Topological Imbert-Fedorov Shift in Weyl Semimetals

The Goos-Hänchen (GH) shift and the Imbert-Fedorov (IF) shift are optical phenomena which describe the longitudinal and transverse lateral shifts at the reflection interface, respectively. Here, we predict the GH and IF shifts in Weyl semimetals (WSMs)-a promising material harboring low energy Weyl fermions, a massless fermionic cousin of photons. Our results show that the GH shift in WSMs is valley independent, which is analogous to that discovered in a 2D relativistic material-graphene. However, the IF shift has never been explored in nonoptical systems, and here we show that it is valley dependent. Furthermore, we find that the IF shift actually originates from the topological effect of the system. Experimentally, the topological IF shift can be utilized to characterize the Weyl semimetals, design valleytronic devices of high efficiency, and measure the Berry curvature.

Theory for electric dipole superconductivity with an application for bilayer excitons

Exciton superfluid is a macroscopic quantum phenomenon in which large quantities of excitons undergo the Bose-Einstein condensation. Recently, exciton superfluid has been widely studied in various bilayer systems. However, experimental measurements only provide indirect evidence for the existence of exciton superfluid. In this article, by viewing the exciton in a bilayer system as an electric dipole, we derive the London-type and Ginzburg-Landau-type equations for the electric dipole superconductors. By using these equations, we discover the Meissner-type effect and the electric dipole current Josephson effect. These effects can provide direct evidence for the formation of the exciton superfluid state in bilayer systems and pave new ways to drive an electric dipole current.

Detection of a superconducting phase in a two-atom layer of hexagonal Ga film grown on semiconducting GaN(0001)

The recent observation of the superconducting state at atomic scale has motivated the pursuit of exotic condensed phases in two-dimensional (2D) systems. Here we report on a superconducting phase in two-monolayer crystalline Ga films epitaxially grown on wide-band-gap semiconductor GaN(0001). This phase exhibits a hexagonal structure and only 0.552 nm in thickness, nevertheless, brings about a superconducting transition temperature Tc as high as 5.4 K, confirmed by in situ scanning tunneling spectroscopy and ex situ electrical magnetotransport and magnetization measurements. The anisotropy of critical magnetic field and Berezinski-Kosterlitz-Thouless-like transition are observed, typical for the 2D superconductivity. Our results demonstrate a novel platform for exploring atomic-scale 2D superconductors, with great potential for understanding the interface superconductivity.

Dephasing effect on backscattering of helical surface states in 3D topological insulators

We analyze the dephasing effect on the backscattering behavior of the helical surface states in 3D topological insulators. We show that the combination of dephasing and impurity scattering can cause backscattering in the helical states. Especially for the charge impurity case, the backscattering cross section becomes extremely large around the Dirac point. This large backscattering behavior can lead to the anomalous "gaplike" features found in recent experiments [T. Sato et al., Nat. Phys. 7, 840 (2011)].

Transport discovery of emerging robust helical surface States in Z2 = 0 systems

We study the possibility of realizing robust helical surface states in Z(2) = 0 systems. We find that the combination of anisotropy and finite-size confinement leads to the emergence of robust helical edge states in both two-dimensional and three-dimensional Z(2) = 0 systems. By investigating an anisotropic Bernevig-Hughes-Zhang model in a finite sample, we demonstrate that the transport manifestation of the surface states is robust against nonmagnetic disorder, resembling that of a Z(2) = 1 phase. Notably, the effective energy gap of the robust helical states can be efficiently engineered, allowing for potential applications as valley filters and valley valves. The realization of emerging robust helical surface states in realistic materials is also discussed.

Spin-current Seebeck effect in quantum dot systems

We first bring up the concept of the spin-current Seebeck effect based on a recent experiment (Vera-Marun et al 2012 Nature Phys. 8 313), and investigate the spin-current Seebeck effect in quantum dot (QD) systems. Our results show that the spin-current Seebeck coefficient S is sensitive to different polarization states of the QD, and therefore can be used to detect the polarization state of the QD and monitor the transitions between different polarization states of the QD. The intradot Coulomb interaction can greatly enhance S due to the stronger polarization of the QD. By using the parameters for a typical QD whose intradot Coulomb interaction U is one order of magnitude larger than the linewidth Γ, we demonstrate that the maximum value of S can be enhanced by a factor of 80. On the other hand, for a QD whose Coulomb interaction is negligible, we show that one can still obtain a large S by applying an external magnetic field.

Universal scheme to generate metal-insulator transition in disordered systems

We propose a scheme to generate metal-insulator transition in the random binary layer (RBL) model, which is constructed by randomly assigning two types of layers along the longitudinal direction. Based on a tight-binding Hamiltonian, the localization length is calculated for a variety of RBLs with different cross section geometries by using the transfer-matrix method. Both analytical and numerical results show that a band of extended states could appear in the quasi-one-dimensional RBLs and the systems behave as metals by properly tuning the model parameters, due to the existence of a completely ordered subband, leading to a metal-insulator transition in parameter space. Furthermore, the extended states are irrespective of the diagonal and off-diagonal disorder strengths. Our results can be generalized to two- and three-dimensional disordered systems with arbitrary layer structures, and may be realized in Bose-Einstein condensates.

