Highly polarized photoluminescence and photodetection from single indium phosphide nanowires

Germanium nanowire transistors: A comparison of electrical contacts patterned by electron beam lithography and beam-assisted chemical vapour deposition

Germanium (Ge) nanowires synthesized using the supercritical fluid-liquid-solid (SFLS) approach were assembled into single nanowire transistor device structures. After depositing the nanowires from solution onto an oxidized silicon substrate, they were electrically connected with source and drain electrodes using one of three approaches: electron beam lithography (EBL), focused ion-beam-(FIB)-assisted chemical vapour deposition, or focused electron-beam-(FEB)-assisted chemical vapour deposition. The electrical properties of the contacts varied greatly with the fabrication method used. Gold contacts patterned by EBL were plagued by high contact resistance with non-linear current-voltage behaviour and poor structural stability. Platinum metal contacts deposited by FEB and FIB were structurally stable with lower contact resistance. However, FIB damages the nanowire by ion milling, implantation, and amorphization. FEB on the other hand produces reliable ohmic electrical contact with minimal structural damage to the nanowire. Ge nanowires, surface-treated with isoprene or hexene prior to FEB device fabrication, exhibited the least resistive contacts with a total contact resistance of approximately 0.8 MΩ

Sol-Gel Template Synthesis and Photoluminescence of n- and p-Type Semiconductor Oxide Nanowires

A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.

Shrinking Nanowires by Kinetically Controlled Electrooxidation

Nanowires composed of antimony, gold, and bismuth telluride (Bi2Te3) were reduced in diameter by electrooxidation in aqueous solutions. When electrooxidation was carried out using low current densities (Jox < 150 microA cm(-2)), the mean wire diameter decreased in direct proportion to the oxidation time, as expected for a kinetically controlled process. Under these conditions, the diameter uniformity of nanowires remained constant as wires were shrunk from initial diameters of more than 120 nm to less than 40 nm, for Sb and Bi2Te3, and less than 60 nm for Au. Oxidized nanowires remained continuous for more than 100 microm. Electrooxidation at higher current densities rapidly introduced breaks into these nanowires. Electrochemical wire growth and shrinking by electrooxidation were integrated into a single electrochemical experiment that allowed the final mean diameter of nanowires to be specified with a precision of 5-10 nm.

Chemically tailorable colloidal particles from infinite coordination polymers

Micrometre- and nanometre-sized particles play important roles in many applications, including catalysis, optics, biosensing and data storage. Organic particles are usually prepared through polymerization of suitable monomers or precipitation methods. In the case of inorganic materials, particle fabrication tends to involve the reduction of a metal salt, or the controlled mixing of salt solutions supplying a metal cation and an elemental anion (for example, S2-, Se2-, O2-), respectively; in some instances, these methods even afford direct control over the shape of the particles produced. Another class of materials are metal-organic coordination polymers, which are based on metal ions coordinated by polydentate organic ligands and explored for potential use in catalysis, gas storage, nonlinear optics and molecular recognition and separations. In a subset of these materials, the use of organometallic complexes as ligands (so-called metalloligands) provides an additional level of tailorability, but these materials have so far not yet been fashioned into nano- or microparticles. Here we show that simple addition of an initiation solvent to a precursor solution of metal ions and metalloligands results in the spontaneous and fully reversible formation of a new class of metal-metalloligand particles. We observe initial formation of particles with diameters of a few hundred nanometres, which then coalesce and anneal into uniform and smooth microparticles. The ease with which these particles can be fabricated, and the ability to tailor their chemical and physical properties through the choice of metal and organic ligand used, should facilitate investigations of their scope for practical applications.

Polarized Raman Confocal Microscopy of Single Gallium Nitride Nanowires

Polarized Raman spectra and corresponding Raman scattering intensity images of an isolated gallium nitride nanowire with a diameter of 170 nm are presented. The sensitivity of the confocal microscope combined with a high-resolution piezoelectric stage enables analysis of the crystalline phase and crystallographic orientation of an individual nanowire with an excellent spatial and spectral resolution in a short acquisition time.

