51
|
Astakhov GV, Dzhioev RI, Kavokin KV, Korenev VL, Lazarev MV, Tkachuk MN, Kusrayev YG, Kiessling T, Ossau W, Molenkamp LW. Suppression of electron spin relaxation in Mn-doped GaAs. PHYSICAL REVIEW LETTERS 2008; 101:076602. [PMID: 18764562 DOI: 10.1103/physrevlett.101.076602] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2007] [Indexed: 05/26/2023]
Abstract
We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the antiferromagnetic exchange interaction between a Mn ion and a bound hole results in a partial compensation of these fluctuating fields, leading to the enhanced spin memory.
Collapse
|
52
|
Brillante A, Bilotti I, Della Valle RG, Venuti E, Milita S, Dionigi C, Borgatti F, Lazar AN, Biscarini F, Mas-Torrent M, Oxtoby NS, Crivillers N, Veciana J, Rovira C, Leufgen M, Schmidt G, Molenkamp LW. The four polymorphic modifications of the semiconductor dibenzo-tetrathiafulvalene. CrystEngComm 2008. [DOI: 10.1039/b810993a] [Citation(s) in RCA: 57] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
|
53
|
König M, Wiedmann S, Brüne C, Roth A, Buhmann H, Molenkamp LW, Qi XL, Zhang SC. Quantum Spin Hall Insulator State in HgTe Quantum Wells. Science 2007; 318:766-70. [PMID: 17885096 DOI: 10.1126/science.1148047] [Citation(s) in RCA: 1271] [Impact Index Per Article: 74.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nanometers, the insulating regime showed the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nanometers), the nominally insulating regime showed a plateau of residual conductance close to 2e(2)/h, where e is the electron charge and h is Planck's constant. The residual conductance was independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance was destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nanometers, was also independently determined from the magnetic field-induced insulator-to-metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
Collapse
|
54
|
Wenisch J, Gould C, Ebel L, Storz J, Pappert K, Schmidt MJ, Kumpf C, Schmidt G, Brunner K, Molenkamp LW. Control of magnetic anisotropy in (Ga,Mn)as by lithography-induced strain relaxation. PHYSICAL REVIEW LETTERS 2007; 99:077201. [PMID: 17930919 DOI: 10.1103/physrevlett.99.077201] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2006] [Indexed: 05/25/2023]
Abstract
We report control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using reciprocal space mapping by x-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained.
Collapse
|
55
|
Astakhov GV, Koudinov AV, Kavokin KV, Gagis IS, Kusrayev YG, Ossau W, Molenkamp LW. Exciton spin decay modified by strong electron-hole exchange interaction. PHYSICAL REVIEW LETTERS 2007; 99:016601. [PMID: 17678176 DOI: 10.1103/physrevlett.99.016601] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2006] [Indexed: 05/16/2023]
Abstract
We study exciton spin decay in the regime of strong electron-hole exchange interaction, which occurs in a wide variety of semiconductor nanostructures. In this regime the electron spin precession is restricted within a sector formed by the external magnetic field and the effective exchange fields triggered by random spin flips of the hole. Using Hanle effect measurements, we demonstrate that this mechanism dominates our experiments in CdTe/(Cd,Mg)Te quantum wells. We present calculations that provide a consistent description of the experimental results, which is supported by independent measurements of the parameters entering the model.
Collapse
|
56
|
Pappert K, Schmidt MJ, Hümpfner S, Rüster C, Schott GM, Brunner K, Gould C, Schmidt G, Molenkamp LW. Magnetization-switched metal-insulator transition in a (Ga,Mn)as tunnel device. PHYSICAL REVIEW LETTERS 2006; 97:186402. [PMID: 17155562 DOI: 10.1103/physrevlett.97.186402] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2006] [Indexed: 05/12/2023]
Abstract
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly tune the system into the insulating or metallic state by changing the magnetization.
Collapse
|
57
|
Inoue JI, Kato T, Ishikawa Y, Itoh H, Bauer GEW, Molenkamp LW. Vertex corrections to the anomalous Hall effect in spin-polarized two-dimensional electron gases with a Rashba spin-orbit interaction. PHYSICAL REVIEW LETTERS 2006; 97:046604. [PMID: 16907603 DOI: 10.1103/physrevlett.97.046604] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2006] [Indexed: 05/11/2023]
Abstract
We study the effect of disorder on the intrinsic anomalous Hall conductivity in a magnetic two-dimensional electron gas with a Rashba-type spin-orbit interaction. We find that anomalous Hall conductivity vanishes unless the lifetime is spin-dependent, similar to the spin Hall conductivity in the nonmagnetic system. In addition, we find that the spin Hall conductivity does not vanish in the presence of magnetic scatterers.
