The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

The development of nanotechnology has provided an opportunity to integrate a wide range of phenomena and disciplines from the atomic scale, the molecular scale, and the nanoscale into materials. Nanoarchitectonics as a post-nanotechnology concept is a methodology for developing functional material systems using units such as atoms, molecules, and nanomaterials. Especially, molecular nanoarchitectonics has been strongly promoted recently by incorporating nanotechnological methods into organic synthesis. Examples of research that have attracted attention include the direct observation of organic synthesis processes at the molecular level with high resolution, and the control of organic syntheses with probe microscope tips. These can also be considered as starting points for nanoarchitectonics. In this review, these examples of molecular nanoarchitectonics are introduced, and future prospects of nanoarchitectonics are discussed. The fusion of basic science and the application of practical functional materials will complete materials chemistry for everything.

Capillary-force-driven self-assembly of carbon nanotubes: from ab initio calculations to modeling of self-assembly

In elasto-capillary driven self-assembly of arrays of carbon nanotubes (CNTs) different factors play a role, from the mechanical properties of CNTs to the array geometry. In this work, we provide a multi-scale investigation where we first use density functional theory (DFT) to predict fully ab initio relevant mechanical properties such as Young's modulus, Poisson's ratio, and surface energy. To the best of our knowledge, we are the first to report DFT calculations of the surface energy of CNTs. Then, we feed the computed DFT parameters into a model for capillary-force-driven self-assembly of CNTs. By doing so, we are able to derive and predict cross-correlation between material parameters and array architecture.

Elastocapillary Force Induced Alignment of Large Area Planar Nanowires

Achieving large scale precise positioning of the vapor-liquid-solid (VLS) nanowires is one of the biggest challenges for mass production of nanowire-based devices. Although there have been many noteworthy progresses in postgrowth nanowire alignment method development over the past few decades, these methods are mostly suitable for low density applications only. For high density applications such as transistors, both high yield and density are required. Here, we report an elastocapillary force-induced nanowire-aligning method that is extremely simple, clean, and can achieve single/multiple nanowire arrays with up to 98.8% yield and submicron pitch between the nanowires.

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

The wafer-level integration of high aspect ratio silicon nanostructures is an essential part of the fabrication of nanodevices. Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires. Noble metal nanoparticles were used to locally etch the silicon substrate. This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching. The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer. Different metals (Au, Pt, Pd, Cu, and Ir) were investigated to derive a set of technologies as platform for specific applications. Especially, the shape of the 3D structures and the resulting reflectance have been investigated. The Si nanostructures fabricated using Au nanoparticles show a perfect light absorption with a reflectance below 0.3%. The demonstrated technology can be integrated into common fabrication processes for microelectromechanical systems.