Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

Electrical control of spatial resolution in mixed-dimensional heterostructured photodetectors

Low-dimensional nanomaterials, such as one-dimensional (1D) nanomaterials and layered 2D materials, have exhibited significance for their respective unique electronic and optoelectronic properties. Here we show that a mixed-dimensional heterostructure with building blocks from multiple dimensions will present a synergistic effect on photodetection. A carbon nanotube (CNT)-[Formula: see text]-graphene photodetector is representative on this issue. Its spatial resolution can be electrically switched between high-resolution mode (HRM) and low-resolution mode (LRM) revealed by scanning photocurrent microscopy (SPCM). The reconfigurable spatial resolution can be attributed to the asymmetric geometry and the gate-tunable Fermi levels of these low-dimensional materials. Significantly, an interference fringe with 334 nm in period was successfully discriminated by the device working at HRM, confirming the efficient electrical control. Electrical control of spatial resolution in CNT-[Formula: see text]-graphene devices reveals the potential of the mixed-dimensional architectures in future nanoelectronics and nano-optoelectronics.

Two-dimensional excitons in monolayer transition metal dichalcogenides from radial equation and variational calculations

Exciton energy spectra of monolayer transition metal dichalcogenides (TMDs) in various dielectric environments are studied with an effective mass model using the Keldysh potential for the screened electron-hole interaction. Two-dimensional (2D) excitons are calculated by solving a radial equation (RE) with a shooting method, using boundary conditions that are derived by applying the asymptotic properties of the Keldysh potential. For any given main quantum number n, the exciton Bohr orbit shrinks as [Formula: see text] becomes larger (m is the orbital quantum number) resulting in increased strength of the electron-hole interaction and a decrease of the exciton energy. Further, both the exciton energy and its effective radius decrease linearly with [Formula: see text]. The screened hydrogen model (SHM) (Olsen et al 2016 Phys. Rev. Lett. 116 056401) is examined by comparing its exciton energy spectra with our RE solutions. While the SHM is found to describe the nonhydrogenic exciton Rydberg series (i.e. the energy's dependence on n) reasonably well, it fails to account for the linear dependence of the exciton energy on the orbital quantum number. The exciton effective radius expression of the SHM can characterize the exciton radius's dependence on n, but it cannot properly describe the exciton radius's dependence on m, which is the cause of the SHM's poor description of the exciton energy's m-dependence. Analytical variational wave-functions are constructed with the 2D hydrogenic wave-functions for a number of strongly bound exciton states, and very close exciton energies and wave-functions are obtained with the variational method and the RE solution (exciton energies are within a 6% of deviation). The variational wave-functions are further applied to study the Stark effects in 2D TMDs, with an analytical expression derived for evaluating the redshift the ground state energy.

Influence of interlayer interactions on the relaxation dynamics of excitons in ultrathin MoS2

Interlayer interactions play a crucial role in modifying the optical and electronic properties of layered materials in a complex way, which is of key importance for the performance of the optoelectronic devices based on these novel materials. In this contribution, we performed an investigation into the underlying influence of interlayer interactions on the relaxation dynamics of excitons in ultrathin MoS₂ using the femtosecond transient absorption spectroscopy technique. The experimental results manifest that interlayer interactions in bilayer MoS₂ can largely facilitate the exciton-phonon scattering process and inhibit the radiative recombination process, which consequently accelerates the relaxation rate of A excitons and results in the decrease of the relaxation lifetime of A excitons in bilayer MoS₂.

In-Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devices

Mono- to few-layers of 2D semiconducting materials have uniquely inherent optical, electronic, and magnetic properties that make them ideal for probing fundamental scientific phenomena up to the 2D quantum limit and exploring their emerging technological applications. This Review focuses on the fundamental optoelectronic studies and potential applications of in-plane isotropic/anisotropic 2D semiconducting heterostructures. Strong light-matter interaction, reduced dimensionality, and dielectric screening in mono- to few-layers of 2D semiconducting materials result in strong many-body interactions, leading to the formation of robust quasiparticles such as excitons, trions, and biexcitons. An in-plane isotropic nature leads to the quasi-2D particles, whereas, an anisotropic nature leads to quasi-1D particles. Hence, in-plane isotropic/anisotropic 2D heterostructures lead to the formation of quasi-1D/2D particle systems allowing for the manipulation of high binding energy quasi-1D particle populations for use in a wide variety of applications. This Review emphasizes an exciting 1D-2D particles dynamic in such heterostructures and their potential for high-performance photoemitters and exciton-polariton lasers. Moreover, their scopes are also broadened in thermoelectricity, piezoelectricity, photostriction, energy storage, hydrogen evolution reactions, and chemical sensor fields. The unique in-plane isotropic/anisotropic 2D heterostructures may open the possibility of engineering smart devices in the nanodomain with complex opto-electromechanical functions.

