Dual-wavelength luminescent fibers receiver for wide field-of-view, Gb/s underwater optical wireless communication

Extending the field-of-view (FoV) of underwater wireless optical communication (UWOC) receivers can significantly ease the need for active positioning and tracking mechanisms. Two bundle of scintillating fibers emitting at 430- and 488-nm were used to detect two independent signals from ultraviolet and visible laser sources. A zero-forcing approach to minimize inter-channel crosstalk was further implemented. A net aggregated UWOC data rate of 1 Gb/s was achieved using two wavelengths and a non-return-to-zero on-off keying scheme.

Wide-field-of-view optical detectors using fused fiber-optic tapers

Photodetectors used in wireless applications suffer from a trade-off between their response speeds and their active areas, which limits the received signal-to-noise ratio (SNR). Conventional light-focusing elements used to improve the SNR narrow the field of view (FOV). Herein, we demonstrate a versatile imaging light-focusing element featuring a wide FOV and high optical gain using fused fiber-optic tapers. To verify the practicality of the proposed design, we demonstrated and tested a wide-FOV optical detector for optical wireless communication that can be used for wavelengths ranging from the visible-light band to the near infrared. The proposed detector offers improvements over luminescent wide-FOV detectors, including higher efficiency, a broader modulation bandwidth, and indefinite stability.

Engineering Band-Type Alignment in CsPbBr3 Perovskite-Based Artificial Multiple Quantum Wells

Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites-the leading class of emerging semiconductors-building a variety of bandgap alignments (i.e., band-types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite-based MQWs using 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole), tris-(8-hydroxyquinoline)aluminum, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline as quantum barrier materials are introduced. The structures of three different five-stacked perovskite-based MQWs each exhibiting a different band offset with CsPbBr₃ in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type-I or type-II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type-I and type-II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type-II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide-perovskite-based quantum devices by bandgap engineering using simple quantum barrier considerations.

Toward Large-Scale Ga2O3 Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers

Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional scale-down for high voltage power devices and deep ultraviolet optoelectronics at a fraction of the bulk-device cost. Here, we report on a large-area β-Ga₂O₃ nanomembrane spontaneous-exfoliation (1 cm × 1 cm) from layers of compressive-strained epitaxial graphene (EG) grown on SiC, and demonstrated high-responsivity flexible solar-blind photodetectors. The EG was favorably influenced by lattice arrangement of SiC, and thus enabled β-Ga₂O₃ direct-epitaxy on the EG. The β-Ga₂O₃ layer was spontaneously exfoliated at the interface of GR owing to its low interfacial toughness by controlling the energy release rate through electroplated Ni layers. The use of GR templates contributes to the seamless exfoliation of the nanomembranes, and the technique is relevant to eventual nanomembrane-based integrated device technology.

Towards Detecting Red Palm Weevil Using Machine Learning and Fiber Optic Distributed Acoustic Sensing

Red palm weevil (RPW) is a detrimental pest, which has wiped out many palm tree farms worldwide. Early detection of RPW is challenging, especially in large-scale farms. Here, we introduce the combination of machine learning and fiber optic distributed acoustic sensing (DAS) techniques as a solution for the early detection of RPW in vast farms. Within the laboratory environment, we reconstructed the conditions of a farm that includes an infested tree with ∼12 day old weevil larvae and another healthy tree. Meanwhile, some noise sources are introduced, including wind and bird sounds around the trees. After training with the experimental time- and frequency-domain data provided by the fiber optic DAS system, a fully-connected artificial neural network (ANN) and a convolutional neural network (CNN) can efficiently recognize the healthy and infested trees with high classification accuracy values (99.9% by ANN with temporal data and 99.7% by CNN with spectral data, in reasonable noise conditions). This work paves the way for deploying the high efficiency and cost-effective fiber optic DAS to monitor RPW in open-air and large-scale farms containing thousands of trees.

