Dielectric Polymer Property Prediction Using Recurrent Neural Networks with Optimizations

Despite the growing success of machine learning for predicting structure-property relationships in molecules and materials, such as predicting the dielectric properties of polymers, it is still in its infancy. We report on the effectiveness of solving structure-property relationships for a computer-generated database of dielectric polymers using recurrent neural network (RNN) models. The implementation of a series of optimization strategies was crucial to achieving high learning speeds and sufficient accuracy: (1) binary and nonbinary representations of SMILES (Simplified Molecular Input Line System) fingerprints and (2) backpropagation with affine transformation of the input sequence (ATransformedBP) and resilient backpropagation with initial weight update parameter optimizations (iRPROP^- optimized). For the investigated database of polymers, the binary SMILES representation was found to be superior to the decimal representation with respect to the training and prediction performance. All developed and optimized Elman-type RNN algorithms outperformed nonoptimized RNN models in the efficient prediction of nonlinear structure-activity relationships. The average relative standard deviation (RSD) remained well below 5%, and the maximum RSD did not exceed 30%. Moreover, we provide a C++ codebase as a testbed for a new generation of open programming languages that target increasingly diverse computer architectures.

Sulfurization of MoO3 in the Chemical Vapor Deposition Synthesis of MoS2 Enhanced by an H2S/H2 Mixture

The typical layered transition metal dichalcogenide (TMDC) material, MoS₂, is considered a promising candidate for the next-generation electronic device due to its exceptional physical and chemical properties. In chemical vapor deposition synthesis, the sulfurization of MoO₃ powders is an essential reaction step in which the MoO₃ reactants are converted into MoS₂ products. Recent studies have suggested using an H₂S/H₂ mixture to reduce MoO₃ powders in an effective way. However, reaction mechanisms associated with the sulfurization of MoO₃ by the H₂S/H₂ mixture are yet to be fully understood. Here, we perform quantum molecular dynamics (QMD) simulations to investigate the sulfurization of MoO₃ flakes using two different gaseous environments: pure H₂S precursors and a H₂S/H₂ mixture. Our QMD results reveal that the H₂S/H₂ mixture could effectively reduce and sulfurize the MoO₃ reactants through additional reactions of H₂ and MoO₃, thereby providing valuable input for experimental synthesis of higher-quality TMDC materials.

Lattice thermal transport in two-dimensional alloys and fractal heterostructures

Engineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of [Formula: see text] monolayer crystals including [Formula: see text] alloys with substitutional point defects, periodic [Formula: see text] heterostructures with characteristic length scales and scale-free fractal [Formula: see text] heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.

Carrier-specific dynamics in 2H-MoTe2 observed by femtosecond soft x-ray absorption spectroscopy using an x-ray free-electron laser

Femtosecond carrier dynamics in layered 2H-MoTe2 semiconductor crystals have been investigated using soft x-ray transient absorption spectroscopy at the x-ray free-electron laser (XFEL) of the Pohang Accelerator Laboratory. Following above-bandgap optical excitation of 2H-MoTe2, the photoexcited hole distribution is directly probed via short-lived transitions from the Te 3d 5/2 core level (M5-edge, 572-577 eV) to transiently unoccupied states in the valence band. The optically excited electrons are separately probed via the reduced absorption probability at the Te M5-edge involving partially occupied states of the conduction band. A 400 ± 110 fs delay is observed between this transient electron signal near the conduction band minimum compared to higher-lying states within the conduction band, which we assign to hot electron relaxation. Additionally, the transient absorption signals below and above the Te M5 edge, assigned to photoexcited holes and electrons, respectively, are observed to decay concomitantly on a 1-2 ps timescale, which is interpreted as electron-hole recombination. The present work provides a benchmark for applications of XFELs for soft x-ray absorption studies of carrier-specific dynamics in semiconductors, and future opportunities enabled by this method are discussed.