Dense Electron-Hole Plasma Formation and Ultralong Charge Lifetime in Monolayer MoS2 via Material Tuning

Many-body interactions in photoexcited semiconductors can bring about strongly interacting electronic states, culminating in the fully ionized matter of electron-hole plasma (EHP) and electron-hole liquid (EHL). These exotic phases exhibit unique electronic properties, such as metallic conductivity and metastable high photoexcitation density, which can be the basis for future transformative applications. However, the cryogenic condition required for its formation has limited the study of dense plasma phases to a purely academic pursuit in a restricted parameter space. This paradigm can potentially change with the recent experimental observation of these phases in atomically thin MoS₂ and MoTe₂ at room temperature. A fundamental understanding of EHP and EHL dynamics is critical for developing novel applications on this versatile layered platform. In this work, we studied the formation and dissipation of EHP in monolayer MoS₂. Unlike previous results in bulk semiconductors, our results reveal that electromechanical material changes in monolayer MoS₂ during photoexcitation play a significant role in dense EHP formation. Within the free-standing geometry, photoexcitation is accompanied by an unconstrained thermal expansion, resulting in a direct-to-indirect gap electronic transition at a critical lattice spacing and fluence. This dramatic altering of the material's energetic landscape extends carrier lifetimes by 2 orders of magnitude and allows the density required for EHP formation. The result is a stable dense plasma state that is sustained with modest optical photoexcitation. Our findings pave the way for novel applications based on dense plasma states in two-dimensional semiconductors.

Copper(i) sulfide: a two-dimensional semiconductor with superior oxidation resistance and high carrier mobility

Two-dimensional (2D) semiconductors with suitable direct band gaps, high carrier mobility, and excellent open-air stability are especially desirable for material applications. Herein, we show theoretical evidence of a new phase of a copper(i) sulfide (Cu₂S) monolayer, denoted δ-Cu₂S, with both novel electronic properties and superior oxidation resistance. We find that both monolayer and bilayer δ-Cu₂S have much lower formation energy than the known β-Cu₂S phase. Given that β-Cu₂S sheets have been recently synthesized in the laboratory (Adv. Mater.2016, 28, 8271), the higher stability of δ-Cu₂S than that of β-Cu₂S sheets suggests a high possibility of experimental realization of δ-Cu₂S. Stability analysis indicates that δ-Cu₂S is dynamically and thermally stable. Notably, δ-Cu₂S exhibits superior oxidation resistance, due to the high activation energy of 1.98 eV for the chemisorption of O₂ on δ-Cu₂S. On its electronic properties, δ-Cu₂S is a semiconductor with a modest direct band gap (1.26 eV) and an ultrahigh electron mobility of up to 6880 cm² V^-1 s^-1, about 27 times that (246 cm² V^-1 s^-1) of the β-Cu₂S bilayer. The marked difference between the electron and hole mobilities of δ-Cu₂S suggests easy separation of electrons and holes for solar energy conversion. Combination of these novel properties makes δ-Cu₂S a promising 2D material for future applications in electronics and optoelectronics with high thermal and chemical stability.

Many-Body Complexes in 2D Semiconductors

2D semiconductors such as transition metal dichalcogenides (TMDs) and black phosphorus (BP) are currently attracting great attention due to their intrinsic bandgaps and strong excitonic emissions, making them potential candidates for novel optoelectronic applications. Optoelectronic devices fabricated from 2D semiconductors exhibit many-body complexes (exciton, trion, biexciton, etc.) which determine the materials optical and electrical properties. Characterization and manipulation of these complexes have become a reality due to their enhanced binding energies as a direct result from reduced dielectric screening and enhanced Coulomb interactions in the 2D regime. Furthermore, the atomic thickness and extremely large surface-to-volume ratio of 2D semiconductors allow the possibility of modulating their inherent optical, electrical, and optoelectronic properties using a variety of different environmental stimuli. To fully realize the potential functionalities of these many-body complexes in optoelectronics, a comprehensive understanding of their formation mechanism is essential. A topical and concise summary of the recent frontier research progress related to many-body complexes in 2D semiconductors is provided here. Moreover, detailed discussions covering the aspects of fundamental theory, experimental investigations, modulation of properties, and optoelectronic applications are given. Lastly, personal insights into the current challenges and future outlook of many-body complexes in 2D semiconducting materials are presented.

Study on photoelectric characteristics of monolayer WS2 films

It is important to determine the time-dependent evolution of the excited monolayer WS₂, which will provide a basis for the reasonable design of optoelectronic devices based on two-dimensional transition metal dichalcogenides. Here, we made a simple and large-area photodetector based on the monolayer WS₂, with high light sensitivity and fast response, benefiting from the special dynamics of carrier involving the exciton, trion, and charge. Moreover, we tested the relaxation behavior of the excited monolayer WS₂ by employing transient absorption (TA). It was found that the multi-body interaction among exciton would occur after the density of pump photon increases to 3.45 × 10¹⁴ photons per cm². The exciton dissociation accompanying the generation of trion would appear in the photo-induced relaxation process, which would be a benefit for the operation of this photodetector. Increasing the energy of the exciton is good for the generation of carrier by comparing the relaxation behavior of WS₂ excited to A and B exciton states. However, the bound exciton relaxation, originating from the capture process of the defect state, would exist and play an unfavorable role during the functioning of devices.

It is important to determine the time-dependent evolution of the excited monolayer WS₂, which will provide a basis for the reasonable design of optoelectronic devices based on two-dimensional transition metal dichalcogenides.

Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications

Rhenium disulfide (ReS₂) is an attractive candidate for photodetection applications owing to its thickness-independent direct band gap. Despite various photodetection studies using two-dimensional semiconductors, the trade-off between responsivity and response time under varying measurement conditions has not been studied in detail. This report presents a comprehensive study of the architectural, laser power and gate bias dependence of responsivity and speed in supported and suspended ReS₂ phototransistors. Photocurrent scans show uniform photogeneration across the entire channel because of enhanced optical absorption and a direct band gap in multilayer ReS₂. A high responsivity of 4 A W^-1 (at 50 ms response time) and a low response time of 20 μs (at 4 mA W^-1 responsivity) make this one of the fastest reported transition-metal dichalcogenide photodetectors. Occupancy of intrinsic (bulk ReS₂) and extrinsic (ReS₂/SiO₂ interface) traps is modulated using gate bias to demonstrate tunability of the response time (responsivity) over 4 orders (15×) of magnitude, highlighting the versatility of these photodetectors. Differences in the trap distributions of suspended and supported channel architectures, and their occupancy under different gate biases enable switching the dominant operating mechanism between either photogating or photoconduction. Further, a new metric that captures intrinsic photodetector performance by including the trade-off between its responsivity and speed, besides normalizing for the applied bias and geometry, is proposed and benchmarked for this work.

Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides

We study the effect of point-defect chalcogen vacancies on the optical properties of monolayer transition metal dichalcogenides using ab initio GW and Bethe-Salpeter equation calculations. We find that chalcogen vacancies introduce unoccupied in-gap states and occupied resonant defect states within the quasiparticle continuum of the valence band. These defect states give rise to a number of strongly bound defect excitons and hybridize with excitons of the pristine system, reducing the valley-selective circular dichroism. Our results suggest a pathway to tune spin-valley polarization and other optical properties through defect engineering.

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS₂, MoSe₂, WS₂ and WSe₂

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS₂, MoSe₂, WS₂, and WSe₂, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS₂, MoSe₂, WS₂, and WSe₂.

Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

van der Waals heterostructures that are usually formed using atomically thin transition-metal dichalcogenides (TMDCs) with a direct band gap in the near-infrared to the visible range are promising candidates for low-dimension optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and the substrate or between adjacent 2D layers plays an important role in modifying the properties of the individual 2D material or device performances through Coulomb interaction or forming interlayer excitons. Here, we report the realization of quasi-zero-dimensional (0D) photon emission of WS₂ in a coupled hybrid structure of monolayer WS₂ and InGaN quantum dots (QDs). An interfacially bound exciton, i.e., the coupling between the excitons in WS₂ and the electrons in QDs, has been identified. The emission of this interfacially bound exciton inherits the 0D confinement of QDs as well as the spin-valley physics of excitons in monolayer WS₂. The effective coupling between 2D materials and conventional semiconductors observed in this work provides an effective way to realize the 0D emission of 2D materials and opens the potential of compact on-chip integration of valleytronics and conventional electronics and optoelectronics.

Self-consistent dielectric constant determination for monolayer WSe2

Frequency-dependent dielectric constant dispersion of monolayer WSe₂, ε(ω)=ε₁(ω)+i ε₂(ω), was obtained from simultaneously measured transmittance and reflectance spectra. Optical transitions of the trion as well as A-, B-, and C-excitons are clearly resolved in the  ε₂ spectrum. A consistent Kramers-Kronig transformation between the ε₁ and  ε₂ spectra support the validity of the applied analysis. It is found that the A- and B-exciton splitting in the case of the double-layer WSe₂ can be attributed to the spin-orbit coupling, which is larger than that in the monolayer WSe₂. In addition, the temperature-induced evolution of the A-exciton energy and its width are explained by model equations with electron-phonon interactions.

Symmetry regimes for circular photocurrents in monolayer MoSe2

In monolayer transition metal dichalcogenides helicity-dependent charge and spin photocurrents can emerge, even without applying any electrical bias, due to circular photogalvanic and photon drag effects. Exploiting such circular photocurrents (CPCs) in devices, however, requires better understanding of their behavior and physical origin. Here, we present symmetry, spectral, and electrical characteristics of CPC from excitonic interband transitions in a MoSe2 monolayer. The dependence on bias and gate voltages reveals two different CPC contributions, dominant at different voltages and with different dependence on illumination wavelength and incidence angles. We theoretically analyze symmetry requirements for effects that can yield CPC and compare these with the observed angular dependence and symmetries that occur for our device geometry. This reveals that the observed CPC effects require a reduced device symmetry, and that effects due to Berry curvature of the electronic states do not give a significant contribution.

Effects of Vacancy Defects on the Electronic and Optical Properties of Monolayer PbSe

Defect engineering is promising for tailoring the properties of atomically thin materials. By creating defects via Se vacancies, we study the optoelectronic properties of monolayer PbSe. We obtain the single-particle properties using the density functional theory plus a first-principles-based typical medium approximation. The absorption spectra are explored by solving the Bethe-Salpeter equation. Our results reveal that monolayer PbSe is defect-sensitive but defect-tolerant. The latter fingerprint is due to the absence of defect-induced in-gap, localized states. Our results predict that Se vacancies are the dominant defect type in disordered PbSe monolayer. We observe that increasing Se vacancy concentrations δ renormalize the energy bandgap E_g, which increased from 0.21 eV for the pristine to as high as 0.45 eV at high δ. The high tunability of the optoelectronic properties of monolayer PbSe using defect-engineering makes this material a candidate for exploring flexible electronic with potential technological applications in nanoelectronics.