Collapse
|
58
|
Gould C, Slobodskyy A, Supp D, Slobodskyy T, Grabs P, Hawrylak P, Qu F, Schmidt G, Molenkamp LW. Remanent zero field spin splitting of self-assembled quantum dots in a paramagnetic host. PHYSICAL REVIEW LETTERS 2006; 97:017202. [PMID: 16907404 DOI: 10.1103/physrevlett.97.017202] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2005] [Indexed: 05/11/2023]
Abstract
We report on the observation of a finite spin splitting at zero magnetic field in resonant tunneling experiments on CdSe self-assembled quantum dots in a (Zn,Be,Mn)Se barrier. This is remarkable since bulk II-VI dilute magnetic semiconductors are paramagnets. Our experiment may be viewed as tunneling through a single magnetic polaron, where the carriers contained inside the dot act to mediate an effective ferromagnetic interaction between Mn ions in their vicinity. The effect is observable up to relatively high temperatures, which we tentatively ascribe to a feedback mechanism with the electrical current, previously predicted theoretically.
Collapse
|
59
|
Rönnburg KE, Mohler E, Roskos HG, Ortner K, Becker CR, Molenkamp LW. Motional-narrowing-type dephasing of electron and hole spins of itinerant excitons in magnetically doped II-VI bulk semiconductors. PHYSICAL REVIEW LETTERS 2006; 96:117203. [PMID: 16605859 DOI: 10.1103/physrevlett.96.117203] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/27/2005] [Indexed: 05/08/2023]
Abstract
Time-resolved optical spin-quantum-beat measurements performed on magnetically doped II-VI bulk semiconductors reveal an increase of the electron spin dephasing time with rising temperature typical for motional narrowing. With the dephasing being notably faster than in undoped II-VI semiconductors, the magnetic dopants must play a key role, modifying the known dephasing mechanisms and introducing new ones. Focusing on the latter, we theoretically explore the spin dephasing channel arising from magnetization fluctuations sampled by the itinerant excitons. This mechanism suffices to explain quantitatively the results of our time-resolved Faraday-rotation experiments on optically excited Cd(1-x)Mn(x)Te which we present here as a function of magnetic field, temperature and manganese dopant density. In addition to electron spin-quantum beats, some of our experiments reveal hole spin beats as well.
Collapse
|
60
|
König M, Tschetschetkin A, Hankiewicz EM, Sinova J, Hock V, Daumer V, Schäfer M, Becker CR, Buhmann H, Molenkamp LW. Direct observation of the Aharonov-Casher phase. PHYSICAL REVIEW LETTERS 2006; 96:076804. [PMID: 16606124 DOI: 10.1103/physrevlett.96.076804] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2005] [Indexed: 05/08/2023]
Abstract
Ring structures fabricated from HgTe/HgCdTe quantum wells have been used to study Aharonov-Bohm type conductance oscillations as a function of Rashba spin-orbit splitting strength. We observe nonmonotonic phase changes indicating that an additional phase factor modifies the electron wave function. We associate these observations with the Aharonov-Casher effect. This is confirmed by comparison with numerical calculations of the magnetoconductance for a multichannel ring structure within the Landauer-Büttiker formalism.
Collapse
|
61
|
Astakhov GV, Kiessling T, Platonov AV, Slobodskyy T, Mahapatra S, Ossau W, Schmidt G, Brunner K, Molenkamp LW. Circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. PHYSICAL REVIEW LETTERS 2006; 96:027402. [PMID: 16486639 DOI: 10.1103/physrevlett.96.027402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2005] [Indexed: 05/06/2023]
Abstract
We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in the absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self-assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.
