Distribution of Major and trace elements in Koppunuru area, Guntur district, Andhra Pradesh, India

From koppunuru study area totally 58 samples were collected in 7 different boreholes, minimum depth of 28 m and Maximum depth of 157.7 m. The borehole samples geochemical analysis (major and trace elements) was carried out at Atomic Minerals Directorate for Exploration & Research (AMD), Hyderabad, India. Major and trace element studies have been conducted on the Neoproterozoic Palnad sub-basin Andhra Pradesh, South India, to determine their Geochemistry, Uranium mineralization and provenance characteristics. Geochemically, this sedimentary basin has a different litho – unit like as gritty quartzite, conglomerate, and Shale. This study area mainly dominated by Uranium deposited and radioactive elements are predominately deposit. Strong positive correlation between Uranium and Lead (r = 0.887) suggested radiogenic nature of this system.

Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs)

This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current-voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO₃/La_0.7Sr_0.3MnO₃ interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides.

Periodic Giant Polarization Gradients in Doped BiFeO3 Thin Films

The ultimate challenge for the development of new multiferroics with enhanced properties lies in achieving nanoscale control of the coupling between different ordering parameters. In oxide-based multiferroics, substitutional cation dopants offer the unparalleled possibility to modify both the electric and magnetic properties at a local scale. Herein it is demonstrated the formation of a dopant-controlled polar pattern in BiFeO₃ leading to the spontaneous instauration of periodic polarization waves. In particular, nonpolar Ca-doped rich regions act as spacers between consecutive dopant-depleted regions displaying coupled ferroelectric states. This alternation of layers with different ferroelectric state creates a novel vertical polar structure exhibiting giant polarization gradients as large as 70 μC cm^-2 across 30 Å thick domains. The drastic change in the polar state of the film is visualized using high-resolution differential phase-contrast imaging able to map changes in ferroelectric polarization at atomic scale. Furthermore, a periodic distortion in the Fe-O-Fe bonding angle suggests a local variation in the magnetic ordering. The findings provide a new insight into the role of doping and reveal hitherto unexplored means to tailor the functional properties of multiferroics by doping engineering.

Configurable topological textures in strain graded ferroelectric nanoplates

Topological defects in matter behave collectively to form highly non-trivial structures called topological textures that are characterised by conserved quantities such as the winding number. Here we show that an epitaxial ferroelectric square nanoplate of bismuth ferrite subjected to a large strain gradient (as much as 10⁵ m⁻¹) associated with misfit strain relaxation enables five discrete levels for the ferroelectric topological invariant of the entire system because of its peculiar radial quadrant domain texture and its inherent domain wall chirality. The total winding number of the topological texture can be configured from − 1 to 3 by selective non-local electric switching of the quadrant domains. By using angle-resolved piezoresponse force microscopy in conjunction with local winding number analysis, we directly identify the existence of vortices and anti-vortices, observe pair creation and annihilation and manipulate the net number of vortices. Our findings offer a useful concept for multi-level topological defect memory.

Exploring topological textures in ferroelectrics facilitates the understanding and application of topological features in matter. Here the authors demonstrate the strain field induced evolution of topological vortices in nanoplatelets of rhombohedral phase BiFeO3 using the angle-resolved piezoresponse force microscopy.

Manipulating Ferroelectrics through Changes in Surface and Interface Properties

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments are often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O₃ thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. This study forms an important step toward integrating ferroelectric materials in electronic devices.

Quantification of flexoelectricity in PbTiO3/SrTiO3 superlattice polar vortices using machine learning and phase-field modeling

Flexoelectricity refers to electric polarization generated by heterogeneous mechanical strains, namely strain gradients, in materials of arbitrary crystal symmetries. Despite more than 50 years of work on this effect, an accurate identification of its coupling strength remains an experimental challenge for most materials, which impedes its wide recognition. Here, we show the presence of flexoelectricity in the recently discovered polar vortices in PbTiO₃/SrTiO₃ superlattices based on a combination of machine-learning analysis of the atomic-scale electron microscopy imaging data and phenomenological phase-field modeling. By scrutinizing the influence of flexocoupling on the global vortex structure, we match theory and experiment using computer vision methodologies to determine the flexoelectric coefficients for PbTiO₃ and SrTiO₃. Our findings highlight the inherent, nontrivial role of flexoelectricity in the generation of emergent complex polarization morphologies and demonstrate a viable approach to delineating this effect, conducive to the deeper exploration of both topics.

