Two-dimensional gas of massless Dirac fermions in graphene

Energy band-gap engineering of graphene nanoribbons

We investigate electronic transport in lithographically patterned graphene ribbon structures where the lateral confinement of charge carriers creates an energy gap near the charge neutrality point. Individual graphene layers are contacted with metal electrodes and patterned into ribbons of varying widths and different crystallographic orientations. The temperature dependent conductance measurements show larger energy gaps opening for narrower ribbons. The sizes of these energy gaps are investigated by measuring the conductance in the nonlinear response regime at low temperatures. We find that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.

Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy

The unusual transport properties of graphene are the direct consequence of a peculiar band structure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and find the transition from two-dimensional to bulk character for 1 to 4 layers of graphene by angle-resolved photoemission. By detailed measurements of the pi bands we derive the stacking order, layer-dependent electron potential, screening length, and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.

Infrared spectroscopy of Landau levels of graphene

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs, are resolved. Their transition energies are proportional to sqrt[B], and the deduced band velocity is (-)c approximately equal to 1.1 x 10(6) m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.

Dissipative quantum hall effect in graphene near the Dirac point

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state.

Electronic and transport properties of boron-doped graphene nanoribbons

We report a spin polarized density functional theory study of the electronic and transport properties of graphene nanoribbons doped with boron atoms. We considered hydrogen terminated graphene (nano)ribbons with width up to 3.2 nm. The substitutional boron atoms at the nanoribbon edges (sites of lower energy) suppress the metallic bands near the Fermi level, giving rise to a semiconducting system. These substitutional boron atoms act as scattering centers for the electronic transport along the nanoribbons. We find that the electronic scattering process is spin-anisotropic; namely, the spin-down (up) transmittance channels are weakly (strongly) reduced by the presence of boron atoms. Such anisotropic character can be controlled by the width of the nanoribbon; thus, the spin-up and spin-down transmittance can be tuned along the boron-doped nanoribbons.

Fock-Darwin states of dirac electrons in graphene-based artificial atoms

We investigate the Fock-Darwin states of the massless chiral fermions confined in a graphitic parabolic quantum dot. In light of Klein tunneling, we analyze the condition for confinement of the Dirac fermions in a cylindrically symmetric potential. New features of the energy levels of the Dirac electrons as compared to the conventional electronic systems are discussed. We also evaluate the dipole-allowed transitions in the energy levels of the dots. We propose that in the high magnetic field limit, the band parameters can be accurately determined from the dipole-allowed transitions.

Carrier transport in two-dimensional graphene layers

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).

Electron fractionalization in two-dimensional graphenelike structures

Electron fractionalization is intimately related to topology. In one-dimensional systems, fractionally charged states exist at domain walls between degenerate vacua. In two-dimensional systems, fractionalization exists in quantum Hall fluids, where time-reversal symmetry is broken by a large external magnetic field. Recently, there has been a tremendous effort in the search for examples of fractionalization in two-dimensional systems with time-reversal symmetry. In this Letter, we show that fractionally charged topological excitations exist on graphenelike structures, where quasiparticles are described by two flavors of Dirac fermions and time-reversal symmetry is respected. The topological zero modes are mathematically similar to fractional vortices in p-wave superconductors. They correspond to a twist in the phase in the mass of the Dirac fermions, akin to cosmic strings in particle physics.

Weak localization in bilayer graphene

We have performed the first experimental investigation of quantum interference corrections to the conductivity of a bilayer graphene structure. A negative magnetoresistance--a signature of weak localization--is observed at different carrier densities, including the electroneutrality region. It is very different, however, from the weak localization in conventional two-dimensional systems. We show that it is controlled not only by the dephasing time, but also by different elastic processes that break the effective time-reversal symmetry and provide intervalley scattering.

Oscillating Nernst-Ettingshausen effect in bismuth across the quantum limit

In elemental bismuth, 10(5) atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the nonoscillating background. When the first Landau level attains the Fermi energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. These features are yet to be understood. We note a qualitative agreement with a theory invoking current-carrying edge excitations.

Electric field effect tuning of electron-phonon coupling in graphene

Gate-modulated low-temperature Raman spectra reveal that the electric field effect (EFE), pervasive in contemporary electronics, has marked impacts on long-wavelength optical phonons of graphene. The EFE in this two-dimensional honeycomb lattice of carbon atoms creates large density modulations of carriers with linear dispersion (known as Dirac fermions). Our EFE Raman spectra display the interactions of lattice vibrations with these unusual carriers. The changes of phonon frequency and linewidth demonstrate optically the particle-hole symmetry about the charge-neutral Dirac point. The linear dependence of the phonon frequency on the EFE-modulated Fermi energy is explained as the electron-phonon coupling of massless Dirac fermions.

