Experimental and Computational Insight into the Chemical Bonding and Electronic Structure of Clathrate Compounds in the Sn-In-As-I System

Inorganic clathrate materials are of great fundamental interest and potential practical use for application as thermoelectric materials in freon-free refrigerators, waste-heat converters, direct solar thermal energy converters, and many others. Experimental studies of their electronic structure and bonding have been, however, strongly restricted by (i) the crystal size and (ii) essential difficulties linked with the clean surface preparation. Overcoming these handicaps, we present for the first time a comprehensive picture of the electronic band structure and the chemical bonding for the Sn(24-x-δ)InxAs(22-y)I8 clathrates obtained by means of photoelectron spectroscopy and complementary quantum modeling.

Diversity of microstructural phenomena in superconducting and non-superconducting Rb(x)Fe(2-y)Se2: a transmission electron microscopy study at the atomic scale

Superconducting (SC) and non-superconducting (non-SC)Rb(x)Fe(2-y)Se2 crystals were grown using the "self-flux" technique in order to assign the microstructural changes to the onset of superconductivity in complex iron selenides. The crystals were thoroughly characterized by magnetic susceptibility and transport measurements as well as powder X-ray diffraction. Special attention was paid to the comparison of the microstructure of the crystals with and without the superconducting transition by means of transmission electron microscopy (TEM). It is shown that the alternation of ordered and disordered regions on the sample surface and along the c-axis is characteristic for both SC and non-SC materials and therefore does not necessarily represent a trigger of superconductivity. Three types of electron diffraction patterns were found for the superconducting Rb(x)Fe(2-y)Se2 sample, of which one is observed for the first time and originates from alkali metal ordering. Moreover, for the superconducting Rb(x)Fe(2-y)Se2 material a monoclinic distortion with β ∼ 87° was observed, leading to the space group I2/m. This monoclinic distortion seems to be an attribute of the superconducting material only, whereas in the non-superconducting sample the orthogonality of the crystallographic axes is preserved.

Structural and thermoelectric properties of TMGa3 (TM = Fe, Co) thin films

Based on chemically synthesized powders of FeGa3, CoGa3, as well as of a Fe0.75Co0.25Ga3 solid solution, thin films (typical thickness 40 nm) were fabricated by flash evaporation onto various substrates held at ambient temperature. In this way, the chemical composition of the powders could be transferred one-to-one to the films as demonstrated by Rutherford backscattering experiments. The relatively low deposition temperature necessary for conserving the composition leads, however, to 'X-ray amorphous' film structures with immediate consequences on their transport properties: A practically temperature-independent electrical resistivity of ρ = 200 μΩ·cm for CoGa3 and an electrical resistivity of about 600 μΩ·cm with a small negative temperature dependence for FeGa3. The observed values and temperature dependencies are typical of high-resistivity metallic glasses. This is especially surprising in the case of FeGa3, which as crystalline bulk material exhibits a semiconducting behavior, though with a small gap of 0.3 eV. Also the thermoelectric performance complies with that of metallic glasses: Small negative Seebeck coefficients of the order of -6 μV/K at 300 K with almost linear temperature dependence in the range 10 K ≤ T ≤ 300 K.

Synthesis and thermoelectric properties of Re3As6.6In0.4 with Ir3Ge7 crystal structure

The Re3As7- x In x solid solution was prepared for x ≤ 0.5 by heating the elements in stoichiometric ratios in evacuated silica tubes at 1073 K. It crystallizes with the Ir3Ge7 crystal structure, space group Im-3m, with a unit-cell parameter a ranging from 8.716 to 8.747 Å. The crystal structure and properties were investigated for a composition with x = 0.4. It is shown that indium substitutes arsenic exclusively at one crystallographic site, such that the As-As dumbbells with d As-As = 2.54 Å remain intact. Re3As6.6In0.4 behaves as a bad metal or heavily doped semiconductor, with electrons being the dominant charge carriers. It possesses high values of Seebeck coefficient and low thermal conductivity, but relatively low electrical conductivity, which leads to rather low values of the thermoelectric figure of merit.

Clathrates and semiclathrates of Type-I: crystal structure and superstructures

The review surveys the crystal chemistry of inorganic compounds belonging to the structure type of clathrate-I. The compounds of this family exhibit an unexpected variety of both chemical composition and features of the crystal structure. The basic crystal structure of clathrate-I and different variants of its modification, such as siting, position splitting, and superstructure formation including transformation to semiclathrates, are considered in terms of the group-subgroup relationship.

