Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments

Carrier multiplication (CM) is the process in which multiple electron-hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Highly Photoconductive InP Quantum Dots Films and Solar Cells

InP and InZnP colloidal quantum dots (QDs) are promising materials for application in light-emitting devices, transistors, photovoltaics, and photocatalytic cells. In addition to possessing an appropriate bandgap, high absorption coefficient, and high bulk carrier mobilities, the intrinsic toxicity of InP and InZnP is much lower than for competing QDs that contain Cd or Pb-providing a potentially safer commercial product. However, compared to other colloidal QDs, InP QDs remain sparsely used in devices and their electronic transport properties are largely unexplored. Here, we use time-resolved microwave conductivity measurements to study charge transport in films of InP and InZnP colloidal quantum dots capped with a variety of short ligands. We find that transport in InP QDs is dominated by trapping effects, which are mitigated in InZnP QDs. We improve charge carrier mobilities with a range of ligand-exchange treatments and for the best treatments reach mobilities and lifetimes on par with those of PbS QD films used in efficient solar cells. To demonstrate the device-grade quality of these films, we construct solar cells based on InP & InZnP QDs with power conversion efficiencies of 0.65 and 1.2%, respectively. This represents a large step forward in developing Cd- and Pb-free next-generation optoelectronic devices.

Selective antimony reduction initiating the nucleation and growth of InSb quantum dots

Indium antimonide (InSb) quantum dots (QDs) have unique and interesting photophysical properties, but widespread experimentation with InSb QDs is lacking due to the difficulty in synthesizing this material. The key experimental challenge in fabricating InSb QDs is preparing a suitable Sb-precursor in the correct oxidation state that reacts with the In-precursor in a controllable manner. Here, we review and discuss the synthetic strategies for making colloidal InSb QDs and present a new reaction scheme yielding small (∼1 nm diameter) InSb QDs. This was accomplished by employing Sb(NMe2)3 as the antimony precursor and by screening different reducing agents that can selectively reduce it to stibine in situ. The released SbH3, subsequently, reacts with In carboxylate to form small InSb clusters. The absorption features are moderately tunable (from 400 nm to 660 nm) by the amount and rate of reductant addition as well as the temperature of injection and subsequent annealing. Optical properties were probed with transient absorption spectroscopy and show complex time and spectral dependencies.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

Multinary semiconductor nanoparticles such as CuInS₂, AgInS₂, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS₂-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4-butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.

Monolithic porous magnesium silicide

Macroporous magnesium silicide monoliths were prepared by a two-step magnesiothermic reaction starting from hierarchically structured silica with silicon as an intermediate step.

Structure, transport and photoconductance of PbS quantum dot monolayers functionalized with a copper phthalocyanine derivative

We simultaneously surface-functionalize PbS nanocrystals with Cu 4,4′,4′′,4′′′-tetraaminophthalocyanine and assemble this hybrid material into macroscopic monolayers.

Ultrafast Transient Absorption and Terahertz Spectroscopy as Tools to Probe Photoexcited States and Dynamics in Colloidal 2D Nanostructures

Two-dimensional (2D) semiconductors hold high potential for the implementation of efficient ultrathin electronics (e.g. field-effect transistors, light emitting diodes and solar cell devices). In recent years, colloidal methods to synthesize ultrathin 2D materials have been developed that offer alternatives (like the production of non-layered 2D materials and upscaling) to mechanical exfoliation methods. By focusing on optoelectronic applications, it is important to characterize the nature and dynamics of photoexcited states in these materials. In this paper, we use ultrafast transient absorption (TA) and terahertz (THz) spectroscopy as optimal tools for such a characterization. We choose recently synthesized ultrathin colloidal 2D InSe nanosheets (inorganic layer thickness 0.8–1.7 nm; ≤5 nm including ligands) for discussing TA and THz spectroscopic studies and elucidate their charge carrier dynamics under photoexcitation with TA. THz spectroscopy is then used to extract contactless AC mobilities as high as 20±2 cm2/Vs in single InSe layers. The obtained results underpin the general applicability of TA and THz spectroscopy for characterizing photoexcited states in 2D semiconductors.

Photogeneration and Mobility of Charge Carriers in Atomically Thin Colloidal InSe Nanosheets Probed by Ultrafast Terahertz Spectroscopy

The implementation of next generation ultrathin electronics by applying highly promising dimensionality-dependent physical properties of two-dimensional (2D) semiconductors is ever increasing. In this context, the van der Waals layered semiconductor InSe has proven its potential as photodetecting material with high charge carrier mobility. We have determined the photogeneration charge carrier quantum yield and mobility in atomically thin colloidal InSe nanosheets (inorganic layer thickness 0.8-1.7 nm, mono/double-layers, ≤ 5 nm including ligands) by ultrafast transient terahertz (THz) spectroscopy. A near unity quantum yield of free charge carriers is determined for low photoexcitation density. The charge carrier quantum yield decreases at higher excitation density due to recombination of electrons and holes, leading to the formation of neutral excitons. In the THz frequency domain, we probe a charge mobility as high as 20 ± 2 cm²/(V s). The THz mobility is similar to field-effect transistor mobilities extracted from unmodified exfoliated thin InSe devices. The current work provides the first results on charge carrier dynamics in ultrathin colloidal InSe nanosheets.

