusalem 91904, Israel
| | - Silvia Milana
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
| | - Domenico de Fazio
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
| | - Anna Eiden
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
| | - Jacob Khurgin
- Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Joseph Shappir
- Department of Applied
Physics, The Benin School of Engineering and Computer Science, The Hebrew University, Jerusalem 91904, Israel
| | - Uriel Levy
- Department of Applied
Physics, The Benin School of Engineering and Computer Science, The Hebrew University, Jerusalem 91904, Israel
| | - Andrea C. Ferrari
- Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 OFA, U.K.
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37
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Zhao D, Liu S, Yang H, Ma Z, Reuterskiöld-Hedlund C, Hammar M, Zhou W. Printed Large-Area Single-Mode Photonic Crystal Bandedge Surface-Emitting Lasers on Silicon. Sci Rep 2016; 6:18860. [PMID: 26727551 PMCID: PMC4698743 DOI: 10.1038/srep18860] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2015] [Accepted: 11/27/2015] [Indexed: 12/02/2022] Open
Abstract
We report here an optically pumped hybrid III-V/Si photoic crystal surface emitting laser (PCSEL), consisting of a heterogeneously integrated III-V InGaAsP quantum well heterostructure gain medium, printed on a patterned defect-free Si photonic crystal (PC) bandedge cavity. Single mode lasing was achieved for a large area laser, with a side-mode suppression ratio of 28 dB, for lasing operation temperature ~200 K. Two types of lasers were demonstrated operating at different temperatures. Detailed modal analysis reveals the lasing mode matches with the estimated lasing gain threshold conditions. Our demonstration promises a hybrid laser sources on Si towards three-dimensional (3D) integrated Si photonics for on-chip wavelength-division multiplex (3D WDM) systems for a wide range of volume photonic/electronic applications in computing, communication, sensing, imaging, etc.
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Affiliation(s)
- Deyin Zhao
- Department of Electrical Engineering, University of Texas at Arlington, TX 76019, USA
| | - Shihchia Liu
- Department of Electrical Engineering, University of Texas at Arlington, TX 76019, USA
| | - Hongjun Yang
- Department of Electrical Engineering, University of Texas at Arlington, TX 76019, USA
| | - Zhenqiang Ma
- Department of Electrical and Computer Engineering, University of Wisconsin-Madison, WI 53706, USA
| | - Carl Reuterskiöld-Hedlund
- KTH-Royal Institute of Technology, School of Information and Communication Technology, Electrum 229, 164 40 Kista, Sweden
| | - Mattias Hammar
- KTH-Royal Institute of Technology, School of Information and Communication Technology, Electrum 229, 164 40 Kista, Sweden
| | - Weidong Zhou
- Department of Electrical Engineering, University of Texas at Arlington, TX 76019, USA
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38
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39
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Shiue RJ, Gao Y, Wang Y, Peng C, Robertson AD, Efetov DK, Assefa S, Koppens FHL, Hone J, Englund D. High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit. NANO LETTERS 2015; 15:7288-93. [PMID: 26372880 DOI: 10.1021/acs.nanolett.5b02368] [Citation(s) in RCA: 72] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cutoff at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.
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Affiliation(s)
- Ren-Jye Shiue
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Yuanda Gao
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - Yifei Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Cheng Peng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Alexander D Robertson
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - Dmitri K Efetov
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Solomon Assefa
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States
| | - Frank H L Koppens
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels, Barcelona, Spain
| | - James Hone
- Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States
| | - Dirk Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
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40
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Dhakal A, Raza A, Peyskens F, Subramanian AZ, Clemmen S, Le Thomas N, Baets R. Efficiency of evanescent excitation and collection of spontaneous Raman scattering near high index contrast channel waveguides. OPTICS EXPRESS 2015; 23:27391-404. [PMID: 26480401 DOI: 10.1364/oe.23.027391] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We develop and experimentally verify a theoretical model for the total efficiency η0 of evanescent excitation and subsequent collection of spontaneous Raman signals by the fundamental quasi-TE and quasi-TM modes of a generic photonic channel waveguide. Single-mode silicon nitride (Si3N4) slot and strip waveguides of different dimensions are used in the experimental study. Our theoretical model is validated by the correspondence between the experimental and theoretical absolute values within the experimental errors. We extend our theoretical model to silicon-on-insulator (SOI) and titanium dioxide (TiO2) channel waveguides and study η0 as a function of index contrast, polarization of the mode and the geometry of the waveguides. We report nearly 2.5 (4 and 5) times larger η0 for the fundamental quasi-TM mode when compared to η0 for the fundamental quasi-TE mode of a typical Si3N4 (TiO2 and SOI) strip waveguide. η0 for the fundamental quasi-TE mode of a typical Si3N4, (TiO2 and SOI) slot waveguide is about 7 (22 and 90) times larger when compared to η0 for the fundamental quasi-TE mode of a strip waveguide of the similar dimensions. We attribute the observed enhancement to the higher electric field discontinuity present in high index contrast waveguides.