Randomness-induced XY ordering in a graphene quantum hall ferromagnet

Valley-polarized quantum Hall states in graphene are described by a Heisenberg O(3) ferromagnet model, with the ordering type controlled by the strength and the sign of the valley anisotropy. A mechanism resulting from electron coupling to the strain-induced gauge field, giving a leading contribution to the anisotropy, is described in terms of an effective random magnetic field aligned with the ferromagnet z axis. We argue that such a random field stabilizes the XY ferromagnet state, which is a coherent equal-weight mixture of the K and K' valley states. The implications such as the Berezinskii-Kosterlitz-Thouless ordering transition and topological defects with half-integer charge are discussed.

Detection of valley polarization in graphene by a superconducting contact

Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection can be used to detect the valley polarization of edge states produced by a magnetic field. In the absence of intervalley relaxation, the conductance GNS=(2e2/h)(1-cosTheta) of the junction on the lowest quantum Hall plateau is entirely determined by the angle Theta between the valley isospins of the edge states approaching and leaving the superconductor. If the superconductor covers a single edge, Theta=0 and no current can enter the superconductor. A measurement of GNS then determines the intervalley relaxation time.

Anomalous absorption line in the magneto-optical response of graphene

The intensity as well as position in energy of the absorption lines in the infrared conductivity of graphene, both exhibit features that are directly related to the Dirac nature of its quasiparticles. We show that the evolution of the pattern of absorption lines as the chemical potential is varied encodes the information about the presence of the anomalous lowest Landau level. The first absorption line related to this level always appears with full intensity or is entirely missing, while all other lines disappear in two steps. We demonstrate that if a gap develops, the main absorption line splits into two provided that the chemical potential is greater than or equal to the gap.

Superconducting states of pure and doped graphene

We study the superconducting phases of the two-dimensional honeycomb lattice of graphene. We find two spin singlet pairing states; s wave and an exotic p+ip that is possible because of the special structure of the honeycomb lattice. At half filling, the p+ip phase is gapless and superconductivity is a hidden order. We discuss the possibility of a superconducting state in metal coated graphene.

Tunable quantum dots in bilayer graphene

We demonstrate theoretically that quantum dots in bilayers of graphene can be realized. A position-dependent doping breaks the equivalence between the upper and lower layer and lifts the degeneracy of the positive and negative momentum states of the dot. Numerical results show the simultaneous presence of electron and hole confined states for certain doping profiles and a remarkable angular momentum dependence of the quantum dot spectrum, which is in sharp contrast with that for conventional semiconductor quantum dots. We predict that the optical spectrum will consist of a series of nonequidistant peaks.

Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10 mT<B<5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.

Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

We propose a technique for achieving large improvements in carrier mobilities in 2- and 1-dimensional semiconductor nanostructures by modifying their dielectric environments. We show that by coating the nanostructures with high-kappa dielectrics, scattering from Coulombic impurities can be strongly damped. Though screening is also weakened, the damping of Coulombic scattering is much larger, and the resulting improvement in mobilities of carriers can be as much as an order of magnitude for thin 2D semiconductor membranes, and more for semiconductor nanowires.

Impurities in a biased graphene bilayer

We study the problem of impurities and midgap states in a biased graphene bilayer. We show that the properties of the bound states, such as localization lengths and binding energies, can be controlled externally by an electric field effect. Moreover, the band gap is renormalized and impurity bands are created at finite impurity concentrations. Using the coherent potential approximation, we calculate the electronic density of states and its dependence on the applied bias voltage.

Novel electric field effects on Landau levels in graphene

A new effect in graphene in the presence of crossed uniform electric and magnetic fields is predicted. Landau levels are shown to be modified in an unexpected fashion by the electric field, leading to a collapse of the spectrum, when the value of electric to magnetic field ratio exceeds a certain critical value. Our theoretical results, strikingly different from the standard 2D electron gas, are explained using a "Lorentz boost," and as an "instability of a relativistic quantum field vacuum." It is a remarkable case of emergent relativistic type phenomena in nonrelativistic graphene. We also discuss few possible experimental consequence.

