Recent Progress in Two-Dimensional Nanomaterials for Laser Protection

The Nobel Prize in Physics 2018, “For groundbreaking inventions in the field of laser physics”, went to Arthur Ashkin and Gérard Mourou and Donna Strickland. Their inventions have revolutionized laser physics and greatly promoted the development of laser instruments, which have penetrated into many aspects of people’s daily lives. However, for the purpose of protecting human eyes or optical instruments from being damaged by both pulsed and continuous wave laser radiation, the research on laser protective materials is of particular significance. Due to the intriguing and outstanding physical, chemical, and structural properties, two-dimensional (2D) nanomaterials have been extensively studied as optical limiting (OL) materials owing to their broadband nonlinear optical (NLO) response and fast carrier relaxation dynamics that are important for reducing the laser intensity. This review systematically describes the OL mechanisms and the recent progress in 2D nanomaterials for laser protection.

Microfocus Laser-Angle-Resolved Photoemission on Encapsulated Mono-, Bi-, and Few-Layer 1T'-WTe2

Two-dimensional crystals of semi-metallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal in few-layer 1T'-WTe₂ and of a quantum spin Hall state in monolayers of the same material. Understanding these phases is particularly challenging because little is known from experiments about the momentum space electronic structure of ultrathin crystals. Here, we report direct electronic structure measurements of exfoliated mono-, bi-, and few-layer 1T'-WTe₂ by laser-based microfocus angle-resolved photoemission. This is achieved by encapsulating with monolayer graphene a flake of WTe₂ comprising regions of different thickness. Our data support the recent identification of a quantum spin Hall state in monolayer 1T'-WTe₂ and reveal strong signatures of the broken inversion symmetry in the bilayer. We finally discuss the sensitivity of encapsulated samples to contaminants following exposure to ambient atmosphere.

Atomistic real-space observation of the van der Waals layered structure and tailored morphology in VSe2

Two-dimensional (2D) transition metal dichalcogenides with van der Waals gaps have attracted much attention due to their peculiarly distinctive physical properties from their bulk counterparts. Among them, vanadium diselenide (VSe2) has been considered to be a promising candidate for future spintronic devices, as room temperature ferromagnetism was reported recently. However, detailed crystallography and properties of VSe2 nanosheets have been less explored. Here, we report the atomistic real-space observation of the van der Waals layered structure of VSe2 for the first time. Furthermore, simply by controlling the carrier gas flow rate, a morphological variation of the surface area and thickness of VSe2 nanosheets was observed. The room temperature ferromagnetic feature of single VSe2 nanosheets was also revealed by magnetic force microscopy measurements. Our findings will play a significant role in the research of intrinsic 2D ferromagnetic materials.

An ultrafast symmetry switch in a Weyl semimetal

Topological quantum materials exhibit fascinating properties^1-3, with important applications for dissipationless electronics and fault-tolerant quantum computers^4,5. Manipulating the topological invariants in these materials would allow the development of topological switching applications analogous to switching of transistors⁶. Lattice strain provides the most natural means of tuning these topological invariants because it directly modifies the electron-ion interactions and potentially alters the underlying crystalline symmetry on which the topological properties depend^7-9. However, conventional means of applying strain through heteroepitaxial lattice mismatch¹⁰ and dislocations¹¹ are not extendable to controllable time-varying protocols, which are required in transistors. Integration into a functional device requires the ability to go beyond the robust, topologically protected properties of materials and to manipulate the topology at high speeds. Here we use crystallographic measurements by relativistic electron diffraction to demonstrate that terahertz light pulses can be used to induce terahertz-frequency interlayer shear strain with large strain amplitude in the Weyl semimetal WTe₂, leading to a topologically distinct metastable phase. Separate nonlinear optical measurements indicate that this transition is associated with a symmetry change to a centrosymmetric, topologically trivial phase. We further show that such shear strain provides an ultrafast, energy-efficient way of inducing robust, well separated Weyl points or of annihilating all Weyl points of opposite chirality. This work demonstrates possibilities for ultrafast manipulation of the topological properties of solids and for the development of a topological switch operating at terahertz frequencies.

Gate tuning from exciton superfluid to quantum anomalous Hall in van der Waals heterobilayer

Van der Waals heterostructures of two-dimensional (2D) materials provide a powerful approach toward engineering various quantum phases of matter. Examples include topological matter such as quantum spin Hall (QSH) insulator and correlated matter such as exciton superfluid. It can be of great interest to realize these vastly different quantum phases matter on a common platform; however, their distinct origins tend to restrict them to material systems of incompatible characters. Here, we show that heterobilayers of 2D valley semiconductors can be tuned through interlayer bias between an exciton superfluid, a quantum anomalous Hall insulator, and a QSH insulator. The tunability between these distinct phases results from the competition of Coulomb interaction with the interlayer quantum tunneling that has a chiral form in valley semiconductors. Our findings point to exciting opportunities for harnessing both protected topological edge channels and bulk superfluidity in an electrically configurable platform.

Electronic transport properties of MoS2 nanoribbons embedded in butadiene solvent

Transition metal dichalcogenides (TMDCs) are promising materials for applications in nanoelectronics and correlated fields, where their metallic edge states play a fundamental role in the electronic transport.