A disorder induced field effect transistor in bilayer and trilayer graphene

We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene and gapped bilayer graphene.

Transient heat generation in a quantum dot under a step-like pulse bias

We study the transient heat generation in a quantum dot system driven by a step-like or a square-shaped pulse bias. We find that a periodically oscillating heat generation arises after adding the sudden bias. One particularly surprising result is that there exists a heat absorption from the zero-temperature phonon subsystem. Thus the phonon population in non-equilibrium can be less than that of the equilibrium electron-phonon system. In addition, we also ascertain the optimal conditions for the operation of a quantum dot with the minimum heat generation.

Three-dimensional topological insulator in a magnetic field: chiral side surface states and quantized Hall conductance

Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field are investigated. It is found that chiral surface states parallel to the magnetic field are responsible for the quantized Hall (QH) conductance (2n + 1)e²/h multiplied by the number of Dirac cones. Due to the two-dimensional nature of the surface states, the robustness of the QH conductance against impurity scattering is determined by the oddness and evenness of the Dirac cone number. An experimental setup for transport measurement is proposed.

Mott physics and topological phase transition in correlated dirac fermions

We investigate the interplay between the strong correlation and the spin-orbit coupling in the Kane-Mele-Hubbard model and obtain the qualitative phase diagram via the variational cluster approach. We identify, through an increase of the Hubbard U, the transition from the topological band insulator to either the spin liquid phase or the easy-plane antiferromagnetic insulating phase, depending on the strength of the spin-orbit coupling. A nontrivial evolution of the bulk bands in the topological quantum phase transition is also demonstrated.

Trapping and releasing light by mechanical implementation in metamaterial waveguides

We show that light trapping and releasing can be switched by a mechanic tuning effect in metamaterial waveguides. The transition mechanism between the trapping and releasing states relies on the synergetic effect of the local Bragg reflection and cavity resonance in the waveguides. As a proof-of-concept demonstration, a heterostructured metamaterial waveguide comprised of dielectric claddings and a tapered metamaterial core formed by arrays of metal slats is analytically and numerically investigated. The spatial separation of the trapped light with various frequencies and the transition between the trapping and releasing states can be predicted by a "rainbow equation." The proposed light trapping and releasing scheme based on the mechanical implementation of waveguide geometrical parameters can be exploited to develop opto-mechanical devices for slow light technology.

Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃

We report that Bi₂Se₃ thin films can be epitaxially grown on SrTiO₃ substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena.

CT-invariant quantum spin Hall effect in ferromagnetic graphene

We predict a quantum spin Hall effect (QSHE) in ferromagnetic graphene under a magnetic field. Unlike the previous QSHE, this QSHE appears in the absence of spin-orbit interaction and thus, is arrived at from a different physical origin. The previous QSHE is protected by the time-reversal (T) invariance. This new QSHE is protected by CT invariance, where C is the charge conjugation operation. Because of this QSHE, the longitudinal resistance exhibits quantum plateaus. The plateau values are at 1/2, 1/6, 3/28, ..., (in units of h/e2), depending on the filling factors of the spin-up and spin-down carriers. The spin Hall resistance is also investigated and is found to be robust against the disorder.

Quantum transport through a graphene nanoribbon-superconductor junction

We study the electron transport through a graphene nanoribbon-superconductor junction. Both zigzag and armchair edge graphene nanoribbons are considered, and the effects of the magnetic field and disorder on the transport property are investigated. By using the tight-binding model and the non-equilibrium Green's function method, the expressions of the current, conductance, normal tunneling coefficient and Andreev reflection coefficient are obtained. For a clean system and at zero magnetic field, the linear conductance increases approximately in a linear fashion with the on-site energy. In the presence of a magnetic field and a moderate disorder, the linear conductance exhibits plateau structures for both armchair and zigzag edges. The plateau values increase with the width of the graphene ribbon. With a wide sample width, a saturated plateau value of |ν|e(2)/h emerges at the filling factor ν. For a small filling factor, the conductance can reach the saturated value at a small width, but for a high filling factor it requires to have a quite wide sample width to reach the saturated value. In particular, the Andreev reflection coefficient is always at 0.5 after reaching the saturated value, independent of any system parameters. In addition, we also consider the finite bias case, in which the Andreev reflection coefficient and normal tunneling coefficient are studied.

Topological insulator: a new quantized spin Hall resistance robust to dephasing

The dephasing effect on the quantum spin Hall effect (QSHE) is studied. Without dephasing, the longitudinal resistance in a QSHE system exhibits the quantum plateaus. We find that these quantum plateaus are robust against the normal dephasing but fragile with the spin dephasing. Thus, these quantum plateaus survive only in mesoscopic samples. Moreover, the longitudinal resistance increases linearly with the sample length but is insensitive to the sample width. These characters are in excellent agreement with the recent experimental results [Science 318, 766 (2007)10.1126/science.1148047]. In addition, we define a new spin Hall resistance that also exhibits quantum plateaus. In particular, these plateaus are robust against any type of dephasing and therefore, survive in macroscopic samples and better reflect the topological nature of QSHE.

