Scanning tunneling microscopy investigations of unoccupied surface states in two-dimensional semiconducting β-√3 × √3-Bi/Si(111) surface

One-dimensional molecular nanostructures interacting with two-dimensional metals

Electrons confined within the 2D layer of metals grown on silicon substrates exhibit exotic properties due to strong correlation effects. Their properties, such as their 2D superconductivity, have been frequently subjected to possible tuning by doping using charge transfer from adsorbed layers. Doping relies on adding electrons or holes to the system and the resulting shift of the Fermi level EF in the otherwise robust surface electronic structure. This strategy has not been sufficiently controlled in the case of an indium double layer grown on the Si(111) surface. This study provides an alternative approach relying on spatially periodic modification of the surface electronic structure of the 2D metal. Derivatives of diketopyrrolopyrroles (DPP) are used for the growth of perfectly ordered 1D-like molecular superstructures on top of the In double layer, imaged by scanning tunneling microscopy. The integral changes of electronic structure are measured by angle-resolved photoelectron spectroscopy and density functional theory calculations show local modification of the surface states near EF by the adsorbed molecules. This study demonstrates that the surface electronic states can be controllably patterned, using a proper bonding scheme. It is anticipated that the combination of the original 2D superconductor and the 1D-like patterning will motivate further research.

In-gap states and strain-tuned band convergence in layered structure trivalent iridate K0.75Na0.25IrO2

Iridium oxides (iridates) provide a good platform to study the delicate interplay between spin-orbit coupling (SOC) interactions, electron correlation effects, Hund's coupling and lattice degrees of freedom. An overwhelming number of investigations primarily focus on tetravalent (Ir⁴⁺, 5d⁵) and pentavalent (Ir⁵⁺, 5d⁴) iridates, and far less attention has been paid to iridates with other valence states. Here, we pay our attention to a less-explored trivalent (Ir³⁺, 5d⁶) iridate, K_0.75Na_0.25IrO₂, crystallizing in a triangular lattice with edge-sharing IrO₆ octahedra and alkali metal ion intercalated [IrO₂]^- layers, offering a good platform to explore the interplay between different degrees of freedom. We theoretically determine the preferred occupied positions of the alkali metal ions from energetic viewpoints and reproduce the experimentally observed semiconducting behavior and nonmagnetic (NM) properties of K_0.75Na_0.25IrO₂. The SOC interactions play a critical role in the band dispersion, resulting in NM J_eff = 0 states. More intriguingly, our electronic structure not only uncovers the presence of intrinsic in-gap states and nearly free electron character for the conduction band minimum, but also explains the abnormally low activation energy in K_0.75Na_0.25IrO₂. Particularly, the band edge can be effectively modulated by mechanical strain, and the in-gap states feature enhanced band-convergence characteristics by 6% compressive strain, which will greatly enhance the electrical conductivity of K_0.75Na_0.25IrO₂. The present work sheds new light on the unconventional electronic structures of trivalent iridates, indicating their promising application as a nanoelectronic and thermoelectric material, which will attract extensive interest and stimulate experimental works to further understand the unprecedented electronic structures and exploit potential applications of the triangular trivalent iridate.

Nearly Ideal Two-Dimensional Electron Gas Hosted by Multiple Quantized Kronig-Penney States Observed in Few-Layer InSe

A theoretical ideal two-dimensional electron gas (2DEG) was characterized by a flat density of states independent of energy. Compared with conventional two-dimensional free-electron systems in semiconductor heterojunctions and noble metal surfaces, we report here the achievement of ideal 2DEG with multiple quantized states in few-layer InSe films. The multiple quantum well states (QWSs) in few-layer InSe films are found, and the number of QWSs is strictly equal to the number of atomic layers. The multiple stair-like DOS as well as multiple bands with parabolic dispersion both characterize ideal 2DEG features in these QWSs. Density functional theory calculations and numerical simulations based on quasi-bounded square potential wells described as the Kronig-Penney model provide a consistent explanation of 2DEG in the QWSs. Our work demonstrates that 2D van der Waals materials are ideal systems for realizing 2DEG hosted by multiple quantized Kronig-Penney states, and the semiconducting nature of the material provides a better chance for construction of high-performance electronic devices utilizing these states, for example, superlattice devices with negative differential resistance.

Phase Transformation-Induced Quantum Dot States on the Bi/Si(111) Surface

Nanopatterns at near atomic dimensions with controllable quantum dot states (QDSs) are promising candidates for the continued downscaling of electronic devices. Herein, we report a phase transition-induced QD system achieved on the √3 × √3-Bi/Si(111) surface reconstruction, which points the way to a novel strategy on QDS implementation. Combining scanning tunneling microscopy, scanning tunneling spectroscopy, and density functional theory (DFT) calculations, the structure, energy dispersion, and size effect on band gap of the QDs are measured and verified. As-created QDs can be manipulated with a dot size down to 2 nm via Bi phase transformation, which, in turn, is triggered by thermal annealing at 700 K. The transition mechanism is also supported by our DFT calculations, and an empirical analytical model is developed to predict the transformation kinetics.