Identifying the molecular adsorption site of a single molecule junction through combined Raman and conductance studies

Single-molecule junctions are ideal test beds for investigating the fundamentals of charge transport at the nanoscale. Conducting properties are strongly dependent on the metal-molecule interface geometry, which, however, is very poorly characterized due to numerous experimental challenges. We report on a new methodology for characterizing the adsorption site of single-molecule junctions through the combination of surface enhanced Raman scattering (SERS), current-voltage (I-V) curve measurements, and density functional theory simulations. This new methodology discriminates between three different adsorption sites for benzenedithiol and aminobenzenethiol junctions, which cannot be identified by solo measurements of either SERS or I-V curves. Using this methodology, we determine the interface geometry of these two prototypical molecules at the junction and its time evolution. By modulating the applied voltage, we can change and monitor the distribution of adsorption sites at the junction.

Origin of Extended UV Stability of 2D Atomic Layer Titania-Based Perovskite Solar Cells Unveiled by Ultrafast Spectroscopy

The inherent instability of UV-induced degradation in TiO₂-based perovskite solar cells was largely improved by replacing the anatase-phase compact TiO₂ layer with an atomic sheet transport layer (ASTL) of two-dimensional (2D) Ti_1-δO₂. The vital role of microscopic carrier dynamics that govern the UV stability of perovskite solar cells was comprehensively examined in this work by performing time-resolved pump-probe spectroscopy. In conventional perovskite solar cells, the presence of a UV-active oxygen vacancy in compact TiO₂ prohibits current generation by heavily trapping electrons after UV degradation. Conversely, the dominant vacancy type in the 2D Ti_1-δO₂ ASTL is a titanium vacancy, which is a shallow acceptor and is not UV-sensitive. Therefore, it significantly suppresses carrier recombination and extends UV stability in perovskite solar cells with a 2D Ti_1-δO₂ ASTL. Other carrier dynamics, such as electron diffusion, electron injection, and hot hole transfer processes, were found to be less affected by UV irradiation. Quantitative pump-probe data clearly show a correlation between the carrier dynamics and UV aging of perovskite solar cells, thus providing a profound insight into the factors driving UV-induced degradation in perovskite solar cells and the origin of its performance.

Stretch dependent electronic structure and vibrational energy of the bipyridine single molecule junction

Change in the molecular orbital energy and vibrational energy of the bipyridine single molecule junction as a function of stretch distance.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe₂ ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E-doping processes of MoTe₂ , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe₂ transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.

In situ observation of the formation process for free-standing Au nanowires with a scanning electron microscope

We have developed a simultaneous electronic and structural characterization method for studying the formation process for Au nanowires. The method is based on two-probe electronic transport measurement of free-standing Au nanowires and simultaneous structural characterization using scanning electron microscopy (SEM). We measured the electronic currents during the electromigration (EM)-induced narrowing process for the free-standing Au nanowires. A free-standing Au nanowire with a desired conductance value was fabricated by EM. Simultaneous SEM and conductance measurements revealed the EM-induced narrowing process for the Au wires, in which material transfer in the nanowires caused growth towards the positively biased electrode and contact failure at the negatively biased electrode. The narrowed free-standing Au nanowires were stable and could be maintained for more than 10 h without their conductance changing. These results indicate the high stability of the EM-processed Au nanowires compared to Au nanowires fabricated by mechanical elongation or the breaking of Au nanocontacts.

Nutritional assessment using stable isotope ratios of carbon and nitrogen in the scalp hair of geriatric patients who received enteral and parenteral nutrition formulas

BACKGROUND & AIMS

The δ¹³C and δ¹⁵N values in the scalp hair of geriatric patients in Japan who received the enteral or parenteral nutrition formula were measured to assess nutritional status.

METHODS

The relations among δ¹³C, δ¹⁵N, calorie intake, BMI, albumin concentration, total cholesterol (T-CHO) and geriatric nutritional risk index (GNRI) in the patients were investigated. Furthermore, the enrichment of δ¹³C and δ¹⁵N from the nutrients to the hair was investigated.