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Energy-saving photodetectors are the key components in future photonic systems. Particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs), which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built Pt/AlGaN nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defect-free wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on a silicon platform.

Single-Crystalline All-Oxide α-γ-β Heterostructures for Deep-Ultraviolet Photodetection

Recent advancements in gallium oxide (Ga₂O₃)-based heterostructures have allowed optoelectronic devices to be used extensively in the fields of power electronics and deep-ultraviolet photodetection. While most previous research has involved realizing single-crystalline Ga₂O₃ layers on native substrates for high conductivity and visible-light transparency, presented and investigated herein is a single-crystalline β-Ga₂O₃ layer grown on an α-Al₂O₃ substrate through an interfacial γ-In₂O₃ layer. The single-crystalline transparent conductive oxide layer made of wafer-scalable γ-In₂O₃ provides high carrier transport, visible-light transparency, and antioxidation properties that are critical for realizing vertically oriented heterostructures for transparent oxide photonic platforms. Physical characterization based on X-ray diffraction and high-resolution transmission electron microscopy imaging confirms the single-crystalline nature of the grown films and the crystallographic orientation relationships among the monoclinic β-Ga₂O₃, cubic γ-In₂O₃, and trigonal α-Al₂O₃, while the elemental composition and sharp interfaces across the heterostructure are confirmed by Rutherford backscattering spectrometry. Furthermore, the energy-band offsets are determined by X-ray photoelectron spectroscopy at the β-Ga₂O₃/γ-In₂O₃ interface, elucidating a type-II heterojunction with conduction- and valence-band offsets of 0.16 and 1.38 eV, respectively. Based on the single-crystalline β-Ga₂O₃/γ-In₂O₃/α-Al₂O₃ all-oxide heterostructure, a vertically oriented DUV photodetector is fabricated that exhibits a high photoresponsivity of 94.3 A/W, an external quantum efficiency of 4.6 × 10⁴%, and a specific detectivity of 3.09 × 10¹² Jones at 250 nm. The present demonstration lays a strong foundation for and paves the way to future all-oxide-based transparent photonic platforms.

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization

There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to replace the environmentally unfriendly mercury lamps. To date, the use of the ternary AlGaN alloy inevitably has led to transverse magnetic (TM)-dominant emission, an approach that is facing a roadblock. Here, we take an entirely different approach of utilizing a binary GaN compound semiconductor in conjunction with ultrathin quantum disks (QDisks) embedded in AlN nanowires (NWs). The growth of GaN QDisks is realized on a scalable and low-cost Si substrate using plasma-assisted molecular beam epitaxy as a highly controllable monolayer growth platform. We estimated an internal quantum efficiency of ∼81% in a wavelength regime of ∼260 nm for these nanostructures. Additionally, strain mapping obtained by high-angle annular dark-field scanning transmission electron microscopy is studied in conjunction with the TE and TM modes of the carrier recombination. Moreover, for the first time, we quantify the TE and TM modes of the PL emitted by GaN QDisks for deep-UV emitters. We observed nearly pure TE-polarized photoluminescence emission at a polarization angle of ∼5°. This work proposes highly quantum-confined ultrathin GaN QDisks as a promising candidate for deep-UV vertical emitters.

Optical Properties and First-Principles Study of CH3NH3PbBr3 Perovskite Structures