Room-Temperature Quantum Hall Effect in Graphene

The quantum Hall effect (QHE), one example of a quantum phenomenon that occurs on a truly macroscopic scale, has attracted intense interest since its discovery in 1980 and has helped elucidate many important aspects of quantum physics. It has also led to the establishment of a new metrological standard, the resistance quantum. Disappointingly, however, the QHE has been observed only at liquid-helium temperatures. We show that in graphene, in a single atomic layer of carbon, the QHE can be measured reliably even at room temperature, which makes possible QHE resistance standards becoming available to a broader community, outside a few national institutions.

Conical diffraction and gap solitons in honeycomb photonic lattices

We study wave dynamics in honeycomb photonic lattices, and demonstrate the unique phenomenon of conical diffraction around the singular diabolical (zero-effective-mass) points connecting the first and second bands. This constitutes the prediction and first experimental observation of conical diffraction arising solely from a periodic potential. It is also the first study on k space singularities in photonic lattices. In addition, we demonstrate "honeycomb gap solitons" residing in the gap between the second and the third bands, reflecting the special properties of these lattices.

The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions

The focusing of electric current by a single p-n junction in graphene is theoretically predicted. Precise focusing may be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values. This finding may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.

The rise of graphene

Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

Breakdown of the adiabatic Born-Oppenheimer approximation in graphene

The adiabatic Born-Oppenheimer approximation (ABO) has been the standard ansatz to describe the interaction between electrons and nuclei since the early days of quantum mechanics. ABO assumes that the lighter electrons adjust adiabatically to the motion of the heavier nuclei, remaining at any time in their instantaneous ground state. ABO is well justified when the energy gap between ground and excited electronic states is larger than the energy scale of the nuclear motion. In metals, the gap is zero and phenomena beyond ABO (such as phonon-mediated superconductivity or phonon-induced renormalization of the electronic properties) occur. The use of ABO to describe lattice motion in metals is, therefore, questionable. In spite of this, ABO has proved effective for the accurate determination of chemical reactions, molecular dynamics and phonon frequencies in a wide range of metallic systems. Here, we show that ABO fails in graphene. Graphene, recently discovered in the free state, is a zero-bandgap semiconductor that becomes a metal if the Fermi energy is tuned applying a gate voltage, Vg. This induces a stiffening of the Raman G peak that cannot be described within ABO.

Bipolar supercurrent in graphene

Graphene--a recently discovered form of graphite only one atomic layer thick--constitutes a new model system in condensed matter physics, because it is the first material in which charge carriers behave as massless chiral relativistic particles. The anomalous quantization of the Hall conductance, which is now understood theoretically, is one of the experimental signatures of the peculiar transport properties of relativistic electrons in graphene. Other unusual phenomena, like the finite conductivity of order 4e(2)/h (where e is the electron charge and h is Planck's constant) at the charge neutrality (or Dirac) point, have come as a surprise and remain to be explained. Here we experimentally study the Josephson effect in mesoscopic junctions consisting of a graphene layer contacted by two closely spaced superconducting electrodes. The charge density in the graphene layer can be controlled by means of a gate electrode. We observe a supercurrent that, depending on the gate voltage, is carried by either electrons in the conduction band or by holes in the valence band. More importantly, we find that not only the normal state conductance of graphene is finite, but also a finite supercurrent can flow at zero charge density. Our observations shed light on the special role of time reversal symmetry in graphene, and demonstrate phase coherent electronic transport at the Dirac point.

The structure of suspended graphene sheets

The recent discovery of graphene has sparked much interest, thus far focused on the peculiar electronic structure of this material, in which charge carriers mimic massless relativistic particles. However, the physical structure of graphene--a single layer of carbon atoms densely packed in a honeycomb crystal lattice--is also puzzling. On the one hand, graphene appears to be a strictly two-dimensional material, exhibiting such a high crystal quality that electrons can travel submicrometre distances without scattering. On the other hand, perfect two-dimensional crystals cannot exist in the free state, according to both theory and experiment. This incompatibility can be avoided by arguing that all the graphene structures studied so far were an integral part of larger three-dimensional structures, either supported by a bulk substrate or embedded in a three-dimensional matrix. Here we report on individual graphene sheets freely suspended on a microfabricated scaffold in vacuum or air. These membranes are only one atom thick, yet they still display long-range crystalline order. However, our studies by transmission electron microscopy also reveal that these suspended graphene sheets are not perfectly flat: they exhibit intrinsic microscopic roughening such that the surface normal varies by several degrees and out-of-plane deformations reach 1 nm. The atomically thin single-crystal membranes offer ample scope for fundamental research and new technologies, whereas the observed corrugations in the third dimension may provide subtle reasons for the stability of two-dimensional crystals.