Nature of Excitons in Bidimensional WSe₂ by Hybrid Density Functional Theory Calculations

2D tungsten diselenide (2D-WSe₂) is one of the most successful bidimensional materials for optoelectronic and photonic applications, thanks to its strong photoluminescence properties and to a characteristic large exciton binding energy. Although these optical properties are widely recognized by the scientific community, there is no general understanding of the atomistic details of the excitonic species giving rise to them. In this work, we present a density functional theory investigation of excitons in 2D-WSe₂, where we compare results obtained by standard generalized gradient approximation (GGA) methods (including spin-orbit coupling) with those by hybrid density functionals. Our study provides information on the size of the self-trapped exciton, the number and type of atoms involved, the structural reorganization, the self-trapping energy, and the photoluminescence energy, whose computed value is in good agreement with experimental measurements in the literature. Moreover, based on the comparative analysis of the self-trapping energy for the exciton with that for isolated charge carriers (unbound electrons and holes), we also suggest a simplified approach for the theoretical estimation of the excitonic binding energy, which can be compared with previous estimates from different approaches or from experimental data.

Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors

MoS₂ has received a lot of attention lately as a semiconducting channel material for electronic devices, in part due to its large band gap as compared to that of other 2D materials. Yet, the performance and reliability of these devices are still severely limited by defects which act as traps for charge carriers, causing severely reduced mobilities, hysteresis, and long-term drift. Despite their importance, these defects are only poorly understood. One fundamental problem in defect characterization is that due to the large defect concentration only the average response to bias changes can be measured. On the basis of such averaged data, a detailed analysis of their properties and identification of particular defect types are difficult. To overcome this limitation, we here characterize single defects on MoS₂ devices by performing measurements on ultrascaled transistors (∼65 × 50 nm) which contain only a few defects. These single defects are characterized electrically at varying gate biases and temperatures. The measured currents contain random telegraph noise, which is due to the transfer of charge between the channel of the transistors and individual defects, visible only due to the large impact of a single elementary charge on the local electrostatics in these small devices. Using hidden Markov models for statistical analysis, we extract the charge capture and emission times of a number of defects. By comparing the bias-dependence of the measured capture and emission times to the prediction of theoretical models, we provide simple rules to distinguish oxide traps from adsorbates on these back-gated devices. In addition, we give simple expressions to estimate the vertical and energetic positions of the defects. Using the methods presented in this work, it is possible to locate the sources of performance and reliability limitations in 2D devices and to probe defect distributions in oxide materials with 2D channel materials.

Optical absorption by indirect excitons in a transition metal dichalcogenide/hexagonal boron nitride heterostructure

We study optical transitions in spatially indirect excitons in transition metal dichalcogenide (TMDC) heterostructures separated by an integer number of hexagonal boron nitride (h-BN) monolayers. By solving the Schrödinger equation with the Keldysh potential for a spatially indirect exciton, we obtain eigenfunctions and eigenenergies for the ground and excited states and study their dependence on the interlayer separation, controlled by varying the number of h-BN monolayers. The oscillator strength, optical absorption coefficient, and optical absorption factor, the fraction of incoming photons absorbed in the TMDC/h-BN/TMDC heterostructure, are evaluated and studied as a function of the interlayer separation. Using input parameters from the existing literature which give the largest and the smallest spatially indirect exciton binding energy, we provide upper and lower bounds on all quantities presented.

Recent Progress on Stability and Passivation of Black Phosphorus

From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in-plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective applications. Early studies were limited by the degradation of black phosphorous surfaces in air. Recently, several robust strategies have been developed to mitigate these issues, and these novel developments can potentially allow researchers to exploit the extraordinary properties of this material and devices made out of it. Here, the fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed. Device performances of encapsulated BP are also compared with nonencapsulated BP. In addition, BP possesses sensitive anisotropic photophysical surface properties such as excitons, surface plasmons/phonons, and topologically protected and Dirac semi-metallic surface states. Ambient degradation as well as any passivation method used to protect the surface could affect the intrinsic surface properties of BP. These properties and the extent of their modifications by both the degradation and passivation are reviewed.

Enhanced Electrochemical and Thermal Transport Properties of Graphene/MoS2 Heterostructures for Energy Storage: Insights from Multiscale Modeling

Graphene has been combined with molybdenum disulfide (MoS₂) to ameliorate the poor cycling stability and rate performance of MoS₂ in lithium ion batteries, yet the underlying mechanisms remain less explored. Here, we develop multiscale modeling to investigate the enhanced electrochemical and thermal transport properties of graphene/MoS₂ heterostructures (GM-Hs) with a complex morphology. The calculated electronic structures demonstrate the greatly improved electrical conductivity of GM-Hs compared to MoS₂. Increasing the graphene layers in GM-Hs not only improves the electrical conductivity but also stabilizes the intercalated Li atoms in GM-Hs. It is also found that GM-Hs with three graphene layers could achieve and maintain a high thermal conductivity of 85.5 W/(m·K) at a large temperature range (100-500 K), nearly 6 times that of pure MoS₂ [∼15 W/(m·K)], which may accelerate the heat conduction from electrodes to the ambient. Our quantitative findings may shed light on the enhanced battery performances of various graphene/transition-metal chalcogenide composites in energy storage devices.

Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling

Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS₂ photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS₂ and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS₂. Consequently, the overall photocurrent of the hybrid 1L-MoS₂ photodetector was observed to be 250 times better than that of the pristine 1L-MoS₂ photodetector. In addition, the photoresponsivity and photodetectivity of the hybrid photodetector were effectively improved by a factor of ∼1000. This study provides a new approach for realizing highly efficient optoelectronic devices based on TMDCs.