Growth Kinetics and Atomistic Mechanisms of Native Oxidation of ZrSxSe2-x and MoS2 Crystals

A thorough understanding of native oxides is essential for designing semiconductor devices. Here, we report a study of the rate and mechanisms of spontaneous oxidation of bulk single crystals of ZrS_xSe_2-x alloys and MoS₂. ZrS_xSe_2-x alloys oxidize rapidly, and the oxidation rate increases with Se content. Oxidation of basal surfaces is initiated by favorable O₂ adsorption and proceeds by a mechanism of Zr-O bond switching, that collapses the van der Waals gaps, and is facilitated by progressive redox transitions of the chalcogen. The rate-limiting process is the formation and out-diffusion of SO₂. In contrast, MoS₂ basal surfaces are stable due to unfavorable oxygen adsorption. Our results provide insight and quantitative guidance for designing and processing semiconductor devices based on ZrS_xSe_2-x and MoS₂ and identify the atomistic-scale mechanisms of bonding and phase transformations in layered materials with competing anions.

Photoexcitation Induced Ultrafast Nonthermal Amorphization in Sb2Te3

Phase-change materials are of great interest for low-power high-throughput storage devices in next-generation neuromorphic computing technologies. Their operation is based on the contrasting properties of their amorphous and crystalline phases, which can be switched on the nanosecond time scale. Among the archetypal phase change materials based on Ge-Sb-Te alloys, Sb₂Te₃ displays a fast and energy-efficient crystallization-amorphization cycle due to its growth-dominated crystallization and low melting point. This growth-dominated crystallization contrasts with the nucleation-dominated crystallization of Ge₂Sb₂Te₅. Here, we show that the energy required for and the time associated with the amorphization process can be further reduced by using a photoexcitation-based nonthermal path. We employ nonadiabatic quantum molecular dynamics simulations to investigate the time evolution of Sb₂Te₃ with 2.6, 5.2, 7.5, 10.3, and 12.5% photoexcited valence electron-hole carriers. Results reveal that the degree of amorphization increases with excitation, saturating at 10.3% excitation. The rapid amorphization originates from an instantaneous charge transfer from Te-p orbitals to Sb-p orbitals upon photoexcitation. Subsequent evolution of the excited state, within the picosecond time scale, indicates an Sb-Te bonding to antibonding transition. Concurrently, Sb-Sb and Te-Te antibonding decreases, leading to formation of wrong bonds. For photoexcitation of 7.5% valence electrons or larger, the electronic changes destabilize the crystal structure, leading to large atomic diffusion and irreversible loss of long-range order. These results highlight an ultrafast energy-efficient amorphization pathway that could be used to enhance the performance of phase change material-based optoelectronic devices.

Simultaneous Observation of Carrier-Specific Redistribution and Coherent Lattice Dynamics in 2H-MoTe2 with Femtosecond Core-Level Spectroscopy

We employ few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy to reveal simultaneously the intra- and interband carrier relaxation and the light-induced structural dynamics in nanoscale thin films of layered 2H-MoTe₂ semiconductor. By interrogating the valence electronic structure via localized Te 4d (39-46 eV) and Mo 4p (35-38 eV) core levels, the relaxation of the photoexcited hole distribution is directly observed in real time. We obtain hole thermalization and cooling times of 15 ± 5 fs and 380 ± 90 fs, respectively, and an electron-hole recombination time of 1.5 ± 0.1 ps. Furthermore, excitations of coherent out-of-plane A_1g (5.1 THz) and in-plane E_1g (3.7 THz) lattice vibrations are visualized through oscillations in the XUV absorption spectra. By comparison to Bethe-Salpeter equation simulations, the spectral changes are mapped to real-space excited-state displacements of the lattice along the dominant A_1g coordinate. By directly and simultaneously probing the excited carrier distribution dynamics and accompanying femtosecond lattice displacement in 2H-MoTe₂ within a single experiment, our work provides a benchmark for understanding the interplay between electronic and structural dynamics in photoexcited nanomaterials.

Optically Induced Three-Stage Picosecond Amorphization in Low-Temperature SrTiO3

Photoexcitation can drastically modify potential energy surfaces of materials, allowing access to hidden phases. SrTiO₃ (STO) is an ideal material for photoexcitation studies due to its prevalent use in nanostructured devices and its rich range of functionality-changing lattice motions. Recently, a hidden ferroelectric phase in STO was accessed through weak terahertz excitation of polarization-inducing phonon modes. In contrast, whereas strong laser excitation was shown to induce nanostructures on STO surfaces and control nanopolarization patterns in STO-based heterostructures, the dynamic pathways underlying these optically induced structural changes remain unknown. Here nonadiabatic quantum molecular dynamics reveals picosecond amorphization in photoexcited STO at temperatures as low as 10 K. The three-stage pathway involves photoinduced charge transfer and optical phonon activation followed by nonlinear charge and lattice dynamics that ultimately lead to amorphization. This atomistic understanding could guide not only rational laser nanostructuring of STO but also broader "quantum materials on demand" technologies.

