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Maier C, Leitgeb V, Egger L, Köck A. Size-Dependent Thresholds in CuO Nanowires: Investigation of Growth from Microstructured Thin Films for Gas Sensing. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1207. [PMID: 39057883 PMCID: PMC11280273 DOI: 10.3390/nano14141207] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2024] [Revised: 07/09/2024] [Accepted: 07/10/2024] [Indexed: 07/28/2024]
Abstract
An experimental characterization of cupric oxide nanowire (CuO NW) growth from thermally oxidized, microstructured Cu thin films is performed. We have systematically studied the influence of the thickness and dimension of Cu layers on the synthesis of CuO NW. The objective was to determine the optimum Cu geometries for increased CuO NWs growth to bridge the gap between adjacent Cu structures directly on the chip for gas sensing applications. Thresholds for CuO-NW growth regarding film thickness and lateral dimensions are identified based on SEM images. For a film thickness of 560 nm, NWs with lengths > 500 nm start to grow from the edges of Cu structures with an area ≥ 4 µm2. NWs growing from the upper surface were observed for an area ≥ 16 µm2. NW growth between adjacent thermally oxidized thin films was analyzed. The study provides information on the most relevant parameters of CuO NWs growth, which is mandatory for integrating CuO NWs as gas sensor components directly on microchips. Based on this result, the gap size of the structure was varied to find the optimum value of 3 µm.
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Affiliation(s)
- Christian Maier
- Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, 8700 Leoben, Austria; (V.L.); (L.E.)
- Institute for Chemistry and Technology of Materials, TU Graz, Stremayrgasse 9, 8010 Graz, Austria
| | - Verena Leitgeb
- Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, 8700 Leoben, Austria; (V.L.); (L.E.)
| | - Larissa Egger
- Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, 8700 Leoben, Austria; (V.L.); (L.E.)
| | - Anton Köck
- Materials Center Leoben Forschung GmbH, Roseggerstrasse 12, 8700 Leoben, Austria; (V.L.); (L.E.)
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2
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Mim JJ, Hasan M, Chowdhury MS, Ghosh J, Mobarak MH, Khanom F, Hossain N. A comprehensive review on the biomedical frontiers of nanowire applications. Heliyon 2024; 10:e29244. [PMID: 38628721 PMCID: PMC11016983 DOI: 10.1016/j.heliyon.2024.e29244] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2024] [Revised: 04/03/2024] [Accepted: 04/03/2024] [Indexed: 04/19/2024] Open
Abstract
This comprehensive review examines the immense capacity of nanowires, nanostructures characterized by unbounded dimensions, to profoundly transform the field of biomedicine. Nanowires, which are created by combining several materials using techniques such as electrospinning and vapor deposition, possess distinct mechanical, optical, and electrical properties. As a result, they are well-suited for use in nanoscale electronic devices, drug delivery systems, chemical sensors, and other applications. The utilization of techniques such as the vapor-liquid-solid (VLS) approach and template-assisted approaches enables the achievement of precision in synthesis. This precision allows for the customization of characteristics, which in turn enables the capability of intracellular sensing and accurate drug administration. Nanowires exhibit potential in biomedical imaging, neural interfacing, and tissue engineering, despite obstacles related to biocompatibility and scalable manufacturing. They possess multifunctional capabilities that have the potential to greatly influence the intersection of nanotechnology and healthcare. Surmounting present obstacles has the potential to unleash the complete capabilities of nanowires, leading to significant improvements in diagnostics, biosensing, regenerative medicine, and next-generation point-of-care medicines.
