Room-Temperature Quantum Hall Effect in Graphene

Free-standing epitaxial graphene

We report on a method to produce free-standing graphene sheets from epitaxial graphene on silicon carbide (SiC) substrate. Doubly clamped nanomechanical resonators with lengths up to 20 microm were patterned using this technique and their resonant motion was actuated and detected optically. Resonance frequencies of the order of tens of megahertz were measured for most devices, indicating that the resonators are much stiffer than expected for beams under no tension. Raman spectroscopy suggests that the graphene is not chemically modified during the release of the devices, demonstrating that the technique is a robust means of fabricating large-area suspended graphene structures.

Implantation and growth of dendritic gold nanostructures on graphene derivatives: electrical property tailoring and Raman enhancement

Interfacing electron-rich metal nanoparticles with graphene derivatives can sensitively regulate the properties of the resultant hybrid with potential applications in metal-doped graphene field-effect transistors (FETs), surface-enhanced Raman spectroscopy, and catalysis. Here, we show that by controlling the rate of diffusion and catalytic reduction of gold ions on graphene oxide (GO), dendritic "snowflake-shaped" gold nanostructures (SFGNs) can be templated on graphene. The structural features of the SFGNs and their interfacing mechanism with GO were characterized by microscopic analysis and Raman-scattering. We demonstrate that (a) SFGNs grow on GO-surface via diffusion limited aggregation; (b) SFGN's morphology (dendritic to globular), size (diameter of 150-500 nm and a height of 45-55 nm), coverage density, and dispersion stability can be controlled by regulating the chemiophysical forces; (c) SFGNs enhance the Raman signal by 2.5 folds; and (d) SFGNs act as antireduction resist during GO-SFGN's chemical reduction. Further, the SFGNs interfacing with graphene reduces the apparent band gap (from 320 to 173 meV) and the Schottky barrier height (from 126 to 56 meV) of the corresponding FET.

Evolving properties of two-dimensional materials: from graphene to graphite

We have studied theoretically, using density functional theory, several material properties when going from one C layer in graphene to two and three graphene layers and on to graphite. The properties we have focused on are the elastic constants, electronic structure (energy bands and density of states), and the dielectric properties. For any of the properties we have investigated the modification due to an increase in the number of graphene layers is within a few per cent. Our results are in agreement with the analysis presented recently by Kopelevich and Esquinazi (unpublished).

The transport properties of graphene

We review the transport properties of graphene, considering both the case of bulk graphene and that of nanoribbons of this material at zero magnetic field. We discuss: Klein tunneling, transport by evanescent waves when the chemical potential crosses the Dirac point, the conductance of narrow graphene ribbons, the optical conductivity of pristine graphene, and the effect of disorder on the DC conductivity of graphene.

Nanographene and nanodiamond; new members in the nanocarbon family

Nanographene and nanodiamond are new members of nanocarbons, which consist of nano-sized hexagonal and tetrahedral networks, respectively. The presence of edges and surfaces distinguishes nanographene and nanodiamond, respectively, from other nanocarbons owing to their structure dependent electronic features. Nanographene has an unconventional nonbonding pi-state (edge state) localized around its edge that is dependent on the edge geometry. The edge states, having localized spins, impart a nanographene-based molecular magnetic character. The structure and electronic/magnetic properties of nanodiamond vary depending on how the surface carbon atoms are terminated. Nanodiamond, with a naked surface, is subjected to structural reconstruction at the expense of sigma-dangling bonds. The hydrogenation of the surface is expected to give an electron reservoir function. The incompletely hydrogenated surface is magnetic with surface-induced spins.

Nonlinear dc transport in graphene

Considering electron-impurity, electron-acoustic-phonon and electron-optical-phonon scatterings, the nonlinear steady-state transport properties of graphene are studied theoretically by means of the balance equation approach. We find that the conductivity as a function of electric field strength, E, exhibits strongly nonlinear behavior for E larger than a critical value, E(c)≈0.1 kV cm(-1). With the increase of E from zero, the conductivity first decreases slowly and then it falls rapidly when E>E(c). The dependence of electron temperature on E is also demonstrated.