Localization and the Kosterlitz-Thouless transition in disordered graphene

We investigate disordered graphene with strong long-range impurities. Contrary to the common belief that delocalization should persist in such a system against any disorder, as the system is expected to be equivalent to a disordered two-dimensional Dirac fermionic system, we find that states near the Dirac points are localized for sufficiently strong disorder (therefore inevitable intervalley scattering) and the transition between the localized and delocalized states is of Kosterlitz-Thouless type. Our results show that the transition originates from bounding and unbounding of local current vortices.

Josephson effect for photons in two weakly linked microcavities

We describe an optical system that allows for direct observation of the photonic Josephson effects in two weakly linked microcavities containing ultracold two-level atoms. We show that, by moving the ultracold atoms within one cavity, we could simulate an analogous superconducting circuit and realize both the alternating- and direct-current (ac and dc) photonic Josephson effects. This provides a strategy for constructing novel interference devices of coherent photons and enables new investigations of the effect of many-body physics in strongly coupled atom-cavity systems.

An unusual magnetoresistance effect in the heterojunction structure of an ultrathin single-crystal Pb film on silicon substrate

Superconductor films on semiconductor substrates have drawn much attention recently since the derived superconductor-based electronics have been shown to be promising for future data processing and storage technologies. By growing atomically uniform single-crystal epitaxial Pb films of several nanometers thick on Si wafers to form a sharp superconductor-semiconductor heterojunction, we have obtained an unusual magnetoresistance effect when the Pb film is superconducting. In addition to the large fundamental interest in this effect, the simple structure, and compatibility and scalability with current Si-based semiconductor technology offer a great opportunity for integrating superconducting circuits and detectors in a single chip.

Quantum magnetic dynamics of polarized light in arrays of microcavities

We describe an optical system that allows for a direct experimental observation of the quantum magnetic correlated dynamics of polarized light. By adjusting the Zeeman and the Raman fields, we could realize a ferromagnetic phase, super-counter-fluidity phase, and antiferromagnetic phase of polarized light, that are of interest for studying spin-dependent photon-photon interactions. We also design an experimental protocol for the observation of these phases. Moreover, the technique of controlling photospin correlation may be used for building quantum information devices.

Site-specific kondo effect at ambient temperatures in iron-based molecules

Kondo resonances are a very precise measure of spin-polarized transport through magnetic impurities. However, the Kondo temperature, indicating the thermal range of stability of the magnetic properties, is very low. By contrast, we find for iron phthalocyanine a Kondo temperature in spectroscopic measurements which is well above room temperature. It is also shown that the signal of the resonance depends strongly on the adsorption site of the molecule on a gold surface. Experimental data are verified by extensive numerical simulations, which establish that the coupling between iron states and states of the substrate depends strongly on the adsorption configuration.

Persistent spin current in a mesoscopic hybrid ring with spin-orbit coupling

We investigate the equilibrium property of a mesoscopic ring with a spin-orbit interaction. It is well known that, for a normal mesoscopic ring threaded by a magnetic flux, the electron acquires a Berry phase that induces the persistent (charge) current. Similarly, the spin of an electron acquires a spin Berry phase traversing a ring with a spin-orbit interaction. It is this spin Berry phase that induces a persistent spin current. To demonstrate its existence, we calculate the persistent spin current without an accompanying charge current in the normal region in a hybrid mesoscopic ring. We point out that this persistent spin current describes the real spin motion and can be observed experimentally.

Possible existence of a band of extended states induced by inter-Landau-band mixing in a quantum Hall system

The mixing of states with opposite chiralities in a quantum Hall system is shown to have a delocalization effect. It is possible that extended states may form bands because of this mixing, as is shown through a numerical calculation on a two-channel network model. Based on this result, a new phase diagram with a narrow metallic phase separating two adjacent QH phases and/or separating a QH phase from the insulating phase is proposed. The data from recent non-scaling experiments are reanalysed and it is shown that they seem to be consistent with the new phase diagram. However, due to finite-size effects, further study on large system size is still needed to conclude whether there are extended state bands in the thermodynamic limit.

Quantum size effects on the perpendicular upper critical field in ultrathin lead films

We report the thickness-dependent (in terms of atomic layers) oscillation behavior of the perpendicular upper critical field Hc2perpendicular in the ultrathin lead films at the reduced temperature (t = T/Tc). Distinct oscillations of the normal-state resistivity as a function of film thickness have also been observed. Compared with the Tc oscillation, the Hc2perpendicular shows a considerable large oscillation amplitude and a pi phase shift. The oscillatory mean free path caused by the quantum size effect plays a role in Hc2perpendicular oscillation.