Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I_on/I_off ratio of 4.91 × 10³, a high photoconductive gain of 1.10 × 10³, a high detectivity of 1.65 × 10¹³ Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm^-2). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

An ultrafast-temporally-responsive flexible photodetector with high sensitivity based on high-crystallinity organic-inorganic perovskite nanoflake

Flexible cameras are important early warning wearable devices to protect security personnel from dangerous events. However, the desired key component of flexible cameras, a highly-sensitive and high-response-speed flexible photodetector, is difficult to create using conventional inorganic semiconductors. Here, we propose a low-temperature synthesis method to grow perovskite nanoflakes with high flexibility and crystallinity on a polymeric substrate. Furthermore, a high-performance flexible photodetector based on the obtained perovskite nanoflakes was fabricated. Its photoresponsivity rivals the highest values reported and, simultaneously, its response speed is faster than those of most current flexible photodetectors by 1-3 orders of magnitude.

Dielectrophoretic-Assembled Single and Parallel-Aligned Ag Nanowire-ZnO-Branched Nanorod Heteronanowire Ultraviolet Photodetectors

The branched hierarchical heteronanowires have been widely studied for optoelectronics application because of their unique electronic and photonic performances. Here, we successfully synthesized Ag nanowire-ZnO-branched nanorod heteronanowires based on an improved hydrothermal method. Then we fabricated single heteronanowire across a Au electrode pair with different gap widths and parallel-aligned heteronanowires on a Au interdigitated electrode with a dielectrophoresis method, indicating the flexibility and operability of the dielectrophoresis assembly method. Increased photocurrent and shortened response time could be obtained by air-annealing and Ar-plasma post-treatments. A large responsivity of 2.5 A W^-1 and a linear dynamic range of 74 dB could be obtained, indicating stable responsivity for both weak and strong illumination. The excellent photoresponse performance is attributed to the structure superiority of heteronanowires. The proposed strategy of dielectrophoresis-assembled heteronanowires provides a new opportunity to design and fabricate hierarchical nanostructure photodetectors.

Self-powered ZnS Nanotubes/Ag Nanowires MSM UV Photodetector with High On/Off Ratio and Fast Response Speed

In this study, we design and demonstrate a novel type of self-powered UV photodetectors (PDs) using single-crystalline ZnS nanotubes (NTs) as the photodetecting layer and Ag nanowires (NWs) network as transparent electrodes. The self-powered UV PDs with asymmetric metal-semiconductor-metal (MSM) structure exhibit attractive photovoltaic characteristic at 0 V bias. Device performance analysis reveals that the as-assembled PDs have a high on/off ratio of 19173 and a fast response speed (τ_r = 0.09 s, τ_f = 0.07 s) without any external bias. These values are even higher than that of ZnS nanostructures- and ZnS heterostructure-based PDs at a large bias voltage. Besides, its UV sensivity, responsivity and detectivity at self-powered mode can reach as high as 19172, 2.56 A/W and 1.67 × 10¹⁰ cm Hz^1/2 W^-1, respectively. In addition, the photosensing performance of the self-powered UV PDs is studied in different ambient conditions (e.g., in air and vacuum). Moreover, a physical model based on band energy theory is proposed to explain the origin of the self-driven photoresponse characteristic in our device. The totality of the above study signifies that the present self-powered ZnS NTs-based UV nano-photodetector may have promising application in future self-powered optoelectronic devices and integrated systems.

