Nanoscale-Resistive Switching in Forming-Free Zinc Oxide Memristive Structures

Approaches for Memristive Structures Using Scratching Probe Nanolithography: Towards Neuromorphic Applications

This paper proposes two different approaches to studying resistive switching of oxide thin films using scratching probe nanolithography of atomic force microscopy (AFM). These approaches allow us to assess the effects of memristor size and top-contact thickness on resistive switching. For that purpose, we investigated scratching probe nanolithography regimes using the Taguchi method, which is known as a reliable method for improving the reliability of the result. The AFM parameters, including normal load, scratch distance, probe speed, and probe direction, are optimized on the photoresist thin film by the Taguchi method. As a result, the pinholes with diameter ranged from 25.4 ± 2.2 nm to 85.1 ± 6.3 nm, and the groove array with a depth of 40.5 ± 3.7 nm and a roughness at the bottom of less than a few nanometers was formed. Then, based on the Si/TiN/ZnO/photoresist structures, we fabricated and investigated memristors with different spot sizes and TiN top contact thickness. As a result, the HRS/LRS ratio, U_SET, and I_LRS are well controlled for a memristor size from 27 nm to 83 nm and ranged from ~8 to ~128, from 1.4 ± 0.1 V to 1.8 ± 0.2 V, and from (1.7 ± 0.2) × 10^-10 A to (4.2 ± 0.6) × 10^-9 A, respectively. Furthermore, the HRS/LRS ratio and U_SET are well controlled at a TiN top contact thickness from 8.3 ± 1.1 nm to 32.4 ± 4.2 nm and ranged from ~22 to ~188 and from 1.15 ± 0.05 V to 1.62 ± 0.06 V, respectively. The results can be used in the engineering and manufacturing of memristive structures for neuromorphic applications of brain-inspired artificial intelligence systems.

Effect of carbon on the co-presence of metallic tungsten as a nucleation agent and Eu2+ in glass: crystallization of CaO-Al2O3-SiO2 glass probed with Eu2+ luminescence

This study demonstrated simple redox control in glasses by improving the method used to added glass raw materials. Specifically, the effect of carbon on the co-presence of metallic tungsten (W) particles as nucleation agents and Eu2+ ions in CaO-Al2O3-SiO2 (CAS) glass was investigated via their crystallization to form CAS glass-ceramics (GCs). In this study, the glass specimens were prepared by mixing glass cullet containing metallic W particles and Eu2+ ions, respectively, with a glass batch containing carbon. Whereas the glass specimen was yellowish because of the presence of Eu2+ when carbon was not added during the remelting process, the glass specimen prepared with carbon was black because of the presence of metallic W particles. In addition, this specimen displayed the 470 nm emission band in its fluorescence spectrum recorded under 393 nm excitation, which was attributed to the presence of Eu2+. According to the fluorescence and transmission spectra, the glass specimen showed a darker coloration and more intense 470 nm emission band compared with the specimen prepared by the conventional melting method that included a remelting process. These results indicated that metallic W and Eu2+ were reduced with greater efficiency by the melting method that involved mixing the glass cullet and batch. In addition, the heat-treated glass specimen prepared by the aforementioned mixing method contained a greater amount of metastable CaAl2Si2O8 with increasing heat treatment time as revealed by X-ray diffraction analysis and scanning electron microscopy observation. The intensity of the 470 nm emission band decreased with increasing intensity of the band at 420 nm because of the incorporation of Eu2+ into the crystalline phase, and the increase in intensity of the 420 nm band was lineally proportional to the volume fraction of the crystallized glass specimens. The results therefore indicated that the co-presence of metallic W particles as nucleation agents and Eu2+ as a probe for tracking the crystallization process was achieved by the addition of carbon during the remelting process of mixed cullet containing W and Eu2+ through crystallization of the CAS glass. The results thus demonstrate the importance of improving the method used to added glass raw materials.

Flexible Transient Resistive Memory Based on Biodegradable Composites

Physical transient electronics have attracted more attention as the basis for building green electronics and biomedical devices. However, there are difficulties in selecting materials for the fabricated devices to take into account both biodegradability and high performance. In this paper, a physically transient resistive random-access memory (RRAM) device was fabricated by using egg protein and graphene quantum dot composites as active layers. The sandwich structure composed of Al/EA:GQD/ITO shows a good write-once-multiple-read memory characteristic, and the introduced GQD improves the switching current ratio of the device. By using the sensitivity of GQDs to ultraviolet light, the logic operation of the "OR gate" is completed. Furthermore, the device exhibits a physical transient behavior and good biodegradability due to the dissolution behavior in deionized water. These results suggest that the device is a favorable candidate for the construction of memory elements for transient electronic systems.