Low-Temperature Hydrothermal Growth of ZnO Nanowires on AZO Substrates for FACsPb(IBr)3 Perovskite Solar Cells

The impact of CBz-PAI interlayer in various HTL-based flexible perovskite solar cells: A drift-diffusion numerical study

In perovskite solar cells (PSCs), the charge carrier recombination obstacles mainly occur at the ETL/perovskite and HTL/perovskite interfaces, which play a decisive role in the solar cell performance. Therefore, this study aims to enhance the flexible PSC (FPSC) efficiency by adding the newly designed CBz-PAI-interlayer (simply CBz-PAI-IL) at the perovskite/HTL interface. In addition, substantial work has been carried out on five different HTLs (Se/Te-Cu2O, CuGaO2, V2O5, and CuSCN, including conventional Spiro-OMeTAD as a reference HTL with and without CBz-PAI-IL), using drift-diffusion simulation to find suitable FPSC design to attain the maximum PCE. Interestingly, PET/ITO/AZO/ZnO NWs/FACsPbBrI3/CBz-PAI/Se/Te-Cu2O/Au device architecture demonstrates the highest achievable power conversion efficiency (PCE) of 27.9 %. The findings of this study confirmed that the reference device (without IL) displays a large valence band edge (VBE)/highest occupied molecular orbital (HOMO) energy level misalignment compared to the modified interface device (with CBz-PAI-IL that reduces VBE/HOMO level mismatch) that eases the hole transport, simultaneously, it reduces the charge carrier recombinations at the interface, resulting in diminished Voc losses in the device. Furthermore, the influence of perovskite absorber thickness and defect density, parasitic resistances, and working temperature are systematically examined to govern the superior FPSC efficiency and concurrently understand the device physics.

Control of ZnO nanowires growth in flexible perovskite solar cells: A mini-review

Due to their excellent properties, Zinc oxide nanowires (ZnO NW) have been attractive and considered as a promising electron-transporting layer (ETL) in flexible Perovskite Solar Cells (FPSCs). Since the first report on ZnO NWs-based FPSCs giving 2.6 % power conversion efficiency (in 2013), great improvements have been made, allowing to reach up to∼15 % nowadays. However, some issues still need to be addressed, especially on flexible substrates, to achieve uniform and well-aligned ZnO NWs via low-cost chemical solution techniques. Several parameters, such as the growing method (time, temperature, precursors concentration), addition of seed layer (thickness, roughness, annealing temperature) and substrate (rigid or flexible), play a crucial role in ZnO NWs properties (i.e., length, diameter, density and aspect ratio). In this review, these parameters allowing to control the properties of ZnO NWs, like the growth techniques, utilization of seed layers and the growing method (time or precursors concentration) have been summarized. Then, a particular focus on the ZnO NW's role in FPSCs as well as the use of these results on the development of ZnO NWs-based FPSCs have been highlighted.

ZnO Nanowires: Growth, Properties, and Energy Applications

As a biocompatible semiconductor composed of abundant elements, ZnO, in the form of nanowires, exhibits remarkable properties, mainly originating from its wurtzite structure and correlated with its high aspect ratio at nanoscale dimensions [...].