1
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Chen W, Liao J, Zhu P, Liu H, Zhu Z, Zheng Y, Liu J. Large magnetic anisotropy and enhanced Curie temperature in two-dimensional MnTe 2 coupled with β-phase group-VA semiconductor monolayers. RSC Adv 2024; 14:26166-26175. [PMID: 39161453 PMCID: PMC11331483 DOI: 10.1039/d4ra04463k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2024] [Accepted: 08/15/2024] [Indexed: 08/21/2024] Open
Abstract
Promoting the Curie temperature (T C) and tunning the magnetocrystalline anisotropy energy (MAE) have been key issues with two-dimensional (2D) ferromagnetic (FM) materials. Here, the structural and magnetic properties of MnTe2/X (X = As, Sb and Bi) heterostructures are investigated through first-principles calculations. We reveal that monolayer MnTe2 weakly interacts with monolayer As or Sb through van der Waals (vdW) forces, but has strong covalent bonds with monolayer Bi, indicated by Bi-Te bond formation. The coupling of MnTe2 with these β-phase group-VA semiconductor monolayers substantially modulates MAE, with MnTe2/As showing a shift to in-plane easy magnetization, and MnTe2/Sb exhibiting a large perpendicular MAE of 4.13 meV per cell. The formation of vdW heterostructures influence on Te spin-orbit coupling matrix elements markedly governs MAE. MnTe2/Bi also has an in-plane MAE, contributed by both Te and Bi atoms. Additionally, coupling MnTe2 with X significantly affects magnetic interactions. It is worth noting that the T C of MnTe2/Sb reaches 233.2 K, significantly larger than that of pure MnTe2. A large perpendicular MAE and a heightened T C makes MnTe2/Sb desired candidates for next-generation spintronic applications. Our work provides a way to modulate the magnetic properties of 2D FM materials.
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Affiliation(s)
- Wei Chen
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Jujian Liao
- School of Physics and Electronics, Central South University Changsha 410083 China
| | - Peidong Zhu
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Hui Liu
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Zhengjian Zhu
- Hunan Weiming Energy Technology Co., Ltd Changsha 413500 China
| | - Yu Zheng
- School of Electronic Information and Electrical Engineering, Changsha University Changsha 410022 China
| | - Jindong Liu
- School of Physics and Electronic Information, Yantai University Yantai 264005 China
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2
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Mohanta M, Jena P. Magnetism of Otherwise Nonmagnetic Elements: From Clusters to Monolayers. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:12286-12295. [PMID: 39081559 PMCID: PMC11284855 DOI: 10.1021/acs.jpcc.4c03592] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2024] [Revised: 07/02/2024] [Accepted: 07/03/2024] [Indexed: 08/02/2024]
Abstract
Atomic clusters are known to exhibit properties different from their bulk phase. However, when assembled or supported on substrates, clusters often lose their uniqueness. For example, uranium and coinage metals (Cu, Ag, Au) are nonmagnetic in their bulk. Herein, we show that UX6 (X= Cu, Ag, Au) clusters, unlike their nonmagnetic bulk, are not only magnetic but also retain their magnetic character and structure when assembled into a two-dimensional (2D) material. The magnetic moment remains localized at the U site and is found to be 3μB in clusters and about 2μB in the 2D structure. In 2D UX4 (X = Cu, Ag, Au) monolayers, U atoms are found to be coupled antiferromagnetically through an indirect exchange coupling mediated by the coinage metal atoms. Furthermore, hydrogenation of these monolayers can induce a transition from the antiferromagnetic to the ferromagnetic phase. These results, based on density functional theory, have predictive capability and can motivate experiments.
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Affiliation(s)
- Manish
Kumar Mohanta
- Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, United States
| | - Puru Jena
- Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, United States
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3
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Aguirre A, Pinar Solé A, Soler Polo D, González-Orellana C, Thakur A, Ortuzar J, Stesovych O, Kumar M, Peña-Díaz M, Weber A, Tallarida M, Dai J, Dreiser J, Muntwiler M, Rogero C, Pascual JI, Jelínek P, Ilyn M, Corso M. Ferromagnetic Order in 2D Layers of Transition Metal Dichlorides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402723. [PMID: 38665115 DOI: 10.1002/adma.202402723] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 04/08/2024] [Indexed: 05/07/2024]
Abstract
Magnetism in two dimensions is traditionally considered an exotic phase mediated by spin fluctuations, but far from collinearly ordered in the ground state. Recently, 2D magnetic states have been discovered in layered van der Waals compounds. Their robust and tunable magnetic state by material composition, combined with reduced dimensionality, foresee a strong potential as a key element in magnetic devices. Here, a class of 2D magnets based on metallic chlorides is presented. The magnetic order survives on top of a metallic substrate, even down to the monolayer limit, and can be switched from perpendicular to in-plane by substituting the metal ion from iron to nickel. Using functionalized STM tips as magnetic sensors, local exchange fields are identified, even in the absence of an external magnetic field. Since the compounds are processable by molecular beam epitaxy techniques, they provide a platform with large potential for incorporation into current device technologies.
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Affiliation(s)
- Andrea Aguirre
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
- CIC nanoGUNE-BRTA, Donostia-San Sebastián, 20018, Spain
| | - Andrés Pinar Solé
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, Prague, 16200, Czech Republic
| | - Diego Soler Polo
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, Prague, 16200, Czech Republic
| | | | - Amitayush Thakur
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | - Jon Ortuzar
- CIC nanoGUNE-BRTA, Donostia-San Sebastián, 20018, Spain
| | - Oleksandr Stesovych
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, Prague, 16200, Czech Republic
| | - Manish Kumar
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, Prague, 16200, Czech Republic
| | - Marina Peña-Díaz
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | - Andrew Weber
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | | | - Ji Dai
- ALBA, Cerdanyola del Vallès, Barcelona, 08290, Spain
| | - Jan Dreiser
- Paul Scherrer Institut, Forschungsstrasse 111, Villigen, CH-5232, Switzerland
| | - Matthias Muntwiler
- Paul Scherrer Institut, Forschungsstrasse 111, Villigen, CH-5232, Switzerland
| | - Celia Rogero
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
- Donostia International Physics Center, Donostia-San Sebastián, 20018, Spain
| | - José Ignacio Pascual
- CIC nanoGUNE-BRTA, Donostia-San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
| | - Pavel Jelínek
- Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, Prague, 16200, Czech Republic
| | - Maxim Ilyn
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
| | - Martina Corso
- Centro de Física de Materiales CSIC-UPV/EHU, Donostia-San Sebastián, 20018, Spain
- Donostia International Physics Center, Donostia-San Sebastián, 20018, Spain
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4
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Nguyen DK, Ponce-Pérez R, Guerrero-Sanchez J, Hoat DM. Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications. RSC Adv 2024; 14:19067-19075. [PMID: 38882473 PMCID: PMC11177291 DOI: 10.1039/d4ra02071e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Accepted: 06/07/2024] [Indexed: 06/18/2024] Open
Abstract
Developing new multifunctional two-dimensional (2D) materials with two or more functions has been one of the main tasks of materials scientists. In this work, defect engineering is explored to functionalize PtSSe monolayer with feature-rich electronic and magnetic properties. Pristine monolayer is a non-magnetic semiconductor 2D material with a band gap of 1.52(2.31) eV obtained from PBE(HSE06)-based calculations. Upon creating single Pt vacancy, the half-metallic property is induced in PtSSe monolayer with a total magnetic moment of 4.00 μ B. Herein, magnetism is originated mainly from S and Se atoms around the defect site. In contrast, single S and Se vacancies preserve the non-magnetic nature. However, the band gap suffers of considerable reduction of the order of 67.11% and 48.68%, respectively. The half-metallicity emerges also upon doping with alkali metals (Li and Na) with total magnetic moment of 1.00 μ B, while alkaline earth impurities (Be and Mg) make new diluted magnetic semiconductor materials from PtSSe monolayer with total magnetic moment of 2.00 μ B. In these cases, magnetic properties are produced mainly by Se atoms closest to the doping site. In addition, doping with P and As atoms at chalcogen sites is also investigated. Except for the half-metallic AsSe system (As doping at Se site), the diluted magnetic semiconductor behavior is obtained in the remaining cases. Spin density results indicate key role of the VA-group impurities in magnetizing PtSSe monolayer. In these cases, total magnetic moments between 0.99 and 1.00 μ B are obtained. Further Bader charge analysis implies the charge loser role of all impurities that transfer charge to the host monolayer. Results presented in this work may suggest promises of the defected and doped Janus PtSSe structures for optoelectronic and spintronic applications.
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Affiliation(s)
- Duy Khanh Nguyen
- Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University Ho Chi Minh City Vietnam
- Faculty of Mechanical - Electrical and Computer Engineering, School of Technology, Van Lang University Ho Chi Minh City Vietnam
| | - R Ponce-Pérez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14, Código Postal 22800 Ensenada Baja California Mexico
| | - J Guerrero-Sanchez
- Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología Apartado Postal 14, Código Postal 22800 Ensenada Baja California Mexico
| | - D M Hoat
- Institute of Theoretical and Applied Research, Duy Tan University Ha Noi 100000 Viet Nam
- Faculty of Natural Sciences, Duy Tan University Da Nang 550000 Viet Nam
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5
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Cheng X, Xu S, Hu T, Hu S, Gao H, Singh DJ, Ren W. First-principles predictions of room-temperature ferromagnetism in orthorhombic MnX 2 (X = O, S) monolayers. Phys Chem Chem Phys 2024; 26:9170-9178. [PMID: 37850421 DOI: 10.1039/d3cp03143h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2023]
Abstract
Two-dimensional ferromagnets with high spin-polarization at ambient temperature are of considerable interest because they might be useful for making nanoscale spintronic devices. We report that even though bulk phases of MnO2 are generally antiferromagnetic with low ordering temperatures, the corresponding MnO2 and MnS2 monolayers are ferromagnetic, and MnS2 is a high temperature half metallic ferromagnet. Based on first-principles calculations, we find that the MnO2 monolayer is an intrinsic ferromagnetic semiconductor with a Curie temperature TC of ∼300 K, while the half-metallic MnS2 monolayer has a remarkably high TC of ∼1150 K. Both compounds have substantial magnetocrystalline anisotropy, out of plane in the case of MnO2 monolayers, and in plane along the b-axis of orthorhombic MnS2 monolayer. Interestingly, a metal-insulator phase transition occurs in the MnS2 monolayer when the applied biaxial strain is beyond -2%. Tuning near this metal-insulator transition offers additional possibilities for devices. The present work shows that MnX2 (X = O, S) monolayers have the properties required for ultrathin nano-spintronic devices.