Organics filled one-dimensional TiO2 nanowires array ultraviolet detector with enhanced photo-conductivity and dark-resistivity

A heterojunction photo-conductive ultraviolet (UV) detector was developed based on TiO₂ nanowires array (NWA) surrounded by N,N'-bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). The novel and effective two-step method of static infusion and dynamic solution-cleaning was employed to fill NPB into TiO₂ NWA gaps and simultaneously remove the unwelcomed top NPB layer. The device fabricated via the two-step method exhibited optimal performance compared to TiO₂/NPB device with top NPB layer and TiO₂ NWA device. In dark conditions, the TiO₂/NPB heterojunction device without top NPB was found to possess the capacity of depleting majority carriers, thereby providing improved dark-resistivity to limit the dark current (I_d). Under UV illumination, the depleting effect could be eliminated by the dissociation and accumulation of photo-generated carriers between pn heterojunction, leading to increased carrier density and photo-conductivity. It cleared up the high barrier due to the removal of top NPB layer, which was beneficial for hot electron transport than the device with top NPB layer under illumination, thereby achieving an enhanced light current (I_l) to I_d ratio of 1.67 × 10⁴. A simple technology is provided to prepare organic-inorganic hybrid one-dimensional array heterostructure, which plays a remarkable role in the working of the UV detector, enhancing photo-conductivity and dark-resistivity of the device.

Gold nanoparticle-embedded silk protein-ZnO nanorod hybrids for flexible bio-photonic devices

Silk protein has been used as a biopolymer substrate for flexible photonic devices. Here, we demonstrate ZnO nanorod array hybrid photodetectors on Au nanoparticle-embedded silk protein for flexible optoelectronics. Hybrid samples exhibit optical absorption at the band edge of ZnO as well as plasmonic energy due to Au nanoparticles, making them attractive for selective UV and visible wavelength detection. The device prepared on Au-silk protein shows a much lower dark current and a higher photo to dark-current ratio of ∼10⁵ as compared to the control sample without Au nanoparticles. The hybrid device also exhibits a higher specific detectivity due to higher responsivity arising from the photo-generated hole trapping by Au nanoparticles. Sharp pulses in the transient photocurrent have been observed in devices prepared on glass and Au-silk protein substrates due to the light induced pyroelectric effect of ZnO, enabling the demonstration of self-powered photodetectors at zero bias. Flexible hybrid detectors have been demonstrated on Au-silk/polyethylene terephthalate substrates, exhibiting characteristics similar to those fabricated on rigid glass substrates. A study of the performance of photodetectors with different bending angles indicates very good mechanical stability of silk protein based flexible devices. This novel concept of ZnO nanorod array photodetectors on a natural silk protein platform provides an opportunity to realize integrated flexible and self-powered bio-photonic devices for medical applications in near future.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10^-11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Ultrasensitive and Highly Selective Photodetections of UV-A Rays Based on Individual Bicrystalline GaN Nanowire

The detection of UV-A rays (wavelength of 320-400 nm) using functional semiconductor nanostructures is of great importance in either fundamental research or technological applications. In this work, we report the catalytic synthesis of peculiar bicrystalline GaN nanowires and their utilization for building high-performance optoelectronic nanodevices. The as-prepared UV-A photodetector based on individual bicrystalline GaN nanowire demonstrates a fast photoresponse time (144 ms), a high wavelength selectivity (UV-A light response only), an ultrahigh photoresponsivity of 1.74 × 10⁷ A/W and EQE of 6.08 × 10⁹%, a sensitivity of 2 × 10⁴%, and a very large on/off ratio of more than two orders, as well as robust photocurrent stability (photocurrent fluctuation of less than 7% among 4000 s), showing predominant advantages in comparison with other peer semiconductor photodetectors. The outstanding optoelectronic performance of the bicrystalline GaN nanowire UV-A photodetector is further analyzed based on a detailed high-resolution transmission electron microscope (HRTEM) study, and the two separated crystal domains within the GaN nanowires are believed to provide separated and rapid carrier transfer channels. This work paves a solid way toward the integration of high-performance optoelectronic nanodevices based on bicrystalline or horizontally aligned one-dimensional semiconductor nanostructures.

A high performance ZnO based photoelectrochemical cell type UV photodetector with [Co(bpy)3]3+/2+ electrolyte and PEDOT/ITO counter electrode

A high performance photoelectrochemical cell UV photodetector was prepared based on ZnO NRs, Co-complex electrolyte and PEDOT counter electrode.