All-Quantum-Dot Infrared Light-Emitting Diodes

Colloidal quantum dots (CQDs) are promising candidates for infrared electroluminescent devices. To date, CQD-based light-emitting diodes (LEDs) have employed a CQD emission layer sandwiched between carrier transport layers built using organic materials and inorganic oxides. Herein, we report the infrared LEDs that use quantum-tuned materials for each of the hole-transporting, the electron-transporting, and the light-emitting layers. We successfully tailor the bandgap and band position of each CQD-based component to produce electroluminescent devices that exhibit emission that we tune from 1220 to 1622 nm. Devices emitting at 1350 nm achieve peak external quantum efficiency up to 1.6% with a low turn-on voltage of 1.2 V, surpassing previously reported all-inorganic CQD LEDs.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

Epitaxially connected PbSe quantum-dot films: controlled neck formation and optoelectronic properties

Ligand exchange is a much-used method to increase the conductivity of colloidal quantum-dot films by replacing long insulating ligands on quantum-dot surfaces with shorter ones. Here we show that while some ligands indeed replace the original ones as expected, others may be used to controllably remove the native ligands and induce epitaxial necking of specific crystal facets. In particular, we demonstrate that amines strip lead oleate from the (100) surfaces of PbSe quantum dots. This leads to necking of QDs and results in cubic superlattices of epitaxially connected QDs. The number of amine head-groups as well as the carbon chain length of linear diamines is shown to control the extent of necking. DFT calculations show that removal of Pb(oleate)2 from (100) surfaces is exothermic for all amines, but the driving force increases as monoamines < long diamines < short diamines < tetramines. The neck formation and cubic ordering results in a higher optical absorption cross section and higher charge carrier mobilities, thereby showing that the use of the proper multidentate amine molecules is a powerful tool to create supercrystals of epitaxially connected PbSe QDs with controlled electronic coupling.

High charge-carrier mobility enables exploitation of carrier multiplication in quantum-dot films

Carrier multiplication, the generation of multiple electron–hole pairs by a single photon, is of great interest for solar cells as it may enhance their photocurrent. This process has been shown to occur efficiently in colloidal quantum dots, however, harvesting of the generated multiple charges has proved difficult. Here we show that by tuning the charge-carrier mobility in quantum-dot films, carrier multiplication can be optimized and may show an efficiency as high as in colloidal dispersion. Our results are explained quantitatively by the competition between dissociation of multiple electron–hole pairs and Auger recombination. Above a mobility of ~1 cm² V⁻¹ s⁻¹, all charges escape Auger recombination and are quantitatively converted to free charges, offering the prospect of cheap quantum-dot solar cells with efficiencies in excess of the Shockley–Queisser limit. In addition, we show that the threshold energy for carrier multiplication is reduced to twice the band gap of the quantum dots.

Carrier multiplication effects are of promise for enhancement of solar cells, but have been difficult to exploit in such devices. Here, the authors demonstrate how carrier multiplication in quantum-dot films can be considerably enhanced by appropriate tuning of the charge-carrier mobility.

Tuning electron transfer rates through molecular bridges in quantum dot sensitized oxides

Photoinduced electron transfer processes from semiconductor quantum dots (QDs) molecularly bridged to a mesoporous oxide phase are quantitatively surveyed using optical pump-terahertz probe spectroscopy. We control electron transfer rates in donor-bridge-acceptor systems by tuning the electronic coupling strength through the use of n-methylene (SH-[CH2]n-COOH) and n-phenylene (SH-[C6H4](n)-COOH) molecular bridges. Our results show that electron transfer occurs as a nonresonant quantum tunneling process with characteristic decay rates of β(n) = 0.94 ± 0.08 and β(n) = 1.25 per methylene and phenylene group, respectively, in quantitative agreement with reported conductance measurements through single molecules and self-assembled monolayers. For a given QD donor-oxide acceptor separation distance, the aromatic n-phenylene based bridges allow faster electron transfer processes when compared with n-methylene based ones. Implications of these results for QD sensitized solar cell design are discussed.

Activating Carrier Multiplication in PbSe Quantum Dot Solids by Infilling with Atomic Layer Deposition

Carrier multiplication-the generation of multiple electron-hole pairs by a single photon-is currently of great interest for the development of highly efficient photovoltaics. We study the effects of infilling PbSe quantum-dot solids with metal oxides by atomic layer deposition on carrier multiplication. Using time-resolved microwave conductivity measurements, we find, for the first time, that carrier multiplication occurs in 1,2-ethanedithiol-linked PbSe quantum-dot solids infilled with Al2O3 or Al2O3/ZnO, while it is negligible or absent in noninfilled films. The carrier-multiplication efficiency of the infilled quantum-dot solids is close to that of solution-dispersed PbSe quantum dots, and not significantly limited by Auger recombination.