Spin gapless semiconductor-metal-half-metal properties in nitrogen-doped zigzag graphene nanoribbons

The geometries, formation energies, and electronic and magnetic properties of N-doping defects, including single atom substitution and pyridine- and pyrrole-like substructures in zigzag graphene nanoribbons (ZGNRs), were investigated by means of spin-unrestricted density functional theory computations. The edge carbon atoms are more easily substituted with N atoms, and three-nitrogen vacancy (3NV) defect and four-nitrogen divacancy (4ND) defect also prefer the ribbon edge. Single N atom substitution and pyridine- and pyrrole-like N-doping defects can all break the degeneracy of the spin polarization of pristine ZGNRs. One single N atom substitution makes the antiferromagnetic semiconducting ZGNRs into spin gapless semiconductors, while double edge substitution transforms N-doped graphenes into metals. Pyridine- and pyrrole-like N-doping defects make ZGNRs into half-metals or spin gapless semiconductors. These results suggest the potential applications of N-doped ZGNRs in nanoelectronics.

Tight-binding modeling and low-energy behavior of the semi-Dirac point

We develop a tight-binding model description of semi-Dirac electronic spectra, with highly anisotropic dispersion around point Fermi surfaces, recently discovered in electronic structure calculations of VO2-TiO2 nanoheterostructures. We contrast their spectral properties with the well-known Dirac points on the honeycomb lattice relevant to graphene layers and the spectra of bands touching each other in zero-gap semiconductors. We also consider the lowest order dispersion around one of the semi-Dirac points and calculate the resulting electronic energy levels in an external magnetic field. In spite of apparently similar electronic structures, Dirac and semi-Dirac systems support diverse low-energy physics.

Evidence for strain-induced local conductance modulations in single-layer graphene on SiO2

Graphene has emerged as an electronic material that is promising for device applications and for studying two-dimensional electron gases with relativistic dispersion near two Dirac points. Nonetheless, deviations from Dirac-like spectroscopy have been widely reported with varying interpretations. Here we show evidence for strain-induced spatial modulations in the local conductance of single-layer graphene on SiO(2) substrates from scanning tunneling microscopic (STM) studies. We find that strained graphene exhibits parabolic, U-shaped conductance vs bias voltage spectra rather than the V-shaped spectra expected for Dirac fermions, whereas V-shaped spectra are recovered in regions of relaxed graphene. Strain maps derived from the STM studies further reveal direct correlation with the local tunneling conductance. These results are attributed to a strain-induced frequency increase in the out-of-plane phonon mode that mediates the low-energy inelastic charge tunneling into graphene.

Photoconductivity of bulk-film-based graphene sheets

Time-resolved photoconductivity measurements are carried out on graphene films prepared by using soluble graphene oxide. High photocurrent generation efficiency is observed for these graphene-based films, and the relationships between their photoconductivity and different preparation methods, incident light intensity, external electric field, and photon energies are investigated. Higher photoconductivity is observed with higher photon energy at same incident light intensity. By fitting the experimental data to the Onsager model, the primary quantum yields for charge separation to generate bound electron-hole pairs and the initial ion-pair thermalization separation distance are calculated.

Adsorption of ammonia on graphene

We report on experimental studies of NH3 adsorption/desorption on graphene surfaces. The study employs bottom-gated graphene field effect transistors supported on Si/SiO2 substrates. Detection of NH3 occurs through the shift of the source-drain resistance maximum ('Dirac peak') with the gate voltage. The observed shift of the Dirac peak toward negative gate voltages in response to NH3 exposure is consistent with a small charge transfer (f approximately 0.068 +/- 0.004 electrons per molecule at pristine sites) from NH3 to graphene. The desorption kinetics involves a very rapid loss of NH3 from the top surface and a much slower removal from the bottom surface at the interface with the SiO2 that we identify with a Fickian diffusion process.