Solution-processed organic-inorganic hybrid perovskites have attracted attention as light-harvesting materials for solar cells and photonic applications. The present study focuses on cubic single crystals and microstructures of CH₃NH₃PbBr₃ perovskite fabricated by a one-step solution-based self-assembly method. It is seen that, in addition to the nucleation from the precursor solution, crystallization occurs when the solution is supersaturated, followed by the formation of a small nucleus of CH₃NH₃PbBr₃ that self-assembles into bigger hollow cubes. A three-dimensional (3D) fluorescence microscopy investigation of hollow cubes confirmed the formation of hollow plates on the bottom; then, the growth starts from the perimeter and propagates to the center of the cube. Furthermore, the growth in the (001) direction follows a layer-by-layer growth model to form a complete cube, confirmed by scanning electronic microscopy (SEM) observations. Two-dimensional (2D)-3D fluorescence microscopy and photoluminescence (PL) measurements confirm a peak emission at 535 nm. To get more insights into the structural and optical properties, density functional theory (DFT) simulations were conducted. The electronic and optical properties calculated by DFT are in agreement with the obtained experimental values. The density-of-state (DOS) calculations revealed that the valence band maximum (VBM) consists of states contributed by Br and Pb, which agrees with the X-ray photoelectron spectroscopy valence band (XPS VB) measurements.

Sensing within the OTDR dead-zone using a two-mode fiber

An optical time-domain reflectometer (OTDR) is incapable of providing sensing or diagnostic information within dead-zones. We use a two-mode fiber (TMF) and a photonic lantern to completely overcome the main OTDR's dead-zone originating from the front facet of optical fiber. This is achieved by injecting the optical pulses of the OTDR in the form of the fundamental ${{\rm LP}_{{01}}}$ mode and meanwhile collecting the Rayleigh signals associated with the higher-order modes. Using the reported TMF-based OTDR, we accurately sense the position and frequency of a vibration event located within the dead-zone as a proof-of-concept demonstration.

Gbit/s ultraviolet-C diffuse-line-of-sight communication based on probabilistically shaped DMT and diversity reception

We demonstrated a high-speed 1×2 single-input and multiple-output (SIMO) diffuse-line-of-sight (diffuse-LOS) ultraviolet-C (UVC) solar-blind communication link over a distance of 5 meters. To approach the Shannon limit and improve the spectral efficiency, we implemented probabilistically shaped discrete multitone modulation. As compared to a single-input and single-output (SISO) counterpart, we observed significant improvement in the SIMO link in terms of the angle of view of the receiver and the immunity to emulated weather condition. A wide angle of view of ± 9^° is achieved in the SIMO system, with up to a 1.09-Gbit/s achievable information rate (AIR) and a minimum value of 0.24 Gbit/s. Moreover, the bit error rate of the SIMO link in emulated foggy conditions is lowered significantly when compared to that of the SISO link. This work highlights the practicality of UVC communication over realistic distances and in turbulent environments to fill the research gap in high-speed, solar-blind communication.

Identifying structured light modes in a desert environment using machine learning algorithms

The unique orthogonal shapes of structured light beams have attracted researchers to use as information carriers. Structured light-based free space optical communication is subject to atmospheric propagation effects such as rain, fog, and rain, which complicate the mode demultiplexing process using conventional technology. In this context, we experimentally investigate the detection of Laguerre Gaussian and Hermite Gaussian beams under dust storm conditions using machine learning algorithms. Different algorithms are employed to detect various structured light encoding schemes including the use of a convolutional neural network (CNN), support vector machine, and k-nearest neighbor. We report an identification accuracy of 99% under a visibility level of 9 m. The CNN approach is further used to estimate the visibility range of a dusty communication channel.

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti₃C₂ MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti₃C₂ MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti₃C₂ MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.

Early detection of red palm weevil using distributed optical sensor

Red palm weevil (RPW) poses a serious threat to the cultivation of date palms. It is considered to be the most destructive epidemic pest of palms, responsible for massive economic losses worldwide. Curative methods for RPW are not difficult to apply; however, the early detection of the pest remains a great challenge. Although several detection techniques have been implemented for the early detection of RPW, none of these methods have been proven to be reliable. Here, we use an optical-fiber-distributed acoustic sensor (DAS) as a paradigm shift technology for the early detection of RPW. Our sensitive sensor shows a detection of feeding sound produced by larvae as young as 12 days, in an infested tree. In comparison with existing, commonly-used technologies, this novel sensing technique represents a cost-effective and non-invasive alternative that could provide 24-7, real-time monitoring of 1,000 palm trees or even more. It could also monitor the temperature, an essential feature to control farm fires, another major problem for the cultivation of palm trees around the world.