Photoconductivity of PbSe quantum-dot solids: dependence on ligand anchor group and length

The assembly of quantum dots is an essential step toward many of their potential applications. To form conductive solids from colloidal quantum dots, ligand exchange is required. Here we study the influence of ligand replacement on the photoconductivity of PbSe quantum-dot solids, using the time-resolved microwave conductivity technique. Bifunctional replacing ligands with amine, thiol, or carboxylic acid anchor groups of various lengths are used to assemble quantum solids via a layer-by-layer dip-coating method. We find that when the ligand lengths are the same, the charge carrier mobility is higher in quantum-dot solids with amine ligands, while in quantum-dot solids with thiol ligands the charge carrier lifetime is longer. If the anchor group is the same, the charge carrier mobility is ligand length dependent. The results show that the diffusion length of charge carriers can reach several hundred nanometers.

Size-dependent electron transfer from PbSe quantum dots to SnO2 monitored by picosecond Terahertz spectroscopy

We report the direct and unambiguous determination of electron transfer rates and efficiencies from PbSe quantum dots (QDs) to mesoporous SnO2 films. We monitor the time-dependent electron density within the oxide with picosecond time resolution using Terahertz spectroscopy, following optical excitation of the QDs using a femtosecond laser pulse. QD-oxide electron transfer occurs with efficiencies of ∼2% in our samples under 800 nm pumping with a marked dependence on QD size, ranging from ∼100 ps injection times for the smallest, ∼2 nm diameter QDs, to ∼1 ns time scale for ∼7 nm QDs. The size-dependent electron transfer rates are modeled within the framework of Marcus theory and the implications of the results for device design are discussed.

Free charges produced by carrier multiplication in strongly coupled PbSe quantum dot films

We show that in films of strongly coupled PbSe quantum dots multiple electron-hole pairs can be efficiently produced by absorption of a single photon (carrier multiplication). Moreover, in these films carrier multiplication leads to the generation of free, highly mobile charge carriers rather than excitons. Using the time-resolved microwave conductivity technique, we observed the production of more than three electron-hole pairs upon absorption of a single highly energetic photon (5.7E(g)). Free charge carriers produced via carrier multiplication are readily available for use in optoelectronic devices even without employing any complex donor/acceptor architecture or electric fields.

Magnetic nanoparticle assembly on surfaces using click chemistry

Controlled assembly of ferromagnetic nanoparticles on surfaces is of crucial importance for a range of spintronic and data storage applications. Here, we present a novel method for assembling monolayers of ferromagnetic FePt nanoparticles on silicon oxide substrates using "click chemistry". Reaction of alkyne-functionalized FePt nanoparticles with azide-terminated self-assembled monolayers (SAMs), on silicon oxide, leads to the irreversible attachment of magnetic nanoparticles to the surface via triazole linkers. Based on this covalent interaction, well-packed monolayers of FePt nanoparticles were prepared and nanoparticle patterns are generated on surfaces via microcontact printing (μCP).

Monolayer-directed assembly and magnetic properties of FePt nanoparticles on patterned aluminum oxide

FePt nanoparticles (NPs) were assembled on aluminum oxide substrates, and their ferromagnetic properties were studied before and after thermal annealing. For the first time, phosph(on)ates were used as an adsorbate to form self-assembled monolayers (SAMs) on alumina to direct the assembly of NPs onto the surface. The Al₂O₃ substrates were functionalized with aminobutylphosphonic acid (ABP) or phosphonoundecanoic acid (PNDA) SAMs or with poly(ethyleneimine) (PEI) as a reference. FePt NPs assembled on all of these monolayers, but much less on unmodified Al₂O₃, which shows that ligand exchange at the NPs is the most likely mechanism of attachment. Proper modification of the Al₂O₃ surface and controlling the immersion time of the modified Al₂O₃ substrates into the FePt NP solution resulted in FePt NPs assembly with controlled NP density. Alumina substrates were patterned by microcontact printing using aminobutylphosphonic acid as the ink, allowing local NP assembly. Thermal annealing under reducing conditions (96%N₂/4%H₂) led to a phase change of the FePt NPs from the disordered FCC phase to the ordered FCT phase. This resulted in ferromagnetic behavior at room temperature. Such a process can potentially be applied in the fabrication of spintronic devices.

Low-temperature solution synthesis of chemically functional ferromagnetic FePtAu nanoparticles

Magnetic nanoparticles are of great scientific and technological interest. The application of ferromagnetic nanoparticles for high-density data storage has great potential, but energy efficient synthesis of uniform, isolated, and patternable nanoparticles that remain ferromagnetic at room temperature is not trivial. Here, we present a low-temperature solution synthesis method for FePtAu nanoparticles that addresses all those issues and therefore can be regarded as an important step toward applications. We show that the onset of the chemically ordered face-centered tetragonal (L1(0)) phase is obtained for thermal annealing temperatures as low as 150 degrees C. Large uniaxial magnetic anisotropy (10(7) erg/cm(3)) and a high long-range order parameter have been obtained. Our low-temperature solution annealing leaves the organic ligands intact, so that the possibility for postanneal monolayer formation and chemically assisted patterning on a surface is maintained.