The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping

The magnetism of hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers is systematically studied by using first principles density functional calculations. The pristine 1T-MX₂ monolayers are semiconductors with nonmagnetic ground states, which can be transformed to ferromagnetic states by the approach of hole doping. For the unstrained monolayers, the spontaneous magnetization appears once above the critical hole density (10¹⁴ cm⁻²), where the p orbital of S or Se atoms contributes the most of the magnetic moment. As the tensile strains exceed 4%, the magnetic moments per hole of ZrS₂ and HfS₂ monolayers increase sharply to a saturated value with increasing hole density, implying obvious advantages over the unstrained monolayers. The phonon dispersion calculations for the strained ZrS₂ and HfS₂ monolayers indicate that they can keep the dynamical stability by hole doping. Furthermore, we propose that the fluorine atom modified ZrS₂ monolayer could obtain stable ferromagnetism. The magnetism in hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers has great potential for developing spintronic devices with desirable applications.

The magnetism of zirconium and hafnium dichalcogenides by hole doping is studied by using first principles calculations.

Band Signatures for Strong Nonlinear Hall Effect in Bilayer WTe_{2}

Unconventional responses upon breaking discrete or crystal symmetries open avenues for exploring emergent physical systems and materials. By breaking inversion symmetry, a nonlinear Hall signal can be observed, even in the presence of time-reversal symmetry, quite different from the conventional Hall effects. Low-symmetry two-dimensional materials are promising candidates for the nonlinear Hall effect, but it is less known when a strong nonlinear Hall signal can be measured, in particular, its connections with the band-structure properties. By using model analysis, we find prominent nonlinear Hall signals near tilted band anticrossings and band inversions. These band signatures can be used to explain the strong nonlinear Hall effect in the recent experiments on two-dimensional WTe_{2}. This Letter will be instructive not only for analyzing the transport signatures of the nonlinear Hall effect but also for exploring unconventional responses in emergent materials.

Origin of Two-Dimensional Vertical Ferroelectricity in WTe2 Bilayer and Multilayer

In a recent report, room-temperature vertical ferroelectricity was experimentally shown in WTe₂ bilayer, while its mechanism of ferroelectric switching without vertical ion displacements remains unclarified. In this work, we reveal its origin by first-principles calculations that the polarization stems from uncompensated interlayer vertical charge transfer depending on in-plane translation, which can be switched upon interlayer sliding. The calculated results are consistent with experimental data, and a similar switching mechanism can be applied to a multilayer counterpart. Despite its small ferroelectric switching barrier and polarization, the in-plane rigidity of WTe₂ layer gives rise to a high Curie temperature. A moire pattern of ferroelectric domain superlattice can be formed and tuned upon a small-angle twist of bilayer, which is unique compared with traditional ferroelectrics. Similar interlayer translational ferroelectricity may exist in a series of van der Waals bilayers or even bulk phases.

Spin dependence of crossed Andreev reflection and electron tunneling induced by Majorana fermions

We investigate spin dependence of the nonlocal transport induced by Majorana fermions in a one-dimensional ferromagnet-ferromagnetic-insulator-superconductor-ferromagnetic-insulator-ferromagnet junction on the edge of a two-dimensional topological insulator. The results show that coupled Majorana fermions lead to the nonlocal transport processes including electron tunneling and crossed Andreev reflection, which can be tuned by adjusting the spin polarizations of the Majorana fermions. By manipulating the bands in the two ferromagnets, the nonlocal transport can be selected as either pure electron tunneling or pure crossed Andreev reflection, the transmission probability of which could be 100%. Furthermore, the pure electron tunneling and the pure crossed Andreev reflection are well controlled by the spin directions of the electron states in the two ferromagnets.

Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition

The understanding of the interlayer interactions in vertical heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is essential to exploit their advanced functions for next-generation optoelectronics and electronics. Here we demonstrate a monolithic stacking of TMDC heterostructures with 2D MoS2 and WS2 layers via in situ physical vapor deposition. We find that the kinetically sputtered atoms are able to overcome the interlayer van der Waals forces between the vertical layers, leading to a substantial number of randomly oriented stacks with various twist angles. Our X-ray photoelectron spectroscopy results reveal a type II heterojunction for 2D WS2/MoS2, showing a band alignment with a conduction band offset of 0.41 eV and a valence band offset of 0.25 eV. In particular, we observed a remarkable interlayer coupling and associated exciton relaxation at the hetero-interface due to the misoriented stacks. By analyzing the band structures and charge densities of the vertical stacks using first-principles calculations, we reveal that the interlayer coupling is a function of the interlayer distance and is relatively insensitive to the angle of misorientation.

Opto-Mechanics Driven Fast Martensitic Transition in Two-Dimensional Materials

Diffusional phase-change materials, such as Ge-Sb-Te alloys, are used in rewritable nonvolatile memory devices. But the continuous pursuit of readout/write speed and reduced energy consumption in miniaturized devices calls for an optically driven, diffusionless phase change scheme in ultrathin materials. Inspired by optical tweezers, in this work, we illustrate theoretically and computationally that a linearly polarized laser pulse with selected frequency can drive an ultrafast diffusionless martensitic phase transition of two-dimensional ferroelastic materials such as SnO and SnSe monolayers, where the unit-cell strain is tweezed as a generalized coordinate that affects the anisotropic dielectric function and electromagnetic energy density. At laser power of 2.0 × 10¹⁰ and 7.7 × 10⁹ W/cm², the transition potential energy barrier vanishes between two 90°-orientation variants of ferroelastic SnO and SnSe monolayer, respectively, so displacive domain switching can occur within picoseconds. The estimated adiabatic thermal limit of energy input in such optomechanical martensitic transition (OMT) is at least 2 orders of magnitude lower than that in Ge-Sb-Te alloy.

