Carrier-controlled ferromagnetism in transparent oxide semiconductors

The search for an ideal magnetic semiconductor with tunable ferromagnetic behaviour over a wide range of doping or by electrical gating is being actively pursued as a major step towards realizing spin electronics. A magnetic semiconductor having a high Curie temperature, capable of independently controlled carrier density and magnetic doping, is crucial for developing spin-based multifunctional devices. Cr-doped In(2)O(3) is such a unique system, where the electrical and magnetic behaviour-from ferromagnetic metal-like to ferromagnetic semiconducting to paramagnetic insulator-can be controllably tuned by the defect concentration. An explicit dependence of magnetic interaction leading to ferromagnetism on the carrier density is shown. A carrier-density-dependent high Curie temperature of 850-930 K has been measured, in addition to the observation of clear magnetic domain structures in these films. Being optically transparent with the above optimal properties, Cr-doped In(2)O(3) emerges as a viable candidate for the development of spin electronics.

Coexistence of ferromagnetism and superconductivity in Ni/Bi bilayers

In spite of a lack of superconductivity in bulk crystalline Bi, thin film Bi deposited on thin Ni underlayers are strong-coupled superconductors below approximately 4 K. We unambiguously demonstrate that by tuning the Ni thickness the competition between ferromagnetism and superconductivity in the Ni/Bi can be tailored. For a narrow range of Ni thicknesses, the coexistence of both a superconducting energy gap and conduction electron spin polarization are visible within the Ni side of the Ni/Bi bilayers, independent of any particular theoretical model. We believe that this represents one of the clearest observations of superconductivity and ferromagnetism coexisting.

Band structure and density of States effects in co-based magnetic tunnel junctions

Utilizing Co/Al(2)O(3)/Co magnetic tunnel junctions with Co electrodes of different crystalline phases, a clear relationship between electrode crystal structure and junction transport properties is presented. For junctions with one fcc(111) textured and one polycrystalline (polyphase and polydirectional) Co electrode, a strong asymmetry is observed in the magnetotransport properties, while when both electrodes are polycrystalline the magnetotransport is essentially symmetric. These observations are successfully explained within a model based on ballistic tunneling between the calculated band structures (density of states) of fcc-Co and hcp-Co.

Measuring the spin polarization of a metal with a superconducting point contact

A superconducting point contact is used to determine the spin polarization at the Fermi energy of several metals. Because the process of supercurrent conversion at a superconductor-metal interface (Andreev reflection) is limited by the minority spin population near the Fermi surface, the differential conductance of the point contact can reveal the spin polarization of the metal. This technique has been applied to a variety of metals where the spin polarization ranges from 35 to 90 percent: Ni0.8Fe0.2, Ni, Co, Fe, NiMnSb, La0.7Sr0.3MnO3, and CrO2.