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Affiliation(s)
- Juhi Jannat Mim
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Mehedi Hasan
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Md Shakil Chowdhury
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Jubaraz Ghosh
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Md Hosne Mobarak
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Fahmida Khanom
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Nayem Hossain
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
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Ariga K. Materials Nanoarchitectonics at Dynamic Interfaces: Structure Formation and Functional Manipulation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:271. [PMID: 38204123 PMCID: PMC10780059 DOI: 10.3390/ma17010271] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 12/25/2023] [Accepted: 12/29/2023] [Indexed: 01/12/2024]
Abstract
The next step in nanotechnology is to establish a methodology to assemble new functional materials based on the knowledge of nanotechnology. This task is undertaken by nanoarchitectonics. In nanoarchitectonics, we architect functional material systems from nanounits such as atoms, molecules, and nanomaterials. In terms of the hierarchy of the structure and the harmonization of the function, the material created by nanoarchitectonics has similar characteristics to the organization of the functional structure in biosystems. Looking at actual biofunctional systems, dynamic properties and interfacial environments are key. In other words, nanoarchitectonics at dynamic interfaces is important for the production of bio-like highly functional materials systems. In this review paper, nanoarchitectonics at dynamic interfaces will be discussed, looking at recent typical examples. In particular, the basic topics of "molecular manipulation, arrangement, and assembly" and "material production" will be discussed in the first two sections. Then, in the following section, "fullerene assembly: from zero-dimensional unit to advanced materials", we will discuss how various functional structures can be created from the very basic nanounit, the fullerene. The above examples demonstrate the versatile possibilities of architectonics at dynamic interfaces. In the last section, these tendencies will be summarized, and future directions will be discussed.
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Affiliation(s)
- Katsuhiko Ariga
- Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan;
- Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8561, Chiba, Japan
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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Leshchenko ED, Dubrovskii VG. An Overview of Modeling Approaches for Compositional Control in III-V Ternary Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101659. [PMID: 37242075 DOI: 10.3390/nano13101659] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/25/2023] [Revised: 05/11/2023] [Accepted: 05/15/2023] [Indexed: 05/28/2023]
Abstract
Modeling of the growth process is required for the synthesis of III-V ternary nanowires with controllable composition. Consequently, new theoretical approaches for the description of epitaxial growth and the related chemical composition of III-V ternary nanowires based on group III or group V intermix were recently developed. In this review, we present and discuss existing modeling strategies for the stationary compositions of III-V ternary nanowires and try to systematize and link them in a general perspective. In particular, we divide the existing approaches into models that focus on the liquid-solid incorporation mechanisms in vapor-liquid-solid nanowires (equilibrium, nucleation-limited, and kinetic models treating the growth of solid from liquid) and models that provide the vapor-solid distributions (empirical, transport-limited, reaction-limited, and kinetic models treating the growth of solid from vapor). We describe the basic ideas underlying the existing models and analyze the similarities and differences between them, as well as the limitations and key factors influencing the stationary compositions of III-V nanowires versus the growth method. Overall, this review provides a basis for choosing a modeling approach that is most appropriate for a particular material system and epitaxy technique and that underlines the achieved level of the compositional modeling of III-V ternary nanowires and the remaining gaps that require further studies.
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Affiliation(s)
- Egor D Leshchenko
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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Barrio R, González N, Portugal Á, Morant C, Gandía JJ. Hydrogenated Amorphous Silicon-Based Nanomaterials as Alternative Electrodes to Graphite for Lithium-Ion Batteries. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4400. [PMID: 36558253 PMCID: PMC9785924 DOI: 10.3390/nano12244400] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/11/2022] [Revised: 12/02/2022] [Accepted: 12/06/2022] [Indexed: 06/17/2023]
Abstract
Graphite is the material most used as an electrode in commercial lithium-ion batteries. On the other hand, it is a material with low energy capacity, and it is considered a raw critical material given its large volume of use. In the current energy context, we must promote the search for alternative materials based on elements that are abundant, sustainable and that have better performance for energy storage. We propose thin materials based on silicon, which has a storage capacity eleven times higher than graphite. Nevertheless, due to the high-volume expansion during lithiation, it tends to crack, limiting the life of the batteries. To solve this problem, hydrogenated amorphous silicon has been researched, in the form of thin film and nanostructures, since, due to its amorphous structure, porosity and high specific surface, it could better absorb changes in volume. These thin films were grown by plasma-enhanced chemical vapor deposition, and then the nanowires were obtained by chemical etching. The compositional variations of films deposited at different temperatures and the incorporation of dopants markedly influence the stability and longevity of batteries. With these optimized electrodes, we achieved batteries with an initial capacity of 3800 mAhg-1 and 82% capacity retention after 50 cycles.