Electric-field-tuned topological phase transition in ultrathin Na3Bi

The electric-field-induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor^1-4. In this scheme, 'on' is the ballistic flow of charge and spin along dissipationless edges of a two-dimensional quantum spin Hall insulator^5-9, and 'off' is produced by applying an electric field that converts the exotic insulator to a conventional insulator with no conductive channels. Such a topological transistor is promising for low-energy logic circuits⁴, which would necessitate electric-field-switched materials with conventional and topological bandgaps much greater than the thermal energy at room temperature, substantially greater than proposed so far^6-8. Topological Dirac semimetals are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases^3,10-16. Here we use scanning tunnelling microscopy and spectroscopy and angle-resolved photoelectron spectroscopy to show that mono- and bilayer films of the topological Dirac semimetal^3,17 Na₃Bi are two-dimensional topological insulators with bulk bandgaps greater than 300 millielectronvolts owing to quantum confinement in the absence of electric field. On application of electric field by doping with potassium or by close approach of the scanning tunnelling microscope tip, the Stark effect completely closes the bandgap and re-opens it as a conventional gap of 90 millielectronvolts. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy at room temperature (25 millielectronvolts), suggest that ultrathin Na₃Bi is suitable for room-temperature topological transistor operation.

Epitaxial growth of ultraflat stanene with topological band inversion

Two-dimensional (2D) topological materials, including quantum spin/anomalous Hall insulators, have attracted intense research efforts owing to their promise for applications ranging from low-power electronics and high-performance thermoelectrics to fault-tolerant quantum computation. One key challenge is to fabricate topological materials with a large energy gap for room-temperature use. Stanene-the tin counterpart of graphene-is a promising material candidate distinguished by its tunable topological states and sizeable bandgap. Recent experiments have successfully fabricated stanene, but none of them have yet observed topological states. Here we demonstrate the growth of high-quality stanene on Cu(111) by low-temperature molecular beam epitaxy. Importantly, we discovered an unusually ultraflat stanene showing an in-plane s-p band inversion together with a spin-orbit-coupling-induced topological gap (~0.3 eV) at the Γ point, which represents a foremost group-IV ultraflat graphene-like material displaying topological features in experiment. The finding of ultraflat stanene opens opportunities for exploring two-dimensional topological physics and device applications.

Magnetism in semiconducting molybdenum dichalcogenides

Transition metal dichalcogenides (TMDs) are interesting for understanding the fundamental physics of two-dimensional (2D) materials as well as for applications to many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below T _M = 40 and 100 K in bulk semiconducting TMDs 2H-MoTe₂ and 2H-MoSe₂, respectively, by means of muon spin rotation (μSR), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. The μSR measurements show the presence of large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites, which are randomly distributed in the lattice at the subpercent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9 to 2.8 μ_B. Further, we find that the magnetic order stabilized in 2H-MoTe₂ and 2H-MoSe₂ is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe₂ and 2H-MoSe₂ as a new class of magnetic semiconductors and open a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.

Orientation-dependent optical characterization of atomically thin transition metal ditellurides

Molybdenum ditellurides (MoTe2) have recently attracted attention owing to their excellent structurally tunable nature between 1T'(metallic)- and 2H(semiconducting)-phases; thus, the controllable fabrication and critical identification of MoTe2 are highly desired. Here, we semi-controllably synthesized 1T'- and 2H-MoTe2 crystals using the atmospheric pressure chemical vapor deposition (APCVD) technique and studied their grain-orientation dependency using polarization-sensitive optical microscopy, Raman scattering, and second-harmonic generation (SHG) microspectroscopy. The polycrystalline 1T'-MoTe2 phase with quasi-1D "Mo-Mo" zigzag chains showed anisotropic optical absorption, leading to a clear visualization of the lattice domains. On the other hand, 2H-MoTe2 lattice grains did not exhibit any discernible difference under polarized light illumination. The combined aforementioned microscopy techniques could be used as an easy-to-access and non-destructive tool for a quick and solid identification of intended lattice orientation development in industry-scale MoTe2 crystal manufacturing.

Energy-Resolved Photoconductivity Mapping in a Monolayer-Bilayer WSe2 Lateral Heterostructure

Vertical and lateral heterostructures of van der Waals materials provide tremendous flexibility for band-structure engineering. Because electronic bands are sensitively affected by defects, strain, and interlayer coupling, the edge and heterojunction of these two-dimensional (2D) systems may exhibit novel physical properties, which can be fully revealed only by spatially resolved probes. Here, we report the spatial mapping of photoconductivity in a monolayer-bilayer WSe₂ lateral heterostructure under multiple excitation lasers. As the photon energy increases, the light-induced conductivity detected by microwave impedance microscopy first appears along the heterointerface and bilayer edge, then along the monolayer edge, inside the bilayer area, and finally in the interior of the monolayer region. The sequential emergence of mobile carriers in different sections of the sample is consistent with the theoretical calculation of local energy gaps. Quantitative analysis of the microscopy and transport data also reveals the linear dependence of photoconductivity on the laser intensity and the influence of interlayer coupling on carrier recombination. Combining theoretical modeling, atomic-scale imaging, mesoscale impedance microscopy, and device-level characterization, our work suggests an exciting perspective for controlling the intrinsic band gap variation in 2D heterostructures down to a regime of a few nanometers.

High-Temperature Majorana Corner States

Majorana bound states often occur at the end of a 1D topological superconductor. Validated by a new bulk invariant and an intuitive edge argument, we show the emergence of one Majorana Kramers pair at each corner of a square-shaped 2D topological insulator proximitized by an s_{±}-wave (e.g., Fe-based) superconductor. We obtain a phase diagram that addresses the relaxation of crystal symmetry and edge orientation. We propose two experimental realizations in candidate materials. Our scheme offers a higher-order and higher-temperature route for exploring non-Abelian quasiparticles.

Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy

The presence of rich polymorphs and stacking polytypes in molybdenum disulfide (MoS₂ ) endows it with a diverse range of electrical, catalytic, optical, and magnetic properties. This has stimulated a lot of interest in the unique properties associated with each polymorph. Most techniques used for polymorph identification in MoS₂ are macroscopic techniques that sample averaged properties due to their limited spatial resolution. A reliable way of differentiating the atomic structure of different polymorphs is needed in order to understand their growth dynamics and establish the correlation between structure and properties. Herein, the use of electron microscopy for identifying the atomic structures of several important polymorphs in MoS₂ , some of which are the subjects of mistaken assignment in the literature, is discussed. In particular, scanning transmission electron microscopy-annular dark field imaging has emerged as the most effective and reliable approach for identifying the different phases in MoS₂ and other 2D materials because its images can be directly correlated to the atomic structures. Examples of the identification of polymorphs grown under different conditions in molecular beam epitaxy or chemical vapor deposition, for example, 3R, 1T, 1T'-phases, and 1T'-edges, are presented, including their atomic structures, fascinating properties, growth methods, and corresponding thermodynamic stabilities.

Anomalous oxidation and its effect on electrical transport originating from surface chemical instability in large-area, few-layer 1T'-MoTe2 films

Two-dimensional (Mo,W)Te2 films have recently attracted significant research interest as electronic device channel materials, topological insulators and Weyl semimetals. However, one critical concern that can hamper their diverse applications is surface chemical instability due to weak Mo(W)-Te bond energy reflected in the small electronegativity difference between Mo(W) and Te, which fundamentally induces unpredictable surface oxidation and remarkably affects the film electrical transport. Here, for the first time, we clarify an anomalous oxidation featuring an unbalanced oxidation process in large-area, few-layer 1T'-MoTe2, which originates from the surface chemical instability. We identify the oxidation temperature, oxygen flow rate, structural polymorphism, and atomic chemical bond electronegativity that dominate preferential surface oxidation, which can be monitored by the appearance and decomposition of Raman-active Te metalloids. Importantly, we verify the formation of an ultrathin natural amorphous MoO3-TeO2 surface layer with an approximate self-limiting thickness that significantly affects the transport properties of the underlying few-layer 1T'-MoTe2 film. We also reveal a similar oxidation tendency in few-layer 2H-MoTe2 and 1T'-WTe2 but with a higher resistance to oxidation than 1T'-MoTe2 due to their inherent phase stability. Our findings not only represent a strong advancement in understanding surface chemical instability of atomically thin 2D TMDC materials, but also highlight technically essential importance of constructing ultrathin natural oxide dielectrics/TMDC interfaces with a controllable surface oxidation process for atomically thin TMDC-based devices.

Evidence for a quantum spin Hall phase in graphene decorated with Bi2Te3 nanoparticles

Realization of the quantum spin Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling-stemming from carbon's low mass-poses the primary obstacle. We experimentally and theoretically study artificially enhanced spin-orbit coupling in graphene via random decoration with dilute Bi₂Te₃ nanoparticles. Multiterminal resistance measurements suggest the presence of helical edge states characteristic of a quantum spin Hall phase; the magnetic field and temperature dependence of the resistance peaks, x-ray photoelectron spectra, scanning tunneling spectroscopy, and first-principles calculations further support this scenario. These observations highlight a pathway to spintronics and quantum information applications in graphene-based quantum spin Hall platforms.

Electron quantum metamaterials in van der Waals heterostructures

In recent decades, scientists have developed the means to engineer synthetic periodic arrays with feature sizes below the wavelength of light. When such features are appropriately structured, electromagnetic radiation can be manipulated in unusual ways, resulting in optical metamaterials whose function is directly controlled through nanoscale structure. Nature, too, has adopted such techniques-for example in the unique colouring of butterfly wings-to manipulate photons as they propagate through nanoscale periodic assemblies. In this Perspective, we highlight the intriguing potential of designer structuring of electronic matter at scales at and below the electron wavelength, which affords a new range of synthetic quantum metamaterials with unconventional responses. Driven by experimental developments in stacking atomically layered heterostructures-such as mechanical pick-up/transfer assembly-atomic-scale registrations and structures can be readily tuned over distances smaller than characteristic electronic length scales (such as the electron wavelength, screening length and electron mean free path). Yet electronic metamaterials promise far richer categories of behaviour than those found in conventional optical metamaterial technologies. This is because, unlike photons, which scarcely interact with each other, electrons in subwavelength-structured metamaterials are charged and strongly interact. As a result, an enormous variety of emergent phenomena can be expected and radically new classes of interacting quantum metamaterials designed.