Electroluminescence from a single-nanocrystal transistor

We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of CdSe, devices with asymmetric tunnel barriers emit linearly polarized light. Combined analyses of the electrical and optical data indicate that the tunnel couplings between the nanorod and the metallic electrodes change significantly as a function of bias voltage and light emission results from the inelastic scattering of tunneling electrons.

Nanodiode based on a multiwall CN(x)/carbon nanotube intramolecular junction

We prepared multiwall carbon nanotubes (MWCNTs) from the pyrolysis of ferrocene, and CN(x) nanotubes from a mixture of ferrocene and melamine. Under well chosen synthesis conditions, massive multiwall CN(x)/carbon nanotube intramolecular junctions were successfully fabricated. The individual nanotubes were used as conductance channels to obtain their transport characteristic information. Measurement results showed that the current-voltage (I-V) curve of the CN(x)/CNT junction is highly asymmetric, behaving like a diode. Moreover, the devices are very stable in ambient environment. We attribute this nonlinear property of the CN(x)/CNT junctions to their two different atomic and electronic sections.

Growth and optical properties of strained GaAs-GaxIn 1-x P core-shell nanowires

We have synthesized GaAs-Ga(x)In(1-x)P (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor phase epitaxy. The nanowire core was grown Au-catalyzed at a low temperature (450 degrees C) where only little growth takes place on the side facets. The shell was added by growth at a higher temperature (600 degrees C), where the kinetic hindrance of the side facet growth is overcome. Photoluminescence measurements on individual nanowires at 5 K showed that the emission efficiency increased by 2 to 3 orders of magnitude compared to uncapped samples. Strain effects on the band gap of lattice mismatched core-shell nanowires were studied and confirmed by calculations based on deformation potential theory.

Sawtooth faceting in silicon nanowires

We observe in situ the vapor-liquid-solid (VLS) growth of Si nanowires, in UHV-CVD using Au catalyst. The nanowire sidewalls exhibit periodic sawtooth faceting, reflecting an oscillatory growth process. We interpret the facet alternation as resulting from the interplay of the geometry and surface energies of the wire and liquid droplet. Such faceting may be present in any VLS growth system in which there are no stable orientations parallel to the growth direction. The sawtooth structure has important implications for electronic mobility and scattering in nanowire devices.

Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors

We report optical scanning measurements on photocurrent in individual Si nanowire field effect transistors (SiNW FETs). We observe increases in the conductance of more than 2 orders of magnitude and a large conductance polarization anisotropy of 0.8, making our SiNW FETs a polarization-sensitive, high-resolution light detector. In addition, scanning images of photocurrent at various biases reveal the local energy-band profile especially near the electrode contacts. The magnitude and polarity of the photocurrent vary depending on the gate bias, a behavior that can be explained using band flattening and a Schottky-barrier-type change. This technique is a powerful tool for studying photosensitive nanoscale devices.

Optically bright quantum dots in single Nanowires

We fabricate and demonstrate optically active quantum dots embedded in single nanowires. Observation of photon antibunching proves the zero dimensionality of these heterostructures that can be epitaxially grown on various substrates, including silicon. We show that the nanowire dots are intense single photon sources, typically an order of magnitude brighter than self-assembled quantum dots. Due to control over their composition, size, and position, nanowire dots are ideal building blocks for fully controlled quantum dot molecules.

Short-Period Superlattice Structure of Sn-Doped In2O3(ZnO)4 and In2O3(ZnO)5 Nanowires

Two longitudinal superlattice structures of In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires were exclusively produced by a thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. The nanowires consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8% Sn. The X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. The high-resolution X-ray photoelectron spectrum suggests that In and Sn withdraw the electrons from Zn and enhance the number of dangling-bond O 2p states, resulting in the reduction of the band gap. Photoluminescence and cathodoluminescence exhibit the peak shift of near band edge emission to the lower energy and the enhancement of green emission as the In/Sn content increases.

