Bulk vs. Surface Structure of 3d Metal Impurities in Topological Insulator Bi2Te3

Topological insulators have become one of the most prominent research topics in materials science in recent years. Specifically, Bi₂Te₃ is one of the most promising for technological applications due to its conductive surface states and insulating bulk properties. Herein, we contrast the bulk and surface structural environments of dopant ions Cr, Mn, Fe, Co, Ni, and Cu in Bi₂Te₃ thin films in order to further elucidate this compound. Our measurements show the preferred oxidation state and surrounding crystal environment of each 3d-metal atomic species, and how they are incorporated into Bi₂Te₃. We show that in each case there is a unique interplay between structural environments, and that it is highly dependant on the dopant atom. Mn impurities in Bi₂Te₃ purely substitute into Bi sites in a 2+ oxidation state. Cr atoms seem only to reside on the surface and are effectively not able to be absorbed into the bulk. Whereas for Co and Ni, an array of substitutional, interstitial, and metallic configurations occur. Considering the relatively heavy Cu atoms, metallic clusters are highly favourable. The situation with Fe is even more complex, displaying a mix of oxidation states that differ greatly between the surface and bulk environments.

Influence of dopants on the impermeability of graphene

Graphene has attracted much attention as an impermeable membrane and a protective coating against oxidation. While many theoretical studies have shown that defect-free graphene is impermeable, in reality graphene inevitably has defects in the form of grain boundaries and vacancies. Here, we study the effects of N-dopants on the impermeability of few-layered graphene (FLG) grown on copper using chemical vapor deposition. The grain boundaries in FLG have minimal impact on their permeability to oxygen as they do not provide a continuous channel for gas transport due to high tortuosity. However, we experimentally show that the N-dopants in FLG display multiple configurations that create structural imperfections to selectively allow gas molecules to permeate. We used a comprehensive array of tools including Raman spectroscopy, X-ray photoelectron spectroscopy, optically stimulated electron emission measurements, and density functional theory of N-doped graphene on copper to elucidate the effects of dopant configuration on the impermeability of graphene. Our results clearly show that oxygen can permeate through graphene with non-graphitic nitrogen dopants that create pores in graphene and oxidize the underlying Cu substrate while graphitic nitrogen dopants do not show any changes compared to the pristine form. Furthermore, we observed that the work function of graphene can be tuned effectively by changing the dopant configuration.

Probing the Intrinsic Thermal and Photochemical Stability of Hybrid and Inorganic Lead Halide Perovskites

We report a careful and systematic study of thermal and photochemical degradation of a series of complex haloplumbates APbX₃ (X = I, Br) with hybrid organic (A⁺ = CH₃NH₃) and inorganic (A⁺ = Cs⁺) cations under anoxic conditions (i.e., without exposure to oxygen and moisture by testing in an inert glovebox environment). We show that the most common hybrid materials (e.g., MAPbI₃) are intrinsically unstable with respect to the heat- and light-induced stress and, therefore, can hardly sustain the real solar cell operation conditions. On the contrary, the cesium-based all-inorganic complex lead halides revealed far superior stability and, therefore, provide an impetus for creation of highly efficient and stable perovskite solar cells that can potentially achieve pragmatic operational benchmarks.

Searching for pure iron in nature: the Chelyabinsk meteorite

Herein we aimed to use thermomagnetic analysis (TMA) to determine the nature of iron and nickel in the Chelyabinsk meteorite, and their effect on the meteorite's magnetism.

Tuning the electronic structure of graphene through nitrogen doping: experiment and theory

Tuning the electronic properties of graphene by doping atoms into its lattice makes it more applicable for electronic devices.