In situ observation of graphene sublimation and multi-layer edge reconstructions

We induced sublimation of suspended few-layer graphene by in situ Joule-heating inside a transmission electron microscope. The graphene sublimation fronts consisted of mostly {1100} zigzag edges. Under appropriate conditions, a fractal-like "coastline" morphology was observed. Extensive multiple-layer reconstructions at the graphene edges led to the formation of unique carbon nanostructures, such as sp(2)-bonded bilayer edges (BLEs) and nanotubes connected to BLEs. Flat fullerenes/nanopods and nanotubes tunneling multiple layers of graphene sheets were also observed. Remarkably, >99% of the graphene edges observed during sublimation are BLEs rather than monolayer edges (MLEs), indicating that BLEs are the stable edges in graphene at high temperatures. We reproduced the "coastline" sublimation morphologies by kinetic Monte Carlo (kMC) simulations. The simulation revealed geometrical and topological features unique to quasi-2-dimensional (2D) graphene sublimation and reconstructions. These reconstructions were enabled by bending, which cannot occur in first-order phase transformations of 3D bulk materials. These results indicate that substrate of multiple-layer graphene can offer unique opportunities for tailoring carbon-based nanostructures and engineering novel nano-devices with complex topologies.

Real-time study of graphene's phase transition in polymer matrices

We present real-time study of pristine graphene sandwiched in a homogeneous polymer matrix and its phase transition where the graphene membrane irreversibly scrolls and folds above the polymer's glass temperature. Tubular structures tend to form by curling up from edge defects of graphene and roll along its surface. A single-layer can also fold into two- or three-layer stacks and the overlapping between layers extends along the membrane surface to enlarge up to micrometer sizes. Further, oxidized graphene does not show such reactivity at even higher temperatures, indicating that the intrinsic thermal instability of pristine graphene in the polymer matrix is the origin of the transition.

Low-temperature solution processing of graphene-carbon nanotube hybrid materials for high-performance transparent conductors

We report the formation of a nanocomposite comprised of chemically converted graphene and carbon nanotubes. Our solution-based method does not require surfactants, thus preserving the intrinsic electronic and mechanical properties of both components, delivering 240 ohms/square at 86% transmittance. This low-temperature process is completely compatible with flexible substrates and does not require a sophisticated transfer process. We believe that this technology is inexpensive, is massively scalable, and does not suffer from several shortcomings of indium tin oxide. A proof-of-concept application in a polymer solar cell with power conversion efficiency of 0.85% is demonstrated. Preliminary experiments in chemical doping are presented and show that optimization of this material is not limited to improvements in layer morphology.

Raman spectroscopy of graphene edges

Graphene edges are of particular interest since their orientation determines the electronic properties. Here we present a detailed Raman investigation of graphene flakes with edges oriented at different crystallographic directions. We also develop a real space theory for Raman scattering to analyze the general case of disordered edges. The position, width, and intensity of G and D peaks are studied as a function of the incident light polarization. The D-band is strongest for polarization parallel to the edge and minimum for perpendicular. Raman mapping shows that the D peak is localized in proximity of the edge. For ideal edges, the D peak is zero for zigzag orientation and large for armchair, allowing in principle the use of Raman spectroscopy as a sensitive tool for edge orientation. However, for real samples, the D to G ratio does not always show a significant dependence on edge orientation. Thus, even though edges can appear macroscopically smooth and oriented at well-defined angles, they are not necessarily microscopically ordered.

B2C graphene, nanotubes, and nanoribbons

We report a first-principles prediction of a new two-dimensional inorganic material, namely, the B(2)C graphene in which the boron and carbon atoms are packed into a mosaic of hexagons and rhombuses. In the B(2)C graphene, each carbon atom is bonded with four boron atoms, forming a planar-tetracoordinate carbon (ptC) moiety, a notion first conceived by Hoffmann et al. The B(2)C graphene is possibly a metal with a small overlap in the energy of conduction and valence bands. Like the carbon graphene and nanotubes, a B(2)C graphene sheet can be rolled into various forms of B(2)C nanotubes as well. Depending on the roll-up vector, the B(2)C nanotubes may become either a metal or a semiconductor. All B(2)C graphene nanoribbons are predicted to be uniformly metallic, regardless of their width and edge structure.