Polarized-Light-Emitting Quantum-Rod Diodes

For the first time, polarized-light-emitting quantum-rod diodes have been successfully produced, using thin layers of quantum rods oriented by a rubbing technique. Diode emission at 620 nm with a luminance efficiency of 0.65 Cd A^-1 and an external quantum efficiency of 0.49 % is obtained.

Size-dependent photoconductivity in MBE-grown GaN-nanowires

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.

Lasing in single cadmium sulfide nanowire optical cavities

The mechanism of lasing in single cadmium sulfide (CdS) nanowire cavities was elucidated by temperature-dependent and time-resolved photoluminescence (PL) measurements. Temperature-dependent PL studies reveal rich spectral features and show that an exciton-exciton interaction is critical to lasing up to 75 K, while an exciton-phonon process dominates at higher temperatures. These measurements together with temperature and intensity dependent lifetime and threshold studies show that lasing is due to formation of excitons and, moreover, have implications for the design of efficient, low threshold nanowire lasers.

Low-Temperature Synthesis of Single Crystalline Ag2S Nanowires on Silver Substrates

We report on the successful synthesis of silver sulfide (Ag(2)S) nanowires by a simple and mild gas-solid reaction approach. For the nanowire synthesis, a preoxidized silver substrate is exposed to an atmosphere of an O(2)/H(2)S mixture at room temperature or slightly above. The resulting Ag(2)S nanowires are phase pure with a monoclinic crystal structure and have diameters of a few tens of nanometers and lengths up to 100 mum. The influence of reaction conditions on the diameter, length, and morphology of the Ag(2)S nanowires has been studied by a number of structural and spectroscopic techniques. The nanowire growth mechanism on the Ag substrate has been discussed, which is likely characterized by continuous deposition at the tip. Additionally, we demonstrate thinning and cutting of individual Ag(2)S nanowires with electron beams and laser beams, which are potentially useful for nanowire manipulation and engineering.

Synthesis of Quantum-Sized Cubic ZnS Nanorods by the Oriented Attachment Mechanism

Quantum-sized ZnS nanocrystals with quasi-spherical and rod shapes were synthesized by the aging reaction mixtures containing diethylzinc, sulfur, and amine. Uniform-sized ZnS nanorods with the average dimension of 5 nm x 21 nm, along with a small fraction of 5 nm-sized quasi-spherical nanocrystals, were synthesized by adding diethylzinc to a solution containing sulfur and hexadecylamine at 125 degrees C, followed by aging at 300 degrees C. Subsequent secondary aging of the nanocrystals in oleylamine at 60 degrees C for 24 h produced nearly pure nanorods. Structural characterizations showed that these nanorods had a cubic zinc blende structure, whereas the fabrication of nanorods with this structure has been known to be difficult to achieve via colloidal chemical synthetic routes. High-resolution TEM images and reaction studies demonstrated that these nanorods are formed from the oriented attachment of quasi-spherical nanocrystals. Monodisperse 5 nm-sized quasi-spherical ZnS nanocrystals were separately synthesized by adding diethylzinc to sulfur dissolved in a mixture of hexadecylamine and 1-octadecene at 45 degrees C, followed by aging at 300 degrees C. When oleic acid was substituted for hexadecylamine and all other procedures were unchanged, we obtained 10 nm-sized quasi-spherical ZnS nanocrystals, but with broad particle size distribution. These two different-sized quasi-spherical ZnS nanocrystals showed different proportions of zinc blende and wurtzite crystal structures. The UV absorption spectra and photoluminescence excitation spectra of the 5 nm ZnS quasi-spherical nanocrystals and of the nanorods showed a blue-shift from the bulk band-gap, thus showing a quantum confinement effect. The photoluminescence spectra of the ZnS nanorods and quasi-spherical nanocrystals showed a well-defined excitonic emission feature and size- and shape-dependent quantum confinement effects.

