Bias-dependent generation and quenching of defects in pentacene

We describe a defect generation phenomenon that is new to organic semiconductors. A defect in pentacene single crystals can be created by bias-stress and persists at room temperature for an hour in the dark but only seconds with 420 nm illumination. The defect gives rise to a hole trap at Ev+0.38 eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67 eV activation energy with a small (10(8) s(-1)) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.

Synthesis, Structure and Physical Properties of the First One-Dimensional Phenalenyl-Based Neutral Radical Molecular Conductor

We report the preparation, crystallization, and solid-state characterization of a benzyl-substituted spirobiphenalenyl radical. The crystal structure shows that the radical is monomeric in the solid state, with the molecules packed in an unusual one-dimensional (1-D) fashion that we refer to as a pi-step stack. This particular mode of 1-D stacking is forced on the lattice arrangement by the presence of the orthogonal phenalenyl units that were specifically incorporated to prevent the crystallization of low-dimensional structures. The structure shows that this strategy is effective, and neighboring molecules in the stack can only interact via the overlap of one pair of active (spin-bearing) carbon atoms per phenalenyl unit, leading to the pi-step structure in which the remaining four active carbon atoms per phenalenyl unit do not interact with nearest neighbor molecules. The magnetic susceptibility data in the temperature range 4-360 K may be fit to an antiferromagnetic Heisenberg S = 1/2 linear chain model with intrachain spin coupling J = -52.3 cm(-1). Despite the uniform stacking, the material has a room temperature conductivity of 1.4 x 10(-3) S/cm and is best described as a Mott insulator.

Superconductivity in single crystals of the fullerene C70

The observation of superconductivity in doped C60 has attracted much attention, as these materials represent an entirely new class of superconductors. A maximum transition temperature (Tc) of 40 K has been reported for electron-doped C60 crystals, while a Tc of 52 K has been seen in hole-doped crystals; only the copper oxide superconductors have higher transition temperatures. The results for C60 raise the intriguing questions of whether conventional electron-phonon coupling alone can produce such high transition temperatures, and whether even higher transition temperatures might be observed in other fullerenes. There have, however, been no confirmed reports of superconductivity in other fullerenes, though it has recently been observed in carbon nanotubes. Here we report the observation of superconductivity in single crystals of electric-field-doped C70. The maximum transition temperature of about 7 K is achieved when the sample is doped to approximately four electrons per C70 molecule, which corresponds to a half-filled conduction band. We anticipate superconductivity in smaller fullerenes at temperatures even higher than in C60 if the right charge density can be induced.