Exposure of epitaxial graphene on SiC(0001) to atomic hydrogen

Graphene films on SiC exhibit coherent transport properties that suggest the potential for novel carbon-based nanoelectronics applications. Recent studies suggest that the role of the interface between single layer graphene and silicon-terminated SiC can strongly influence the electronic properties of the graphene overlayer. In this study, we have exposed the graphitized SiC to atomic hydrogen in an effort to passivate dangling bonds at the interface, while investigating the results utilizing room temperature scanning tunneling microscopy.

Intrinsic half-metallicity in modified graphene nanoribbons

We perform first-principles calculations based on density functional theory to study quasi-one-dimensional edge-passivated (with hydrogen) zigzag graphene nanoribbons of various widths with chemical dopants, boron and nitrogen, keeping the whole system isoelectronic. The gradual increase in doping concentration takes the system finally to zigzag boron nitride nanoribbons (ZBNNRs). Our study reveals that for all doping concentrations the systems stabilize in antiferromagnetic ground states. Doping concentrations and dopant positions regulate the electronic structure of the nanoribbons, exhibiting both semiconducting and half-metallic behaviors as a response to the external electric field. Interestingly, our results show that ZBNNRs with a terminating polyacene unit exhibit half-metallicity irrespective of the ribbon width as well as applied electric field, opening a huge possibility in spintronics device applications.

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore's law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator. For such applications, uniform ordered growth of graphene on an insulating substrate is necessary. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum was previously proposed to open a route for large-scale production of graphene-based devices. However, vacuum decomposition of SiC yields graphene layers with small grains (30-200 nm; refs 14-16). Here, we show that the ex situ graphitization of Si-terminated SiC(0001) in an argon atmosphere of about 1 bar produces monolayer graphene films with much larger domain sizes than previously attainable. Raman spectroscopy and Hall measurements confirm the improved quality of the films thus obtained. High electronic mobilities were found, which reach mu=2,000 cm (2) V(-1) s(-1) at T=27 K. The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis.

Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2

Using scanning tunneling microscopy in an ultrahigh vacuum and atomic force microscopy, we investigate the corrugation of graphene flakes deposited by exfoliation on a Si/SiO2 (300 nm) surface. While the corrugation on SiO2 is long range with a correlation length of about 25 nm, some of the graphene monolayers exhibit an additional corrugation with a preferential wavelength of about 15 nm. A detailed analysis shows that the long-range corrugation of the substrate is also visible on graphene, but with a reduced amplitude, leading to the conclusion that the graphene is partly freely suspended between hills of the substrate. Thus, the intrinsic rippling observed previously on artificially suspended graphene can exist as well, if graphene is deposited on SiO2.

Nonlinear bending and stretching of a circular graphene sheet under a central point load

Understanding of the bending and stretching properties of graphene is crucial in guiding its growth and applications. In this paper, we investigate the deformation of a single layer, circular, graphene sheet under a central point load by carrying out molecular mechanics (MM) simulations. The bending and stretching of the graphene sheet are characterized by using the von Kármán plate theory. Stress concentrations near the loaded region and the boundary due to bending rigidity of the graphene sheet are highlighted. It is shown herein that, with properly selected parameters, the von Kármán plate theory can provide a remarkably accurate prediction of the graphene sheet behavior under linear and nonlinear bending and stretching.

Ultrafast carrier kinetics in exfoliated graphene and thin graphite films

Time-resolved transmissivity and reflectivity of exfoliated graphene and thin graphite films on a 295 K SiO(2)/Si substrate are measured at 1300 nm following excitation by 150 fs, 800 nm pump pulses. From the extracted transient optical conductivity we identify a fast recovery time constant which increases from approximately 200 to 300 fs and a longer one which increases from 2.5 to 5 ps as the number of atomic layers increases from 1 to approximately 260. We attribute the temporal recovery to carrier cooling and recombination with the layer dependence related to substrate coupling. Results are compared with related measurements for epitaxial, multilayer graphene.