Quantum transport of massless Dirac fermions

Motivated by recent graphene transport experiments, we undertake a numerical study of the conductivity of disordered two-dimensional massless Dirac fermions. Our results reveal distinct differences between the cases of short-range and Coulomb randomly distributed scatterers. We speculate that this behavior is related to the Boltzmann transport theory prediction of dirty-limit behavior for Coulomb scatterers.

Magnetic confinement of massless Dirac fermions in graphene

Because of Klein tunneling, electrostatic potentials are unable to confine Dirac electrons. We show that it is possible to confine massless Dirac fermions in a monolayer graphene sheet by inhomogeneous magnetic fields. This allows one to design mesoscopic structures in graphene by magnetic barriers, e.g., quantum dots or quantum point contacts.

Spatially resolved Raman spectroscopy of single- and few-layer graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. By using a scanning confocal approach, we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

Electromechanical Resonators from Graphene Sheets

Nanoelectromechanical systems were fabricated from single- and multilayer graphene sheets by mechanically exfoliating thin sheets from graphite over trenches in silicon oxide. Vibrations with fundamental resonant frequencies in the megahertz range are actuated either optically or electrically and detected optically by interferometry. We demonstrate room-temperature charge sensitivities down to 8 x 10(-4) electrons per root hertz. The thinnest resonator consists of a single suspended layer of atoms and represents the ultimate limit of two-dimensional nanoelectromechanical systems.

Nonlinear signal mixing in a three-terminal molecular wire

The authors study the electronic response of two simple molecular devices to a bichromatic field, where the device acts as a mixer. Two closely related model systems are considered: one is a benzene molecule and the other is a single grapheme sheet, and in both cases the systems are connected to three polyacetylene chains. The electronic response to the dichromatic alternating electric fields is studied by following the electron density fluctuation along the chain lengths. In both cases the electron transfer follows the field frequency at low electric fields. At higher amplitude, a significant amount of nonlinear mixing resulting in new combinations of the input frequencies is found in the spectrum. The influence of gating on the output frequencies is also shown.

Spontaneous parity breaking of graphene in the Quantum Hall regime

We propose that the inversion symmetry of the graphene honeycomb lattice is spontaneously broken via a magnetic-field-dependent Peierls distortion. This leads to valley splitting of the n=0 Landau level but not of the other Landau levels. Compared to Quantum Hall valley ferromagnetism recently discussed in the literature, lattice distortion provides an alternative explanation to all of the currently observed Quantum Hall plateaus in graphene.

Quantum dots in graphene

We suggest a way of confining quasiparticles by an external potential in a small region of a graphene strip. Transversal electron motion plays a crucial role in this confinement. Properties of thus obtained graphene quantum dots are investigated theoretically for different types of the boundary conditions at the edges of the strip. The (quasi)bound states exist in all systems considered. At the same time, the dependence of the conductance on the gate voltage carries information about the shape of the edges.

Ballistic transport in graphene nanostrips in the presence of disorder: importance of edge effects

Stimulated by recent advances in isolating graphene and similarities to single-wall carbon nanotubes, simulations were performed to assess the effects of static disorder on the conductance of metallic armchair- and zigzag-edge graphene nanostrips. Both strip types were found to have outstanding ballistic transport properties in the presence of a substrate-induced disorder. However, only the zigzag-edge strips retain these properties in the presence of irregular edges, making them better initial synthetic targets for ballistic device applications.