RESULTS

The δ¹³C values in the hair of patients who received enteral nutrition decreased with decreases in the calories received, while the δ¹⁵N values increased, suggesting malnutrition in some patients with a low calorie intake due to a negative nitrogen balance. The distribution of patients with a low calorie intake (below 20 kcal/kg/day) when δ¹³C was plotted against δ¹⁵N differed from that of control subjects, but the distribution of patients with a high calorie intake (above 20 kcal/kg/day) was similar to that of control subjects. No significant differences were observed in BMI, albumin concentration, T-CHO or GNRI between the low and high calorie groups. The enrichment of δ¹³C and δ¹⁵N from the enteral nutrients to the hair were inversely correlated with the δ¹³C and δ¹⁵N in the enteral nutrients. The enrichment levels of δ¹³C and δ¹⁵N tended to be higher and lower, respectively, in the high calorie group. On the other hand, the δ¹³C and δ¹⁵N values in the hair of patients who received parenteral nutrition were higher and lower than those in the control subjects and in the patients who received enteral nutrition, respectively, reflecting the higher δ¹³C and lower δ¹⁵N contents of the parenteral nutrients.

CONCLUSIONS

The δ¹³C and δ¹⁵N values in the hair of patients who received enteral nutrition may be effective indicators for evaluating the long-term nutritional status of geriatric patients. A calorie intake of 20 kcal/kg/day may be a cut-off value for malnutrition in Japanese geriatric patients receiving enteral nutrition. However, caution is necessary when dealing with patients switching from parental nutrition as parenteral nutrition resulted in different changes in δ¹³C and δ¹⁵N. The enrichment levels of δ¹³C and δ¹⁵N from the enteral nutrients to the hair may be inversely correlated with the δ¹³C and δ¹⁵N values of enteral nutrients and vary according to the calorie intake.

Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps

Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.

Determination of the number of atoms present in nano contact based on shot noise measurements with highly stable nano-fabricated electrodes

A highly stable experimental setup was developed for the measurement of shot noise in atomic contacts and molecular junctions to determine the number of atoms or molecules present. The use of a nano-fabricated mechanically controllable break junction (MCBJ) electrode improved the overall stability of the experimental setup. The improved stability of the system and optimization of measurement system enabled us to comprehensively investigate the shot noise as well as charge transport properties in Au atomic contacts and molecular junctions. We present a solid proof that the number of atoms (cross sectional atom) in the Au atomic contacts was exactly one. In the atomic contacts, contribution from the additional channels was under the detection limit. Furthermore, the effect of molecular adsorption on the charge transport in the Au atomic contact was investigated. Additional transport channels were opened by exposing pyrazine molecules to the Au contacts, which gave rise to an increase in the Fano factor in the shot noise.

Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning

The polarity of the charge carriers injected through Schottky junctions of α-phase molybdenum ditelluride (α-MoTe2) and various metals was characterized. We found that the Fermi-level pinning in the metal/α-MoTe2 Schottky junction is so weak that the polarity of the carriers (electron or hole) injected from the junction can be controlled by the work function of the metals, in contrast to other transition metal dichalcogenides such as MoS2. From the estimation of the Schottky barrier heights, we obtained p-type carrier (hole) injection from a Pt/α-MoTe2 junction with a Schottky barrier height of 40 meV at the valence band edge. n-Type carrier (electron) injection from Ti/α-MoTe2 and Ni/α-MoTe2 junctions was also observed with Schottky barrier heights of 50 and 100 meV, respectively, at the conduction band edge. In addition, enhanced ambipolarity was demonstrated in a Pt-Ti hybrid contact with a unique structure specially designed for polarity-reversible transistors, in which Pt and Ti electrodes were placed in parallel for injecting both electrons and holes.

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WOx with x < 3) grown on tungsten diselenide (WSe2) can be used as both controlled charge transfer dopants and low-barrier contacts for p-type WSe2 transistors. Exposure of atomically thin WSe2 transistors to ozone (O3) at 100 °C results in self-limiting oxidation of the WSe2 surfaces to conducting WOx films. WOx-covered WSe2 is highly hole-doped due to surface electron transfer from the underlying WSe2 to the high electron affinity WOx. The dopant concentration can be reduced by suppressing the electron affinity of WOx by air exposure, but exposure to O3 at room temperature leads to the recovery of the electron affinity. Hence, surface transfer doping with WOx is virtually controllable. Transistors based on WSe2 covered with WOx show only p-type conductions with orders of magnitude better on-current, on/off current ratio, and carrier mobility than without WOx, suggesting that the surface WOx serves as a p-type contact with a low hole Schottky barrier. Our findings point to a simple and effective strategy for creating p-type devices based on two-dimensional transition metal dichalcogenides with controlled dopant concentrations.