Controlled synthesis of LaPO(4) and CePO(4) nanorods/nanowires

LaPO(4) and CePO(4) nanorods/nanowires with controlled aspect ratios have been successfully synthesized using a hydrothermal microemulsion method under mild conditions. It has been shown that the obtained LaPO(4) has a monoclinic structure, while CePO(4) exists in the hexagonal structure. Uniform nanorods/nanowires with diameters of 20-60 nm and lengths ranging from several hundreds of nanometres to several micrometres were obtained. The aspect ratios of the obtained 1D nanostructures can be fine-tuned by simply changing the [H(2)O ]/[surfactant] molar ratios. The possible growth mechanism of LaPO(4) and CePO(4) nanorods/nanowires was explored in detail.

Molybdenum Disulfide Nanowires and Nanoribbons by Electrochemical/Chemical Synthesis

Molybdenum disulfide nanowires and nanoribbons have been synthesized by a two-step, electrochemical/chemical synthetic method. In the first step, MoO(x) wires (a mixture of MoO(2) and MoO(3)) were electrodeposited size-selectively by electrochemical step-edge decoration on a highly oriented pyrolytic graphite (HOPG) surface. Then, MoO(x) precursor wires were converted to MoS(2) by exposure to H(2)S either at 500-700 degrees C, producing "low-temperature" or LT MoS(2) nanowires that were predominantly 2H phase, or above 800 degrees C producing "high-temperature" or HT MoS(2) ribbons that were predominantly 3R phase. The majority of these MoS(2) wires and ribbons were more than 50 microm in length and were organized into parallel arrays containing hundreds of wires or ribbons. MoS(2) nanostructures were characterized by X-ray photoelectron spectroscopy, scanning and transmission electron microscopy, selected area electron diffraction, X-ray diffraction, UV-visible absorption spectrometry, and Raman spectroscopy. HT and LT MoS(2) nanowires were structurally distinct: LT MoS(2) wires were hemicylindrical in shape and nearly identical in diameter to the MoO(x) precursor wires from which they were derived. LT MoS(2) wires were polycrystalline, and the internal structure consisted of many interwoven, multilayer strands of MoS(2); HT MoS(2) ribbons were 50-800 nm in width and 3-100 nm thick, composed of planar crystallites of 3R-MoS(2). These layers grew in van der Waals contact with the HOPG surface so that the c-axis of the 3R-MoS(2) unit cell was oriented perpendicular to the plane of the graphite surface. Arrays of MoS(2) wires and ribbons could be cleanly separated from the HOPG surface and transferred to glass for electrical and optical characterization. Optical absorption measurements of HT MoS(2) nanoribbons reveal a direct gap near 1.95 eV and two exciton peaks, A1 and B1, characteristic of 3R-MoS(2). These exciton peaks shifted to higher energy by up to 80 meV as the wire thickness was decreased to 7 nm (eleven MoS(2) layers). The energy shifts were proportional to 1/ L( parallel)(2), and the effective masses were calculated. Current versus voltage curves for both LT and HT MoS(2) nanostructures were probed as a function of temperature from -33 degrees C to 47 degrees C. Conduction was ohmic and mainly governed by the grain boundaries residing along the wires. The thermal activation barrier was found to be related to the degree of order of the crystallites and can be tuned from 126 meV for LT nanowires to 26 meV for HT nanoribbons.

Exciton fine structure in single CdSe nanorods

We study the optical properties of excitons in one-dimensional (1D) nanostructures at low temperatures. In single CdSe/ZnS core-shell nanorods we observe a fine structure splitting and explain it by exchange interaction. Two peaks are observed with different degrees of linear polarization of DLP<0.85 and DLP>0.95. For small nanorod radii R< or =a(B)/2, an increase in the photoluminescence decay time is found when the temperature increases from 10 to 80 K. The observations are explained by a radius-dependent change in the symmetry of the 1D-exciton ground state which transforms from a dark state into bright states below a critical radius of R(crit) approximately 3.7 nm.

Molecular and nanoscale materials and devices in electronics

Over the past several years, there have been many significant advances toward the realization of electronic computers integrated on the molecular scale and a much greater understanding of the types of materials that will be useful in molecular devices and their properties. It was demonstrated that individual molecules could serve as incomprehensibly tiny switch and wire one million times smaller than those on conventional silicon microchip. This has resulted very recently in the assembly and demonstration of tiny computer logic circuits built from such molecular scale devices. The purpose of this review is to provide a general introduction to molecular and nanoscale materials and devices in electronics.