Orbital Symmetry and the Optical Response of Single-Layer MX Monochalcogenides

We show that the absorption spectra of single-layer GaSe and GaTe in the hexagonal phase feature exciton peaks with distinct polarization selectivity. We investigate these distinct features from first-principles calculations using the GW-BSE formalism. We show that, because of the symmetry of the bands under in-plane mirror symmetry, the bound exciton states selectively couple to either in-plane or out-of-plane polarization of the light. In particular, for a p-polarized light absorption experiment, the absorption peaks of the hydrogenic s-like excitons emerge at large angle of incidence, while the overall absorbance reduces over the rest of the spectrum.

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS₂, MoSe₂, MoTe₂, WS₂ and WSe₂, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.

Controlled dynamic screening of excitonic complexes in 2D semiconductors

We report a combined theoretical/experimental study of dynamic screening of excitons in media with frequency-dependent dielectric functions. We develop an analytical model showing that interparticle interactions in an exciton are screened in the range of frequencies from zero to the characteristic binding energy depending on the symmetries and transition energies of that exciton. The problem of the dynamic screening is then reduced to simply solving the Schrodinger equation with an effectively frequency-independent potential. Quantitative predictions of the model are experimentally verified using a test system: neutral, charged and defect-bound excitons in two-dimensional monolayer WS2, screened by metallic, liquid, and semiconducting environments. The screening-induced shifts of the excitonic peaks in photoluminescence spectra are in good agreement with our model.

Strong magnetic resonances and largely enhanced second-harmonic generation of colloidal MoS2 and ReS2@Au nanoantennas with assembled 2D nanosheets

Colloidal disk-like and sphere-like MoS₂ nanoantennas are synthesized. They consist of curly and interlaced 2D nanosheets. The resonance peak of the MoS₂ nanoantennas can be tuned from 500 to 900 nm by adjusting the size and shape. The strong magnetic and electric resonances of the dielectric antennas are revealed by theoretical calculations with Mie theory. The second harmonic generation (SHG) of the exfoliated nanosheets and the synthesized nanodisks and nanospheres is investigated and compared by scanning the excitation laser wavelength. SHG enhancement of 52 fold is observed for the spherical nanoantennas at 400 nm, which is attributed to the nanoantenna-enhanced two-photon resonance excitation of the D exciton of MoS₂ monolayers. Moreover, ReS₂@Au plasmon-dielectric hybrid nanoantennas are also synthesized. The SHG of Au nanoparticles is enhanced 8.5 times by the coupling of the two types of nanoantennas. This new class of optical nanoantennas consisting of 2D materials and exhibiting unique linear and nonlinear optical responses will bring promising applications ranging from nonlinear photonics to photochemistry.

Colour selective control of terahertz radiation using two-dimensional hybrid organic inorganic lead-trihalide perovskites

Controlling and modulating terahertz signals is of fundamental importance to allow systems level applications. We demonstrate an innovative approach for controlling the propagation properties of terahertz (THz) radiation, through use of both the excitation optical wavelength (colour) and intensity. We accomplish this using two-dimensional (2D) layered hybrid trihalide perovskites that are deposited onto silicon substrates. The absorption properties of these materials in the visible range can be tuned by changing the number of inorganic atomic layers in between the organic cation layers. Optical absorption in 2D perovskites occurs over a broad spectral range above the bandgap, resulting in free carrier generation, as well as over a narrow spectral range near the bandedge due to exciton formation. We find that only the latter contribution gives rise to photo-induced THz absorption. By patterning multiple 2D perovskites with different optical absorption properties onto a single device, we demonstrate both colour selective modulation and focusing of THz radiation. These findings open new directions for creating active THz devices.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}

Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

Two-dimensional (2D) materials have attracted extensive interest due to their excellent electrical, thermal, mechanical, and optical properties. Graphene has been one of the most explored 2D materials. However, its zero band gap has limited its applications in electronic devices. Transition metal dichalcogenide (TMDC), another kind of 2D material, has a nonzero direct band gap (same charge carrier momentum in valence and conduction band) at monolayer state, promising for the efficient switching devices (e.g., field-effect transistors). This review mainly focuses on the recent advances in charge carrier mobility and the challenges to achieve high mobility in the electronic devices based on 2D-TMDC materials and also includes an introduction of 2D materials along with the synthesis techniques. Finally, this review describes the possible methodology and future prospective to enhance the charge carrier mobility for electronic devices.

Two-photon absorption and subband photodetection in monolayer MoS2

We develop a theoretical model to quantify the two-photon absorption (2 PA) coefficients of monolayer MoS₂. Based on two-dimensional excitons, our model reveals the 2 PA coefficient spectrum on the order of 0.01-0.1 cm/MW in the near-infrared for monolayer MoS₂. As compared to the band theory for bulk semiconductors, these coefficients are enhanced by at least one order of magnitude. Our model is in agreement with light-intensity-dependent photocurrent measurements on a monolayer MoS₂, subband photodetector with femtosecond laser pulses.

Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS2 Monolayers by Alkali Metal Halides

Toward the large-area deposition of MoS₂ layers, we employ metal-organic precursors of Mo and S for a facile and reproducible van der Waals epitaxy on c-plane sapphire. Exposing c-sapphire substrates to alkali metal halide salts such as KI or NaCl together with the Mo precursor prior to the start of the growth process results in increasing the lateral dimensions of single crystalline domains by more than 2 orders of magnitude. The MoS₂ grown this way exhibits high crystallinity and optoelectronic quality comparable to single-crystal MoS₂ produced by conventional chemical vapor deposition methods. The presence of alkali metal halides suppresses the nucleation and enhances enlargement of domains while resulting in chemically pure MoS₂ after transfer. Field-effect measurements in polymer electrolyte-gated devices result in promising electron mobility values close to 100 cm² V^-1 s^-1 at cryogenic temperatures.

Photoresponse of Natural van der Waals Heterostructures

Van der Waals heterostructures consisting of two-dimensional materials offer a platform to obtain materials by design and are very attractive owing to unique electronic states. Research on 2D van der Waals heterostructures (vdWH) has so far been focused on fabricating individually stacked atomically thin unary or binary crystals. Such systems include graphene, hexagonal boron nitride, and members of the transition metal dichalcogenide family. Here we present our experimental study of the optoelectronic properties of a naturally occurring vdWH, known as franckeite, which is a complex layered crystal composed of lead, tin, antimony, iron, and sulfur. We present here that thin film franckeite (60 nm < d < 100 nm) behaves as a narrow band gap semiconductor demonstrating a wide-band photoresponse. We have observed the band-edge transition at ∼1500 nm (∼830 meV) and high external quantum efficiency (EQE ≈ 3%) at room temperature. Laser-power-resolved and temperature-resolved photocurrent measurements reveal that the photocarrier generation and recombination are dominated by continuously distributed trap states within the band gap. To understand wavelength-resolved photocurrent, we also calculated the optical absorption properties via density functional theory. Finally, we have shown that the device has a fast photoresponse with a rise time as fast as ∼1 ms. Our study provides a fundamental understanding of the optoelectronic behavior in a complex naturally occurring vdWH, and may pave an avenue toward developing nanoscale optoelectronic devices with tailored properties.

Fast and Highly Sensitive Ionic-Polymer-Gated WS2 -Graphene Photodetectors

The combination of graphene with semiconductor materials in heterostructure photodetectors enables amplified detection of femtowatt light signals using micrometer-scale electronic devices. Presently, long-lived charge traps limit the speed of such detectors, and impractical strategies, e.g., the use of large gate-voltage pulses, have been employed to achieve bandwidths suitable for applications such as video-frame-rate imaging. Here, atomically thin graphene-WS₂ heterostructure photodetectors encapsulated in an ionic polymer are reported, which are uniquely able to operate at bandwidths up to 1.5 kHz whilst maintaining internal gain as large as 10⁶ . Highly mobile ions and the nanometer-scale Debye length of the ionic polymer are used to screen charge traps and tune the Fermi level of the graphene over an unprecedented range at the interface with WS₂ . Responsivity R = 10⁶ A W^-1 and detectivity D* = 3.8 × 10¹¹ Jones are observed, approaching that of single-photon counters. The combination of both high responsivity and fast response times makes these photodetectors suitable for video-frame-rate imaging applications.

Optical Control of Spin Polarization in Monolayer Transition Metal Dichalcogenides

Optical excitation could generate electrons' spin polarization in some semiconductors with the control of the field polarization. In this article, we report a series of spin-resolved photocurrent experiments on monolayer tungsten disulfide. The experiments demonstrate that the optical excitations with the same helicity could generate opposite spin polarization around the Fermi level by tuning the excitation energy. The mechanism lies in the valley-dependent optical selection rules, the giant spin-orbit coupling, and spin-valley locking in monolayer transition metal dichalcogenides (TMDs). These exotic features make monolayer TMDs promising candidates for conceptual semiconductor-based spintronics.

Anomalous Above-Gap Photoexcitations and Optical Signatures of Localized Charge Puddles in Monolayer Molybdenum Disulfide

Broadband optoelectronics such as artificial light harvesting technologies necessitate efficient and, ideally, tunable coupling of excited states over a wide range of energies. In monolayer MoS₂, a prototypical two-dimensional layered semiconductor, the excited state manifold spans the visible electromagnetic spectrum and is comprised of an interconnected network of excitonic and free-carrier excitations. Here, photoluminescence excitation spectroscopy is used to reveal the energetic and spatial dependence of broadband excited state coupling to the ground-state luminescent excitons of monolayer MoS₂. Photoexcitation of the direct band gap excitons is found to strengthen with increasing energy, demonstrating that interexcitonic coupling across the Brillouin zone is more efficient than previously reported, and thus bolstering the import and appeal of these materials for broadband optoelectronic applications. Narrow excitation resonances that are superimposed on the broadband photoexcitation spectrum are identified and coincide with the energetic positions of the higher-energy excitons and the electronic band gap as predicted by first-principles calculations. Identification of such features outlines a facile route to measure the optical and electronic band gaps and thus the exciton binding energy in the more sophisticated device architectures that are necessary for untangling the rich many-body phenomena and complex photophysics of these layered semiconductors. In as-grown materials, the excited states exhibit microscopic spatial variations that are characteristic of local carrier density fluctuations, similar to charge puddling phenomena in graphene. Such variations likely arise from substrate inhomogeneity and demonstrate the possibility to use substrate patterning to tune local carrier density and dynamically control excited states for designer optoelectronics.

Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures

Combining monolayers of different two-dimensional semiconductors into heterostructures creates new phenomena and device possibilities. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the properties of interlayer excitations. We determine the key unknown parameters in MoSe₂/WSe₂ heterobilayers by using rational device design and submicrometer angle-resolved photoemission spectroscopy (μ-ARPES) in combination with photoluminescence. We find that the bands in the K-point valleys are weakly hybridized, with a valence band offset of 300 meV, implying type II band alignment. We deduce that the binding energy of interlayer excitons is more than 200 meV, an order of magnitude higher than that in analogous GaAs structures. Hybridization strongly modifies the bands at Γ, but the valence band edge remains at the K points. We also find that the spectrum of a rotationally aligned heterobilayer reflects a mixture of commensurate and incommensurate domains. These results directly answer many outstanding questions about the electronic nature of MoSe₂/WSe₂ heterobilayers and demonstrate a practical approach for high spectral resolution in ARPES of device-scale structures.

Electrically tunable organic-inorganic hybrid polaritons with monolayer WS2

Exciton-polaritons are quasiparticles consisting of a linear superposition of photonic and excitonic states, offering potential for nonlinear optical devices. The excitonic component of the polariton provides a finite Coulomb scattering cross section, such that the different types of exciton found in organic materials (Frenkel) and inorganic materials (Wannier-Mott) produce polaritons with different interparticle interaction strength. A hybrid polariton state with distinct excitons provides a potential technological route towards in situ control of nonlinear behaviour. Here we demonstrate a device in which hybrid polaritons are displayed at ambient temperatures, the excitonic component of which is part Frenkel and part Wannier-Mott, and in which the dominant exciton type can be switched with an applied voltage. The device consists of an open microcavity containing both organic dye and a monolayer of the transition metal dichalcogenide WS₂. Our findings offer a perspective for electrically controlled nonlinear polariton devices at room temperature.

An anomalous interlayer exciton in MoS2

The few layer transition metal dichalcogenides are two dimensional materials that have an intrinsic gap of the order of ≈2 eV. The reduced screening in two dimensions implies a rich excitonic physics and, as a consequence, many potential applications in the field of opto-electronics. Here we report that a layer perpendicular electric field, by which the gap size in these materials can be efficiently controlled, generates an anomalous inter-layer exciton whose binding energy is independent of the gap size. We show this originates from the rich gap control and screening physics of TMDCs in a bilayer geometry: gating the bilayer acts on one hand to increase intra-layer screening by reducing the gap and, on the other hand, to decrease the inter-layer screening by field induced charge depletion. This constancy of binding energy is both a striking exception to the universal reduction in binding energy with gap size that all materials are believed to follow, as well as evidence of a degree of control over inter-layer excitons not found in their well studied intra-layer counterparts.

Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect

Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied for different thicknesses of MoTe2. The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6-1.55 μm) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 10(9) cm Hz(1/2) W(-1) for 637 nm light and 1.3 × 10(9) cm Hz(1/2) W(-1) for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.

Indirect Bandgap Puddles in Monolayer MoS2 by Substrate-Induced Local Strain

An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS₂ on a SiO₂ /Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS₂ .

Dependence of Raman and absorption spectra of stacked bilayer MoS2 on the stacking orientation

Stacked bilayer molybdenum disulfide (MoS₂) exhibits interesting physical properties depending on the stacking orientation and interlayer coupling strength. Although optical properties, such as photoluminescence, Raman, and absorption properties, are largely dependent on the interlayer coupling of stacked bilayer MoS₂, the origin of variations in these properties is not clearly understood. We performed comprehensive confocal Raman and absorption mapping measurements to determine the dependence of these spectra on the stacking orientation of bilayer MoS₂. The results indicated that with 532-nm laser excitation, the Raman scattering intensity gradually increased upon increasing the stacking angle from 0° to 60°, whereas 458-nm laser excitation resulted in the opposite trend of decreasing Raman intensity with increasing stacking angle. This opposite behavior of the Raman intensity dependence was explained by the varying resonance condition between the Raman excitation wavelength and C exciton absorption energy of bilayer MoS₂. Our work sheds light on the intriguing effect of the subtle interlayer interaction in stacked MoS₂ bilayers on the resulting optical properties.

Strong dichroic emission in the pseudo one dimensional material ZrS3

Zirconium trisulphide (ZrS₃), a member of the layered transition metal trichalcogenides (TMTCs) family, has been studied by angle-resolved photoluminescence spectroscopy (ARPLS). The synthesized ZrS₃ layers possess a pseudo one-dimensional nature where each layer consists of ZrS₃ chains extending along the b-lattice direction. Our results show that the optical properties of few-layered ZrS₃ are highly anisotropic as evidenced by large PL intensity variation with the polarization direction. Light is efficiently absorbed when the E-field is polarized along the chain (b-axis), but the field is greatly attenuated and absorption is reduced when it is polarized vertical to the 1D-like chains as the wavelength of the exciting light is much longer than the width of each 1D chain. The observed PL variation with polarization is similar to that of conventional 1D materials, i.e., nanowires, and nanotubes, except for the fact that here the 1D chains interact with each other giving rise to a unique linear dichroism response that falls between the 2D (planar) and 1D (chain) limit. These results not only mark the very first demonstration of PL polarization anisotropy in 2D systems, but also provide novel insight into how the interaction between adjacent 1D-like chains and the 2D nature of each layer influences the overall optical anisotropy of pseudo-1D materials. Results are anticipated to have an impact on optical technologies such as polarized detectors, near-field imaging, communication systems, and bio-applications relying on the generation and detection of polarized light.