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41
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Nahmias MA, Tait AN, Shastri BJ, de Lima TF, Prucnal PR. Excitable laser processing network node in hybrid silicon: analysis and simulation. OPTICS EXPRESS 2015; 23:26800-26813. [PMID: 26480191 DOI: 10.1364/oe.23.026800] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The combination of ultrafast laser dynamics and dense on-chip multiwavelength networking could potentially address new domains of real-time signal processing that require both speed and complexity. We present a physically realistic optoelectronic simulation model of a circuit for dynamical laser neural networks and verify its behavior. We describe the physics, dynamics, and parasitics of one network node, which includes a bank of filters, a photodetector, and excitable laser. This unconventional circuit exhibits both cascadability and fan-in, critical properties for the large-scale networking of information processors based on laser excitability. In addition, it can be instantiated on a photonic integrated circuit platform and requires no off-chip optical I/O. Our proposed processing system could find use in emerging applications, including cognitive radio and low-latency control.
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42
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Tait AN, Chang J, Shastri BJ, Nahmias MA, Prucnal PR. Demonstration of WDM weighted addition for principal component analysis. OPTICS EXPRESS 2015; 23:12758-12765. [PMID: 26074530 DOI: 10.1364/oe.23.012758] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We consider an optical technique for performing tunable weighted addition using wavelength-division multiplexed (WDM) inputs, the enabling function of a recently proposed photonic spike processing architecture [J. Lightwave Technol., 32 (2014)]. WDM weighted addition provides important advantages to performance, integrability, and networking capability that were not possible in any past approaches to optical neurocomputing. In this letter, we report a WDM weighted addition prototype used to find the first principal component of a 1Gbps, 8-channel signal. Wideband, multivariate techniques have immediate relevance to modern radio systems, and photonic spike processing networks enabled by WDM could open new domains of information processing that bring unprecedented bandwidth and intelligence to problems in radio communications, ultrafast control, and scientific computing.
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43
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Frost T, Jahangir S, Stark E, Deshpande S, Hazari A, Zhao C, Ooi BS, Bhattacharya P. Monolithic electrically injected nanowire array edge-emitting laser on (001) silicon. NANO LETTERS 2014; 14:4535-4541. [PMID: 24971807 DOI: 10.1021/nl5015603] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A silicon-based laser, preferably electrically pumped, has long been a scientific and engineering goal. We demonstrate here, for the first time, an edge-emitting InGaN/GaN disk-in-nanowire array electrically pumped laser emitting in the green (λ = 533 nm) on (001) silicon substrate. The devices display excellent dc and dynamic characteristics with values of threshold current density, differential gain, T0 and small signal modulation bandwidth equal to 1.76 kA/cm(2), 3 × 10(-17) cm(2), 232 K, and 5.8 GHz respectively under continuous wave operation. Preliminary reliability measurements indicate a lifetime of 7000 h. The emission wavelength can be tuned by varying the alloy composition in the quantum disks. The monolithic nanowire laser on (001)Si can therefore address wide-ranging applications such as solid state lighting, displays, plastic fiber communication, medical diagnostics, and silicon photonics.
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Affiliation(s)
- Thomas Frost
- Center for Photonics and Multiscale Nanomaterials, 1301 Beal Avenue, Department of Electrical Engineering and Computer Science, University of Michigan , Ann Arbor, Michigan 48109, United States
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44
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Huang X, Gao Y, Xu X. Bonding III-V material to SOI with transparent and conductive ZnO film at low temperature. OPTICS EXPRESS 2014; 22:14285-14292. [PMID: 24977526 DOI: 10.1364/oe.22.014285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A procedure of bonding III-V material to SOI at low temperature using conductive and transparent adhesive ZnO as intermediate layer is demonstrated. Bonding layer thickness of less than 100 nm was achieved in our experiment that guaranteed good light coupling efficiency between III-V and silicon. This bonding method showed good bonding strength with shear stress of 80 N/cm(2). The lowest resistance of the bonded samples was 48.9 Ω and the transmittance of the spin-coated ZnO layer was above 99%. This procedure is applicable for fabricating hybrid III-V/Si lasers.