Charge carrier injection and transport engineering in two-dimensional transition metal dichalcogenides

Ever since two dimensional-transition (2D) metal dichalcogenides (TMDs) were discovered, their fascinating electronic properties have attracted a great deal of attention for harnessing them as critical components in novel electronic devices. 2D-TMDs endowed with an atomically thin structure, dangling bond-free nature, electrostatic integrity, and tunable wide band gaps enable low power consumption, low leakage, ambipolar transport, high mobility, superconductivity, robustness against short channel effects and tunneling in highly scaled devices. However, the progress of 2D-TMDs has been hampered by severe charge transport issues arising from undesired phenomena occurring at the surfaces and interfaces. Therefore, this review provides three distinct engineering strategies embodied with distinct innovative approaches to optimize both carrier injection and transport. First, contact engineering involves 2D-metal contacts and tunneling interlayers to overcome metal-induced interface states and the Fermi level pinning effect caused by low vacancy energy formation. Second, dielectric engineering covers high-k dielectrics, ionic liquids or 2D-insulators to screen scattering centers caused by carrier traps, imperfections and rough substrates, to finely tune the Fermi level across the band gap, and to provide dangling bond-free media. Third, material engineering focuses on charge transfer via substitutional, chemical and plasma doping to precisely modulate the carrier concentration and to passivate defects while preserving material integrity. Finally, we provide an outlook of the conceptual and technical achievements in 2D-TMDs to give a prospective view of the future development of highly scaled nanoelectronic devices.

Gate-induced superconductivity in a monolayer topological insulator

The layered semimetal tungsten ditelluride (WTe₂) has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We found that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping at temperatures below 1 kelvin. The 2D TI-superconductor transition can be driven by applying a small gate voltage. This discovery offers possibilities for gate-controlled devices combining superconductivity and nontrivial topological properties, and could provide a basis for quantum information schemes based on topological protection.

Superconductivity in Potassium-Intercalated T d-WTe2

To realize a topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe₂ and discover the superconducting state in K _xWTe₂ through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, we also uncover the coexistence of superconductivity and the positive magnetoresistance state. Structural analysis substantiates the negligible lattice expansion induced by the intercalation, therefore suggesting K-intercalated WTe₂ still hosts the topological nontrivial state. These results indicate that the K-intercalated WTe₂ may be a promising candidate to explore the topological superconductor.

Observation of Coulomb gap in the quantum spin Hall candidate single-layer 1T'-WTe2

The two-dimensional topological insulators host a full gap in the bulk band, induced by spin–orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, it is usually challenging to suppress the bulk conductance and thus to realize the quantum spin Hall (QSH) effect. In this study, we find a mechanism to effectively suppress the bulk conductance. By using the quasiparticle interference technique with scanning tunneling spectroscopy, we demonstrate that the QSH candidate single-layer 1T’-WTe₂ has a semimetal bulk band structure with no full SOC-induced gap. Surprisingly, in this two-dimensional system, we find the electron–electron interactions open a Coulomb gap which is always pinned at the Fermi energy (E_F). The opening of the Coulomb gap can efficiently diminish the bulk state at the E_F and supports the observation of the quantized conduction of topological edge states.

The conductance from bulk bands in a topological insulator usually blurs effects arising from edge states. Here, Song et al. report a Coulomb gap opened by electron–electron interactions, which effectively suppress the bulk conductance and promote observation of topological edge states in the single-layer 1T’-WTe₂.

Ultrafast Energy Dissipation via Coupling with Internal and External Phonons in Two-Dimensional MoS2

Atomically thin two-dimensional materials have emerged as a promising system for optoelectronic applications; however, the low quantum yield, mainly caused by nonradiative energy dissipation, has greatly limited practical applications. To reveal the details for nonradiative energy channels, femtosecond pump-probe spectroscopy with a detection wavelength ranging from visible to near-infrared to mid-infrared is performed on few-layer MoS₂. With this method, the many-body effects, occupation effects, and phonon dynamics are clearly identified. In particular, thermalization of the MoS₂ lattice via electron-phonon scattering is responsible for a redshift of the exciton resonance energy observed within tens to hundreds of picoseconds after photoexcitation, which provides a direct real-time sensor for measuring the change in lattice temperature. We find that the excess energy from the cooling of hot carriers and the formation of bound carriers is efficiently transferred to the internal phonon system within 2 ps, while that from Shockley-Read-Hall recombination (∼9 ps) is mainly dissipated from the MoS₂ surfaces to external phonons.

Origin of extremely large magnetoresistance in the candidate type-II Weyl semimetal MoTe2-x

The recent observation of extremely large magnetoresistance (MR) in the transition-metal dichalcogenide MoTe2 has attracted considerable interest due to its potential technological applications as well as its relationship with novel electronic states predicted for a candidate type-II Weyl semimetal. In order to understand the origin of the MR, the electronic structure of MoTe2-x (x = 0.08) is systematically tuned by application of pressure and probed via its Hall and longitudinal conductivities. With increasing pressure, a monoclinic-to-orthorhombic (1 T' to Td) structural phase transition temperature (T*) gradually decreases from 210 K at 1 bar to 58 K at 1.1 GPa, and there is no anomaly associated with the phase transition at 1.4 GPa, indicating that a T = 0 K quantum phase transition occurs at a critical pressure (Pc) between 1.1 and 1.4 GPa. The large MR observed at 1 bar is suppressed with increasing pressure and is almost saturated at 100% for P > Pc. The dependence on magnetic field of the Hall and longitudinal conductivities of MoTe2-x shows that a pair of electron and hole bands are important in the low-pressure Td phase, while another pair of electron and hole bands are additionally required in the high-pressure 1 T' phase. The MR peaks at a characteristic hole-to-electron concentration ratio (nc) and is sharply suppressed when the ratio deviates from nc within the Td phase. These results establish the comprehensive temperature-pressure phase diagram of MoTe2-x and underscore that its MR originates from balanced electron-hole carrier concentrations.