480-nm distributed-feedback InGaN laser diode for 10.5-Gbit/s visible-light communication

In this Letter, we demonstrate a novel distributed-feedback (DFB) InGaN-based laser diode with narrow-linewidth emission at ∼480nm (sky blue) and its application to high-speed visible-light communication (VLC). A significant side-mode suppression ratio (SMSR) of 42.4 dB, an optical power of ∼14mW, and a resolution-limited linewidth of ∼34pm were obtained under continuous-wave operation. A 5-Gbit/s VLC link was realized using non-return-to-zero on-off keying modulation, whereas a high-speed 10.5-Gbit/s VLC data rate was achieved by using a spectral-efficient 16-quadrature-amplitude-modulation orthogonal frequency-division multiplexing scheme. The reported high-performance sky-blue DFB laser is promising in enabling unexplored dense wavelength-division multiplexing schemes in VLC, narrow-line filtered systems, and other applications where single-frequency lasers are essential such as atomic clocks, high-resolution sensors, and spectroscopy. Single-frequency emitters at the sky-blue wavelength range will further benefit applications in the low-path-loss window of underwater media as well as those operating at the H-beta Fraunhofer line at ∼486nm.

Iron-Based Core-Shell Nanowires for Combinatorial Drug Delivery and Photothermal and Magnetic Therapy

Combining different therapies into a single nanomaterial platform is a promising approach for achieving more efficient, less invasive, and personalized treatments. Here, we report on the development of such a platform by utilizing nanowires with an iron core and iron oxide shell as drug carriers and exploiting their optical and magnetic properties. The iron core has a large magnetization, which provides the foundation for low-power magnetic manipulation and magnetomechanical treatment. The iron oxide shell enables functionalization with doxorubicin through a pH-sensitive linker, providing selective intracellular drug delivery. Combined, the core-shell nanostructure features an enhanced light-matter interaction in the near-infrared region, resulting in a high photothermal conversion efficiency of >80% for effective photothermal treatment. Applied to cancer cells, the collective effect of the three modalities results in an extremely efficient treatment with nearly complete cell death (∼90%). In combination with the possibility of guidance and detection, this platform provides powerful tools for the development of advanced treatments.

Toward self-powered and reliable visible light communication using amorphous silicon thin-film solar cells

Enhancing robustness and energy efficiency is critical in visible light communication (VLC) to support large-scale data traffic and connectivity of smart devices in the era of fifth-generation networks. To this end, we demonstrate that amorphous silicon (a-Si) thin-film solar cells with a high light absorption coefficient are particularly useful for simultaneous robust signal detection and efficient energy harvesting under the condition of weak light in this study. Moreover, a first-generation prototype called AquaE-lite is developed that consists of an a-Si thin-film solar panel and receiver circuits, which can detect weak light as low as 1 µW/cm². Using AquaE-lite and a white-light laser, orthogonal frequency-division multiplexing signals with data rates of 1 Mb/s and 908.2 kb/s are achieved over a 20-m long-distance air channel and 2.4-m turbid outdoor pool water, respectively, under the condition of strong background light. The reliable VLC system based on energy-efficient a-Si thin-film solar cells opens a new pathway for future satellite-air-ground-ocean optical wireless communication to realize connectivity among millions of Internet of Things devices.