Three-dimensional Green's tensor, local density of states, and spontaneous emission in finite two-dimensional photonic crystals composed of cylinders

The three-dimensional local density of states (3D LDOS), which determines the radiation dynamics of a point-source, in particular the spontaneous emission rate, is presented here for finite two-dimensional photonic crystals composed of cylinders. The 3D LDOS is obtained from the 3D Green's tensor, which is calculated to high accuracy using a combination of a Fourier integral and the Rayleigh-multipole methods. A comprehensive investigation is made into the 3D LDOS of two basic types of PCs: a hexagonal cluster of air-voids in a dielectric background enclosed by an air-jacket in a fiberlike geometry, and a square cluster of dielectric cylinders in an air background. In the first of these, which has a complete in-plane band gap, the 3D LDOS can be suppressed by over an order of magnitude at the center of the air-voids and jumps sharply higher above the gap. In the second, which only has a TM gap in-plane, suppression is limited to a factor of 5 and occurs at the surface of the cylinders. The most striking band gap signature is the almost complete suppression of the radiation component of the 3D LDOS when the complete in-plane gap is sufficiently wide, accompanied by a burst into the radiation component above the gap.

Crystal Orientation-Ordered ZnS Nanowire Bundles

We report a novel approach for growing aligned and orientation-ordered ZnS nanowires. Our method relies on a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowire bundles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size-controlled, and orientation-ordered ZnS nanowires.

Photocurrents in nanotube junctions

Photocurrents in nanotube p-n junctions are calculated using a nonequilibrium Green function quantum transport formalism. The short-circuit photocurrent displays band-to-band transitions and photon-assisted tunneling, and has multiple sharp peaks in the infrared, visible, and ultraviolet. The operation of such devices in the nanoscale regime leads to unusual size effects, where the photocurrent scales linearly and oscillates with device length. The oscillations can be related to the density of states in the valence band, a factor that also determines the relative magnitude of the photoresponse for different bands.

Self-Organized, Highly Luminescent CdSe Nanorod−DNA Complexes

DNA molecules are useful building blocks and nanotemplates for controllable fabrication of various bioinorganic nanostructures due to their unique physical-chemical properties and recognition capabilities and the synthetic availability of desired nucleotide sequences and length. We have synthesized novel DNA complexes with positively charged, highly luminescent CdSe nanorods that can be self-organized into filamentary, netlike, or spheroidal nanostructures. DNA-CdSe-nanorod filaments possess strongly linearly polarized photoluminescence due to the unidirectional orientation of nanorods along the filaments.

Imaging and analysis of nanowires

We used vapor-liquid-solid (VLS) methods to synthesize discrete single-element semiconductor nanowires and multicomposition nanowire heterostructures, and then characterized their structure and composition using high-resolution electron microscopy (HRTEM) and analytical electron microscopy techniques. Imaging nanowires requires the modification of the established HRTEM imaging procedures for bulk material to take into consideration the effects of finite nanowire width and thickness. We show that high-resolution atomic structure images of nanowires less than 6 nm in thickness have lattice "streaking" due to the finite crystal lattice in two dimensions of the nanowire structure. Diffraction pattern analysis of nanowires must also consider the effects of a finite structure producing a large reciprocal space function, and we demonstrate that the classically forbidden 1/3 [422] reflections are present in the [111] zone axis orientation of silicon nanowires due to the finite thickness and lattice plane edge effects that allow incomplete diffracted beam cancellation. If the operating conditions are not carefully considered, we found that HRTEM image delocalization becomes apparent when employing a field emission transmission electron microscope (TEM) to image nanowires and such effects have been shown to produce images of the silicon lattice structure outside of the nanowire itself. We show that pseudo low-dose imaging methods are effective in reducing nanowire structure degradation caused by electron beam irradiation. We also show that scanning TEM (STEM) with energy dispersive X-ray microanalysis (EDS) is critical in the examination of multicomponent nanowire heterostructures.