Metallic MoS2 for High Performance Energy Storage and Energy Conversion

Metallic phase 2D molybdenum disulfide (MoS₂ ) is an emerging class of materials with remarkably higher electrical conductivity and catalytic activities. The goal of this study is to review the atomic structures and electrochemistry of metallic MoS₂ , which is essential for a wide range of existing and new enabling technologies. The scope of this paper ranges from the atomic structure, band structure, electrical and optical properties to fabrication methods, and major emerging applications in electrochemical energy storage and energy conversion. This paper also thoroughly covers the atomic structure-properties-application relationships of metallic MoS₂ . Understanding the fundamental properties of these structures is crucial for designing and manufacturing products for emerging applications. Today, a more holistic understanding of the interplay between the structure, chemistry, and performance of metallic MoS₂ is advancing actual applications of this material. This new level of understanding also enables a myriad of new and exciting applications, which motivated this review. There are excellent reviews already on the traditional semiconducting MoS₂ , and this review, for the first time, focuses on the uniqueness of conducting metallic MoS₂ for energy applications and offers brand new materials for clean energy application.

Majorana Corner Modes in a High-Temperature Platform

We introduce two-dimensional topological insulators in proximity to high-temperature cuprate or iron-based superconductors as high-temperature platforms of Majorana Kramers pairs of zero modes. The proximity-induced pairing at the helical edge state of the topological insulator serves as a Dirac mass, whose sign changes at the sample corner because of the pairing symmetry of high-T_{c} superconductors. This sign changing naturally creates at each corner a pair of Majorana zero modes protected by time-reversal symmetry. Conceptually, this is a topologically trivial superconductor-based approach for Majorana zero modes. We provide quantitative criteria and suggest candidate materials for this proposal.

Quantitative mappings between symmetry and topology in solids

The study of spatial symmetries was accomplished during the last century and had greatly improved our understanding of the properties of solids. Nowadays, the symmetry data of any crystal can be readily extracted from standard first-principles calculation. On the other hand, the topological data (topological invariants), the defining quantities of nontrivial topological states, are in general considerably difficult to obtain, and this difficulty has critically slowed down the search for topological materials. Here we provide explicit and exhaustive mappings from symmetry data to topological data for arbitrary gapped band structure in the presence of time-reversal symmetry and any one of the 230 space groups. The mappings are completed using the theoretical tools of layer construction and symmetry-based indicators. With these results, finding topological invariants in any given gapped band structure reduces to a simple search in the mapping tables provided.

Electron-donor doping enhanced Li storage in electride Ca2N monolayer: a first-principles study

It was reported by Hu et al (2015 ACS Appl. Mater. Interfaces 7 24016) that Li adsorption on the Ca₂N monolayer is energetically unfavorable, although it was found to be a good candidate for Na storage. In this paper, from first-principles calculations, it is shown that compressive stain can greatly enhance the interactions between Li adsorbate and the Ca₂N host, which is beneficial to prevent Li from clustering on the surface and thus Li storage becomes possible. Charge distribution analysis further shows that the enhanced Li-adsorption is a result of the increased surface charge density and the more confined charge distribution under compressive strain. Inspired by this observation, several electron-donor-doped Ca₂N materials are considered as anode materials for Li-ion batteries. Results show that the O and F doped Ca₂N have the best performance, with predicted Li storage capacity reaching about 567.9 and 565.9 mAh g^-1 for O and F doped cases, respectively. It is also demonstrated that electron-donor doping does not change the metallic electronic structures and the low Li-ion migration energy barriers on the surface of the Ca₂N monolayer, and thus the rate performance of the doped Ca₂N can be as good as the undoped case. Our study offers a deep understanding of the Li interactions with 2D materials and provides an approach of material modification to 2D electrides for battery applications.

Observation of topologically protected states at crystalline phase boundaries in single-layer WSe2

Transition metal dichalcogenide materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe edge states at the crystallographically aligned interface between a quantum spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers. The QSHI nature of single-layer 1T'-WSe2 is verified using angle-resolved photoemission spectroscopy to determine band inversion around a 120 meV energy gap, as well as scanning tunneling spectroscopy to directly image edge-state formation. Using this edge-state geometry we confirm the predicted penetration depth of one-dimensional interface states into the two-dimensional bulk of a QSHI for a well-specified crystallographic direction. These interfaces create opportunities for testing predictions of the microscopic behavior of topologically protected boundary states.

Dislocation driven spiral and non-spiral growth in layered chalcogenides

Two-dimensional materials have shown great promise for implementation in next-generation devices. However, controlling the film thickness during epitaxial growth remains elusive and must be fully understood before wide scale industrial application. Currently, uncontrolled multilayer growth is frequently observed, and not only does this growth mode contradict theoretical expectations, but it also breaks the inversion symmetry of the bulk crystal. In this work, a multiscale theoretical investigation aided by experimental evidence is carried out to identify the mechanism of such an unconventional, yet widely observed multilayer growth in the epitaxy of layered materials. This work reveals the subtle mechanistic similarities between multilayer concentric growth and spiral growth. Using the combination of experimental demonstration and simulations, this work presents an extended analysis of the driving forces behind this non-ideal growth mode, and the conditions that promote the formation of these defects. Our study shows that multilayer growth can be a result of both chalcogen deficiency and chalcogen excess: the former causes metal clustering as nucleation defects, and the latter generates in-domain step edges facilitating multilayer growth. Based on this fundamental understanding, our findings provide guidelines for the narrow window of growth conditions which enables large-area, layer-by-layer growth.