Collapse
|
62
|
Scheibner R, Buhmann H, Reuter D, Kiselev MN, Molenkamp LW. Thermopower of a Kondo spin-correlated quantum dot. PHYSICAL REVIEW LETTERS 2005; 95:176602. [PMID: 16383850 DOI: 10.1103/physrevlett.95.176602] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2004] [Indexed: 05/05/2023]
Abstract
The thermopower of a Kondo-correlated gate-defined quantum dot is studied using a current heating technique. In the presence of spin correlations, the thermopower shows a clear deviation from the semiclassical Mott relation between thermopower and conductivity. The strong thermopower signal indicates a significant asymmetry in the spectral density of states of the Kondo resonance with respect to the Fermi energies of the reservoirs. The observed behavior can be explained within the framework of an Anderson-impurity model.
Collapse
|
63
|
Kimel AV, Astakhov GV, Kirilyuk A, Schott GM, Karczewski G, Ossau W, Schmidt G, Molenkamp LW, Rasing T. Observation of giant magnetic linear dichroism in (Ga, Mn) As. PHYSICAL REVIEW LETTERS 2005; 94:227203. [PMID: 16090433 DOI: 10.1103/physrevlett.94.227203] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2004] [Indexed: 05/03/2023]
Abstract
Giant magnetic linear dichroism (MLD) is observed in the ferromagnetic semiconductor Ga(0.98)Mn(0.02)As. The contribution to this effect induced by the spontaneous magnetization can be clearly identified by azimuthal dependencies. The spectral dependence of the effect in the range from 1.4 to 2.4 eV shows that the MLD induced by the spontaneous magnetization is strongly enhanced for excitations from the electronic states that are responsible for the ferromagnetism in this material. This spectral sensitivity and the size of the effect makes MLD a powerful tool for the study of (III, Mn)V alloys and similar novel ferromagnetic semiconductors.
Collapse
|
64
|
Rüster C, Gould C, Jungwirth T, Sinova J, Schott GM, Giraud R, Brunner K, Schmidt G, Molenkamp LW. Very large tunneling anisotropic magnetoresistance of a (Ga,Mn)As/GaAs/(Ga,Mn)As stack. PHYSICAL REVIEW LETTERS 2005; 94:027203. [PMID: 15698223 DOI: 10.1103/physrevlett.94.027203] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2004] [Indexed: 05/24/2023]
Abstract
We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.
Collapse
|
65
|
Gould C, Rüster C, Jungwirth T, Girgis E, Schott GM, Giraud R, Brunner K, Schmidt G, Molenkamp LW. Tunneling anisotropic magnetoresistance: a spin-valve-like tunnel magnetoresistance using a single magnetic layer. PHYSICAL REVIEW LETTERS 2004; 93:117203. [PMID: 15447375 DOI: 10.1103/physrevlett.93.117203] [Citation(s) in RCA: 40] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2004] [Indexed: 05/24/2023]
Abstract
We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.
Collapse
|
66
|
Kimel AV, Astakhov GV, Schott GM, Kirilyuk A, Yakovlev DR, Karczewski G, Ossau W, Schmidt G, Molenkamp LW, Rasing T. Picosecond dynamics of the photoinduced spin polarization in epitaxial (Ga,Mn)as films. PHYSICAL REVIEW LETTERS 2004; 92:237203. [PMID: 15245193 DOI: 10.1103/physrevlett.92.237203] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2003] [Indexed: 05/24/2023]
Abstract
Static and time-resolved magneto-optical spectra of the ferromagnetic semiconductor (Ga,Mn)As show that a pulsed photoexcitation with a fluence of 10 microJ/cm(2) is equivalent to the application of an external magnetic field of about 1 mT, which relaxes with a decay time of 30 ps. This relaxation is attributed to the spin relaxation of electrons in the conduction band and is found to be not affected by interactions with Mn ions.
Collapse
|
67
|
Schmidt G, Gould C, Grabs P, Lunde AM, Richter G, Slobodskyy A, Molenkamp LW. Spin injection in the nonlinear regime: band bending effects. PHYSICAL REVIEW LETTERS 2004; 92:226602. [PMID: 15245248 DOI: 10.1103/physrevlett.92.226602] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2002] [Indexed: 05/24/2023]
Abstract
We report on electrical spin-injection measurements into a nonmagnetic semiconductor in the nonlinear regime. For voltage drops across the interface larger than a few mV the spin-injection efficiency decreases strongly. The effect is caused by repopulation of the minority spin level in the magnetic semiconductor due to band bending at the interface.