Selective Area Band Engineering of Graphene using Cobalt-Mediated Oxidation

This study reports a scalable and economical method to open a band gap in single layer graphene by deposition of cobalt metal on its surface using physical vapor deposition in high vacuum. At low cobalt thickness, clusters form at impurity sites on the graphene without etching or damaging the graphene. When exposed to oxygen at room temperature, oxygen functional groups form in proportion to the cobalt thickness that modify the graphene band structure. Cobalt/Graphene resulting from this treatment can support a band gap of 0.30 eV, while remaining largely undamaged to preserve its structural and electrical properties. A mechanism of cobalt-mediated band opening is proposed as a two-step process starting with charge transfer from metal to graphene, followed by formation of oxides where cobalt has been deposited. Contributions from the formation of both CoO and oxygen functional groups on graphene affect the electronic structure to open a band gap. This study demonstrates that cobalt-mediated oxidation is a viable method to introduce a band gap into graphene at room temperature that could be applicable in electronics applications.

Adjacent Fe-Vacancy Interactions as the Origin of Room Temperature Ferromagnetism in (In(1-x)Fe(x))2O3

Dilute magnetic semiconductors (DMSs) show great promise for applications in spin-based electronics, but in most cases continue to elude explanations of their magnetic behavior. Here, we combine quantitative x-ray spectroscopy and Anderson impurity model calculations to study ferromagnetic Fe-substituted In2O3 films, and we identify a subset of Fe atoms adjacent to oxygen vacancies in the crystal lattice which are responsible for the observed room temperature ferromagnetism. Using resonant inelastic x-ray scattering, we map out the near gap electronic structure and provide further support for this conclusion. Serving as a concrete verification of recent theoretical results and indirect experimental evidence, these results solidify the role of impurity-vacancy coupling in oxide-based DMSs.

Electronic structure and spin trapping in LiMnAs and LiFeAs:Mn

The electronic structure of insulating antiferromagnetic LiMnAs is investigated using soft x-ray spectroscopy and compared to the electronic structure of metallic LiFeAs. Our calculations support the experimentally observed insulating antiferromagnetic order in LiMnAs. The x-ray absorption and resonant inelastic x-ray scattering spectra in LiFeAs and LiMnAs are adequately explained by the electronic structure alone, although it is possible that LiMnAs has significant electronic correlations driven by Hund's J coupling. Finally, we show evidence of a possible spin trap in Li(Fe0.95Mn0.05)As.

A re-evaluation of how functional groups modify the electronic structure of graphene oxide

The first 4 eV of the conduction band in graphene oxide is dominated by states from carbon sites that are in close proximity, but not directly bonded, to oxidizing functional groups. The carbon sites that are bonded directly to these groups, such as epoxide and hydroxyl groups, are much higher in energy.

The coherent potential approximation for strongly correlated systems: electronic structure and magnetic properties of NiO-ZnO solid solutions

A method of electronic structure calculations for strongly correlated disordered materials is developed employing the basic idea of the coherent potential approximation. The evolution of the electronic structure and spin magnetic moment value with the concentration x in strongly correlated Ni1-xZnxO solid solutions is investigated in the framework of this method. The values of the energy gap and magnetic moment obtained are in agreement with the available experimental data.

Surface studies of coarse-grained and nanostructured titanium implants

The results of XPS measurements of nanostructured Ti (ns-Ti) prepared with a help of severe plastic deformation (SPD) have been presented. We have measured XPS spectra of core levels (Ti 2p, O 1s, C 1s, F 1s) and valence bands before and after treatment of ns-Ti-implants in HF. The obtained data have been compared with XPS measurements of untreated and acid treated coarse-grained Ti (cg-Ti). According to these measurements the surface composition has not practically been changed by reduction of grains size of Ti-implants. It has been found that the surface of both types of implants is covered with thick TiO2 layer. The acid treatment reduces the surface contamination of ns-Ti and cg-Ti by hydrocarbons and induces better passivation and formation of more thick TiO2 layer. It has been shown that severe plastic deformation not only improves mechanical properties but also preserves corrosion stability of Ti-implants.

Effect of 3d doping on the electronic structure of BaFe2As2

The electronic structure of BaFe(2)As(2) doped with Co, Ni and Cu has been studied by a variety of experimental and theoretical methods, but a clear picture of the dopant 3d states has not yet emerged. Herein we provide experimental evidence of the distribution of Co, Ni and Cu 3d states in the valence band. We conclude that the Co and Ni 3d states provide additional free carriers to the Fermi level, while the Cu 3d states are found at the bottom of the valence band in a localized 3d(10) shell. These findings help shed light on why superconductivity can occur in BaFe(2)As(2) doped with Co and Ni but not Cu.