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Affiliation(s)
- Rocío Barrio
- Centro de Investigaciones Energéticas, Mediambientales y Tecnológicas, Avenida Complutense 40, CP-28040 Madrid, Spain
| | - Nieves González
- Centro de Investigaciones Energéticas, Mediambientales y Tecnológicas, Avenida Complutense 40, CP-28040 Madrid, Spain
| | - Álvaro Portugal
- Department of Applied Physics, Instituto de Ciencias de Materiales Nicolás Cabrera, Autonomous University of Madrid, CP-28049 Madrid, Spain
| | - Carmen Morant
- Department of Applied Physics, Instituto de Ciencias de Materiales Nicolás Cabrera, Autonomous University of Madrid, CP-28049 Madrid, Spain
| | - José Javier Gandía
- Centro de Investigaciones Energéticas, Mediambientales y Tecnológicas, Avenida Complutense 40, CP-28040 Madrid, Spain
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Dietrich M, Paillardet L, Valero A, Deschanels M, Azaïs P, Gentile P, Sadki S. New PEDOT Derivatives Electrocoated on Silicon Nanowires Protected with ALD Nanometric Alumina for Ultrastable Microsupercapacitors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:5997. [PMID: 36079375 PMCID: PMC9456597 DOI: 10.3390/ma15175997] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2022] [Revised: 08/19/2022] [Accepted: 08/24/2022] [Indexed: 06/15/2023]
Abstract
This work deals with electroactive conducting polymers (ECPs) used as a complementary component on purely capacitive silicon nanowires protected by a 3 nm alumina layer. Accordingly, in this work, we use a fast and simple deposition method to create a pseudocapacitive material based on the electropolymerization in aqueous micellar media (SDS and SDBS 0.01 M) of hydroxymethyl-EDOT (EDOT-OH) onto 3 nm alumina-coated silicon nanowires (Al3@SiNWs). The composite material displays remarkable capacitive behavior with a specific capacitance of 4.75 mF·cm-2 at a current density of 19 µA·cm-2 in aqueous Na2SO4 electrolyte.
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Affiliation(s)
- Marc Dietrich
- CEA, Grenoble INP, CNRS IRIG-SyMMES UMR 5819, University Grenoble Alpes, F-38000 Grenoble, France
- CEA, Grenoble INP, IRIG-Pheliqs, University Grenoble Alpes, F-38000 Grenoble, France
| | - Loïc Paillardet
- CEA, Grenoble INP, CNRS IRIG-SyMMES UMR 5819, University Grenoble Alpes, F-38000 Grenoble, France
- CEA, Grenoble INP, IRIG-Pheliqs, University Grenoble Alpes, F-38000 Grenoble, France
| | - Anthony Valero
- CEA, Grenoble INP, CNRS IRIG-SyMMES UMR 5819, University Grenoble Alpes, F-38000 Grenoble, France
- CEA, Grenoble INP, IRIG-Pheliqs, University Grenoble Alpes, F-38000 Grenoble, France
| | - Mathieu Deschanels
- CEA, Grenoble INP, CNRS IRIG-SyMMES UMR 5819, University Grenoble Alpes, F-38000 Grenoble, France
| | - Philippe Azaïs
- CEA-LITEN-DEHT, University Grenoble Alpes, F-38000 Grenoble, France
| | - Pascal Gentile
- CEA, Grenoble INP, IRIG-Pheliqs, University Grenoble Alpes, F-38000 Grenoble, France
| | - Saïd Sadki
- CEA, Grenoble INP, CNRS IRIG-SyMMES UMR 5819, University Grenoble Alpes, F-38000 Grenoble, France
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Planar Junctionless Field-Effect Transistor for Detecting Biomolecular Interactions. SENSORS 2022; 22:s22155783. [PMID: 35957340 PMCID: PMC9371156 DOI: 10.3390/s22155783] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2022] [Revised: 07/28/2022] [Accepted: 07/30/2022] [Indexed: 02/01/2023]
Abstract