Studying disorder in graphite-based systems by Raman spectroscopy

Raman spectroscopy has historically played an important role in the structural characterization of graphitic materials, in particular providing valuable information about defects, stacking of the graphene layers and the finite sizes of the crystallites parallel and perpendicular to the hexagonal axis. Here we review the defect-induced Raman spectra of graphitic materials from both experimental and theoretical standpoints and we present recent Raman results on nanographites and graphenes. The disorder-induced D and D' Raman features, as well as the G'-band (the overtone of the D-band which is always observed in defect-free samples), are discussed in terms of the double-resonance (DR) Raman process, involving phonons within the interior of the 1st Brillouin zone of graphite and defects. In this review, experimental results for the D, D' and G' bands obtained with different laser lines, and in samples with different crystallite sizes and different types of defects are presented and discussed. We also present recent advances that made possible the development of Raman scattering as a tool for very accurate structural analysis of nano-graphite, with the establishment of an empirical formula for the in- and out-of-plane crystalline size and even fancier Raman-based information, such as for the atomic structure at graphite edges, and the identification of single versus multi-graphene layers. Once established, this knowledge provides a powerful machinery to understand newer forms of sp(2) carbon materials, such as the recently developed pitch-based graphitic foams. Results for the calculated Raman intensity of the disorder-induced D-band in graphitic materials as a function of both the excitation laser energy (E(laser)) and the in-plane size (L(a)) of nano-graphites are presented and compared with experimental results. The status of this research area is assessed, and opportunities for future work are identified.

Thermoplasma polariton within scaling theory of single-layer graphene

The electrodynamics of single-layer graphene is studied in the scaling regime. At any finite temperature, there is a weakly damped collective thermoplasma polariton mode whose dispersion and wavelength-dependent damping is determined analytically. The electric and magnetic fields associated with this mode decay exponentially in the direction perpendicular to the graphene layer, but, unlike the surface plasma polariton modes of metals, the decay length and the mode frequency are strongly temperature-dependent. This may lead to new ways of generation and manipulation of these modes.

Nonadiabatic Kohn anomaly in a doped graphene monolayer

We compute, from first principles, the frequency of the E(2g), Gamma phonon (Raman G band) of graphene, as a function of the charge doping. Calculations are done using (i) the adiabatic Born-Oppenheimer approximation and (ii) time-dependent perturbation theory to explore dynamic effects beyond this approximation. The two approaches provide very different results. While the adiabatic phonon frequency weakly depends on the doping, the dynamic one rapidly varies because of a Kohn anomaly. The adiabatic approximation is considered valid in most materials. Here, we show that doped graphene is a spectacular example where this approximation miserably fails.

Robust transport properties in graphene

Two-dimensional Dirac fermions are used to discuss quasiparticles in graphene in the presence of impurity scattering. Transport properties are completely dominated by diffusion. This may explain why recent experiments did not find weak localization in graphene. The diffusion coefficient of the quasiparticles decreases strongly with increasing strength of disorder. Using the Kubo formalism, however, we find a robust minimal conductivity that is independent of disorder. This is a consequence of the fact that the change of the diffusion coefficient is fully compensated by a change of the number of delocalized quasiparticle states.

Electronic properties of graphene multilayers

We study the effects of disorder in the electronic properties of graphene multilayers, with special focus on the bilayer and the infinite stack. At low energies and long wavelengths, the electronic self-energies and density of states exhibit behavior with divergences near half filling. As a consequence, the spectral functions and the conductivities acquire anomalous properties. In particular, we show that the quasiparticle decay rate has a minimum as a function of energy, there is a universal minimum value for the in-plane conductivity of order e(2)/h per plane and, unexpectedly, the c-axis conductivity is enhanced by disorder at low doping, leading to an enormous conductivity anisotropy at low temperatures.

Landau level spectroscopy of ultrathin graphite layers

Far infrared transmission experiments are performed on ultrathin epitaxial graphite samples in a magnetic field. The observed cyclotron resonance-like and electron-positron-like transitions are in excellent agreement with the expectations of a single-particle model of Dirac fermions in graphene, with an effective velocity of c=1.03 x 10(6) m/s.

Dirac and normal fermions in graphite and graphene: implications of the quantum Hall effect

Spectral analysis of the Shubnikov-de Haas magnetoresistance oscillations and the quantum Hall effect (QHE) measured in quasi-2D highly oriented pyrolytic graphite (HOPG) [Phys. Rev. Lett. 90, 156402 (2003)] reveals two types of carriers: normal (massive) electrons with Berry phase 0 and Dirac-like (massless) holes with Berry phase pi. We demonstrate that recently reported integer- and semi-integer QHEs for bilayer and single-layer graphenes take place simultaneously in HOPG samples.

Effect of disorder on transport in graphene

Quenched disorder in graphene is characterized by 5 constants and experiences the logarithmic renormalization even from the spatial scales smaller than the Fermi wavelength. We derive and solve renormalization group equations (RGEs) describing the system at such scales. At larger scales, we derive a nonlinear supermatrix sigma model completely describing localization and crossovers between different ensembles. The parameters of this sigma model are determined by the solutions of the RGEs.