Observation of Gap Opening in 1T' Phase MoS2 Nanocrystals

Two-dimensional (2D) transition metal dichalcogenides (TMDs) manifest in various polymorphs, which deliver different electronic properties; the most prominent among them include the semiconducting 2H phase and metallic 1T (or distorted 1T' phase) phase. Alkali metal intercalation or interface strain has been used to induce semiconductor-to-metal transition in a monolayer MoS₂ sheet, leading to exotic quantum states or improved performance in catalysis. However, the direct growth of 1T or 1T' phase MoS₂ is challenging due to its metastability. Here, we report MBE growth of isolated 1T' and 2H MoS₂ nanocrystals on a Au substrate; these nanocrystals can be differentiated unambiguously by their electronic states using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). By studying the initial stages of nucleation during molecular beam epitaxy (MBE) of MoS₂, we could identify atomic clusters (30-50 atoms) with intralayer stacking corresponding to 1T' and 2H separately, which suggests a deterministic growth mechanism from initial nuclei. Furthermore, a topological insulator type behavior was observed for the 1T' MoS₂ crystals, where an energy gap opening of 80 meV was measured by STS in the basal plane at 5 K, with the edge of the nanocrystals remaining metallic.

Discovery of asymmetric NaXBi (X= Sn /Pb) monolayers with non-trivial topological properties

Two-dimensional (2D) Bi-based films have attracted intensive attention recently. However, materials with spatial asymmetry are rarely reported, impeding their practical application. In the present work, based on density functional theory (DFT) calculations, we propose a new type of 2D asymmetric NaXBi (X = Sn and Pb) monolayer, which can realize the coexistence of a topological phase and the Rashba effect. The dynamical and thermal stability are confirmed by the phonon spectra and ab initio DFT molecular dynamic simulations. Analysis of the band structures reveals that NaPbBi is an intrinsic 2D topological insulator with a gap as large as 0.35 eV, far beyond room temperature. The non-trivial topology, caused by p xy - p z band inversion, is confirmed by the Z 2 topological index and helical edge states. Remarkably, unlike Bi(111) or BiX (X = H, F, Cl) monolayers, the inversion-symmetry breaking in NaPbBi gives rise to a sizable Rashba splitting energy of 64 meV, which is tunable under external strains (-1 to 7%). Also, an effective tight-binding (TB) model is constructed to understand the origin of the non-trivial topology of NaPbBi. Our work opens a new avenue to designing a feasible 2D asymmetric material platform for application in spintronics.

Flexible modulation of electronic and magnetic properties of zigzag H-MoS2 nanoribbons by crack defects

The effects of crack defects on electronic and magnetic properties of zigzag MoS₂ nanoribbons are investigated systematically by first-principles calculations based on spin-polarized density functional theory. We find that not only the electronic and spin transport ability of zigzag MoS₂ nanoribbons can be enhanced significantly by the armchair crack defects, but also their magnetism could be modulated flexibly by crack defects. Our study suggests that the introduction of crack defect is a feasible way to modulate the electronic and magnetic properties of zigzag MoS₂ nanoribbons. We further propose that the crack defects may also provide a useful tool for improving the performance of devices.

Proximity exchange induced gap opening and topological feature in graphene/1T'-MX2 (M = Mo,W; X = S,Se,Te) Dirac heterostructures

By using first-principles calculations, we demonstrate the influence of proximity effect on the band structures of heterostructures formed by graphene stacking on a two dimensional (2D) topological insulator (TI) 1T'-MX₂. The interlayer distance d between graphene and TI decreases with the enhancement of the intrinsic lattice anisotropy of 1T'-MX₂, which determines different strength of the interlayer proximity interaction. The bandgap can be opened by the proximity exchange. The weak anisotropic symmetry of heterostructure (large d) only results in a small band gap (∼50 meV) in graphene/MoTe₂. However, a large energy gap (up to  ∼200 meV) can be obtained in graphene/MoS₂, which is attributed to the inter-intralayer charge transfer due to the strong proximity interaction of the hetero-interface (small d). In addition, the 1T'-MX₂ of heterostructure still possesses the topological feature of Z ₂  =  1, since the graphene has a negligible effect on the band structure of the system.

Alkali-metal-adsorbed g-GaN monolayer: ultralow work functions and optical properties

The electronic and optical properties of alkali-metal-adsorbed graphene-like gallium nitride (g-GaN) have been investigated using density functional theory. The results denote that alkali-metal-adsorbed g-GaN systems are stable compounds, with the most stable adsorption site being the center of the hexagonal ring. In addition, because of charge transfer from the alkali-metal atom to the host, the g-GaN layer shows clear n-type doping behavior. The adsorption of alkali metal atoms on g-GaN occurs via chemisorption. More importantly, the work function of g-GaN is substantially reduced following the adsorption of alkali-metal atoms. Specifically, the Cs-adsorbed g-GaN system shows an ultralow work function of 0.84 eV, which has great potential application in field-emission devices. In addition, the alkali-metal adsorption can lead to an increase in the static dielectric constant and extend the absorption spectrum of g-GaN.

A Review of the Characteristics, Synthesis, and Thermodynamics of Type-II Weyl Semimetal WTe₂

WTe₂ as a candidate of transition metal dichalcogenides (TMDs) exhibits many excellent properties, such as non-saturable large magnetoresistance (MR). Firstly, the crystal structure and characteristics of WTe₂ are introduced, followed by a summary of the synthesis methods. Its thermodynamic properties are highlighted due to the insufficient research. Finally, a comprehensive analysis and discussion are introduced to interpret the advantages, challenges, and future prospects. Some results are shown as follows. (1) The chiral anomaly, pressure-induced conductivity, and non-saturable large MR are all unique properties of WTe₂ that attract wide attention, but it is also a promising thermoelectric material that holds anisotropic ultra-low thermal conductivity (0.46 W·m−1·K−1). WTe₂ is expected to have the lowest thermal conductivity, owing to the heavy atom mass and low Debye temperature. (2) The synthesis methods influence the properties significantly. Although large-scale few-layer WTe₂ in high quality can be obtained by many methods, the preparation has not yet been industrialized, which limits its applications. (3) The thermodynamic properties of WTe₂ are influenced by temperature, scale, and lattice orientations. However, the in-plane anisotropy cannot be observed in the experiment, as the intrinsic property is suppressed by defects and boundary scattering. Overall, this work provides an opportunity to develop the applications of WTe₂.