Atomistic Simulations of Biofouling and Molecular Transfer of a Cross-linked Aromatic Polyamide Membrane for Desalination

Reverse osmosis through a polyamide (PA) membrane is an important technique for water desalination and purification. In this study, molecular dynamics simulations were performed to study the biofouling mechanism (i.e., protein adsorption) and nonequilibrium steady-state water transfer of a cross-linked PA membrane. Our results demonstrated that the PA membrane surface's roughness is a key factor of surface's biofouling, as the lysozyme protein adsorbed on the surface's cavity site displays extremely low surface diffusivity, blocking water passage, and decreasing water flux. The adsorbed protein undergoes secondary structural changes, particularly in the pressure-driven flowing conditions, leading to strong protein-surface interactions. Our simulations were able to present water permeation close to the experimental conditions with a pressure difference as low as 5 MPa, while all the electrolytes, which are tightly surrounded by hydration water, were effectively rejected at the membrane surfaces. The analysis of the self-intermediate scattering function demonstrates that the dynamics of water molecules coordinated with hydrogen bonds is faster inside the pores than during the translation across the pores. The pressure difference applied shows a negligible effect on the water structure and content inside the membrane but facilitates the transportation of hydrogen-bonded water molecules through the membrane's sub-nanopores with a reduced coordination number. The linear relationship between the water flux and the pressure difference demonstrates the applicability of continuum hydrodynamic principles and thus the stability of the membrane structure.

Application of First-Principles-Based Artificial Neural Network Potentials to Multiscale-Shock Dynamics Simulations on Solid Materials

The use of artificial neural network (ANN) potentials trained with first-principles calculations has emerged as a promising approach for molecular dynamics (MD) simulations encompassing large space and time scales while retaining first-principles accuracy. To date, however, the application of ANN-MD has been limited to near-equilibrium processes. Here we combine first-principles-trained ANN-MD with multiscale shock theory (MSST) to successfully describe far-from-equilibrium shock phenomena. Our ANN-MSST-MD approach describes shock-wave propagation in solids with first-principles accuracy but a 5000 times shorter computing time. Accordingly, ANN-MD-MSST was able to resolve fine, long-time elastic deformation at low shock speed, which was impossible with first-principles MD because of the high computational cost. This work thus lays a foundation of ANN-MD simulation to study a wide range of far-from-equilibrium processes.

Synergistically Chemical and Thermal Coupling between Graphene Oxide and Graphene Fluoride for Enhancing Aluminum Combustion

Metal combustion reaction is highly exothermic and is used in energetic applications, such as propulsion, pyrotechnics, powering micro- and nano-devices, and nanomaterials synthesis. Aluminum (Al) is attracting great interest in those applications because of its high energy density, earth abundance, and low toxicity. Nevertheless, Al combustion is hard to initiate and progresses slowly and incompletely. On the other hand, ultrathin carbon nanomaterials, such as graphene, graphene oxide (GO), and graphene fluoride (GF), can also undergo exothermic reactions. Herein, we demonstrate that the mixture of GO and GF significantly improves the performance of Al combustion as interactions between GO and GF provide heat and radicals to accelerate Al oxidation. Our experiments and reactive molecular dynamics simulation reveal that GO and GF have strong chemical and thermal couplings through radical reactions and heat released from their oxidation reactions. GO facilitates the dissociation of GF, and GF accelerates the disproportionation and oxidation of GO. When the mixture of GO and GF is added to micron-sized Al particles, their synergistic couplings generate reactive oxidative species, such as CF_x and CF_xO_y, and heat, which greatly accelerates Al combustion. This work demonstrates a new area of using synergistic couplings between ultrathin carbon nanomaterials to accelerate metal combustion and potentially oxidation reactions of other materials.