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Affiliation(s)
- Xuli Cheng
- Department of Physics, Materials Genome Institute, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
| | - Shaowen Xu
- Department of Physics, Materials Genome Institute, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Science, Hangzhou 310024, China.
| | - Tao Hu
- State Key Laboratory of Advanced Special Steels, School of Materials Science and Engineering, Shanghai University, Shanghai 200444, China
| | - Shunbo Hu
- Department of Physics, Materials Genome Institute, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
- Institute for the Conservation of Cultural Heritage, School of Cultural Heritage and Information Management, Shanghai University, Shanghai 200444, China.
| | - Heng Gao
- Department of Physics, Materials Genome Institute, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
| | - David J Singh
- Department of Physics and Astronomy, University of Missouri, Columbia, MO 65211, USA
| | - Wei Ren
- Department of Physics, Materials Genome Institute, Shanghai Key Laboratory of High Temperature Superconductors, International Centre of Quantum and Molecular Structures, Shanghai University, Shanghai 200444, China.
- Zhejiang Laboratory, Hangzhou 311100, China
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6
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Chen Z, Hu H, Feng D, Guan Z, Zhong T, Wu X, Song C. Intrinsic edge states and strain-tunable spin textures in the Janus 1T-VTeCl monolayer. Phys Chem Chem Phys 2024; 26:8623-8630. [PMID: 38426271 DOI: 10.1039/d3cp05744e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Using first-principles calculations and micro-magnetic simulations, we investigate the electronic structures, the effect of biaxial strain on the topological characteristics, magnetic anisotropy energy (MAE), Dzyaloshinskii-Moriya interaction (DMI) and spin textures in the Janus 1T phase VTeCl (1T-VTeCl) monolayer. Our results show that 1T-VTeCl has an intrinsic edge state, and a topological phase transition with a sizeable band gap is achieved by applying biaxial strain. Interestingly, the MAE can be switched from the in-plane to the off-plane with a compressive strain of -5%. Microscopically, the origin of MAE is mainly associated with the large spin-orbit coupling (SOC) from the heavy nonmagnetic Te atoms rather than that from the V atoms. Furthermore, the induced DMI (0.09 meV) can occur stabilizing magnetic merons without applying temperatures and magnetic fields. Then, the skyrmions, frustrated antiferromagnetism and vortex are induced after applying a suitable compressive strain. Our study provides compelling evidence that the 1T-VTeCl monolayer with topological properties holds great potential for application in spintronic devices, as well as information storage devices based on different magnetic phases achievable through strain engineering.
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Affiliation(s)
- Zheng Chen
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Hongliang Hu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Dushuo Feng
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Zhihao Guan
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Tingting Zhong
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Xiaoping Wu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
| | - Changsheng Song
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China.
- Longgang Institute of Zhejiang Sci-Tech University, Wenzhou 325802, China
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7
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Yi Y, Han J, Li Z, Cao S, Zhang Z. Inducing abundant magnetic phases and enhancing magnetic stability by edge modifications and physical regulations for NiI 2 nanoribbons. Phys Chem Chem Phys 2024; 26:5045-5058. [PMID: 38258528 DOI: 10.1039/d3cp04536f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Recently, a magnetic semiconducting NiI2 monolayer was successfully fabricated. To obtain richer magneto-electronic properties and find new physics for NiI2, we studied the zigzag-type NiI2 nanoribbon (ZNiI2NR) with edges modified by different concentrations of H and/or O atoms. Results show that these ribbons hold a higher energy stability, thermal stability, and magnetic stability, and the Curie temperature can be increased to 143 from 15 K for the bare-edged ribbons. They feature a half-semiconductor, bipolar magnetic semiconductor, or half-metal, depending on the edge-terminated atomic species and concentrations, and are closely related to the ribbon edge states, impurity bands or hybridized bands. By applying strain or an electric field, ribbons can achieve a reversible multi-magnetic phase transition among a bipolar magnetic semiconductor, half-semiconductor, half-metal, and magnetic metal. This is because strain changes the Ni-I bond length, resulting in a variation of bond configurations (weight of ionic and covalent bonds) and the number of unpaired electrons. The compressive strain can increase the Curie temperature because it makes the edged Ni-I-Ni bond angle closer to 90°, leading to the FM d-p-d superexchange interaction being increased. The electric field varies the magnetic phase because it alters the electrostatic potential of the ribbon edges, and the Curie temperature is enhanced under the electric field because the ribbon is changed to a metallic state (half-metal or magnetic metal), in which the magnetic Ni atoms satisfy the Stoner criterion and hold a large magnetic exchange coefficient and electron state density at the Fermi surface.
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Affiliation(s)
- Yu Yi
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Jianing Han
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhanhai Li
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Shengguo Cao
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
| | - Zhenhua Zhang
- Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
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8
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Xie J, Wu D, Liao Y, Cao X, Zhou S. Charge doping and electric field tunable ferromagnetism and Curie temperature of the MnS 2 monolayer. Phys Chem Chem Phys 2023; 26:267-277. [PMID: 38059372 DOI: 10.1039/d3cp04382g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Two-dimensional ferromagnets with a long-range ferromagnetic ordering at finite temperature present a bright prospect for their potential applications in nanoscale spintronic devices. The tuning of their intrinsic ferromagnetism and Curie temperature is essential for the development of next-generation data storage and spintronic devices. In this work, the electronic structures, ferromagnetism and Curie temperature of two-dimensional MnS2 monolayer are controlled by charge doping and electric field using first principles calculations. The results show that the dynamic and thermal stability of monolayer MnS2 for all of the cases can be still maintained. Moreover, there is no existence of phase transition and all MnS2 monolayers at any charge doping concentrations and electric field intensities favor ferromagnetic coupling. For the manipulation of electron doping, the calculated total magnetic moment Mtot of the MnS2 monolayer exhibits an increase from 3.112 to 3.491μB per unit cell. Further analysis indicates that a transition from half-metal to metal occurs by introducing the charge doping and vertical electric field, and the Mn 3d electronic states are the major determinants of ferromagnetism. Additionally, the charge doping enables the magnetic anisotropy energy to transform from an in-plane easy axis to the magnetization direction out of the plane. The Curie temperature Tc of the MnS2 monolayer can be moderately enhanced above room temperature by hole doping and application of a vertical electric field. Remarkably, Tc reaches its peak at 767 K at a hole doping concentration of -0.8e. This work enriches the microscopic understanding of the tuning mechanism of ferromagnetism and supplies a sound theoretical basis for subsequent experimental studies.
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Affiliation(s)
- Jing Xie
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Dongni Wu
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Yangfang Liao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Xiaolong Cao
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
| | - Shiyou Zhou
- College of Physics and Electronic Science, Guizhou Normal University, Guiyang 550001, China.
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9
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Gao Y, Pan H, Zhou B. Bilayer hexagonal structure MnN 2 nanosheets with room-temperature ferromagnetic half-metal behavior and a tunable electronic structure. Phys Chem Chem Phys 2023; 25:23728-23737. [PMID: 37615054 DOI: 10.1039/d3cp01588b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Abstract
Two-dimensional (2D) layered materials have atomically thin thickness and outstanding physical properties, attracting intensive research in the past year. As one of these materials, a 2D magnet is an ideal platform for fundamental physics research and magnetic device development. Recently, a non-MoS2-type geometry was found to be more favorable in 2D transition-metal dinitrides. In this work, driven by this new configuration, we perform a comprehensive first-principles study on the bilayer hexagonal structure of 2D manganese dinitrides. Our results show that 2D MnN2 is a ferromagnetic half-metal at its ground state with 100% spin-polarization ratio at the Fermi energy level. The phonon spectrum calculation and ab initio molecular dynamics simulation show that the 2D MnN2 crystal has a high thermodynamic stability and its 2D lattice can be retained at room-temperature. Monte Carlo simulations based on the Heisenberg model predict a Curie temperature of over 563 K and its electronic properties can be regulated by biaxial strain. The half-metallic states are mainly contributed by Mn d orbitals, and the magnetic exchange of the system mainly comes from the Mn-N-Mn super-exchange. The p-d orbital hybridization will provide a small antiparallel magnetic moment of N atoms, and the p-orbital dangling bond can be eliminated by oxidation to enhance the total magnetic moment of the system. The study of magnetic anisotropy energy indicates that the easy magnetization axis is in-plane and hybridization between Mn dyz and dz2 orbitals gives the largest magnetic anisotropy contribution. In view of these results, we consider that novel 2D MnN2 is one of the most promising two-dimensional materials for nano-spintronic applications.
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Affiliation(s)
- Yuan Gao
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Honggang Pan
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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10
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Gorai DK, Kuila SK, Oraon A, Kumar A, Suthar M, Mitra R, Biswas K, Roy PK, Ahmad MI, Kundu TK. A facile and green synthesis of Mn and P functionalized graphitic carbon nitride nanosheets for spintronics devices and enhanced photocatalytic performance under visible-light. J Colloid Interface Sci 2023; 644:397-414. [PMID: 37126890 DOI: 10.1016/j.jcis.2023.04.057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 03/26/2023] [Accepted: 04/13/2023] [Indexed: 05/03/2023]
Abstract
Manganese and phosphorus co-doped, graphitic carbon nitride (g-C3N4) nanosheet (Mn/P-g-C3N4) is prepared by facile and green calcination process of melamine (C3H6N6), manganese chloride tetrahydrate (MnCl2·4H2O), and ammonium dihydrogen phosphate ((NH4)H2PO4). The Mn/P co-doping significantly enhances magnetic values compared to pristine-g-C3N4, phosphorus-doped g-C3N4 (P-g-C3N4), and manganese-doped g-C3N4 (Mn-g-C3N4). We find that Mn/P-g-C3N4 is a half-metallic ferromagnetic material having a magnetic moment and Curie temperature of 4.51 μB and ∼ 800 K, respectively. The ultraviolet-visible (UV-vis) absorption spectrum of Mn/P-g-C3N4 reveals superior absorption in broader wavelength compared to pristine-g-C3N4, P-g-C3N4, and Mn-g-C3N4. The methyl orange degradation efficiency of Mn/P-g-C3N4 photocatalyst is 94 %, which is three times more than that of pristine-g-C3N4 (29 %) and more significant than the P-g-C3N4 (46 %) and Mn-g-C3N4 (58 %). Furthermore, density functional theory (DFT) calculation explains the origin of high magnetic behavior, the boosted photocatalytic efficiency of Mn/P-g-C3N4, and the essential material properties like structure, bandgap, the density of states (DOS), and atomic level interaction. This work may be helpful for reasonably designing ferromagnetic material for spintronics devices and boosting visible-light (VL) photocatalytic performance for environmental remediation.