1T' Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels

Plasmon-free surface enhanced Raman scattering (SERS) based on the chemical mechanism (CM) is drawing great attention due to its capability for controllable molecular detection. However, in comparison to the conventional noble-metal-based SERS technique driven by plasmonic electromagnetic mechanism (EM), the low sensitivity in the CM-based SERS is the dominant barrier toward its practical applications. Herein, we demonstrate the 1T' transition metal telluride atomic layers (WTe₂ and MoTe₂) as ultrasensitive platforms for CM-based SERS. The SERS sensitivities of analyte dyes on 1T'-W(Mo)Te₂ reach EM-comparable ones and become even greater when it is integrated with a Bragg reflector. In addition, the dye fluorescence signals are efficiently quenched, making the SERS spectra more distinguishable. As a proof of concept, the SERS signals of analyte Rhodamine 6G (R6G) are detectable even with an ultralow concentration of 40 (400) fM on pristine 1T'-W(Mo)Te₂, and the corresponding Raman enhancement factor (EF) reaches 1.8 × 10⁹ (1.6 × 10⁸). The limit concentration of detection and the EF of R6G can be further enhanced into 4 (40) fM and 4.4 × 10¹⁰ (6.2 × 10⁹), respectively, when 1T'-W(Mo)Te₂ is integrated on the Bragg reflector. The strong interaction between the analyte and 1T'-W(Mo)Te₂ and the abundant density of states near the Fermi level of the semimetal 1T'-W(Mo)Te₂ in combination gives rise to the promising SERS effects by promoting the charge transfer resonance in the analyte-telluride complex.

Single-Crystalline Nanobelts Composed of Transition Metal Ditellurides

Following the celebrated discovery of graphene, considerable attention has been directed toward the rich spectrum of properties offered by van der Waals crystals. However, studies have been largely limited to their 2D properties due to lack of 1D structures. Here, the growth of high-yield, single-crystalline 1D nanobelts composed of transition metal ditellurides at low temperatures (T ≤ 500 °C) and in short reaction times (t ≤ 10 min) via the use of tellurium-rich eutectic metal alloys is reported. The synthesized semimetallic 1D products are highly pure, stoichiometric, structurally uniform, and free of defects, resulting in high electrical performances. Furthermore, complete compositional tuning of the ternary ditelluride nanobelts is achieved with suppressed phase separation, applicable to the creation of unprecedented low-dimensional materials/devices. This approach may inspire new growth/fabrication strategies of 1D layered nanostructures, which may offer unique properties that are not available in other materials.

Superconducting selenides intercalated with organic molecules: synthesis, crystal structure, electric and magnetic properties, superconducting properties, and phase separation in iron based-chalcogenides and hybrid organic-inorganic superconductors

Layered iron-based superconducting chalcogenides intercalated with molecular species are the subject of intensive studies, especially in the field of solid state chemistry and condensed matter physics, because of their intriguing chemistry and tunable electric and magnetic properties. Considerable progress in the research, revealing superconducting inorganic-organic hybrid materials with transition temperatures to superconducting state, T _c, up to 46 K, has been brought in recent years. These novel materials are synthesized by low-temperature intercalation of molecular species, such as solvates of alkali metals and nitrogen-containing donor compounds, into layered FeSe-type structure. Both the chemical nature as well as orientation of organic molecules between the layers of inorganic host, play an important role in structural modifications and may be used for fine tuning of superconducting properties. Furthermore, a variety of donor species compatible with alkali metals, as well as the possibility of doping also in the host structure (either on Fe or Se sites), makes this system quite flexible and gives a vast array of new materials with tunable electric and magnetic properties. In this review, the main aspects of intercalation chemistry are discussed with a particular attention paid to the influence of the unique nature of intercalating species on the crystal structure and physical properties of the hybrid inorganic-organic materials. To get a full picture of these materials, a comprehensive description of the most effective chemical and electrochemical methods, utilized for synthesis of intercalated species, with critical evaluation of their strong and weak points, related to feasibility of synthesis, phase purity, crystal size and morphology of final products, is included as well.

Construction of multifunctional MoSe2 hybrid towards the simultaneous improvements in fire safety and mechanical property of polymer

Organic modification of MoSe₂ sheets is firstly achieved by Atherton-Todd reaction, aiming at the acquisition of multifunctional MoSe₂ hybrid. Simultaneous enhancements in fire safety and mechanical property of thermalplastic polyurethane (TPU) are obtained with the presence of this hybrid. Strong interfacial interactions between the functionalized MoSe₂ sheets and TPU can be obtained, making more efficient load transfer from the weak polymer chains to the robust sheets. Besides, more coherent barrier network may be formed in polymer matrix, restraining the diffusion of decomposed fragments and reducing the supply for combustion fuel. Consequently, the decreases in heat release are observed for polymer composites. Notably, the releases of toxic gases, such as HCN and CO, are also suppressed by this barrier network, resulting in the reductions in fire toxicity. This work may open a new door for the functionalization of MoSe₂ sheets and evoke significant developments in its promising applications.