Collapse
|
68
|
Rüster C, Borzenko T, Gould C, Schmidt G, Molenkamp LW, Liu X, Wojtowicz TJ, Furdyna JK, Yu ZG, Flatté ME. Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)as wires with nanoconstrictions. PHYSICAL REVIEW LETTERS 2003; 91:216602. [PMID: 14683324 DOI: 10.1103/physrevlett.91.216602] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2003] [Indexed: 05/24/2023]
Abstract
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%, which can be understood from spin accumulation. In samples where, due to depletion at the constriction, a tunnel barrier is formed, we observe a magnetoresistance of up to 2000%.
Collapse
|
69
|
Slobodskyy A, Gould C, Slobodskyy T, Becker CR, Schmidt G, Molenkamp LW. Voltage-controlled spin selection in a magnetic resonant tunneling diode. PHYSICAL REVIEW LETTERS 2003; 90:246601. [PMID: 12857209 DOI: 10.1103/physrevlett.90.246601] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2003] [Indexed: 05/24/2023]
Abstract
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.
Collapse
|
70
|
Yakovlev DR, Platonov AV, Ivchenko EL, Kochereshko VP, Sas C, Ossau W, Hansen L, Waag A, Landwehr G, Molenkamp LW. Hidden in-plane anisotropy of interfaces in Zn(Mn)Se /BeTe quantum wells with a type-II band alignment. PHYSICAL REVIEW LETTERS 2002; 88:257401. [PMID: 12097127 DOI: 10.1103/physrevlett.88.257401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2001] [Indexed: 05/23/2023]
Abstract
Circularly and linearly polarized radiation due to spatially indirect optical transitions is studied in semimagnetic (Zn,Mn)Se/BeTe and nonmagnetic ZnSe/BeTe quantum-well structures with a type-II band alignment. Because of the giant in-plane anisotropy of the optical matrix elements related to a particular interface, complete spin orientation of photocarriers induced by magnetic fields leads not to purely circular but instead to elliptical polarization of the luminescence. From comparison between theory and experiment the parameter of optical anisotropy of a ZnSe/BeTe interface is evaluated. The developed theoretical approach can be applied for the large class of nanostructures revealing optical anisotropy.
Collapse
|
71
|
Schmidt G, Richter G, Grabs P, Gould C, Ferrand D, Molenkamp LW. Large magnetoresistance effect due to spin injection into a nonmagnetic semiconductor. PHYSICAL REVIEW LETTERS 2001; 87:227203. [PMID: 11736423 DOI: 10.1103/physrevlett.87.227203] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2000] [Revised: 06/19/2001] [Indexed: 05/23/2023]
Abstract
A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a nonmagnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the nonmagnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the nonmagnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
Collapse
|
72
|
Koonen JJ, Buhmann H, Molenkamp LW. Probing the potential landscape inside a two-dimensional electron Gas. PHYSICAL REVIEW LETTERS 2000; 84:2473-2476. [PMID: 11018913 DOI: 10.1103/physrevlett.84.2473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/23/1999] [Indexed: 05/23/2023]
Abstract
We report direct observations of the scattering potentials in a two-dimensional electron gas using electron-beam diffraction experiments. The diffracting objects are local density fluctuations caused by spatial and charge-state distribution of donors in the GaAs-(Al,Ga)As heterostructures. The scatterers can be manipulated externally by sample illumination or by cooling the sample down under depleted conditions.
Collapse
|
73
|
Molenkamp LW, Flensberg K, Kemerink M. Scaling of the Coulomb Energy Due to Quantum Fluctuations in the Charge on a Quantum Dot. PHYSICAL REVIEW LETTERS 1995; 75:4282-4285. [PMID: 10059865 DOI: 10.1103/physrevlett.75.4282] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|
74
|
Lous EJ, Blom PW, Molenkamp LW, Leeuw DM. Schottky contacts on a highly doped organic semiconductor. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:17251-17254. [PMID: 9978749 DOI: 10.1103/physrevb.51.17251] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
|
75
|
Godijn SF, Nazarov YV, Harmans CJ, Mooij JE, Molenkamp LW, Foxon CT. Resonant tunneling through two discrete energy states. PHYSICAL REVIEW LETTERS 1995; 74:4702-4705. [PMID: 10058577 DOI: 10.1103/physrevlett.74.4702] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
|