Trion fine structure and coupled spin-valley dynamics in monolayer tungsten disulfide

Monolayer transition-metal dichalcogenides have recently emerged as possible candidates for valleytronic applications, as the spin and valley pseudospin are directly coupled and stabilized by a large spin splitting. The optical properties of these two-dimensional crystals are dominated by tightly bound electron-hole pairs (excitons) and more complex quasiparticles such as charged excitons (trions). Here we investigate monolayer WS2 samples via photoluminescence and time-resolved Kerr rotation. In photoluminescence and in energy-dependent Kerr rotation measurements, we are able to resolve two different trion states, which we interpret as intravalley and intervalley trions. Using time-resolved Kerr rotation, we observe a rapid initial valley polarization decay for the A exciton and the trion states. Subsequently, we observe a crossover towards exciton-exciton interaction-related dynamics, consistent with the formation and decay of optically dark A excitons. By contrast, resonant excitation of the B exciton transition leads to a very slow decay of the Kerr signal.

The symmetry-resolved electronic structure of 2H-WSe2(0 0 0 1)

The orbital symmetry of the band structure of 2H-WSe2(0 0 0 1) has been investigated by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The WSe2(0 0 0 1) experimental band structure is found, by ARPES, to be significantly different for states of even and odd reflection parities along both the [Formula: see text]-[Formula: see text] and [Formula: see text]-[Formula: see text] lines, in good agreement with results obtained from DFT. The light polarization dependence of the photoemission intensities from the top of the valence band for bulk WSe2(0 0 0 1) is explained by the dominance of W 5[Formula: see text] states around the [Formula: see text]-point and W 5d xy states around the [Formula: see text]-point, thus dominated, respectively, by states of even and odd symmetry, with respect to the [Formula: see text]-[Formula: see text] line. The splitting of the topmost valence band at [Formula: see text], due to spin-orbit coupling, is measured to be 0.49  ±  0.01 eV, in agreement with the 0.48 eV value from DFT, and prior measurements for the bulk single crystal WSe2(0 0 0 1), albeit slightly smaller than the 0.513  ±  0.01 eV observed for monolayer WSe2.

Davydov Splitting and Excitonic Resonance Effects in Raman Spectra of Few-Layer MoSe2

Raman spectra of few-layer MoSe2 were measured with eight excitation energies. New peaks that appear only near resonance with various exciton states are analyzed, and the modes are assigned. The resonance profiles of the Raman peaks reflect the joint density of states for optical transitions, but the symmetry of the exciton wave functions leads to selective enhancement of the A1g mode at the A exciton energy and the shear mode at the C exciton energy. We also find Davydov splitting of intralayer A1g, E1g, and A2u modes due to interlayer interaction for some excitation energies near resonances. Furthermore, by fitting the spectral positions of interlayer shear and breathing modes and Davydov splitting of intralayer modes to a linear chain model, we extract the strength of the interlayer interaction. We find that the second-nearest-neighbor interlayer interaction amounts to about 30% of the nearest-neighbor interaction for both in-plane and out-of-plane vibrations.

Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors

The large-scale synthesis of atomically thin, layered MoS2/graphene heterostructures is of great interest in optoelectronic devices because of their unique properties. Herein, we present a scalable synthesis method to prepare centimeter-scale, continuous, and uniform films of bilayer MoS2 using low-pressure chemical vapor deposition. This growth process was utilized to assemble a heterostructure by growing large-scale uniform films of bilayer MoS2 on graphene (G-MoS2/graphene). Atomic force microscopy, Raman spectra, and transmission electron microscopy characterization demonstrated that the large-scale bilayer MoS2 film on graphene exhibited good thickness uniformity and a polycrystalline nature. A centimeter-scale phototransistor prepared using the G-MoS2/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS2 on graphene (2.5 mA/W). This feature results from efficient charge transfer at the interface enabled by intimate contact between the grown bilayer MoS2 (G-MoS2) and graphene. The ability to integrate multilayer materials into atomically thin heterostructures paves the way for fabricating multifunctional devices by controlling their layer structure.

Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals

The atomic-layered semiconducting materials of transition metal dichalcogenides are considered effective light sources with both potential applications in thin and flexible optoelectronics and novel functionalities. In spite of the great interest in optoelectronic properties of two-dimensional transition metal dichalcogenides, the excitonic properties still need to be addressed, specifically in terms of the interlayer interactions. Here, we report the distinct behavior of the A and B excitons in the presence of interlayer interactions of layered MoS2 crystals. Micro-photoluminescence spectroscopic studies reveal that on the interlayer interactions in double layer MoS2 crystals, the emission quantum yield of the A exciton is drastically changed, whereas that of the B exciton remains nearly constant for both single and double layer MoS2 crystals. First-principles density functional theory calculations confirm that a significant charge redistribution occurs in the double layer MoS2 due to the interlayer interactions producing a local electric field at the interfacial region. Analogous to the quantum-confined Stark effect, we suggest that the distinct behavior of the A and B excitons can be explained by a simplified band-bending model.