Controllable seeded flux growth and optoelectronic properties of bulk o-SiP crystals

Seeded flux growth of bulk o-SiP single crystals with a layered structure, clear photo-switching behavior and relatively fast response.

Photonics and optoelectronics of two-dimensional materials beyond graphene

Apart from conventional materials, the study of two-dimensional (2D) materials has emerged as a significant field of study for a variety of applications. Graphene-like 2D materials are important elements of potential optoelectronics applications due to their exceptional electronic and optical properties. The processing of these materials towards the realization of devices has been one of the main motivations for the recent development of photonics and optoelectronics. The recent progress in photonic devices based on graphene-like 2D materials, especially topological insulators (TIs) and transition metal dichalcogenides (TMDs) with the methodology level discussions from the viewpoint of state-of-the-art designs in device geometry and materials are detailed in this review. We have started the article with an overview of the electronic properties and continued by highlighting their linear and nonlinear optical properties. The production of TIs and TMDs by different methods is detailed. The following main applications focused towards device fabrication are elaborated: (1) photodetectors, (2) photovoltaic devices, (3) light-emitting devices, (4) flexible devices and (5) laser applications. The possibility of employing these 2D materials in different fields is also suggested based on their properties in the prospective part. This review will not only greatly complement the detailed knowledge of the device physics of these materials, but also provide contemporary perception for the researchers who wish to consider these materials for various applications by following the path of graphene.

3D-branched hierarchical 3C-SiC/ZnO heterostructures for high-performance photodetectors

The ultra-sensitive photodetection of different wavelengths holds promising applications in high-performance optoelectronic devices and it requires an efficient and suitable semiconductor unit. Herein, we demonstrated the designable synthesis of 3D-branched hierarchical 3C-SiC/ZnO heterostructures by a three-step process and their assembling into an ultrasensitive photodetector. Microstructure analyses using high-resolution transmission electron microscopy reveal that the hierarchical 3C-SiC/ZnO heterostructure is composed of single-crystal 3C-SiC nanowires as a central stem and numerous well-aligned single-crystalline ZnO nanorods as branch shells. Optoelectronic tests on the 3C-SiC/ZnO heterostructure photodetector verify the outstanding photo-detection performance with an ultrahigh EQE (1.69 × 10⁸%), a superior photoresponsivity (4.8 × 10⁵ A W^-1), a very fast response time (a rise time of 40 ms and a decay time of 60 ms), a high photo-dark current ratio of 187.8 and an excellent photocurrent stability and reproducibility, which is significantly advantageous or comparable to those of ZnO and other inorganic semiconductor nanostructure based photodetectors. To understand the excellent photodetection of hierarchical 3C-SiC/ZnO heterostructures, a band-gap energy diagram describing the photogenerated electron transport process is plotted and the corresponding mechanism is discussed. The strategy proposed in the present work will open up more opportunities for the design and boost of ultra-sensitive photodetectors based on semiconductor heterostructures.

High-performance flexible ZnO nanorod UV photodetectors with a network-structured Cu nanowire electrode

In this work, vertically aligned zinc oxide (ZnO) nanorod (NR)-based flexible ultraviolet (UV) photodetectors were successfully fabricated on a polyimide (PI) substrate with a copper (Cu) nanowire (NW) electrode. To enhance the flexibility and sensing properties, the entangled networks of Cu NWs were applied to UV photodetectors as a flexible electrode. Here, Cu NWs have a high conductivity with a low cost compared to other metals to achieve a Schottky contact with ZnO NRs. Moreover, because of forming a network structure, the surface of the sensing material has a large contact area with oxygen molecules, resulting in a faster response time. The Cu NW electrode exhibited a high optical transmittance of 90%, a considerable sheet resistance of 50 Ω sq^-1, and a work function of 5.12 eV. Consequentially, the fabricated UV photodetector with Cu NW electrodes showed excellent UV sensing properties with a very fast rising time of 0.7 s and a decay time of 1.9 s in the dark and under UV illumination (365 nm, 0.40 mW cm^-2) at a reverse bias of -2.0 V. Furthermore, during the bending test at a radius of curvature of 5 mm, the flexible ZnO NR UV photodetectors with Cu NW electrodes exhibited almost unchanged UV sensing properties even after 5000 cycles.