Tellurene Photodetector with High Gain and Wide Bandwidth

Two-dimensional (2D) semiconductors have been extensively explored as a new class of materials with great potential. In particular, black phosphorus (BP) has been considered to be a strong candidate for applications such as high-performance infrared photodetectors. However, the scalability of BP thin film is still a challenge, and its poor stability in the air has hampered the progress of the commercialization of BP devices. Herein, we report the use of hydrothermal-synthesized and air-stable 2D tellurene nanoflakes for broadband and ultrasensitive photodetection. The tellurene nanoflakes show high hole mobilities up to 458 cm²/V·s at ambient conditions, and the tellurene photodetector presents peak extrinsic responsivity of 383 A/W, 19.2 mA/W, and 18.9 mA/W at 520 nm, 1.55 μm, and 3.39 μm light wavelength, respectively. Because of the photogating effect, high gains up to 1.9 × 10³ and 3.15 × 10⁴ are obtained at 520 nm and 3.39 μm wavelength, respectively. At the communication wavelength of 1.55 μm, the tellurene photodetector exhibits an exceptionally high anisotropic behavior, and a large bandwidth of 37 MHz is obtained. The photodetection performance at different wavelength is further supported by the corresponding quantum molecular dynamics (QMD) simulations. Our approach has demonstrated the air-stable tellurene photodetectors that fully cover the short-wave infrared band with ultrafast photoresponse.

Field-Induced Carrier Localization Transition in Dielectric Polymers

Organic polymers offer many advantages as dielectric materials over their inorganic counterparts because of high flexibility and cost-effective processing, but their application is severely limited by breakdown in the presence of high electric fields. Dielectric breakdown is commonly understood as the result of avalanche processes such as carrier multiplication and defect generation that are triggered by field-accelerated hot carriers (electrons or holes). In stark contrast to inorganic dielectric materials, however, there remains no mechanistic understanding to enable quantitative prediction of the breakdown field in polymers. Here, we perform systematic study of different electric fields on hot carrier dynamics and resulting chemical damage in a slab of archetypal polymer, polyethylene, using nonadiabatic quantum molecular dynamics simulations. We found that high electric fields induce localized electronic states at the slab surface, with a critical transition occurring near the experimentally reported intrinsic breakdown field. This transition in turn facilitates strong polaronic coupling between charge carriers and atoms, which is manifested by severe damping of the time evolution of localized states and the presence of C-H vibrational resonance in the hot-carrier motion leading to rapid carbon-carbon bond breaking on the surface. Such polaronic localization transition may provide a critically missing prediction method for computationally screening dielectric polymers with high breakdown fields.

Electrostrictive Cavitation in Water Induced by a SnO2 Nanoparticle

Cavitation phenomenon in dielectric fluids has been a recent topic of interest in theory and experiment. We study a dielectric fluid-nanoparticle system subjected to an external electric field using molecular dynamics simulations. Electric fields ranging from 0.042 to 0.25 V/Å are applied to a water and tin dioxide system. Cavitation is observed in simulations with both SPC/E water and the hydrogen bonding polarizable model. The cavitation onset time displays a stretched exponential relaxation response with respect to the applied electric field with an exponent β = 0.423 ± 0.08. This is in accordance with the exact theoretical value for systems with long-ranged forces. Cavity growth rates are divided into two phases, a spherical growth phase and a cylindrical one. Both are reported as a function of the applied electric field. The structure of the electric field is analyzed both spatially and temporally.

Hydrogen Bond Preserving Stress Release Mechanism Is Key to the Resilience of Aramid Fibers

Ab initio molecular dynamics simulations of shock loading on poly(p-phenylene terephthalamide) (PPTA) reveal stress release mechanisms based on hydrogen bond preserving structural phase transformation (SPT) and planar amorphization. The SPT is triggered by [100] shock-induced coplanarity of phenylene groups and rearrangement of sheet stacking leading to a novel monoclinic phase. Planar amorphization is generated by [010] shock-induced scission of hydrogen bonds leading to disruption of polymer sheets, and trans-to-cis conformational change of polymer chains. In contrast to the latter, the former mechanism preserves the hydrogen bonding and cohesiveness of polymer chains in the identified novel crystalline phase preserving the strength of PPTA. The interplay between hydrogen bond preserving (SPT) and nonpreserving (planar amorphization) shock release mechanisms is critical to understanding the shock performance of aramid fibers.