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Affiliation(s)
- Deepak Kumar Gorai
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal 721302, India.
| | - Saikat Kumar Kuila
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal 721302, India
| | - Akash Oraon
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal 721302, India
| | - Anurag Kumar
- Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi, U.P. 221005, India
| | - Mukesh Suthar
- Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi, U.P. 221005, India
| | - Rahul Mitra
- Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, U.P. 208016, India
| | - Krishanu Biswas
- Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, U.P. 208016, India
| | - P K Roy
- Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi, U.P. 221005, India
| | - Md Imteyaz Ahmad
- Department of Ceramic Engineering, Indian Institute of Technology (BHU), Varanasi, U.P. 221005, India
| | - Tarun Kumar Kundu
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal 721302, India.
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11
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Wines D, Choudhary K, Tavazza F. Systematic DFT+U and Quantum Monte Carlo Benchmark of Magnetic Two-Dimensional (2D) CrX 3 (X = I, Br, Cl, F). THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2023; 127:10.1021/acs.jpcc.2c06733. [PMID: 36727030 PMCID: PMC9888057 DOI: 10.1021/acs.jpcc.2c06733] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The search for two-dimensional (2D) magnetic materials has attracted a great deal of attention because of the experimental synthesis of 2D CrI3, which has a measured Curie temperature of 45 K. Often times, these monolayers have a higher degree of electron correlation and require more sophisticated methods beyond density functional theory (DFT). Diffusion Monte Carlo (DMC) is a correlated electronic structure method that has been demonstrated to be successful for calculating the electronic and magnetic properties of a wide variety of 2D and bulk systems, since it has a weaker dependence on the Hubbard parameter (U) and density functional. In this study, we designed a workflow that combines DFT +U and DMC in order to treat 2D correlated magnetic systems. We chose monolayer CrX3 (X = I, Br, Cl, F), with a stronger focus on CrI3 and CrBr3, as a case study due to the fact that they have been experimentally realized and have a finite critical temperature. With this DFT+U and DMC workflow and the analytical method of Torelli and Olsen, we estimated a maximum value of 43.56 K for the Tc of CrI3 and 20.78 K for the Tc of CrBr3, in addition to analyzing the spin densities and magnetic properties with DMC and DFT+U. We expect that running this workflow for a well-known material class will aid in the future discovery and characterization of lesser known and more complex correlated 2D magnetic materials.
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Affiliation(s)
- Daniel Wines
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Kamal Choudhary
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States; Theiss Research, La Jolla, California 92037, United States
| | - Francesca Tavazza
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
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12
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Chen D, Jiang Z, Tang Y, Zhou J, Gu Y, He JJ, Yuan J. Electrical and magnetic properties of antiferromagnetic semiconductor MnSi 2N 4 monolayer. Front Chem 2022; 10:1103704. [PMID: 36569959 PMCID: PMC9781922 DOI: 10.3389/fchem.2022.1103704] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/20/2022] [Accepted: 11/28/2022] [Indexed: 12/12/2022] Open
Abstract
Two-dimensional antiferromagnetic semiconductors have triggered significant attention due to their unique physical properties and broad application. Based on first-principles calculations, a novel two-dimensional (2D) antiferromagnetic material MnSi2N4 monolayer is predicted. The calculation results show that the two-dimensional MnSi2N4 prefers an antiferromagnetic state with a small band gap of 0.26 eV. MnSi2N4 has strong antiferromagnetic coupling which can be effectively tuned under strain. Interestingly, the MnSi2N4 monolayer exhibits a half-metallic ferromagnetic properties under an external magnetic field, in which the spin-up electronic state displays a metallic property, while the spin-down electronic state exhibits a semiconducting characteristic. Therefore, 100% spin polarization can be achieved. Two-dimensional MnSi2N4 monolayer has potential application in the field of high-density information storage and spintronic devices.
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Affiliation(s)
- Dongke Chen
- School of Physics and Materials Science Nanchang University, Nanchang, China,School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China
| | - Zhengyu Jiang
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China
| | - Ying Tang
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China
| | - Junlei Zhou
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China
| | - Yuzhou Gu
- School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang, China
| | - Jing-Jing He
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, China
| | - Jiaren Yuan
- School of Physics and Materials Science Nanchang University, Nanchang, China,*Correspondence: Jiaren Yuan,
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13
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Wang Y, Jiang J, Mi W. Two-dimensional heterotriangulene-based manganese organic frameworks: bipolar magnetic and half semiconductors with perpendicular magnetocrystalline anisotropy. NANOSCALE 2022; 14:8865-8874. [PMID: 35697051 DOI: 10.1039/d2nr00398h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) organic intrinsic magnetic semiconductors have potential applications in low-dimensional organic spintronic devices due to their remarkable physical properties. However, 2D metal-organic frameworks with magnetic and semiconducting properties are rare. In this work, the electronic and magnetic properties of 2D heterotriangulene-based manganese organic frameworks including triphenylamine (TPA) and triphenylborane (TPB) organic ligands with methylene (M), carbonyl (C) or oxygen (O) coordination groups were studied by first-principles calculations. XTPA-Mn (X = M and O) is a bipolar magnetic semiconductor with a large spin-flip band gap. CTPA-Mn and XTPB-Mn (X = M, C and O) are half semiconductors with perpendicular magnetocrystalline anisotropy. The electronic properties of materials ranging from half semiconductors to bipolar magnetic semiconductors appear in CTPA-Mn and XTPB-Mn (X = M and C) at biaxial strains. XTPA-Mn and XTPB-Mn with a frustrated antiferromagnetic configuration are semiconductors with good ductility and stability. These results enrich the diversity of 2D organic intrinsic magnetic semiconductors, which have potential applications in spintronic devices.
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Affiliation(s)
- Yue Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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14
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Hao X, Wu W, Zhu J, Song B, Meng Q, Wu M, Hua C, Yang SA, Zhou M. Topological band transition between hexagonal and triangular lattices with ( px, py) orbitals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:255504. [PMID: 35381579 DOI: 10.1088/1361-648x/ac6473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2022] [Accepted: 04/05/2022] [Indexed: 06/14/2023]
Abstract
By combining tight-binding modelling with density functional theory based first-principles calculations, we investigate the band evolution of two-dimensional (2D) hexagonal lattices with (px,py) orbitals, focusing on the electronic structures and topological phase transitions. The (px,py)-orbital hexagonal lattice model possesses two flat bands encompassing two linearly dispersive Dirac bands. Breaking the A/B sublattice symmetry could transform the model into two triangular lattices, each featuring a flat band and a dispersive band. Inclusion of the spin-orbit coupling and magnetization may give rise to quantum spin Hall and quantum anomalous Hall (QAH) states. As a proof of concept, we demonstrate that half-hydrogenated stanene is encoded by a triangular lattice with (px,py) orbitals, which exhibits ferromagnetism and QAH effect with a topological gap of ∼0.15 eV, feasible for experimental observation. These results provide insights into the structure-property relationships involving the orbital degree of freedom, which may shed light on future design and preparation of 2D topological materials for novel electronic/spintronic and quantum computing devices.
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Affiliation(s)
- Xiamin Hao
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Weikang Wu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Jiaojiao Zhu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Biyu Song
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
| | - Qingling Meng
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
| | - Meimei Wu
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
| | - Chenqiang Hua
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Miao Zhou
- School of Physics, Beihang University, Beijing 100191, People's Republic of China
- Beihang Hangzhou Innovation Institute Yuhang, Hangzhou 310023, People's Republic of China
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15
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Morinson-Negrete JD, Ortega-López C, Espitia-Rico MJ. Effects of Mono-Vacancies of Oxygen and Manganese on the Properties of the MnO 2/Graphene Heterostructure. MATERIALS 2022; 15:ma15082731. [PMID: 35454425 PMCID: PMC9032963 DOI: 10.3390/ma15082731] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Revised: 03/27/2022] [Accepted: 04/01/2022] [Indexed: 01/13/2023]
Abstract
The effects of the monovacancies of oxygen (VO) and manganese (VMn) on the structural and electronic properties of the 1T−MnO2/graphene heterostructure are investigated, within the framework of density functional theory (DFT). We found that the values of the formation energy for the heterostructure without and with vacancies of VO and VMn were −20.99 meVÅ2 , −32.11meVÅ2, and −20.81 meVÅ2, respectively. The negative values of the formation energy indicate that the three heterostructures are energetically stable and that they could be grown in the experiment (exothermic processes). Additionally, it was found that the presence of monovacancies of VO and VMn in the heterostructure induce: (a) a slight decrease in the interlayer separation distance in the 1T−MnO2/graphene heterostructure of ~0.13% and ~1.41%, respectively, and (b) a contraction of the (Mn−O) bond length of the neighboring atoms of the VO and VMn monovacancies of ~2.34% and ~6.83%, respectively. Calculations of the Bader charge for the heterostructure without and with VO and VMn monovacancies show that these monovacancies induce significant changes in the charge of the first-neighbor atoms of the VO and VMn vacancies, generating chemically active sites (locales) that could favor the adsorption of external atoms and molecules. From the analysis of the density of state and the structure of the bands, we found that the graphene conserves the Dirac cone in the heterostructure with or without vacancies, while the 1T−MnO2 monolayer in the heterostructures without and with VO monovacancies exhibits half-metallic and magnetic behavior. These properties mainly come from the hybridization of the 3d−Mn and 2p−O states. In both cases, the heterostructure possesses a magnetic moment of 3.00 μβ/Mn. From this behavior, it can be inferred the heterostructures with and without VO monovacancies could be used in spintronics.
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Affiliation(s)
- Juan David Morinson-Negrete
- Grupo Avanzado de Materiales y Sistemas Complejos GAMASCO, Universidad de Córdoba, Montería CP 230001, Colombia; (J.D.M.-N.); (C.O.-L.)