Ultraviolet-to-blue color-converting scintillating-fibers photoreceiver for 375-nm laser-based underwater wireless optical communication

Underwater wireless optical communication (UWOC) can offer reliable and secure connectivity for enabling future internet-of-underwater-things (IoUT), owing to its unlicensed spectrum and high transmission speed. However, a critical bottleneck lies in the strict requirement of pointing, acquisition, and tracking (PAT), for effective recovery of modulated optical signals at the receiver end. A large-area, high bandwidth, and wide-angle-of-view photoreceiver is therefore crucial for establishing a high-speed yet reliable communication link under non-directional pointing in a turbulent underwater environment. In this work, we demonstrated a large-area, of up to a few tens of cm², photoreceiver design based on ultraviolet(UV)-to-blue color-converting plastic scintillating fibers, and yet offering high 3-dB bandwidth of up to 86.13 MHz. Tapping on the large modulation bandwidth, we demonstrated a high data rate of 250 Mbps at bit-error ratio (BER) of 2.2 × 10^-3 using non-return-to-zero on-off keying (NRZ-OOK) pseudorandom binary sequence (PRBS) 2¹⁰-1 data stream, a 375-nm laser-based communication link over the 1.15-m water channel. This proof-of-concept demonstration opens the pathway for revolutionizing the photodetection scheme in UWOC, and for non-line-of-sight (NLOS) free-space optical communication.

Deep-Ultraviolet Photodetection Using Single-Crystalline β-Ga2O3/NiO Heterojunctions

In recent years, β-Ga₂O₃/NiO heterojunction diodes have been studied, but reports in the literature lack an investigation of an epitaxial growth process of high-quality single-crystalline β-Ga₂O₃/NiO thin films via electron microscopy analysis and the fabrication and characterization of an optoelectronic device based on the resulting heterojunction stack. This work investigates the thin-film growth of a heterostructure stack comprising n-type β-Ga₂O₃ and p-type cubic NiO layers grown consecutively on c-plane sapphire using pulsed laser deposition, as well as the fabrication of solar-blind ultraviolet-C photodetectors based on the resulting p-n junction heterodiodes. Several characterization techniques were employed to investigate the heterostructure, including X-ray crystallography, ion beam analysis, and high-resolution electron microscopy imaging. X-ray diffraction analysis confirmed the single-crystalline nature of the grown monoclinic and cubic (2̅01) β-Ga₂O₃ and (111) NiO films, respectively, whereas electron microscopy analysis confirmed the sharp layer transitions and high interface qualities in the NiO/β-Ga₂O₃/sapphire double-heterostructure stack. The photodetectors exhibited a peak spectral responsivity of 415 mA/W at 7 V reverse-bias voltage for a 260 nm incident-light wavelength and 46.5 pW/μm² illuminating power density. Furthermore, we also determined the band offset parameters at the thermodynamically stable heterointerface between NiO and β-Ga₂O₃ using high-resolution X-ray photoelectron spectroscopy. The valence and conduction band offsets values were found to be 1.15 ± 0.10 and 0.19 ± 0.10 eV, respectively, with a type-I energy band alignment.

Catalyst-Free Vertical ZnO-Nanotube Array Grown on p-GaN for UV-Light-Emitting Devices

One-dimensional (1D) structures-based UV-light-emitting diode (LED) has immense potential for next-generation applications. However, several issues related to such devices must be resolved first, such as expensive material and growth methods, complicated fabrication process, efficiency droop, and unavoidable metal contamination due to metal catalyst that reduces device efficiency. To overcome these obstacles, we have developed a novel growth method for obtaining a high-quality hexagonal, well-defined, and vertical 1D Gd-doped n-ZnO nanotube (NT) array deposited on p-GaN films and other substrates by pulsed laser deposition. By adopting this approach, the desired high optical and structural quality is achieved without utilizing metal catalyst. Transmission electron microscopy measurements confirm that gadolinium dopants in the target form a transparent in situ interface layer to assist in vertical NT formation. Microphotoluminescence (PL) measurements of the NTs reveal an intense ZnO band edge emission without a defect band, indicating high quality. Carrier dynamic analysis via time-resolved PL confirms that the emission of n-ZnO NTs/p-GaN LED structure is dominated significantly by the radiative recombination process without efficiency droop when high carrier density is injected optically. We developed an electrically pumped UV Gd-doped ZnO NTs/GaN LED as a proof of concept, demonstrating its high internal quantum efficiency (>65%). The demonstrated performance of this cost-effective UV LED suggests its potential application in large-scale device production.