Localized spins on graphene

The problem of a magnetic impurity, atomic or molecular, absorbed on top of a carbon atom in otherwise clean graphene is studied using the numerical renormalization group. The spectral, thermodynamic, and scattering properties of the impurity are described in detail. In the presence of a small magnetic field, the low-energy electronic features of graphene make it possible to inject spin-polarized currents through the impurity using a scanning tunneling microscope. Furthermore, the impurity scattering becomes strongly spin dependent and for a finite impurity concentration it leads to spin-polarized bulk currents and a large magnetoresistance. In gated graphene the impurity spin is Kondo screened at low temperatures. However, at temperatures larger than the Kondo temperature, the anomalous magnetotransport properties are recovered.

Exact solutions for a Dirac electron in an exponentially decaying magnetic field

We consider a Dirac electron in the presence of an exponentially decaying magnetic field. We obtain exact energy eigenvalues with a zero-energy state and the corresponding eigenfunctions. We also calculate the probability density and current distributions.

Open and closed edges of graphene layers

Edge structures of thermally treated graphite have been studied by means of atomically resolved high-resolution TEM. The method for the determination of a monolayer or more than one layer graphene sheets is established. A series of tilting experiments proves that the zigzag and armchair edges are mostly closed between adjacent graphene layers, and the number of dangling bonds is therefore minimized. Surprisingly bilayer graphene often exhibits AA stacking and is very hard to distinguish from a single graphene layer. Open edge structures with carbon dangling bonds can be found only in a local area where the closed (folding) edge is partially broken.

Approaching the dirac point in high-mobility multilayer epitaxial graphene

Multilayer epitaxial graphene is investigated using far infrared transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance-like absorption is observed at low temperature in magnetic fields below 50 mT, probing the nearest vicinity of the Dirac point. The carrier mobility is found to exceed 250,000 cm2/(V x s). In the limit of high temperatures, the well-defined Landau level quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unusual in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated.

Bottom-up growth of epitaxial graphene on 6H-SiC(0001)

We use in situ low temperature scanning tunneling microscopy (STM) to investigate the growth mechanism of epitaxial graphene (EG) thermally grown on Si-terminated 6H-SiC(0001). Our detailed study of the transition from monolayer EG to trilayer EG reveals that EG adopts a bottom-up growth mechanism. The thermal decomposition of one single SiC bilayer underneath the EG layers causes the accumulation of carbon atoms to form a new graphene buffer layer at the EG/SiC interface. Atomically resolved STM images show that the top EG layer is physically continuous across the boundaries between the monolayer and bilayer EG regions and between the bilayer and trilayer EG regions.

Molecular design of stable graphene nanosheets dispersions

Graphene sheets, one-atom-thick layers of carbon atoms, are receiving enormous scientific attention because of extraordinary electronic and mechanical properties. These intrinsic properties will lead to innovative nanocomposite materials that could be used to produce novel transistors and thermally conductive polymeric materials. Such applications are currently hindered by the difficulty of producing large quantities of individual graphene sheets and by the propensity of these nanoparticles to agglomerate when dispersed in aqueous and/or organic matrixes. We report here molecular dynamics simulations for pristine and functionalized graphene nanosheets of 54 and 96 carbon atoms each dispersed in liquid organic linear alkanes (oils) at room conditions. For the first time, our results show that, although pristine graphene sheets agglomerate in the oils considered, graphene sheets functionalized at their edges with short branched alkanes yield stable dispersions. We characterized the simulated systems by computing radial distribution functions between the graphene sheets centers of mass, pair potentials of mean force between the graphene sheets in solution, and site-site radial distribution functions. The latter were used to determine the preferential orientation between approaching graphene sheets and the packing of the organic oils on the graphene sheets. Our results are useful not only for designing practical recipes for stabilizing graphene sheets in organic systems, but also for comparing the molecular mechanisms responsible for the graphene sheets aggregation to those that stabilize graphene sheets-containing dispersions, and for controlling the coupling between organic oils and graphene sheets used as fillers. In particular, we demonstrated that excluded-volume effects, generated by the branched architecture of the functional groups grafted on the graphene sheets, are responsible for the stabilization of small graphene sheets in the organic systems considered here.