- Doctorado en Ciencias Física, Universidad de Córdoba, Montería CP 203001, Colombia
- Grupo de Investigación AMDAC, Institución Educativa José María Córdoba, Montería CP 230001, Colombia
| | - César Ortega-López
- Grupo Avanzado de Materiales y Sistemas Complejos GAMASCO, Universidad de Córdoba, Montería CP 230001, Colombia; (J.D.M.-N.); (C.O.-L.)
- Doctorado en Ciencias Física, Universidad de Córdoba, Montería CP 203001, Colombia
| | - Miguel J. Espitia-Rico
- Grupo GEFEM, Universidad Distrital Francisco José de Caldas, Bogotá CP 110111, Colombia
- Correspondence: ; Tel.: +57-6013239300 (ext. 1516)
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16
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Wang H, Feng Q, Li X, Yang J. High-Throughput Computational Screening for Bipolar Magnetic Semiconductors. RESEARCH 2022; 2022:9857631. [PMID: 35360648 PMCID: PMC8943632 DOI: 10.34133/2022/9857631] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 02/20/2022] [Indexed: 12/01/2022]
Abstract
Searching ferromagnetic semiconductor materials with electrically controllable spin polarization is a long-term challenge for spintronics. Bipolar magnetic semiconductors (BMS), with valence and conduction band edges fully spin polarized in different spin directions, show great promise in this aspect because the carrier spin polarization direction can be easily tuned by voltage gate. Here, we propose a standard high-throughput computational screening scheme for searching BMS materials. The application of this scheme to the Materials Project database gives 11 intrinsic BMS materials (1 experimental and 10 theoretical) from nearly ~40000 structures. Among them, a room-temperature BMS Li2V3TeO8 (mp-771246) is discovered with a Curie temperature of 478 K. Moreover, the BMS feature can be maintained well when cutting the bulk Li2V3TeO8 into (001) nanofilms for realistic applications. This work provides a feasible solution for discovering novel intrinsic BMS materials from various crystal structure databases, paving the way for realizing electric-field controlled spintronics devices.
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Affiliation(s)
- Haidi Wang
- School of Physics, Hefei University of Technology, Hefei, Anhui 230601, China
| | - Qingqing Feng
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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17
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Guo Y, Zhang Y, Lu S, Zhang X, Zhou Q, Yuan S, Wang J. Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO 3-Type FeTiO 3. J Phys Chem Lett 2022; 13:1991-1999. [PMID: 35188784 DOI: 10.1021/acs.jpclett.2c00091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe2Ti2O9, which can be obtained from LiNbO3-type FeTiO3 antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μB/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d11 of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.
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Affiliation(s)
- Yilv Guo
- School of Physics, Southeast University, Nanjing 211189, China
| | - Yehui Zhang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shuaihua Lu
- School of Physics, Southeast University, Nanjing 211189, China
| | - Xiwen Zhang
- School of Mechanism Engineering & School of Physics, Southeast University, Nanjing 211189, China
| | - Qionghua Zhou
- School of Physics, Southeast University, Nanjing 211189, China
| | - Shijun Yuan
- School of Physics, Southeast University, Nanjing 211189, China
| | - Jinlan Wang
- School of Physics, Southeast University, Nanjing 211189, China
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18
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Acosta CM, Ogoshi E, Souza JA, Dalpian GM. Machine Learning Study of the Magnetic Ordering in 2D Materials. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9418-9432. [PMID: 35133125 DOI: 10.1021/acsami.1c21558] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Magnetic materials have been applied in a large variety of technologies, from data storage to quantum devices. The development of two-dimensional (2D) materials has opened new arenas for magnetic compounds, even when classical theories discourage their examination. Here we propose a machine-learning-based strategy to predict and understand magnetic ordering in 2D materials. This strategy couples the prediction of the existence of magnetism in 2D materials using a random forest and the Shapley additive explanations method with material maps defined by atomic features predicting the magnetic ordering (ferromagnetic or antiferromagnetic). While the random forest model predicts magnetism with an accuracy of 86%, the material maps obtained by the sure independence screening and sparsifying method have an accuracy of ∼90% in predicting the magnetic ordering. Our model indicates that 3d transition metals, halides, and structural clusters with regular transition-metal sublattices have a positive contribution in the total weight deciding the existence of magnetism in 2D compounds. This behavior is associated with the competition between crystal field and exchange splitting. The machine learning model also indicates that the atomic spin orbit coupling (SOC) is a determinant feature for the identification of the patterns separating ferro- from antiferromagnetic order. The proposed strategy is used to identify novel 2D magnetic compounds that, together with the fundamental trends in the chemical and structural space, pave novel routes for experimental exploration.
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Affiliation(s)
| | - Elton Ogoshi
- Federal University of ABC, 09210-580 Santo André, São Paulo, Brazil
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19
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Zhao Y, Liu Q, Xing J, Jiang X, Zhao J. FeSi 2: a two-dimensional ferromagnet containing planar hexacoordinate Fe atoms. NANOSCALE ADVANCES 2022; 4:600-607. [PMID: 36132695 PMCID: PMC9417100 DOI: 10.1039/d1na00772f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Accepted: 12/12/2021] [Indexed: 06/16/2023]
Abstract
As an unconventional bonding pattern different from conventional chemistry, the concept of planar hypercoordinate atoms was first proposed in the molecular system, and it has been recently extended to 2D periodic systems. Using first-principles calculations, herein we predict a stable FeSi2 monolayer with planar hexacoordinate Fe atoms. Due to its abundant multicenter bonds, the FeSi2 monolayer shows excellent thermal and kinetic stability, anisotropic mechanical properties and room-temperature ferromagnetism (T C ∼360 K). Furthermore, we have demonstrated the feasibility of directly growing an FeSi2 monolayer on a Si (110) substrate while maintaining the novel electronic and magnetic properties of the freestanding monolayer. The FeSi2 monolayer synthesized in this way would be compatible with the mature silicon semiconductor technology and could be utilized for spintronic devices.
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Affiliation(s)
- Ying Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology Dalian 116024 China
| | - Qinxi Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology Dalian 116024 China
| | - Jianpei Xing
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology Dalian 116024 China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology Dalian 116024 China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology Dalian 116024 China
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics Nanjing 210016 China
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20
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Qiao W, Jin D, Mi W, Wang D, Yan S, Xu X, Zhou T. Large perpendicular magnetic anisotropy of transition metal dimers driven by polarization switching of two-dimensional ferroelectric In2Se3 substrate. Phys Chem Chem Phys 2022; 24:21966-21974. [DOI: 10.1039/d2cp01864k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Large perpendicular magnetic anisotropy (MA) is highly desirable for realizing atomic-scale magnetic data storage which represents the ultimate limit of the density of magnetic recording. In this work, we study...
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21
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Hao KR, Ma XY, Zhang Z, Lyu HY, Yan QB, Su G. Ferroelectric and Room-Temperature Ferromagnetic Semiconductors in the 2D M IM IIGe 2X 6 Family: First-Principles and Machine Learning Investigations. J Phys Chem Lett 2021; 12:10040-10051. [PMID: 34623167 DOI: 10.1021/acs.jpclett.1c02782] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Inspired by experimentally discovering ferromagnetism and ferroelectricity in two-dimensional (2D) CrGeTe3 and CuInP2S6 with similar geometric structures, respectively, we systematically investigated ferroic properties in a large family of 2D MIMIIGe2X6 (MI and MII = metal elements, X = S/Se/Te) by combining high-throughput first-principles calculations and the machine learning method. We identified 12 stable 2D multiferroics containing simultaneously ferromagnetic (FM) and ferroelectric (FE) properties and 35 2D ferromagnets without FE polarization. Particularly, the predicted FM Curie temperatures (TC) of eight 2D FM+FE semiconductors are close to or above room temperature. The ferroelectricity originates from the spontaneous geometric symmetry breaking induced by the unexpected shift of Ge-Ge atomic pairs and the emergence of Ge lone pair electrons, which also strengthens the p-d orbital hybridization between X atoms and metal atoms, leading to enhanced super-super-exchange interactions and raising the FM TC. Our findings not only enrich the family of 2D ferroic materials and present room-temperature FM semiconductors but also disclose the mechanism of the emerging ferroelectricity and enhanced ferromagnetism, which sheds light on the realization of high temperature multiferroics as well as FM semiconductors.
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Affiliation(s)
- Kuan-Rong Hao
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xing-Yu Ma
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hou-Yi Lyu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qing-Bo Yan
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Gang Su
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- Kavli Institute for Theoretical Sciences and CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
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22
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Qin H, Chen J, Sun B, Tang Y, Ni Y, Chen Z, Wang H, Chen Y. 2D auxetic material with intrinsic ferromagnetism: a copper halide (CuCl 2) monolayer. Phys Chem Chem Phys 2021; 23:22078-22085. [PMID: 34570850 DOI: 10.1039/d1cp02834k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
The discovery of ferromagnetism in monolayer transition metal halides exemplified by CrI3 has opened a new avenue in the field of two-dimensional (2D) magnetic materials, and more such 2D materials are waiting to be explored. Herein, using an unbiased structure search combined with first-principles calculations, we have identified a novel CuCl2 monolayer, which exhibits not only intrinsic ferromagnetism but also auxetic mechanical properties originating from the interplay of lattice and Cu-Cl tetrahedron symmetries. The predicted Curie temperature of CuCl2 reaches ∼47 K, and its ferromagnetism is associated with the strong hybridization between the Cu 3d and Cl 3p states in the configuration. Moreover, upon biaxial tensile strain or carrier doping, the CuCl2 monolayer can be converted from ferromagnetic to non-magnetic and from half-metal to metal. These properties endow this CuCl2 monolayer with great potential for applications in auxetic/spintronic nanodevices.
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Affiliation(s)
- Haifei Qin
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Jiao Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Bai Sun
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yongliang Tang
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuxiang Ni
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Zhongfang Chen
- Department of Chemistry, University of Puerto Rico, Rio Piedras Campus, San Juan, PR 00931, USA.
| | - Hongyan Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China.