Hunting for Monolayer Oxide Nanosheets and Their Architectures

In two-dimensional materials, thickness identification with a sufficient characterization range is essential to fundamental study and practical applications. Here, we report a universal optical method for rapid and reliable identification of single- to quindecuple-layers in oxide nanosheets (Ti_0.87O₂, Ca₂Nb₃O₁₀, Ca₂NaNb₄O₁₃). Because of their wide bandgap nature (E_g = ∼4 eV) and zero opacity, most oxide nanosheets exhibit a weak white-light contrast (<1.5%), which precludes optical identification. Through a systematic study of the optical reflectivity of Ti_0.87O₂ nanosheets on SiO₂/Si substrates, we show that the use of thinner SiO₂ (∼100 nm) offers optimum visualization conditions with a contrast of >5%; the contrast is a nonmonotonic function of wavelength and changes its sign at ≈550 nm; the nanosheets are brighter than the substrate at short wavelengths and darker at long ones. Such a nonmonotonic optical response is common to semiconducting oxide nanosheets, including Ca₂Nb₃O₁₀ and Ca₂NaNb₄O₁₃. The optical contrast differences between the substrates and nanosheets with different numbers of layers were collected, serving as a standard reference from which the number of layers can be determined by optical microscopy. Our method will facilitate the thickness-dependent study of various oxide nanosheets and their architectures, as well as expedite research toward practical applications.

Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics

Adsorption sites of molecules critically determine the electric/photonic properties and the stability of heterogeneous molecule-metal interfaces. Then, selectivity of adsorption site is essential for development of the fields including organic electronics, catalysis, and biology. However, due to current technical limitations, site-selectivity, i.e., precise determination of the molecular adsorption site, remains a major challenge because of difficulty in precise selection of meaningful one among the sites. We have succeeded the single site-selection at a single-molecule junction by performing newly developed hybrid technique: simultaneous characterization of surface enhanced Raman scattering (SERS) and current-voltage (I-V) measurements. The I-V response of 1,4-benzenedithiol junctions reveals the existence of three metastable states arising from different adsorption sites. Notably, correlated SERS measurements show selectivity toward one of the adsorption sites: "bridge sites". This site-selectivity represents an essential step toward the reliable integration of individual molecules on metallic surfaces. Furthermore, the hybrid spectro-electric technique reveals the dependence of the SERS intensity on the strength of the molecule-metal interaction, showing the interdependence between the optical and electronic properties in single-molecule junctions.

Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors

This review presents recent progress on charge transport properties, carrier scattering mechanisms, and carrier mobility engineering of two-dimensional transition metal chalcogenides.

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Edge mixing dynamics in graphene p-n junctions in the quantum Hall regime

Massless Dirac electron systems such as graphene exhibit a distinct half-integer quantum Hall effect, and in the bipolar transport regime co-propagating edge states along the p–n junction are realized. Additionally, these edge states are uniformly mixed at the junction, which makes it a unique structure to partition electrons in these edge states. Although many experimental works have addressed this issue, the microscopic dynamics of electron partition in this peculiar structure remains unclear. Here we performed shot-noise measurements on the junction in the quantum Hall regime as well as at zero magnetic field. We found that, in sharp contrast with the zero-field case, the shot noise in the quantum Hall regime is finite in the bipolar regime, but is strongly suppressed in the unipolar regime. Our observation is consistent with the theoretical prediction and gives microscopic evidence that the edge states are uniquely mixed along the p–n junction.

A graphene p–n junction can be created by connecting electrical gates that generate electron-doped and hole-doped areas in a flake. Here, the authors use shot-noise measurements to provide microscopic evidence that edge states are uniquely mixed along the junction in the quantum Hall regime.

Parity effect of bipolar quantum Hall edge transport around graphene antidots

Parity effect, which means that even-odd property of an integer physical parameter results in an essential difference, ubiquitously appears and enables us to grasp its physical essence as the microscopic mechanism is less significant in coarse graining. Here we report a new parity effect of quantum Hall edge transport in graphene antidot devices with pn junctions (PNJs). We found and experimentally verified that the bipolar quantum Hall edge transport is drastically affected by the parity of the number of PNJs. This parity effect is universal in bipolar quantum Hall edge transport of not only graphene but also massless Dirac electron systems. These results offer a promising way to design electron interferometers in graphene.