Homo- and heterovalent substitutions in the new clathrates I Si30P16Te(8-x)Se(x) and Si(30+x)P(16-x)Te(8-x)Br(x): synthesis, crystal structure, and thermoelectric properties

The new cationic clathrates I Si(30)P(16)Te(8-x)Se(x) and Si(30+x)P(16-x)Te(8-x)Br(x) were synthesized by the standard ampule technique. The Si(30)P(16)Te(8-x)Se(x) (x = 0-2.3) clathrates crystallize in the cubic space group Pm3̅n with the unit cell parameter a ranging from 9.9382(2) to 9.9696(1) Å. In the case of the Si(30+x)P(16-x)Te(8-x)Br(x) (x = 1-6.4) clathrates, the lattice parameter varies from 9.9720(8) to 10.0405(1) Å; at lower Si/P ratios (x = 1-3) the ordering of bromine atoms induces the splitting of the guest positions and causes the transformation from the space group Pm3n to Pm3. Irrespective of the structure peculiarities, the normal temperature motion of the guest atoms inside the oversized cages of the framework is observed. The title clathrates possess very low thermal expansion coefficients ranging from 6.6 × 10(-6) to 1.0 × 10(-5) K(-1) in the temperature range of 298-1100 K. The characteristic Debye temperature is about 490 K. Measurements of the electrical resistivity and thermopower showed typical behavior of p-type thermally activated semiconductors, whereas the temperature behavior of the thermal conductivity is glasslike and in general consistent with the PGEC concept. The highest value of the thermoelectric figure of merit (ZT = 0.1) was achieved for the Br-bearing clathrate Si(32.1(2))P(13.9(2))Te(6.6(2))Br(1.0(1)) at 750 K.

Cationic clathrate I Si(46-x)P(x)Te(y) (6.6(1) < or = y < or = 7.5(1), x < or = 2y): crystal structure, homogeneity range, and physical properties

A new cationic clathrate I Si(46-x)P(x)Te(y) (6.6(1) < or = y < or = 7.5(1), x < or = 2y at 1375 K) was synthesized from the elements and characterized by X-ray powder diffraction, thermal analysis, scanning electron microscopy, wavelength dispersive X-ray spectroscopy (WDXS), neutron powder diffraction, and (31)P NMR spectroscopy. The thermal behaviors of the magnetic susceptibility and resistivity were investigated as well. Si(46-x)P(x)Te(y) reveals a wide homogeneity range due to the presence of vacancies in the tellurium guest positions inside the smaller cage of the clathrate I structure. The vacancy ordering in the structure of Si(46-x)P(x)Te(y) causes the change of space group from Pm3n (ideal clathrate I) to Pm3 accompanied by the redistribution of P and Si atoms over different framework positions. Neutron powder diffraction confirmed that P atoms preferably form a cage around the vacancy-containing tellurium guest position. Additionally, (31)P NMR spin-spin relaxation experiments revealed the presence of sites with different coordination of phosphorus atoms. Precise determination of the composition of Si(46-x)P(x)Te(y) by WDXS showed slight but noticeable deviation (x < or = 2y) of phosphorus content from the Zintl counting scheme (x = 2y). The compound is diamagnetic while resistivity measurements show activated behavior or that of heavily doped semiconductors. Thermal analysis revealed high stability of the investigated clathrate: Si(46-x)P(x)Te(y) melts incongruently at approximately 1460 K in vacuum and is stable in air against oxidation up to 1295 K.

The first silicon-based cationic clathrate III with high thermal stability: Si172-xPxTey (x=2y, y>20)

A new representative of a very rare clathrate III family, Si130P42Te21, has been synthesized from the elements. It crystallizes in the tetragonal space group P4(2)/mnm (no. 136) with the unit cell parameters a=19.2632(3) angstroms, c=10.0706(2) angstroms. Single crystal X-ray diffraction and solid state 31P NMR revealed a non-random distribution of phosphorus atoms over the framework positions. The crystal structure features a peculiar packing of large polyhedra Te@(Si/P)(n) never observed before for cationic clathrates. Despite the structural complexity, the composition of the novel clathrate Is in accordance with the Zintl rule, which was confirmed by a combination of optical metallography, scanning electron microscopy (SEM) and wavelength dispersive X-ray spectroscopy (WDXS), as well as by diamagnetic and semiconducting behavior of the synthesized phase. Clathrate Si130P42Te21 exhibits the highest reported thermal stability for this class of materials, it decomposes at 1510 K. This opens new perspectives for the creation of clathrate-based materials for high-temperature applications.