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China. .,Beijing Computational Science Research Center, Haidian District, Beijing 100193, China.,Department of Physics and Centre for Advanced Two-Dimensional Materials, National University of Singapore, Singapore 117551, Singapore
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23
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Bikaljević D, González-Orellana C, Peña-Díaz M, Steiner D, Dreiser J, Gargiani P, Foerster M, Niño MÁ, Aballe L, Ruiz-Gomez S, Friedrich N, Hieulle J, Jingcheng L, Ilyn M, Rogero C, Pascual JI. Noncollinear Magnetic Order in Two-Dimensional NiBr 2 Films Grown on Au(111). ACS NANO 2021; 15:14985-14995. [PMID: 34491033 PMCID: PMC8482757 DOI: 10.1021/acsnano.1c05221] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2021] [Indexed: 05/12/2023]
Abstract
Metal halides are a class of layered materials with promising electronic and magnetic properties persisting down to the two-dimensional limit. While most recent studies focused on the trihalide components of this family, the rather unexplored metal dihalides are also van der Waals layered systems with distinctive magnetic properties. Here we show that the dihalide NiBr2 grows epitaxially on a Au(111) substrate and exhibits semiconducting and magnetic behavior starting from a single layer. Through a combination of a low-temperature scanning-tunneling microscopy, low-energy electron diffraction, X-ray photoelectron spectroscopy, and photoemission electron microscopy, we identify two competing layer structures of NiBr2 coexisting at the interface and a stoichiometrically pure layer-by-layer growth beyond. Interestingly, X-ray absorption spectroscopy measurements revealed a magnetically ordered state below 27 K with in-plane magnetic anisotropy and zero-remanence in the single layer of NiBr2/Au(111), which we attribute to a noncollinear magnetic structure. The combination of such two-dimensional magnetic order with the semiconducting behavior down to the 2D limit offers the attractive perspective of using these films as ultrathin crystalline barriers in tunneling junctions and low-dimensional devices.
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Affiliation(s)
- Djuro Bikaljević
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
- Institute
of Physical Chemistry, University of Innsbruck, Innrain 52c, A-6020 Innsbruck, Austria
| | | | - Marina Peña-Díaz
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
| | - Dominik Steiner
- Institute
of Physical Chemistry, University of Innsbruck, Innrain 52c, A-6020 Innsbruck, Austria
| | - Jan Dreiser
- Paul
Scherrer Institut, Forschungsstrasse
111, CH-5232 Villigen, PSI, Switzerland
| | - Pierluigi Gargiani
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Michael Foerster
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Miguel Ángel Niño
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Lucía Aballe
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | - Sandra Ruiz-Gomez
- ALBA
Synchrotron Light Source, Carrer de la Llum, 2-26, 08290 Barcelona, Spain
| | | | | | - Li Jingcheng
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
| | - Maxim Ilyn
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
| | - Celia Rogero
- Centro
de Física de Materiales (CSIC/UPV-EHU), 20018 Donostia-San
Sebastián, Spain
- Donostia
International Physics Center DIPC, 20018 Donostia-San Sebastián, Spain
| | - José Ignacio Pascual
- CIC
nanoGUNE-BRTA, 20018 Donostia-San Sebastián, Spain
- Ikerbasque,
Basque Foundation for Science, 48013 Bilbao, Spain
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24
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Feng Q, Li X, Li X, Yang J. CrSbS 3 monolayer: a potential phase transition ferromagnetic semiconductor. NANOSCALE 2021; 13:14067-14072. [PMID: 34477687 DOI: 10.1039/d1nr03640h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two dimensional intrinsic ferromagnetic semiconductors with controllable magnetic phase transition are highly desirable for spintronics. Nevertheless, reports on their successful experimental realization are still rare. Herein, based on first principles calculations, we propose to achieve such a functional material, namely CrSbS3 monolayer by exfoliating from its bulk crystal. Intrinsic CrSbS3 monolayer is a ferromagnetic half semiconductor with a moderate bandgap of 1.90 eV. It features an intriguing magnetic phase transition from ferromagnetic to antiferromagnetic when applying a small compressive strain (∼2%), making it ideal for fabricating strain-controlled magnetic switches or memories. In addition, the predicted strong anisotropic absorption of visible light and small effective masses make the CrSbS3 monolayer promising for optoelectronic applications.
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Affiliation(s)
- Qingqing Feng
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
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25
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Yao Y, Zhan X, Sendeku MG, Yu P, Dajan FT, Zhu C, Li N, Wang J, Wang F, Wang Z, He J. Recent progress on emergent two-dimensional magnets and heterostructures. NANOTECHNOLOGY 2021; 32:472001. [PMID: 34315143 DOI: 10.1088/1361-6528/ac17fd] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 07/26/2021] [Indexed: 06/13/2023]
Abstract
Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrI3and Gr2Ge2Te6nanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit. This review gives a comprehensive overview of the recent progress on the emergent 2D magnets and heterostructures. Firstly, several kinds of typical 2D magnetic materials discovered in the last few years and their fabrication methods are summarized in detail. Secondly, the current strategies for manipulating magnetic properties in 2D materials are further discussed. Then, the recent advances on the construction of representative van der Waals magnetic heterostructures and their respective performance are provided. With the hope of motivating the researchers in this area, we finally offered the challenges and outlook on 2D magnetism.
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Affiliation(s)
- Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Peng Yu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Fekadu Tsegaye Dajan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuanchao Zhu
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, People's Republic of China
| | - Ningning Li
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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26
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Chen S, Sun H, Ding J, Wu F, Huang C, Kan E. Unconventional distortion induced two-dimensional multiferroicity in a CrO 3 monolayer. NANOSCALE 2021; 13:13048-13056. [PMID: 34477788 DOI: 10.1039/d1nr02335g] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multistate data storage. However, intrinsic 2D multiferroic semiconductors with high thermal stability are still rare to date. Here, we propose a new mechanism of single-phase multiferroicity. Based on first-principles calculations, we predicted that in a CrO3 monolayer, the unconventional distortion of the square antiprismatic crystal field on Cr-d orbitals will induce an in-plane electric polarization, making this material a single-phase multiferroic semiconductor. Importantly, the magnetic Curie temperature is estimated to be ∼220 K, which is quite high as compared to those of the recently reported 2D ferromagnetic and multiferroic semiconductors. Moreover, both ferroelectric and antiferroelectric phases are observed, providing opportunities for electrical control of magnetism and energy storage and conversion applications. These findings provide a comprehensive understanding of the magnetic and electric behavior in 2D multiferroics and will motivate further research on the application of related 2D electromagnetics and spintronics.
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Affiliation(s)
- Shanbao Chen
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing and Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
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27
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Gao P, Li X, Yang J. Thickness Dependent Magnetic Transition in Few Layer 1T Phase CrTe 2. J Phys Chem Lett 2021; 12:6847-6851. [PMID: 34279945 DOI: 10.1021/acs.jpclett.1c01901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Room temperature two-dimensional (2D) ferromagnetism is highly desired in practical spintronics applications. Recently, 1T phase CrTe2 (1T-CrTe2) nanosheets with 5 and thicker layers have been successfully synthesized, which all exhibit the properties of ferromagnetic (FM) metals with Curie temperatures around 305 K. However, whether the ferromagnetism therein can be maintained when continuously reducing the nanosheet's thickness to monolayer limit remains unknown. Here, through first-principles calculations, we explore the evolution of magnetic properties of 1 to 6 layer CrTe2 nanosheets and several interesting points are found: First, unexpectedly, monolayer CrTe2 prefers a zigzag antiferromagnetic (AFM) state with its energy much lower than that of FM state. Second, in 2 to 4 layer CrTe2, both the intralayer and interlayer magnetic coupling are AFM. Last, when the number of layers is equal to or greater than 5, the intralayer and interlayer magnetic coupling become FM. Such highly thickness dependent magnetism provides a new perspective to control the magnetic properties of 2D materials.
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Affiliation(s)
- Pengfei Gao
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
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28
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Goff A, Aukarasereenont P, Nguyen CK, Grant R, Syed N, Zavabeti A, Elbourne A, Daeneke T. An exploration into two-dimensional metal oxides, and other 2D materials, synthesised via liquid metal printing and transfer techniques. Dalton Trans 2021; 50:7513-7526. [PMID: 33977926 DOI: 10.1039/d0dt04364h] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) metal oxides can be difficult to synthesise, and scaling up production using traditional methods is challenging. However, a new liquid metal-based technique, that utilises both "top-down" and "bottom-up" processes, has recently been introduced. These liquids oxidise to form an oxide surface "skin" which may be exfoliated as a 2D flake and subsequently used in various electronic devices and chemical reactions.
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Affiliation(s)
- Abigail Goff
- School of Engineering, RMIT University, Melbourne, VIC, 3001 Australia.
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29
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He S, Zhou P, Yang Y, Wang W, Sun LZ. 1T-CrO 2 monolayer: a high-temperature Dirac half-metal for high-speed spintronics. NANOSCALE ADVANCES 2021; 3:3093-3099. [PMID: 36133660 PMCID: PMC9418590 DOI: 10.1039/d0na00884b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2020] [Accepted: 03/26/2021] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials with complete spin-polarization, high-speed conduction electrons, large Curie temperatures and robust ferromagnetic ground states are desirable for spintronic applications. Based on first-principles calculations, we demonstrate that the 1T-CrO2 monolayer is an intrinsic 3d ferromagnetic Dirac half metal (DHM) with two symmetry protected Dirac cones near the Fermi level. The Fermi velocities (3.21 × 105 m s-1 and 4.85 × 105 m s-1) of the Dirac cones are in the same order as that of graphene, indicating its excellent transport properties. Its 2.48 eV half-metallic gap is large enough to prevent the spin-flip transition. Moreover, the two Dirac cones are robust against biaxial strain of up to ±4%. The robust ferromagnetism is mainly contributed by the 3d states of Cr and its Curie temperature is up to 507 K. Our results indicate that the ferromagnetic 1T-CrO2 monolayer is a promising candidate for high temperature, high efficiency spintronics applications.
