Superconducting Materials and Devices Grown by Focused Ion and Electron Beam Induced Deposition

Water-assisted purification during electron beam-induced deposition of platinum and gold

Direct fabrication of pure metallic nanostructures is one of the main aims of focused electron beam-induced deposition (FEBID). It was recently achieved for gold deposits by the co-injection of a water precursor and the gold precursor Au(tfac)Me2. In this work results are reported, using the same approach, on a different gold precursor, Au(acac)Me2, as well as the frequently used platinum precursor MeCpPtMe3. As a water precursor MgSO4·7H2O was used. The purification during deposition led to a decrease of the carbon-to-gold ratio (in atom %) from 2.8 to 0.5 and a decrease of the carbon-to-platinum ratio (in atom %) from 6-7 to 0.2. The purification was done in a regular scanning electron microscope using commercially available components and chemicals, which paves the way for a broader application of direct etching-assisted FEBID to obtain pure metallic structures.

Formation of negative ions from cobalt tricarbonyl nitrosyl Co(CO)3NO clusters

Electron attachment and corresponding dissociative electron attachment (DEA) to cobalt tricarbonyl nitrosyl (Co(CO)3NO) clusters have been studied by co-expansion with Ar gas into a high vacuum. A monochromatic electron beam was utilized to generate negative ions and the resulting reaction products were identified using mass spectrometry. The ion fragments corresponding to Co(CO)3NO monomers closely resemble results from earlier gas phase experiments and studies conducted on Co(CO)3NO in He nanodroplets. However, contrary to the gas phase or He nanodroplet ion yields, a resonance structure comprising several peaks at energies above ∼4 eV was observed both in the case of molecular clusters [Co(CO)3NO]n- (with n = 1, 2, 3) and clusters comprising DEA fragments. Additionally, the ion yields of numerous other clusters such as ions without nitrosyl ([Co(CO)4]-, [Co2(CO)5]-), clusters consisting of two fragments such as ([Co2(CO)NO]-, [Co2(CO)(NO)2]-, [Co2(CO)2NO]-, [Co2(CO)2(NO)2]-, [Co3(CO)(NO)3]-, [Co3(CO)8(NO)3]-, [Co3(CO)(NO)2]-, [Co3(CO)3(NO)2]-, and [Co3(CO)5(NO)2]-) were recorded. Moreover, NO bond dissociation was confirmed with the [Co(CO)2N]-ion and with N- or O-retaining cluster ions, such as [Co2(CO)(NO)N]-, [Co2(CO)2(NO)N]-, [Co3(CO)2(NO)N]-, [Co3(CO)3(NO)N]- and [Co3(CO)(NO)2N]-, or [Co2(CO)2O]-, [Co2(CO)3O]-, [Co3(CO)3O]-, [Co3(CO)4O]-and [Co3(CO)2(NO)O]- respectively.

Current-voltage characteristics of focused ion beam fabricated superconducting tungsten meanders

We report on the superconducting properties and intermediate resistive steps (IRS) observed in the current-voltage characteristics (IVC) of tungsten meander (MW) structures fabricated using focused ion beam (FIB) technique. Three number of MWs were studied with individual wire widths of 240 nm, 640 nm and 850 nm with superconducting transition temperatures (TC) of 4.5 K, 4.55 K and 4.60 K respectively. The measured normal state resistance values at 8 K for these wires are of ∼182 kΩ, ∼49 kΩ and ∼32 kΩ, respectively as a function of increasing wire widths; are higher than the quantum of resistance (h/4e2=6.45kΩ,his a Planck constant andeis electronic charge) indicating extreme disorder nature of the fabricated samples. The variation of resistance with respect to temperature (forT Collapse

Key Words

• focused ion beam deposition
• intermediate resistive steps (IRS)
• meander structures
• phase slip (PS)
• superconductivity

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Affiliation(s)

Abhishek Kumar Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
Sudhir Husale Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
M P Saravanan Low Temperature Laboratory, UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001, India
Bikash Gajar Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
Majid Yousuf Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
Abhilasha Saini Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
Mahesh Gaurav Yadav Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
R P Aloysius Quantum Nanophotonics Metrology Division, CSIR-National Physical Laboratory, Dr K. S. Krishnan Marg, New Delhi 110012, India Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India

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Dynamics of Dispersive Measurements of Flux-Qubit States: Energy-Level Splitting Connected to Quantum Wave Mechanics

Superconducting flux qubits have many advantages as a storage of quantum information, such as broad range tunability of frequency, small-size fabricability, and high controllability. In the flux qubit-oscillator, qubits are connected to SQUID resonators for the purpose of performing dispersive non-destructive readouts of qubit signals with high fidelity. In this work, we propose a theoretical model for analyzing quantum characteristics of a flux qubit-oscillator on the basis of quantum solutions obtained using a unitary transformation approach. The energy levels of the combined system (qubit + resonator) are analyzed in detail. Equally spaced each energy level of the resonator splits into two parts depending on qubit states. Besides, coupling of the qubit to the resonator brings about an additional modification in the split energy levels. So long as the coupling strength and the tunnel splitting are not zero but finite values, the energy-level splitting of the resonator does not disappear. We conclude that quantum nondemolition dispersive measurements of the qubit states are possible by inducing bifurcation of the resonator states through the coupling.

The 3D Controllable Fabrication of Nanomaterials with FIB-SEM Synchronization Technology

Nanomaterials with unique structures and functions have been widely used in the fields of microelectronics, biology, medicine, and aerospace, etc. With advantages of high resolution and multi functions (e.g., milling, deposition, and implantation), focused ion beam (FIB) technology has been widely developed due to urgent demands for the 3D fabrication of nanomaterials in recent years. In this paper, FIB technology is illustrated in detail, including ion optical systems, operating modes, and combining equipment with other systems. Together with the in situ and real-time monitoring of scanning electron microscopy (SEM) imaging, a FIB-SEM synchronization system achieved 3D controllable fabrication from conductive to semiconductive and insulative nanomaterials. The controllable FIB-SEM processing of conductive nanomaterials with a high precision is studied, especially for the FIB-induced deposition (FIBID) 3D nano-patterning and nano-origami. As for semiconductive nanomaterials, the realization of high resolution and controllability is focused on nano-origami and 3D milling with a high aspect ratio. The parameters of FIB-SEM and its working modes are analyzed and optimized to achieve the high aspect ratio fabrication and 3D reconstruction of insulative nanomaterials. Furthermore, the current challenges and future outlooks are prospected for the 3D controllable processing of flexible insulative materials with high resolution.

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Direct-write of tungsten-carbide nanoSQUIDs based on focused ion beam induced deposition

NanoSQUIDs are quantum sensors that excel in detecting a small change in magnetic flux with high sensitivity and high spatial resolution. Here, we employ resist-free direct-write Ga⁺ Focused Ion Beam Induced Deposition (FIBID) techniques to grow W-C nanoSQUIDs, and we investigate their electrical response to changes in the magnetic flux. Remarkably, FIBID allows the fast (3 min) growth of 700 nm × 300 nm nanoSQUIDs based on narrow nanobridges (50 nm wide) that act as Josephson junctions. Albeit the SQUIDs exhibit a comparatively low modulation depth and obtain a high inductance, the observed transfer coefficient (output voltage to magnetic flux change) is comparable to other SQUIDs (up to 1300 μV/Φ ₀), which correlates with the high resistivity of W-C in the normal state. We discuss here the potential of this approach to reduce the active area of the nanoSQUIDs to gain spatial resolution as well as their integration on cantilevers for scanning-SQUID applications.