High-performance ultraviolet photodetectors based on CdS/CdS:SnS2 superlattice nanowires

CdS heterostructure nanomaterials are attractive for their potential applications in integrated optoelectronic devices. Herein, the high-quality CdS/CdS:SnS2 superlattice nanowires were synthesized through a micro-environmental controlled co-evaporation technique, which shows periodic emission properties and that their structures are periodic and alternating. For the first time, we demonstrate the fabrication of high-performance ultraviolet photodetectors using unique CdS/CdS:SnS2 superlattice nanowires. The optoelectronic properties of the photodetectors were studied and compared to those devices based on pure CdS nanowires. The as-fabricated photodetectors (under 365 nm) based on CdS/CdS:SnS2 superlattice nanowires showed a high photocurrent to dark current ratio of 10(5), a large photoresponsivity of 2.5 × 10(3) A W(-1), a fast response time of 10 ms and an excellent external quantum efficiency of 8.6 × 10(5) at room temperature, which shows better performance than pure CdS nanowires photodetectors. The results indicate that CdS/CdS:SnS2 superlattice nanowires are very promising potential candidates in nanoscale electronic and optoelectronic devices.

High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10⁷ A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.

Active Adoption of Void Formation in Metal-Oxide for All Transparent Super-Performing Photodetectors

Could ‘defect-considered’ void formation in metal-oxide be actively used? Is it possible to realize stable void formation in a metal-oxide layer, beyond unexpected observations, for functional utilization? Herein we demonstrate the effective tailoring of void formation of NiO for ultra-sensitive UV photodetection. NiO was formed onto pre-sputtered ZnO for a large size and spontaneously formed abrupt p-NiO/n-ZnO heterojunction device. To form voids at an interface, rapid thermal process was performed, resulting in highly visible light transparency (85–95%). This heterojunction provides extremely low saturation current (<0.1 nA) with an extraordinary rectifying ratio value of over 3000 and works well without any additional metal electrodes. Under UV illumination, we can observe the fast photoresponse time (10 ms) along with the highest possible responsivity (1.8 A W⁻¹) and excellent detectivity (2 × 10¹³ Jones) due to the existence of an intrinsic-void layer at the interface. We consider this as the first report on metal-oxide-based void formation (Kirkendall effect) for effective photoelectric device applications. We propose that the active adoption of ‘defect-considered’ Kirkendall-voids will open up a new era for metal-oxide based photoelectric devices.

Present perspectives of broadband photodetectors based on nanobelts, nanoribbons, nanosheets and the emerging 2D materials

Recent research on photodetectors has been mainly focused on nanostructured materials that form the building blocks of device fabrication. The selection of a suitable material with well-defined properties forms the key issue for the fabrication of photodetectors that cover different ranges of the electromagnetic spectrum. In this review, the latest progress in light detection using nanobelts, nanoribbons, nanosheets and the emerging two-dimensional (2D) materials is reviewed. Particular emphasis is placed on the detection of light by the hybrid structures of the mentioned nanostructured materials in order to enhance the efficiency of the light-matter interaction. The booming research area of black phosphorus based photo-detection is also reviewed. This review provides an overview of basic concepts and new directions towards photodetectors, and highlights potential for the future development of high performance broadband photodetectors.