Label-free field-effect transistor-based immunosensors are promising candidates for proteomics and peptidomics-based diagnostics and therapeutics due to their high multiplexing capability, fast response time, and ability to increase the sensor sensitivity due to the short length of peptides. In this work, planar junctionless field-effect transistor sensors (FETs) were fabricated and characterized for pH sensing. The device with SiO2 gate oxide has shown voltage sensitivity of 41.8 ± 1.4, 39.9 ± 1.4, 39.0 ± 1.1, and 37.6 ± 1.0 mV/pH for constant drain currents of 5, 10, 20, and 50 nA, respectively, with a drain to source voltage of 0.05 V. The drift analysis shows a stability over time of −18 nA/h (pH 7.75), −3.5 nA/h (pH 6.84), −0.5 nA/h (pH 4.91), 0.5 nA/h (pH 3.43), corresponding to a pH drift of −0.45, −0.09, −0.01, and 0.01 per h. Theoretical modeling and simulation resulted in a mean value of the surface states of 3.8 × 1015/cm2 with a standard deviation of 3.6 × 1015/cm2. We have experimentally verified the number of surface sites due to APTES, peptide, and protein immobilization, which is in line with the theoretical calculations for FETs to be used for detecting peptide-protein interactions for future applications.
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Fabrication of Silicon Nanowire Sensors for Highly Sensitive pH and DNA Hybridization Detection. NANOMATERIALS 2022; 12:nano12152652. [PMID: 35957087 PMCID: PMC9370444 DOI: 10.3390/nano12152652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/03/2022] [Revised: 07/27/2022] [Accepted: 07/28/2022] [Indexed: 11/25/2022]
Abstract
A highly sensitive silicon nanowire (SiNW)-based sensor device was developed using electron beam lithography integrated with complementary metal oxide semiconductor (CMOS) technology. The top-down fabrication approach enables the rapid fabrication of device miniaturization with uniform and strictly controlled geometric and surface properties. This study demonstrates that SiNW devices are well-aligned with different widths and numbers for pH sensing. The device consists of a single nanowire with 60 nm width, exhibiting an ideal pH responsivity (18.26 × 106 Ω/pH), with a good linear relation between the electrical response and a pH level range of 4–10. The optimized SiNW device is employed to detect specific single-stranded deoxyribonucleic acid (ssDNA) molecules. To use the sensing area, the sensor surface was chemically modified using (3-aminopropyl) triethoxysilane and glutaraldehyde, yielding covalently linked nanowire ssDNA adducts. Detection of hybridized DNA works by detecting the changes in the electrical current of the ssDNA-functionalized SiNW sensor, interacting with the targeted ssDNA in a label-free way. The developed biosensor shows selectivity for the complementary target ssDNA with linear detection ranging from 1.0 × 10−12 M to 1.0 × 10−7 M and an attained detection limit of 4.131 × 10−13 M. This indicates that the use of SiNW devices is a promising approach for the applications of ion detection and biomolecules sensing and could serve as a novel biosensor for future biomedical diagnosis.
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Silica- and Silicon-Based Nanostructures. NANOMATERIALS 2022; 12:nano12081270. [PMID: 35457975 PMCID: PMC9025556 DOI: 10.3390/nano12081270] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 03/25/2022] [Indexed: 12/04/2022]
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