Guidelines for creating artificial neural network empirical interatomic potential from first-principles molecular dynamics data under specific conditions and its application to α-Ag2Se

First-principles molecular dynamics (FPMD) simulations are highly accurate, but due to their high calculation cost, the computational scale is often limited to hundreds of atoms and few picoseconds under specific temperature and pressure conditions. We present here the guidelines for creating artificial neural network empirical interatomic potential (ANN potential) trained with such a limited FPMD data, which can perform long time scale MD simulations at least under the same conditions. The FPMD data for training are prepared on the basis of the convergence of radial distribution function [g(r)]. While training the ANN using total energy and atomic forces of the FPMD data, the error of pressure is also monitored and minimized. To create further robust potential, we add a small amount of FPMD data to reproduce the interaction between two atoms that are close to each other. ANN potentials for α-Ag₂Se were created as an application example, and it has been confirmed that not only g(r) and mean square displacements but also the specific heat requiring a long time scale simulation matched the FPMD and the experimental values. In addition, the MD simulation using the ANN potential achieved over 10⁴ acceleration over the FPMD one. The guidelines proposed here mitigate the creation difficulty of the ANN potential, and a lot of FPMD data sleeping on the hard disk after the research may be put on the front stage again.

Phonon-Suppressed Auger Scattering of Charge Carriers in Defective Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional transition metal dichalcogenides (TMDs) draw strong interest in materials science, with applications in optoelectronics and many other fields. Good performance requires high carrier concentrations and long lifetimes. However, high concentrations accelerate energy exchange between charged particles by Auger-type processes, especially in TMDs where many-body interactions are strong, thus facilitating carrier trapping. We report time-resolved optical pump-THz probe measurements of carrier lifetimes as a function of carrier density. Surprisingly, the lifetime reduction with increased density is very weak. It decreases only by 20% when we increase the pump fluence 100 times. This unexpected feature of the Auger process is rationalized by our time-domain ab initio simulations. The simulations show that phonon-driven trapping competes successfully with the Auger process. On the one hand, trap states are relatively close to band edges, and phonons accommodate efficiently the electronic energy during the trapping. On the other hand, trap states localize around defects, and the overlap of trapped and free carriers is small, decreasing carrier-carrier interactions. At low carrier densities, phonons provide the main charge trapping mechanism, decreasing carrier lifetimes compared to defect-free samples. At high carrier densities, phonons suppress Auger processes and lower the dependence of the trapping rate on carrier density. Our results provide theoretical insights into the diverse roles played by phonons and Auger processes in TMDs and generate guidelines for defect engineering to improve device performance at high carrier densities.

Two-Dimensional Lateral Epitaxy of 2H (MoSe2)-1T' (ReSe2) Phases

Two-dimensional (2D) transition metal dichalcogenide (TMDC) heterostructures have been proposed as potential candidates for a variety of applications like quantum computing, neuromorphic computing, solar cells, and flexible field effective transistors. The 2D TMDC heterostructures at the present stage face difficulties being implemented in these applications because of lack of large and sharp heterostructure interfaces. Herein, we address this problem via a CVD technique to grow thermodynamically stable heterostructure of 2H/1T' MoSe₂-ReSe₂ using conventional transition metal phase diagrams as a reference. We demonstrate how the thermodynamics of mixing in the MoReSe₂ system during CVD growth dictates the formation of atomically sharp interfaces between MoSe₂ and ReSe₂, which can be confirmed by high-resolution scanning transmission electron microscopy imaging, revealing zigzag selenium-terminated interface between the epitaxial 2H and 1T' lattices. Our work provides useful insights for understanding the stability of 2D heterostructures and interfaces between chemically, structurally, and electronically different phases.