Flexoelectric coupling between strain gradients and polarization influences the physics of ferroelectric devices but it is difficult to directly probe its effects. Here, Li et al. use principal component analysis to compare STEM images with phase-field modeling and extract the flexoelectric contributions.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO₃/SrTiO₃ superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a₁/a₂ phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

A Strain-Driven Antiferroelectric-to-Ferroelectric Phase Transition in La-Doped BiFeO3 Thin Films on Si

A strain-driven orthorhombic (O) to rhombohedral (R) phase transition is reported in La-doped BiFeO₃ thin films on silicon substrates. Biaxial compressive epitaxial strain is found to stabilize the rhombohedral phase at La concentrations beyond the morphotropic phase boundary (MPB). By tailoring the residual strain with film thickness, we demonstrate a mixed O/R phase structure consisting of O phase domains measuring tens of nanometers wide within a predominant R phase matrix. A combination of piezoresponse force microscopy (PFM), transmission electron microscopy (TEM), polarization-electric field hysteresis loop (P-E loop), and polarization maps reveal that the O-R structural change is an antiferroelectric to ferroelectric (AFE-FE) phase transition. Using scanning transmission electron microscopy (STEM), an atomically sharp O/R MPB is observed. Moreover, X-ray absorption spectra (XAS) and X-ray linear dichroism (XLD) measurements reveal a change in the antiferromagnetic axis orientation from out of plane (R-phase) to in plane (O-phase). These findings provide direct evidence of spin-charge-lattice coupling in La-doped BiFeO₃ thin films. Furthermore, this study opens a new pathway to drive the AFE-FE O-R phase transition and provides a route to study the O/R MPB in these films.

Electric field control of magnetization direction across the antiferromagnetic to ferromagnetic transition

Electric-field-induced magnetic switching can lead to a new paradigm of ultra-low power nonvolatile magnetoelectric random access memory (MeRAM). To date the realization of MeRAM relies primarily on ferromagnetic (FM) based heterostructures which exhibit low voltage-controlled magnetic anisotropy (VCMA) efficiency. On the other hand, manipulation of magnetism in antiferromagnetic (AFM) based nanojunctions by purely electric field means (rather than E-field induced strain) remains unexplored thus far. Ab initio electronic structure calculations reveal that the VCMA of ultrathin FeRh/MgO bilayers exhibits distinct linear or nonlinear behavior across the AFM to FM metamagnetic transition depending on the Fe- or Rh-interface termination. We predict that the AFM Fe-terminated phase undergoes an E-field magnetization switching with large VCMA efficiency and a spin reorientation across the metamagnetic transition. In sharp contrast, while the Rh-terminated interface exhibits large out-of-plane (in-plane) MA in the FM (AFM) phase, its magnetization is more rigid to external E-field. These findings demonstrate that manipulation of the AFM Néel-order magnetization direction via purely E-field means can pave the way toward ultra-low energy AFM-based MeRAM devices.

Functional electronic inversion layers at ferroelectric domain walls

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO₃. We relate the transition to the formation-and eventual activation-of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.

Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO3 on SrTiO3

Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO₃ films grown on DyScO₃, a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO₃. Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO₃ (BFO) (001) thin film heterostructures fabricated on (001) SrTiO₃ (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO₃ (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (H_C) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.

Do Health Information Exchanges Deter Repetition of Medical Services?

Repetition of medical services by providers is one of the major sources of healthcare costs. The lack of access to previous medical information on a patient at the point of care often leads a physician to perform medical procedures that have already been done. Multiple healthcare initiatives and legislation at both the federal and state levels have mandated Health Information Exchange (HIE) systems to address this problem. This study aims to assess the extent to which HIE could reduce these repetitions, using data from Centers for Medicare 8 Medicaid Services and a regional HIE organization. A 2-Stage Least Square model is developed to predict the impact of HIE on repetitions of two classes of procedures: diagnostic and therapeutic. The first stage is a predictive analytic model that estimates the duration of tenure of each HIE member-practice. Based on these estimates, the second stage predicts the effect of providers’ HIE tenure on their repetition of medical services. The model incorporates moderating effects of a federal quality assurance program and the complexity of medical procedures with a set of control variables. Our analyses show that a practice's tenure with HIE significantly lowers the repetition of therapeutic medical procedures, while diagnostic procedures are not impacted. The medical reasons for the effects observed in each class of procedures are discussed. The results will inform healthcare policymakers and provide insights on the business models of HIE platforms.

Stability of Polar Vortex Lattice in Ferroelectric Superlattices

A novel mesoscale state comprising of an ordered polar vortex lattice has been demonstrated in ferroelectric superlattices of PbTiO₃/SrTiO₃. Here, we employ phase-field simulations, analytical theory, and experimental observations to evaluate thermodynamic conditions and geometric length scales that are critical for the formation of such exotic vortex states. We show that the stability of these vortex lattices involves an intimate competition between long-range electrostatic, long-range elastic, and short-range polarization gradient-related interactions leading to both an upper and a lower bound to the length scale at which these states can be observed. We found that the critical length is related to the intrinsic domain wall width, which could serve as a simple intuitive design rule for the discovery of novel ultrafine topological structures in ferroic systems.

High Speed Epitaxial Perovskite Memory on Flexible Substrates

Single-crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.