Fabrication of a Functionally Graded Copper-Zinc Sulfide Phosphor

Functionally graded materials (FGMs) are compositionally gradient materials. They can achieve the controlled distribution of the desired characteristics within the same bulk material. We describe a functionally graded (FG) metal-phosphor adapting the concept of the FGM; copper (Cu) is selected as a metal and Cu- and Cl-doped ZnS (ZnS:Cu,Cl) is selected as a phosphor and FG [Cu]-[ZnS:Cu,Cl] is fabricated by a very simple powder process. The FG [Cu]-[ZnS:Cu,Cl] reveals a dual-structured functional material composed of dense Cu and porous ZnS:Cu,Cl, which is completely combined through six graded mediating layers. The photoluminescence (PL) of FG [Cu]-[ZnS:Cu,Cl] is insensitive to temperature change. FG [Cu]-[ZnS:Cu,Cl] also exhibits diode characteristics and photo reactivity for 365 nm -UV light. Our FG metal-phosphor concept can pave the way to simplified manufacturing of low-cost and can be applied to various electronic devices.

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

Ultraviolet/visible photodetectors with ultrafast, high photosensitivity based on 1D ZnS/CdS heterostructures

One-dimensional (1D) semiconducting heterostructures have been widely studied for optoelectronics applications because of their unique geometry and attractive physical properties. In this study, we successfully synthesized 1D ZnS/CdS heterostructures, which can be used to fabricate high performance ultraviolet/visible photodetectors. Due to the separation of photo-generated electron-hole pairs, the resultant photodetector showed excellent photoresponse properties, including ultrahigh Ion/Ioff ratios (up to 10(5)) and specific detectivity (2.23 × 10(14) Jones), relatively fast response speed (5 ms), good stability and reproducibility. Moreover, the as-fabricated flexible photodetectors showed great mechanical stability under different bending conditions. Our results revealed the possibility of 1D ZnS/CdS heterostructures for application in the detection of UV and visible light. The main advantages of the heterostructures have great potential application for future optoelectronic devices.

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

Flexible self-powered sensing is urgently needed for wearable, portable, sustainable, maintenance-free and long-term applications. Here, we developed a flexible and self-powered GaN membrane-based ultraviolet (UV) photoswitch with high on/off ratio and excellent sensitivity. Even without any power supply, the driving force of UV photogenerated carriers can be well boosted by the combination of both built-in electric field and piezoelectric polarization field. The asymmetric metal-semiconductor-metal structure has been elaborately utilized to enhance the carrier separation and transport for highly sensitive UV photoresponse. Its UV on/off ratio and detection sensitivity reach to 4.67 × 10(5) and 1.78 × 10(12) cm·Hz(0.5) W(1-), respectively. Due to its excellent mechanical flexibility, the piezoelectric polarization field in GaN membrane can be easily tuned/controlled based on piezo-phototronic effect. Under 1% strain, a stronger and broader depletion region can be obtained to further enhance UV on/off ratio up to 154%. As a result, our research can not only provide a deep understanding of local electric field effects on self-powered optoelectronic detection, but also promote the development of self-powered flexible optoelectronic devices and integrated systems.

In situ fabrication of highly crystalline CdS decorated Bi2S3 nanowires (nano-heterostructure) for visible light photocatalyst application

Herein, we have demonstrated the in situ synthesis of the orthorhombic Bi₂S₃ nanowires decorated with hexagonal CdS nanoparticles by facile solvothermal method. The heterostructures have been used as photocatalyst for solar hydrogen production.

A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition

A novel flexible broad band UV-vis-NIR SnS photodetector with high photosensitivity and fast response time for scientific and industrial applications.

Ternary In2S3/In2O3 heterostructures and their cathodoluminescence

Three-dimensional In₂S₃/In₂O₃ heterostructures are obtained through a CVD process. The heterostructures have a broad emission band covering the whole visible range, which holds a promise in photocatalytic applications.

Core-double shell ZnO/ZnS@Co3O4 heterostructure as high performance pseudocapacitor

ZnO/ZnS@Co₃O₄ pseudocapacitor with high specific capacitance and energy density.

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors

A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent selectivity to ultralow UV light intensities. This is a significant step toward the integration of high-performance UV photodetectors in wearable devices.