Structural ordering in a silica glass matrix under Mn ion implantation

Mn(+)-implanted, amorphous SiO(2) samples were synthesized using pulsed-ion implantation without thermal annealing. The crystal and electronic structures have been studied using x-ray diffraction and synchrotron-based soft x-ray absorption and emission spectroscopy at the Si and Mn L(2,3) edges. We find a combination of small MnO clusters and Si crystallites at shallow depths while tetrahedral Mn coordination is found deeper in the host target. Through a combination of techniques, we find that the implantation process simultaneously decreases the long-range order in the near-surface region and increases order deeper in the SiO(2) host. Our results suggest Mn substitution into Si sites at deep levels catalyzes the formation of α-quartz, providing insight into the complex interactions that determine the local structure around the impurities as well as the overall changes to the crystallinity of implanted SiO(2).

Structural models of FeSe(x)

Two different structural models for non-stoichiometric FeSe(x) are examined and compared with soft x-ray spectroscopy findings for FeSe(x) (x = 0.85, 0.50). A structural model of tetragonal FeSe with excess interstitial Fe gives better agreement with experiment than a structural model of tetragonal FeSe with Se vacancies. This interstitial Fe increases the number of 3d states at the Fermi level. We find evidence that large non-stoichiometric ratios of Fe:Se, such as that of FeSe(0.50), yield clusters of pure Fe in the crystal structure.

Identifying valence structure in LiFeAs and NaFeAs with core-level spectroscopy

Resonant x-ray emission spectroscopy (XES) measurements at Fe L(2,3) edges and electronic structure calculations for LiFeAs and NaFeAs are presented. Experiment and theory show that in the vicinity of the Fermi energy, the density of states is dominated by contributions from Fe 3d states. The comparison of Fe L(2,3) XES with spectra of related FeAs compounds reveals similar trends in energy and the ratio of intensities of the L(2) and L(3) peaks (I(L(2))/I(L(3)) ratio). The I(L(2))/I(L(3)) ratio for all FeAs-based superconductors is found to be closer to that of metallic Fe than that of the strongly correlated FeO. We conclude that iron-based superconductors are weakly or, at most, moderately correlated systems.

Co and Al co-doping for ferromagnetism in ZnO:Co diluted magnetic semiconductors

Co and Al co-doped ZnO diluted magnetic semiconductors are fabricated by a pulsed laser deposition and their electronic structure is investigated using x-ray absorption and emission spectroscopy. The Zn(0.895)Co(0.100)Al(0.005)O thin films grown under oxygen-rich conditions exhibit ferromagnetic behavior without any indication of Co clustering. The Co L-edge and O K-edge x-ray absorption and emission spectra suggest that most of the Co dopants occupy the substitutional sites and the oxygen vacancies are not responsible for free charge carriers. The spectroscopic results and first principles calculations reveal that the ferromagnetism in Co and Al co-doped ZnO semiconductors mainly arises from Al interstitial defects and their hybridization with Co substitutional dopants.

Post-annealing effect on the electronic structure of Mn atoms in Ga(₁-x)Mn(x)As probed by resonant inelastic x-ray scattering

The electronic structure of as-grown and post-annealed Ga(₁-x)Mn(x)As epilayers (x≈0.055) has been investigated using resonant inelastic x-ray scattering. Mn L₂,₃ x-ray emission spectra show that the integral intensity ratio of Mn L₂ to L₃ emission lines increases with annealing temperature and comes close to that of manganese oxide. The oxygen K-emission/absorption spectra of post-annealed Ga₀.₉₄₅Mn₀.₀₅₅As show 1.5-3.0 times higher degree of oxidation on the film surface than that of the as-grown sample. These experimental findings are attributed to the diffusion of Mn impurity atoms from interstitial positions in the GaAs host lattice to the surface where they are passivated by oxygen.