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Affiliation(s)
- Shenda He
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University Xiangtan 411105 China
| | - Pan Zhou
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University Xiangtan 411105 China
| | - Yi Yang
- School of Materials Science and Engineering, Xiangtan University Xiangtan 411105 China
| | - Wei Wang
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University Xiangtan 411105 China
| | - L Z Sun
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University Xiangtan 411105 China
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30
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Zhong X, Oubla M, Wang X, Huang Y, Zeng H, Wang S, Liu K, Zhou J, He L, Zhong H, Alonso-Vante N, Wang CW, Wu WB, Lin HJ, Chen CT, Hu Z, Huang Y, Ma J. Boosting oxygen reduction activity and enhancing stability through structural transformation of layered lithium manganese oxide. Nat Commun 2021; 12:3136. [PMID: 34035291 PMCID: PMC8149866 DOI: 10.1038/s41467-021-23430-3] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Accepted: 04/28/2021] [Indexed: 11/30/2022] Open
Abstract
Structural degradation in manganese oxides leads to unstable electrocatalytic activity during long-term cycles. Herein, we overcome this obstacle by using proton exchange on well-defined layered Li2MnO3 with an O3-type structure to construct protonated Li2-xHxMnO3-n with a P3-type structure. The protonated catalyst exhibits high oxygen reduction reaction activity and excellent stability compared to previously reported cost-effective Mn-based oxides. Configuration interaction and density functional theory calculations indicate that Li2-xHxMnO3-n has fewer unstable O 2p holes with a Mn3.7+ valence state and a reduced interlayer distance, originating from the replacement of Li by H. The former is responsible for the structural stability, while the latter is responsible for the high transport property favorable for boosting activity. The optimization of both charge states to reduce unstable O 2p holes and crystalline structure to reduce the reaction pathway is an effective strategy for the rational design of electrocatalysts, with a likely extension to a broad variety of layered alkali-containing metal oxides.
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Affiliation(s)
- Xuepeng Zhong
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China
| | - M'hamed Oubla
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China
| | - Xiao Wang
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Yangyang Huang
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China
| | - Huiyan Zeng
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China
| | - Shaofei Wang
- Australian Centre for Neutron Scattering, Australian Nuclear Science and Technology Organization, Kirrawee DC, NSW, Australia
| | - Kun Liu
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Lunhua He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
- Spallation Neutron Source Science Center, Dongguan, China
| | - Haihong Zhong
- IC2MP, UMR-CNRS 7285, University of Poitiers, Poitiers, France
| | | | - Chin-Wei Wang
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Wen-Bin Wu
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Hong-Ji Lin
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Chien-Te Chen
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Zhiwei Hu
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Yunhui Huang
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China.
| | - Jiwei Ma
- Shanghai Key Laboratory for R&D and Application of Metallic Functional Materials, Institute of New Energy for Vehicles, School of Materials Science and Engineering, Tongji University, Shanghai, China.
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31
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Miao N, Sun Z. Computational design of two‐dimensional magnetic materials. WIRES COMPUTATIONAL MOLECULAR SCIENCE 2021. [DOI: 10.1002/wcms.1545] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Naihua Miao
- School of Materials Science and Engineering Beihang University Beijing China
- Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary Science, Beihang University Beijing China
| | - Zhimei Sun
- School of Materials Science and Engineering Beihang University Beijing China
- Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary Science, Beihang University Beijing China
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32
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Dou M, Li H, Yao Q, Wang J, Liu Y, Wu F. Room-temperature ferromagnetism in two-dimensional transition metal borides: a first-principles investigation. Phys Chem Chem Phys 2021; 23:10615-10620. [PMID: 33903862 DOI: 10.1039/d1cp00052g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
It is currently technologically important to predict new two-dimensional (2D) ferromagnetic materials for next-generation information storage media. However, discovered 2D ferromagnetic materials are still rare. Here, we explored the fact that 2D transition metal borides are potential room-temperature 2D ferromagnetic materials. By performing first-principles calculations, we found that the CrB monolayer is a ferromagnetic (FM) metal, while the FeB monolayer is a typically antiferromagnetic (AFM) semiconductor. Interestingly, both CrB and FeB monolayers are FM metals with a moderate magnetic anisotropy energy by saturating with functional groups. Monte Carlo simulations show that the Curie temperature (Tc) of the CrB monolayer is about 520 K, which is further increased to 580 K and 570 K through -F and -OH chemical modification, while Tc is about 250 K, 275 K and 300 K for the FeBF, FeBO and FeBOH monolayer, respectively. Thus, the 2D transition metal borides have great potential applications in information storage devices.
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Affiliation(s)
- Min Dou
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Huan Li
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China
| | - Qingnian Yao
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Jiabao Wang
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Yunfei Liu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
| | - Fang Wu
- College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China.
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33
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Xie WQ, Lu ZW, He CC, Yang XB, Zhao YJ. Theoretical study of tunable magnetism of two-dimensional MnSe 2through strain, charge, and defect. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:215803. [PMID: 33588397 DOI: 10.1088/1361-648x/abe64c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2020] [Accepted: 02/15/2021] [Indexed: 06/12/2023]
Abstract
Two-dimensional transition metal dichalcogenide MnSe2(2D-MnSe2) with Curie temperature approximate to 300 K has a significant spintronic application on thin-film devices. We demonstrate theoretically a tunable magnetic transition of 2D-MnSe2between anti-ferromagnetic (AFM) metal and ferromagnetic (FM) half metal as strain increasing. Mechanism of that transition involves a competition betweend-p-dthrough-bond andd-ddirect interaction in 2D-MnSe2. Hole doping is an alternative way to enhance the stability of FM coupling. Adsorption (including Li, Na, Cl and F) and vacancy (Mn and Se) studies confirm that the controllable magnetism of 2D-MnSe2is related to both interaction competition and charge doping. Tensile strains can greatly amplify through-bond interaction and exchange parameters, resulting in a sharp increase of Curie temperature.
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Affiliation(s)
- Wen-Qiang Xie
- Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Zhi-Wei Lu
- Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Chang-Chun He
- Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China
| | - Xiao-Bao Yang
- Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China
- Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640, People's Republic of China, Tel: +86-20-87110426; Fax: +86-20-87112837
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou 510640, People's Republic of China
- Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, South China University of Technology, Guangzhou 510640, People's Republic of China, Tel: +86-20-87110426; Fax: +86-20-87112837
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34
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Luo F, Hao X, Jia Y, Yao J, Meng Q, Zhai S, Wu J, Dou W, Zhou M. Functionalization induced quantum spin Hall to quantum anomalous Hall phase transition in monolayer jacutingaite. NANOSCALE 2021; 13:2527-2533. [PMID: 33475641 DOI: 10.1039/d0nr06889f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
As novel states of quantum matter, quantum spin Hall (QSH) and quantum anomalous Hall (QAH) states have attracted considerable interest in condensed matter and materials science communities. Recently, a monolayer of the naturally occurring mineral jacutingaite (Pt2HgSe3), was theoretically proposed to be a large-gap QSH insulator and experimentally confirmed. Here, based on first-principles calculations and tight-binding modeling, we demonstrate QSH to QAH phase transition in jacutingaite by chemical functionalization with chalogen. We show that two-dimensional (2D) chalogenated jacutingaite, Pt2HgSe3-X (X = S, Se, Te), is ferromagnetic with Curie temperature up to 316 K, and it exhibits QAH effect with chiral edge states inside a sizeable topological gap. The physical mechanism lies in the adsorption induced transformation of the original Kane-Mele model into an effective four-band model involving (px, py) orbitals on a hexagonal lattice, so that the topological gap size can be controlled by spin-orbit coupling strength of the chalogen (0.28 eV for Pt2HgSe3-Te). These results not only show the promise of functionalization in orbital-engineering of 2D functional structures, but also provide an ideal and practical platform for achieving exotic topological phases for dissipationless transport and quantum computing.
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Affiliation(s)
- Fangxue Luo
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Xiamin Hao
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Yizhen Jia
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Junjie Yao
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Qingling Meng
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Shuwei Zhai
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Jinge Wu
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Wenzhen Dou
- School of Physics, Beihang University, Beijing 100191, P. R. China.
| | - Miao Zhou
- School of Physics, Beihang University, Beijing 100191, P. R. China.
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35
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Wang Y, Liang Z, Zheng H, Cao R. Recent Progress on Defect‐rich Transition Metal Oxides and Their Energy‐Related Applications. Chem Asian J 2020; 15:3717-3736. [DOI: 10.1002/asia.202000925] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 09/23/2020] [Indexed: 02/03/2023]
Affiliation(s)
- Yanzhi Wang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Zuozhong Liang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Haoquan Zheng
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering Shaanxi Normal University Xi'an 710119 P. R. China
| | - Rui Cao
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering Shaanxi Normal University Xi'an 710119 P. R. China
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Liu L, Chen S, Lin Z, Zhang X. A Symmetry-Breaking Phase in Two-Dimensional FeTe 2 with Ferromagnetism above Room Temperature. J Phys Chem Lett 2020; 11:7893-7900. [PMID: 32787292 DOI: 10.1021/acs.jpclett.0c01911] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recently, ferromagnetism observed in monolayer two-dimensional (2D) materials has attracted attention due to the promise of its application in next-generation spintronics. Here, we predict a symmetry-breaking phase in 2D FeTe2 that differs from conventional transition metal ditellurides shows superior stability and room-temperature ferromagnetism. Through density functional theory calculations, we find the exchange interactions in FeTe2 consist of short-range superexchange and long-range oscillatory exchanges mediated by itinerant electrons. For six nearest neighbors, the exchange constants are calculated to be 50.95, 33.41, 2.70, 11.02, 14.46, and -4.12 meV. Furthermore, the strong relativistic effects on Te2+ induce giant out-of-plane exchange anisotropy and open up a significantly large spin wave gap (ΔSW) of 1.22 meV. All of this leads to robust ferromagnetism with the Tc surpassing 423 K, which is predicted by the renormalization group Monte Carlo method, sufficiently higher than room temperature. Our findings shed light on the promising future of FeTe2 in 2D magnetic research and spintronic applications.
