Tribotronic Enhanced Photoresponsivity of a MoS2 Phototransistor

Molybdenum disulfide (MoS₂) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS₂ tribotronic phototransistor is developed by a conjunction of a MoS₂ phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS₂ phototransistor act as a "gate" to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W^-1 at the 100 mW cm^-2 UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.

High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm(2) V(-1) s(-1). Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 10(3) AW(-1), and 5 × 10(3), respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material's properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer.

MoS2-InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity

We introduce an amorphous indium-gallium-zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of ∼1.7 eV) and sputter-deposited a-IGZO (with a band gap of ∼3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measurements reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light-induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 μW) with excellent time-dependent photoresponse dynamics.

Quasi Two-Dimensional Dye-Sensitized In2O3 Phototransistors for Ultrahigh Responsivity and Photosensitivity Photodetector Applications

We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.

High aspect ratio conjugated polymer nanowires for high performance field-effect transistors and phototransistors

We synthesized a highly crystalline DPP-based polymer, DPPBTSPE, which contained 1,2-bis(5-(thiophen-2-yl)selenophen-2-yl)ethene as a planar and rigid electron donating group. High- and low-molecular weight (MW) DPPBTSPE fractions were collected by Soxhlet extraction and were employed to investigate their unique charge transport properties in macroscopic films and single crystalline polymer nanowire (SC-PNW), respectively. The low-MW polymer could provide well-isolated and high aspect ratio SC-PNWs, in which the direction of π-π stacking was perpendicular to the wire growing axis. The field effect transistors made of SC-PNWs exhibited remarkably high carrier mobility of 24 cm(2) V(-1) s(-1). In addition, phototransistors (PTs) made of SC-PNW showed very high performance in terms of photoresponsivity (R) and photoswitching ratio (P). The average R of the SC PNW-based PTs were in the range of 160-170 A W(-1) and the maximum R was measured at 1920 A W(-1), which is almost three orders higher than that of thin film-based PT device.

High responsivity and gate tunable graphene-MoS2 hybrid phototransistor

A 2D atomic-layer-thickness phototransistor based on a graphene-MoS2 bybrid device is constructed with a photoresponse much larger than that of individual graphene or MoS2 based phototransistors. Strong and selective light absorption in the MoS2 layer creates electric charges that are transferred to graphene layers derived by a build-in electrical field, where they recirculate many times due to the high carrier mobility of graphene. Gate tunable Fermi level in graphene layer allows the responsivity of this hybrid phototransistor to be continuously tuned from 0 to about 10(4) mA/W by the gate voltage. Furthermore, large scale, flexible, and transparent 2D phototransistors with high responsivity are constructed from the CVD-grown graphene and MoS2 flakes. The high responsivity, gate-tunable sensitivity, wavelength selectivity, and compatibility with current circuit technologies of this type device give it great potential for future application in integrated nano-optoelectronic systems.

Garment counting in a textile warehouse by means of a laser imaging system

Textile logistic warehouses are highly automated mechanized places where control points are needed to count and validate the number of garments in each batch. This paper proposes and describes a low cost and small size automated system designed to count the number of garments by processing an image of the corresponding hanger hooks generated using an array of phototransistors sensors and a linear laser beam. The generated image is processed using computer vision techniques to infer the number of garment units. The system has been tested on two logistic warehouses with a mean error in the estimated number of hangers of 0.13%.