Optical Control of Non-Equilibrium Phonon Dynamics

The light-induced selective population of short-lived far-from-equilibrium vibration modes is a promising approach for controlling ultrafast and irreversible structural changes in functional nanomaterials. However, this requires a detailed understanding of the dynamics and evolution of these phonon modes and their coupling to the excited-state electronic structure. Here, we combine femtosecond mega-electronvolt electron diffraction experiments on a prototypical layered material, MoTe₂, with non-adiabatic quantum molecular dynamics simulations and ab initio electronic structure calculations to show how non-radiative energy relaxation pathways for excited electrons can be tuned by controlling the optical excitation energy. We show how the dominant intravalley and intervalley scattering mechanisms for hot and band-edge electrons leads to markedly different transient phonon populations evident in electron diffraction patterns. This understanding of how tuning optical excitations affect phonon populations and atomic motion is critical for efficiently controlling light-induced structural transitions of optoelectronic devices.

Hot-Carrier Dynamics and Chemistry in Dielectric Polymers

Dielectric polymers are widely used in electronics and energy technologies, but their performance is severely limited by the electrical breakdown under a high electric field. Dielectric breakdown is commonly understood as an avalanche of processes such as carrier multiplication and defect generation that are triggered by field-accelerated hot electrons and holes. However, how these processes are initiated remains elusive. Here, nonadiabatic quantum molecular dynamics simulations reveal microscopic processes induced by hot electrons and holes in a slab of an archetypal dielectric polymer, polyethylene, under an electric field of 600 MV/m. We found that electronic-excitation energy is rapidly dissipated within tens of femtoseconds because of strong electron-phonon scattering, which is consistent with quantum-mechanical perturbation calculations. This in turn excites other electron-hole pairs to cause carrier multiplication. We also found that the key to chemical damage is localization of holes that travel to a slab surface and weaken carbon-carbon bonds on the surface. Such quantitative information can be incorporated into first-principles-informed, predictive modeling of dielectric breakdown.

Nanoindentation on Monolayer MoS2 Kirigami

Mechanical properties of materials can be altered significantly by the ancient art of kirigami. We study the mechanical properties of atomically thin kirigami membranes of MoS₂ using molecular dynamics simulations. Nanoindentation simulations are performed to study the mechanical response of rectangular and hexagonal kirigami structures. Dramatic changes are observed in the ductility of monolayer kirigami MoS₂ compared with those of a pristine MoS₂ monolayer. Load-displacement curves of kirigami structures exhibit negligible hysteresis, and kirigami structures display remarkable elastic recovery upon unloading. Defects formed at the edges and corners of kirigami structures play an important role in the mechanical response of the membranes.

Defect Healing in Layered Materials: A Machine Learning-Assisted Characterization of MoS2 Crystal Phases

Monolayer MoS₂ is an outstanding candidate for a next-generation semiconducting material because of its exceptional physical, chemical, and mechanical properties. To make this promising layered material applicable to nanostructured electronic applications, synthesis of a highly crystalline MoS₂ monolayer is vitally important. Among different types of synthesis methods, chemical vapor deposition (CVD) is the most practical way to synthesize few- or mono-layer MoS₂ on the target substrate owing to its simplicity and scalability. However, synthesis of a highly crystalline MoS₂ layer remains elusive. This is because of the number of grains and defects unavoidably generated during CVD synthesis. Here, we perform multimillion-atom reactive molecular dynamics (RMD) simulations to identify an origin of the grain growth, migration, and defect healing process on a CVD-grown MoS₂ monolayer. RMD results reveal that grain boundaries could be successfully repaired by multiple heat treatments. Our work proposes a new way of controlling the grain growth and migration on a CVD-grown MoS₂ monolayer.

Rapid and reversible lithiation of doped biogenous iron oxide nanoparticles

Certain bacteria produce iron oxide material assembled with nanoparticles (NPs) that are doped with silicon (Fe:Si ~ 3:1) in ambient environment. Such biogenous iron oxides (BIOX) proved to be an excellent electrode material for lithium-ion batteries, but underlying atomistic mechanisms remain elusive. Here, quantum molecular dynamics simulations, combined with biomimetic synthesis and characterization, show rapid charging and discharging of NP within 100 fs, with associated surface lithiation and delithiation, respectively. The rapid electric response of NP is due to the large fraction of surface atoms. Furthermore, this study reveals an essential role of Si-doping, which reduces the strength of Li-O bonds, thereby achieving more gentle and reversible lithiation culminating in enhanced cyclability of batteries. Combined with recent developments in bio-doping technologies, such fundamental understanding may lead to energy-efficient and environment-friendly synthesis of a wide variety of doped BIOX materials with customized properties.