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Affiliation(s)
- Liang Liu
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Songsong Chen
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zezhou Lin
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China
| | - Xi Zhang
- Institute of Nanosurface Science and Engineering, Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics Engineering, Shenzhen University, Shenzhen 518060, China
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37
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Li BG, Zheng YF, Cui H, Wang P, Zhou TW, Wang DD, Chen H, Yuan HK. First-principles investigation of a new 2D magnetic crystal: Ferromagnetic ordering and intrinsic half-metallicity. J Chem Phys 2020; 152:244704. [PMID: 32610998 DOI: 10.1063/5.0013393] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023] Open
Abstract
The development of two-dimensional (2D) magnetic materials with half-metallic characteristics is of great interest because of their promising applications in spintronic devices with high circuit integration density and low energy consumption. Here, by using density functional theory calculations, ab initio molecular dynamics, and Monte Carlo simulation, we study the stability, electronic structure, and magnetic properties of a OsI3 monolayer, of which crystalline bulk is predicted to be a van der Waals layered ferromagnetic (FM) semiconductor. Our results reveal that the OsI3 monolayer can be easily exfoliated from the bulk phase with small cleavage energy and is energetically and thermodynamically stable at room temperature. Intrinsic half-metallicity with a wide bandgap and FM ordering with an estimated TC = 35 K are found for the OsI3 monolayer. Specifically, the FM ordering can be maintained under external biaxial strain from -2% to 5%. The in-plane magnetocrystalline anisotropy energy of the 2D OsI3 monolayer reaches up to 3.89 meV/OsI3, which is an order larger than that of most magnetic 2D materials such as the representative monolayer CrI3. The excellent magnetic features of the OsI3 monolayer therefore render it a promising 2D candidate for spintronic applications.
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Affiliation(s)
- B G Li
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - Y F Zheng
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - H Cui
- Shaanxi Key Laboratory of Industrial Automation, Shaanxi University of Technology, Hanzhong 723001, China
| | - P Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - T W Zhou
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - D D Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - H Chen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
| | - H K Yuan
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China
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38
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Xie H, Qie Y, Muhammad I, Sun Q. 2D CrCl 2(pyrazine) 2 monolayer: high-temperature ferromagnetism and half-metallicity. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:135801. [PMID: 31778979 DOI: 10.1088/1361-648x/ab5ca4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The ferromagnetism in Cr-based monolayers is of current interest (2019 Nat. Nanotechnol. 14 408), however, the Curie temperature is low. How can we enhance the thermal stability of ferromagnetism? Motivated by the recent synthesis of the layered conductive magnet CrCl2(pyrazine)2 (2018 Nat. Chem. 10 1056), we perform first-principles calculations and Monte Carlo simulations to demonstrate that the exfoliated 2D CrCl2(pyrazine)2 monolayer is stable dynamically and thermally, and it is a ferromagnetic half-metal with a sizeable band gap of 2.8 eV in the semiconducting channel, and the strong in-plane Cr-Cr interaction results in a large magnetic anisotropy energy. Moreover, the sheet exhibits a high Curie temperature of 350 K due to the enhanced magnetic exchange interaction resulting from the aromatic property of pyrazine. All of these intriguing features endow 2D CrCl2(pyrazine)2 sheet with good potentials for applications in nanoscale spintronics devices.
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Affiliation(s)
- Huanhuan Xie
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People's Republic of China
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39
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Yang Y, Guo P, Luo Y. Strain modulated ferromagnetic phase transitions in monolayer FeCl2 through exchange competitions: the first-principle and Monte Carlo simulations. Phys Chem Chem Phys 2020; 22:17291-17298. [DOI: 10.1039/d0cp01422b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Strain drives the magnetic phase transition of 1T-FeCl2 through exchange competitions.
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Affiliation(s)
- Ya Yang
- Key Laboratory of Microelectronics and Energy of Henan Province
- Henan Joint International Research Laboratory of New Energy Storage Technology
- School of Physics and Electronic Engineering
- Xinyang Normal University
- Xinyang 464000
| | - Peiyin Guo
- Analysis & Testing Center
- Xinyang Normal University
- Xinyang 464000
- P. R. China
| | - Yongsong Luo
- Key Laboratory of Microelectronics and Energy of Henan Province
- Henan Joint International Research Laboratory of New Energy Storage Technology
- School of Physics and Electronic Engineering
- Xinyang Normal University
- Xinyang 464000
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40
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Smiri A, Gerber IC, Lounis S, Jaziri S. Dependence of the magnetic interactions in MoS 2 monolayer on Mn-doping configurations. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:465802. [PMID: 31349244 DOI: 10.1088/1361-648x/ab360b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Understanding the magnetic properties of the various Mn doping configurations that can be encountered in 2H-MoS2 monolayer could be beneficial for its use in spintronics. Using density functional theory plus Hubbard term (DFT + U) approach, we study how a single isolated, double- and triple-substitution configurations of Mn atoms within a MoS2 monolayer could contribute to its total magnetization. We find that the doping-configuration plays a critical role in stabilizing a ferromagnetic state in a Mn-doped MoS2 monolayer. Indeed, the Mn-Mn magnetic interaction is found to be ferromagnetic and strong for Mn in equidistant substitution positions where the separation average range of 6-11 [Formula: see text]. The strongest ferromagnetic interaction is found when substitutions are in second nearest neighbor Mo-sites of the armchair chain. Clustering is energetically favorable but it strongly reduces the ferromagnetic exchange energies. Furthermore, in term of electronic properties, we show that the Mn-doped MoS2 monolayer can change its electronic behavior from semiconductor to half-metallic depending on the doping configuration. Our results suggest that ordering the Mn dopants on MoS2 monolayer is needed to increase its potential ferromagnetism.
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Affiliation(s)
- Adlen Smiri
- Faculté des Sciences de Bizerte, Laboratoire de Physique des Matériaux: Structure et Propriétés, Université de Carthage, 7021 Jarzouna, Tunisia. LPCNO, Université Fédérale de Toulouse Midi-Pyrénées, INSA-CNRS-UPS, 135 Av. de Rangueil, 31077 Toulouse, France
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41
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Li X, Yang J. Computational Design of One‐Dimensional Ferromagnetic Semiconductors in Transition Metal Embedded Stannaspherene Nanowires. CHINESE J CHEM 2019. [DOI: 10.1002/cjoc.201900166] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Xingxing Li
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum PhysicsUniversity of Science and Technology of China Hefei Anhui 230026 China
| | - Jinlong Yang
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum PhysicsUniversity of Science and Technology of China Hefei Anhui 230026 China
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42
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Li R, Yang B, Li F, Wang Y, Du X, Yan Y. Strain-induced N-N bonding and magnetic changes in monolayer intrinsic ferromagnetic TmN 2 (Tm = Tc and Nb). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:335801. [PMID: 31063984 DOI: 10.1088/1361-648x/ab1fbb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The modulation of magnetic property in two-dimensional (2D) intrinsic ferromagnets is important for their future application in spintronic devices at the nanoscale. In this work, using first-principles calculation, we investigate the effects of strain on the structures, electronic structures and magnetic properties of monolayer 1H-NbN2 and 1H-TcN2. The results show that both the unstrained monolayer 1H-NbN2 and 1H-TcN2 are 2D intrinsically ferromagnetic (FM) metal, in which the magnetic moment of the 1H-NbN2 and 1H-TcN2 comes mainly from the d orbitals of Nb atom and the p orbitals of N atom, respectively. Remarkably, two neighboring N atoms in the unstrained 1H-NbN2 form N-N bond, while those in the 1H-TcN2 do not. When lattice constant a increases to 3.17 Å, monolayer 1H-TcN2 undergoes N-N nonbonding-bonding transition at which the distance between the N atoms d N-N suddenly drops by almost 25%. In particular, due to the bonding between two neighboring N atoms, the magnetic moment of N atoms in 1H-TcN2 are quenched and the ground state transfers to non-magnetic. In contrast, when a decreases to 3.18 Å, monolayer 1H-NbN2 undergoes N - N bonding-nonbonding transition at which the d N-N suddenly increases from 1.79 Å to 1.97 Å. The N-N bonding-nonbonding transition induces the magnetic moments to transfer from the d orbitals of Nb atom to the p orbitals of N atom, while ground state of monolayer 1H-NbN2 remains FM metal.
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Affiliation(s)
- Ruixin Li
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun 130012, People's Republic of China
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43
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Zhou B, Li Z, Wang J, Niu X, Luan C. Tunable valley splitting and an anomalous valley Hall effect in hole-doped WS 2 by proximity coupling with a ferromagnetic MnO 2 monolayer. NANOSCALE 2019; 11:13567-13575. [PMID: 31290895 DOI: 10.1039/c9nr03315g] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) valleytronic systems can provide information storage and processing advantages that complement or surpass those of conventional charge and spin-based semiconductor technologies. For efficient use of the valley degree of freedom, the major challenge currently is to lift the valley degeneracy to achieve valley splitting for further valleytronic operations. In this work, we demonstrate that valley splitting and efficient hole-doping in monolayer WS2 can be achieved by the proximity coupling effect of 2D ferromagnetic MnO2 using density functional theory and Berry curvature calculations. A valley splitting of 43 meV is induced in the valence band of WS2. The efficient hole-doping moves the Fermi level just located between the valence band maxima of the K and K' valleys, which is suitable for the valley-polarized transport. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization and can be tuned continually by applying interfacial compression or an electric field. Owing to the sizable Berry curvature and time-reversal symmetry breaking of WS2, a spin- and valley-polarized anomalous Hall current can be generated. Then, we proposed a valleytronic device that can be used as a filter for both the spin and valley based on this WS2/MnO2 van der Waals heterostructure.
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Affiliation(s)
- Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Zheng Li
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Jiaming Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xuechen Niu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Chongbiao Luan
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621999, China
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44
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Zhou B, Li Z, Wang J, Wang K. Superior spin-polarized electronic structure in MoS 2/MnO 2 heterostructures with an efficient hole injection. Phys Chem Chem Phys 2019; 21:10706-10715. [PMID: 31086862 DOI: 10.1039/c9cp01146c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials with intrinsic magnetism and low hole injection barriers to transition metal dichalcogenides are crucial to develop dopant-free all-2D p-type spin field effect transistors for CMOS logic and spintronic applications. Here, the electronic structures of 2D MoS2/MnO2 heterostructures are investigated by first-principles calculations, where the monolayered MnO2 has two polymorphs including magnetic metal h-MnO2 and magnetic semiconductor t-MnO2. Both the MoS2/h-MnO2 and MoS2/t-MnO2 heterostructures show p-type doping for MoS2. In the MoS2/h-MnO2 model with a semiconductor/metal contact, the charge transfer can affect the occupation of Mn 3d and O 2p orbitals, which results in a half-metallic characteristic of the heterostructure with a Schottky barrier height of only 0.15 eV. However, the MoS2/t-MnO2 model with a semiconductor/semiconductor contact shows a spin-gapless electronic structure. Moreover, the type-II band alignment of the MoS2/t-MnO2 heterostructure can facilitate the effective separation of electrons and holes, which can enhance the lifetime of interlayer excitons. The long interlayer exciton lifetime makes it a good candidate for electron-hole separators and related optoelectronic devices. By applying vertical compression, the spin channel of the half-metallic MoS2/h-MnO2 heterostructure can be reversed and the spin-gapless band structure of the MoS2/t-MnO2 heterostructure becomes half-metallic. Furthermore, by applying a gate voltage, the Schottky barrier height and the spin-gapless gap can be tailored. The tunable spin polarization, spin-polarized direction and exciton recombination rate provide a feasible way toward spintronics and optoelectronics.