Electrostatically Reversible Polarity of Ambipolar α-MoTe2 Transistors

A doping-free transistor made of ambipolar α-phase molybdenum ditelluride (α-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.

Self-limiting layer-by-layer oxidation of atomically thin WSe2

Growth of a uniform oxide film with a tunable thickness on two-dimensional transition metal dichalcogenides is of great importance for electronic and optoelectronic applications. Here we demonstrate homogeneous surface oxidation of atomically thin WSe2 with a self-limiting thickness from single- to trilayers. Exposure to ozone (O3) below 100 °C leads to the lateral growth of tungsten oxide selectively along selenium zigzag-edge orientations on WSe2. With further O3 exposure, the oxide regions coalesce and oxidation terminates leaving a uniform thickness oxide film on top of unoxidized WSe2. At higher temperatures, oxidation evolves in the layer-by-layer regime up to trilayers. The oxide films formed on WSe2 are nearly atomically flat. Using photoluminescence and Raman spectroscopy, we find that the underlying single-layer WSe2 is decoupled from the top oxide but hole-doped. Our findings offer a new strategy for creating atomically thin heterostructures of semiconductors and insulating oxides with potential for applications in electronic devices.

Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers

Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

Boost up carrier mobility for ferroelectric organic transistor memory via buffering interfacial polarization fluctuation

Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μ_FET) up to 4.6 cm² V⁻¹ s⁻¹ is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the “reading” and “programming” speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

Structure and transport properties of the interface between CVD-grown graphene domains

During the chemical vapor deposition (CVD) growth of graphene, graphene domains grown on a Cu surface merge together and form a uniform graphene sheet. For high-performance electronics and other applications, it is important to understand the interfacial structure of the merged domains, as well as their influence on the physical properties of graphene. We synthesized large hexagonal graphene domains with controlled orientations on a heteroepitaxial Cu film and studied the structure and properties of the interfaces between the domains mainly merged with the same angle. Although the merged domains have various interfaces with/without wrinkles and/or increased defect-related Raman D-band intensity, the intra-domain transport showed higher carrier mobility reaching 20,000 cm(2) V(-1) s(-1) on SiO2 at 280 K (the mean value was 7200 cm(2) V(-1) s(-1)) than that measured for inter-domain areas, 6400 cm(2) V(-1) s(-1) (mean value 2000 cm(2) V(-1) s(-1)). The temperature dependence of the mobility suggests that impurity scattering dominates at the interface even for the merged domains with the same orientation. This study highlights the importance of domain interfaces, especially on the carrier transport properties, in CVD-grown graphene.

Strain-tunable superconducting field-effect transistor with an organic strongly-correlated electron system

A novel type of flexible organic field-effect transistor in which strain effects can be finely tuned continuously has been fabricated. In this novel device structure, electronic phases can be controlled both by "band-filling" and by "band-width" continuously. Finally, co-regulation of "band-filling" and "band-width" in the strongly-correlated organic material realize field-induced emergence of superconducting fractions at low temperature.

Ambipolar MoTe2 transistors and their applications in logic circuits

We report ambipolar charge transport in α-molybdenum ditelluride (MoTe2 ) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (Vbg) and drain-source voltage (Vds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.

Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂

Two-dimensional layered crystals could show phonon properties that are markedly distinct from those of their bulk counterparts, because of the loss of periodicities along the c-axis directions. Here we investigate the phonon properties of bulk and atomically thin α-MoTe2 using Raman spectroscopy. The Raman spectrum of α-MoTe2 shows a prominent peak of the in-plane E(1)2g mode, with its frequency upshifting with decreasing thickness down to the atomic scale, similar to other dichalcogenides. Furthermore, we find large enhancement of the Raman scattering from the out-of-plane B(1)2g mode in the atomically thin layers. The B(1)2g mode is Raman inactive in the bulk, but is observed to become active in the few-layer films. The intensity ratio of the B(1)2g to E(1)2g peaks evolves significantly with decreasing thickness, in contrast with other dichalcogenides. Our observations point to strong effects of dimensionality on the phonon properties of MoTe2.