On the realization of across wavy water-air-interface diffuse-line-of-sight communication based on an ultraviolet emitter

We experimentally demonstrated high-speed diffuse line-of-sight optical wireless communication across a wavy water-air-interface. The testbed channel was evaluated, in terms of data rate, coverage and robustness to the dynamic wave movement, based on the performance of different modulation schemes, including non-return-to-zero on-off keying (NRZ-OOK) and quadrature amplitude modulation (QAM)-orthogonal frequency division multiplexing (OFDM). Under the emulated calm water condition, 8-QAM-OFDM offers a data rate of 111.4 Mbit/s at the aligned position, while only 55 Mbit/s is achieved using NRZ-OOK. On the other hand, effective communication can still be maintained at a high data rate of 11 Mbit/s when the photodetector is off aligned laterally by 5 cm based on NRZ-OOK modulation, leading to a coverage of ~79 cm². By utilizing OFDM modulation scheme, a data rate of 30 Mbit/s can be achieved up to 2.5-cm misalignment, leading to a coverage of ~20 cm². Furthermore, in the presence of strong waves (15-mm wave height, causing a scintillation index of 0.667), 4-QAM-OFDM modulation showed a better resilience to channel instability than NRZ-OOK modulation. Our studies pave the way for the eventual realization of communication across a challenging water-air interface without the need for an interface relay, which is much sought-after for implementing a robust and large-coverage underwater-to-terrestrial internet-of-things.

Normalized differential method for improving the signal-to-noise ratio of a distributed acoustic sensor

We experimentally introduce a normalized differential method to enhance the time domain signal-to-noise ratio (SNR) of an optical fiber distributed acoustic sensor (DAS). The reported method is calibrated against the typical differential method in noisy DAS systems, including those utilizing a relatively wide linewidth laser or few-mode fiber. In these two systems, the normalized differential method respectively identifies the position information of various vibration events with 1.7 dB and 0.53 dB SNR improvement. We further demonstrate the ability to locate positions along a fiber that are subjected to vibrations of frequencies higher than the theoretical maximum, but without determining these frequencies.

Perovskite-Based Artificial Multiple Quantum Wells

Semiconductor quantum well structures have been critical to the development of modern photonics and solid-state optoelectronics. Quantum level tunable structures have introduced new transformative device applications and afforded a myriad of groundbreaking studies of fundamental quantum phenomena. However, noncolloidal, III-V compound quantum well structures are limited to traditional semiconductor materials fabricated by stringent epitaxial growth processes. This report introduces artificial multiple quantum wells (MQWs) built from CsPbBr₃ perovskite materials using commonly available thermal evaporator systems. These perovskite-based MQWs are spatially aligned on a large-area substrate with multiple stacking and systematic control over well/barrier thicknesses, resulting in tunable optical properties and a carrier confinement effect. The fabricated CsPbBr₃ artificial MQWs can be designed to display a variety of photoluminescence (PL) characteristics, such as a PL peak shift commensurate with the well/barrier thickness, multiwavelength emissions from asymmetric quantum wells, the quantum tunneling effect, and long-lived hot-carrier states. These new artificial MQWs pave the way toward widely available semiconductor heterostructures for light-conversion applications that are not restricted by periodicity or a narrow set of dimensions.

Solar hydrogen generation: feature introduction

The expected depletion of fossil fuel reserves and its severe environmental impact have brought about the need for sustainable and clean energy resources. Solar hydrogen generation via photoelectrochemical (PEC) water splitting techniques, which combine sunlight, water, and semiconductor materials, are promising alternatives to conventional fossil fuels. Solar-hydrogen fuel produced using PEC methods are renewable, sustainable and environmentally friendly.