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45
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Matsuo S, Fujii T, Hasebe K, Takeda K, Sato T, Kakitsuka T. Directly modulated buried heterostructure DFB laser on SiO₂/Si substrate fabricated by regrowth of InP using bonded active layer. OPTICS EXPRESS 2014; 22:12139-47. [PMID: 24921334 DOI: 10.1364/oe.22.012139] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
We describe the growth of InP layer using an ultrathin III-V active layer that is directly bonded to SiO₂/Si substrate to fabricate a buried heterostructure (BH) laser. Using a 250-nm-thick bonded active layer, we succeeded in fabricating a BH distributed feedback (DFB) laser on SiO₂/Si substrate. The use of a lateral current injection structure is important for forming a p-i-n junction using bonded thin film. The fabricated DFB laser is directly modulated by a 25.8-Gbit/s NRZ signal at 50°C. These results indicate that our fabrication method is a promising way to fabricate high-efficiency lasers at a low cost.
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46
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Jiao Y, Pello J, Mejia AM, Shen L, Smalbrugge B, Geluk EJ, Smit M, van der Tol J. Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices. OPTICS LETTERS 2014; 39:1645-1648. [PMID: 24690859 DOI: 10.1364/ol.39.001645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3 dB/cm has been demonstrated.
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47
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Beling A, Cross AS, Piels M, Peters J, Zhou Q, Bowers JE, Campbell JC. InP-based waveguide photodiodes heterogeneously integrated on silicon-on-insulator for photonic microwave generation. OPTICS EXPRESS 2013; 21:25901-25906. [PMID: 24216816 DOI: 10.1364/oe.21.025901] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA · GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
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48
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Hsu MH, Lin CC, Kuo HC. The metal grating design of plasmonic hybrid III-V/Si evanescent lasers. OPTICS EXPRESS 2013; 21:20210-20219. [PMID: 24105566 DOI: 10.1364/oe.21.020210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A hybrid III-V/silicon laser design with a metal grating layer inserted in between is proposed and numerically studied. The metal grating layer is buried in a silicon ridge waveguide surrounded by silicon dioxide, and its structural parameters such as periodicity, width and depth can be varied for optimization purpose. The plasmonic effect originated from the grating layer can manage optical fields between III-V and silicon layers in hopes of dimension reduction. The substrate is planarized to minimize the bonding failure. A numerical algorithm with various combinations of metal grating and waveguide structural parameters was created and the optimal design with 730 nm grating period and 600 nm of buried waveguide ridge height was obtained by minimizing the corresponding laser threshold. With top AlInGaAs quantum wells and optimized design of hybrid metal/silicon waveguide, a 0.6 μm(-1) threshold gain can be achieved.
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49
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Tang Y, Peters JD, Bowers JE. Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission. OPTICS EXPRESS 2012; 20:11529-11535. [PMID: 22565772 DOI: 10.1364/oe.20.011529] [Citation(s) in RCA: 21] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.
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Affiliation(s)
- Yongbo Tang
- Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA.
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50
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Tang Y, Chen HW, Jain S, Peters JD, Westergren U, Bowers JE. 50 Gb/s hybrid silicon traveling-wave electroabsorption modulator. OPTICS EXPRESS 2011; 19:5811-5816. [PMID: 21451605 DOI: 10.1364/oe.19.005811] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
We have demonstrated a traveling-wave electroabsorption modulator based on the hybrid silicon platform. For a device with a 100 μm active segment, the small-signal electro/optical response renders a 3 dB bandwidth of around 42 GHz and its modulation efficiency reaches 23 GHz/V. A dynamic extinction ratio of 9.8 dB with a driving voltage swing of only 2 V was demonstrated at a transmission rate of 50 Gb/s. This represents a significant improvement for modulators compatible with integration of silicon-based photonic integrated circuits.
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Affiliation(s)
- Yongbo Tang
- Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA 93106, USA.
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