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Affiliation(s)
- Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Zheng Li
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Jiaming Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Kangqiang Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
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45
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Li X, Yang J. Toward Room-Temperature Magnetic Semiconductors in Two-Dimensional Ferrimagnetic Organometallic Lattices. J Phys Chem Lett 2019; 10:2439-2444. [PMID: 31034233 DOI: 10.1021/acs.jpclett.9b00769] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Obtaining room-temperature magnetically ordered two-dimensional (2D) semiconductors is urgently needed for high-speed nanospintronic devices but remains a big challenge. Here, we propose a potential route to solve this issue by constructing ferrimagnetic semiconductors in 2D metal organic frameworks, taking advantage of the high Curie temperature of ferrimagnetic semiconductors and easy tunability of metal organic frameworks. The proposal is confirmed by first-principles design of 2D metal organic frameworks with conjugated electron acceptors diketopyrrolopyrrole (DPP) as organic linkers and transition metal Cr (V) as nodes. The robust ferrimagnetic ordering comes from the strong direct exchange interaction between d-electron magnetic moments on transition metals and charge transfer-induced p-electron magnetic moments on DPPs, which can be modulated facilely by reducing the d-p orbital interaction distance via moderate compressive strain or increasing the d-p orbital charge transfer through introducing electron-withdrawing groups into the DPP moiety.
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Affiliation(s)
- Xingxing Li
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
| | - Jinlong Yang
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
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46
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Lu M, Yao Q, Xiao C, Huang C, Kan E. Mechanical, Electronic, and Magnetic Properties of NiX 2 (X = Cl, Br, I) Layers. ACS OMEGA 2019; 4:5714-5721. [PMID: 31459724 PMCID: PMC6648776 DOI: 10.1021/acsomega.9b00056] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2019] [Accepted: 03/06/2019] [Indexed: 05/26/2023]
Abstract
Since the recent experimental discovery of the CrI3 and CrGeTe3 monolayers, van der Waals (vdW) layered transition metal compounds have been recognized as promising candidates to realize 2D ferromagnetic (FM) semiconductors. However, until now, only limited compounds have been proposed to be ferromagnetic semiconductors. Here, on the basis of first-principles calculations, we report that the monolayer, Janus monolayer, and bilayer of NiX2 (X = Cl, Br, I) are intrinsic 2D FM semiconductors. Our results show that exfoliation energy of the NiX2 monolayer is smaller than that of graphene, and all studied NiX2 layers show semiconducting band gaps. The predicted Curie temperature values for NiX2 (X = Cl, Br, I) monolayers ranged from 120 to 170 K with Monte Carlo simulations. For the Janus monolayer, we found that the spin interaction shows a very strong magnetoelectric coupling under an external electric field. Furthermore, for the bilayer of NiX2, our results show that the interlayer coupling is quite weak, indicating the possibility of tuning the magnetic coupling through external manipulations.
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Affiliation(s)
- Min Lu
- Department
of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China
| | - Qiushi Yao
- Department
of Physics and Shenzhen Institute for Quantum Science and Technology, Southern University of Science and Technology, Shenzhen 518055, China
| | - Chuanyun Xiao
- Department
of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China
| | - Chengxi Huang
- Department
of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China
| | - Erjun Kan
- Department
of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, P. R. China
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47
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Kumar S, Mondal C, Pathak B. Double-Exchange Magnetic Interactions in High-Temperature Ferromagnetic Iron Chalcogenide Monolayers. Chemphyschem 2019; 20:873-880. [PMID: 30724434 DOI: 10.1002/cphc.201900002] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2019] [Indexed: 11/07/2022]
Abstract
Smythite ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub><mml:mrow><mml:mi>F</mml:mi> <mml:mi>e</mml:mi></mml:mrow> <mml:mn>3</mml:mn></mml:msub> <mml:msub><mml:mi>S</mml:mi> <mml:mn>4</mml:mn></mml:msub> </mml:mrow> </mml:math> ) is an iron-based chalcogenide with a lamellar structure, different from the compositionally identical mineral greigite. Owing to their natural abundance, such transition metal chalcogenides are promising materials for low-cost spintronic-based devices. Herein, we discuss the charge transfer processes and complex magnetic ordering in a two-dimensional (2D) smythite lattice. We find that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> <mml:mo>/</mml:mo> <mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>3</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> </mml:mrow> </mml:math> redox couple and complex magnetic ordering are governing factors in the charge transfer processes. A very strong ferromagnetic in-lattice coupling is also observed, which is attributed to the presence of three Fe-centres. To describe the magnetic behaviour molecular and periodic approaches have been considered. We found a substantial increase in Curie temperature with applied mechanical stress due to opening of the double exchange interaction angle. We also observe an in-plane Jahn-Teller distortion, which is further confirmed by the spin-orbit counter plot. Our study thus provides an insight into the double exchange mechanism favoured by the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>2</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> <mml:mo>/</mml:mo> <mml:mi>F</mml:mi> <mml:msup><mml:mrow><mml:mi>e</mml:mi></mml:mrow> <mml:mrow><mml:mn>3</mml:mn> <mml:mo>+</mml:mo></mml:mrow> </mml:msup> </mml:mrow> </mml:math> redox couple and results in a strong ferromagnetic ordering.
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Affiliation(s)
- Sourabh Kumar
- Discipline of Chemistry, Indian Institute of Technology (IIT), Indore, Indore, 453552, India
| | - Chiranjit Mondal
- Discipline of Metallurgy Engineering and Material Science, Indian Institute of Technology (IIT), Indore, Indore, 453552, India
| | - Biswarup Pathak
- Discipline of Chemistry, Indian Institute of Technology (IIT), Indore, Indore, 453552, India.,Discipline of Metallurgy Engineering and Material Science, Indian Institute of Technology (IIT), Indore, Indore, 453552, India
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48
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Liu Y, Zhang S, He J, Wang ZM, Liu Z. Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials. NANO-MICRO LETTERS 2019; 11:13. [PMID: 34137973 PMCID: PMC7770868 DOI: 10.1007/s40820-019-0245-5] [Citation(s) in RCA: 68] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2018] [Accepted: 01/28/2019] [Indexed: 05/03/2023]
Abstract
With a large number of researches being conducted on two-dimensional (2D) materials, their unique properties in optics, electrics, mechanics, and magnetics have attracted increasing attention. Accordingly, the idea of combining distinct functional 2D materials into heterostructures naturally emerged that provides unprecedented platforms for exploring new physics that are not accessible in a single 2D material or 3D heterostructures. Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high-quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. In this review, we present a summary of the latest progresses in fabrications, properties, and applications of different types of 2D heterostructures, followed by the discussions on present challenges and perspectives of further investigations.
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Affiliation(s)
- Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China.
| | - Siyu Zhang
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, 410083, Hunan, People's Republic of China
| | - Zhiming M Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China.
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW, 2006, Australia.
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Heard CJ, Čejka J, Opanasenko M, Nachtigall P, Centi G, Perathoner S. 2D Oxide Nanomaterials to Address the Energy Transition and Catalysis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1801712. [PMID: 30132995 DOI: 10.1002/adma.201801712] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2018] [Revised: 05/18/2018] [Indexed: 05/24/2023]
Abstract
2D oxide nanomaterials constitute a broad range of materials, with a wide array of current and potential applications, particularly in the fields of energy storage and catalysis for sustainable energy production. Despite the many similarities in structure, composition, and synthetic methods and uses, the current literature on layered oxides is diverse and disconnected. A number of reviews can be found in the literature, but they are mostly focused on one of the particular subclasses of 2D oxides. This review attempts to bridge the knowledge gap between individual layered oxide types by summarizing recent developments in all important 2D oxide systems including supported ultrathin oxide films, layered clays and double hydroxides, layered perovskites, and novel 2D-zeolite-based materials. Particular attention is paid to the underlying similarities and differences between the various materials, and the subsequent challenges faced by each research community. The potential of layered oxides toward future applications is critically evaluated, especially in the areas of electrocatalysis and photocatalysis, biomass conversion, and fine chemical synthesis. Attention is also paid to corresponding novel 3D materials that can be obtained via sophisticated engineering of 2D oxides.
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Affiliation(s)
- Christopher J Heard
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 8, 128 43, Prague 2, Czech Republic
| | - Jiří Čejka
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 8, 128 43, Prague 2, Czech Republic
- J. Heyrovský Institute of Physical Chemistry, Czech Academy of Science, Dolejškova 3, 182 23, Prague 8, Czech Republic
| | - Maksym Opanasenko
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 8, 128 43, Prague 2, Czech Republic
| | - Petr Nachtigall
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 8, 128 43, Prague 2, Czech Republic
| | - Gabriele Centi
- Dept.s MIFT and ChiBioFarAm-Industrial Chemistry, University of Messina, ERIC aisbl and CASPE/INSTM, V.le F. Stagno S'Alcontres 31, 98166, Messina, Italy
| | - Siglinda Perathoner
- Dept.s MIFT and ChiBioFarAm-Industrial Chemistry, University of Messina, ERIC aisbl and CASPE/INSTM, V.le F. Stagno S'Alcontres 31, 98166, Messina, Italy
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Nie K, Wang X, Mi W. Magnetic proximity effect induced spin-dependent electronic structure in two-dimensional SnO by half-metallic monolayer CrN ferromagnet. Phys Chem Chem Phys 2019; 21:6984-6990. [DOI: 10.1039/c9cp00690g] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structure and magnetic anisotropy of a 2D SnO/CrN heterostructure can be tailored by strains and interlayer distances.
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Affiliation(s)
- Kai Nie
- Tianjin Key Laboratory of Film Electronic & Communicate Devices
- School of Electrical and Electronic Engineering
- Tianjin University of Technology
- Tianjin 300384
- China
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices
- School of Electrical and Electronic Engineering
- Tianjin University of Technology
- Tianjin 300384
- China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology
- School of Science
- Tianjin University
- Tianjin 300354
- China
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