Collective character of spin excitations in a system of Mn2+ spins coupled to a two-dimensional electron gas

We have studied the low energy spin excitations in n-type CdMnTe based dilute magnetic semiconductor quantum wells. For magnetic fields for which the energies for the excitation of free carriers and Mn spins are almost identical, an anomalously large Knight shift is observed. Our findings suggest the existence of a magnetic-field-induced ferromagnetic order in these structures, which is in agreement with recent theoretical predictions [Phys. Rev. Lett. 91, 077202 (2003)]].

Resistively detected nuclear magnetic resonance in the quantum hall regime: possible evidence for a Skyrme crystal

Resistively detected nuclear magnetic resonance measurements have been performed on a high mobility heterostructure in the quantum Hall regime. At millikelvin temperatures the nuclear resonances are observed in the vicinity of various integer and fractional filling factors without previous dynamic nuclear polarization. Near nu = 1, the observed large enhancement of the resonance amplitude accompanied by a reduction of T1 strongly suggests a greatly increased coupling between the electronic and nuclear spin systems. This is consistent with the proposed coupling of the nuclear spin system to the Goldstone mode of the Skyrme crystal.

Pauli paramagnetism and Landau level crossing in a modulation doped CdMnTe/CdMgTe quantum well

Electrical transport measurements are reported on a 2DEG in a CdMnTe quantum well structure. The amplitude of the Shubnikov-de Haas oscillations show a distinct beating pattern with nodes corresponding to coincidences between the spin splitting and a half integer multiple of the cyclotron energy. The observed pattern of nodes is a direct consequence of the large Pauli paramagnetism induced by the s-d exchange interaction between the spins of electronic states and the localized magnetic moments.

Magneto infrared absorption in high electron density GaAs quantum wells

Magneto infrared absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.

Metal-insulator oscillations in a two-dimensional electron-hole system

The electrical transport properties of a bipolar InAs/GaSb system have been studied in a magnetic field. The resistivity oscillates between insulating and metallic behavior while the quantum Hall effect shows a digital character oscillating from 0 to 1 conductance quantum e(2)/h. The insulating behavior is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.