Systematic Synthesis and Characterization of Single-Crystal Lanthanide Orthophosphate Nanowires

A simple hydrothermal method has been developed for the systematic synthesis of lanthanide orthophosphate crystals with different crystalline phases and morphologies. It has been shown that pure LnPO(4) compounds change structure with decreasing Ln ionic radius: i.e., the orthophosphates from Ho to Lu as well as Y exist only in the tetragonal zircon (xenotime) structure, while the orthophosphates from La to Dy exist in the hexagonal structure under hydrothermal treatment. The obtained hexagonal structured lanthanide orthophosphate LnPO(4) (Ln = La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, and Dy) products have a wirelike morphology. In contrast, tetragonal LnPO(4) (Ln = Ho, Er, Tm, Yb, Lu, Y) samples prepared under the same experimental conditions consist of nanoparticles. The obtained hexagonal LnPO(4) (Ln = La --> Tb) can convert to the monoclinic monazite structured products, and their morphologies remained the same after calcination at 900 degrees C in air (Hexagonal DyPO(4) is an exceptional case, it transformed to tetragonal DyPO(4) by calcination), while the tetragonal structure for (Ho--> Lu, Y)PO(4) remains unchanged by calcination. The resulting LnPO(4) (Ln = La --> Dy) products consist almost entirely of nanowires/nanorods with diameters of 5-120 nm and lengths ranging from several hundreds of nanometers to several micrometers. Europium doped LaPO(4) nanowires were also prepared, and their photoluminescent properties were reported. The optical absorption spectrum of CePO(4) nanowires was measured and showed some differences from that of bulk CePO(4) materials. The possible growth mechanism of lanthanide phosphate nanowires was explored in detail. X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, electron diffraction, infrared absorption spectra, X-ray photoelectron spectroscopy, optical absorption spectra, and photoluminescence spectra have been employed to characterize these materials.

Controlling anisotropic nanoparticle growth through plasmon excitation

Inorganic nanoparticles exhibit size-dependent properties that are of interest for applications ranging from biosensing and catalysis to optics and data storage. They are readily available in a wide variety of discrete compositions and sizes. Shape-selective synthesis strategies now also yield shapes other than nanospheres, such as anisotropic metal nanostructures with interesting optical properties. Here we demonstrate that the previously described photoinduced method for converting silver nanospheres into triangular silver nanocrystals--so-called nanoprisms--can be extended to synthesize relatively monodisperse nanoprisms with desired edge lengths in the 30-120 nm range. The particle growth process is controlled using dual-beam illumination of the nanoparticles, and appears to be driven by surface plasmon excitations. We find that, depending on the illumination wavelengths chosen, the plasmon excitations lead either to fusion of nanoprisms in an edge-selective manner or to the growth of the nanoprisms until they reach their light-controlled final size.

Viral assembly of oriented quantum dot nanowires

The highly organized structure of M13 bacteriophage was used as an evolved biological template for the nucleation and orientation of semiconductor nanowires. To create this organized template, peptides were selected by using a pIII phage display library for their ability to nucleate ZnS or CdS nanocrystals. The successful peptides were expressed as pVIII fusion proteins into the crystalline capsid of the virus. The engineered viruses were exposed to semiconductor precursor solutions, and the resultant nanocrystals that were templated along the viruses to form nanowires were extensively characterized by using high-resolution analytical electron microscopy and photoluminescence. ZnS nanocrystals were well crystallized on the viral capsid in a hexagonal wurtzite or a cubic zinc blende structure, depending on the peptide expressed on the viral capsid. Electron diffraction patterns showed single-crystal type behavior from a polynanocrystalline area of the nanowire formed, suggesting that the nanocrystals on the virus were preferentially oriented with their [001] perpendicular to the viral surface. Peptides that specifically directed CdS nanocrystal growth were also engineered into the viral capsid to create wurtzite CdS virus-based nanowires. Lastly, heterostructured nucleation was achieved with a dual-peptide virus engineered to express two distinct peptides within the same viral capsid. This work represents a genetically controlled biological synthesis route to a semiconductor nanoscale heterostructure.