High-performance ultraviolet photodetectors based on solution-grown ZnS nanobelts sandwiched between graphene layers

Ultraviolet (UV) light photodetectors constructed from solely inorganic semiconductors still remain unsatisfactory because of their low electrical performances. To overcome this limitation, the hybridization is one of the key approaches that have been recently adopted to enhance the photocurrent. High-performance UV photodetectors showing stable on-off switching and excellent spectral selectivity have been fabricated based on the hybrid structure of solution-grown ZnS nanobelts and CVD-grown graphene. Sandwiched structures and multilayer stacking strategies have been applied to expand effective junction between graphene and photoactive ZnS nanobelts. A multiply sandwich-structured photodetector of graphene/ZnS has shown a photocurrent of 0.115 mA under illumination of 1.2 mWcm(-2) in air at a bias of 1.0 V, which is higher 10(7) times than literature values. The multiple-sandwich structure of UV-light sensors with graphene having high conductivity, flexibility, and impermeability is suggested to be beneficial for the facile fabrication of UV photodetectors with extremely efficient performances.

Hierarchical Assembly of SnO2/ZnO Nanostructures for Enhanced Photocatalytic Performance

SnO₂/ZnO hierarchical heterostructures have been successfully synthesized by combining electrospinning technique and hydrothermal method. Various morphologies of the secondary ZnO nanostructures including nanorods (NRs) and nanosheets (NSs) can be tailored by adding surfactants. Photocatalytic performance of the heterostructures was investigated and obvious enhancement was demonstrated in degradation of the organic pollutant, compared to the primary SnO₂-based nanofibers (NFs) and bare ZnO. Furthermore, it was found that the H₂ evolution from water splitting was achieved by photocatalysis of heterostructured nanocomposites after sulfurization treatment. This synthetic methodology described herein promises to be an effective approach for fabricating variety of nanostructures for enhanced catalytic applications. The heterostructured nanomaterials have considerable potential to address the environmental and energy issues via degradation of pollutant and generation of clean H₂ fuel.

Fabrication of Ultrathin Bi2 S3 Nanosheets for High-Performance, Flexible, Visible-NIR Photodetectors

Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.

Light-controlling, flexible and transparent ethanol gas sensor based on ZnO nanoparticles for wearable devices

In recent years, owing to the significant applications of health monitoring, wearable electronic devices such as smart watches, smart glass and wearable cameras have been growing rapidly. Gas sensor is an important part of wearable electronic devices for detecting pollutant, toxic, and combustible gases. However, in order to apply to wearable electronic devices, the gas sensor needs flexible, transparent, and working at room temperature, which are not available for traditional gas sensors. Here, we for the first time fabricate a light-controlling, flexible, transparent, and working at room-temperature ethanol gas sensor by using commercial ZnO nanoparticles. The fabricated sensor not only exhibits fast and excellent photoresponse, but also shows high sensing response to ethanol under UV irradiation. Meanwhile, its transmittance exceeds 62% in the visible spectral range, and the sensing performance keeps the same even bent it at a curvature angle of 90(o). Additionally, using commercial ZnO nanoparticles provides a facile and low-cost route to fabricate wearable electronic devices.

Tailored Electrospinning of WO₃ Nanobelts as Efficient Ultraviolet Photodetectors with Photo-Dark Current Ratios up to 1000

In this work, polycrystalline WO3 nanobelts were fabricated via an electrospinning process combined with subsequent air calcination. The resultant products were characterized by X-ray diffraction, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy in regard to the structures. It has been found that the applied voltage during the electrospinning process played the determined role in the formation of the WO3 nanobelts, allowing the controlled growth of the nanobelts. The ultraviolet (UV) photodetector assembled by an individual WO3 nanobelt exhibits a high sensitivity and a precise selectivity to the different wavelength lights, with a very low dark current and typical photo-dark current ratio up to 1000, which was the highest for any WO3 photodectectors ever reported. This work could not only push forward the facile preparation of WO3 nanobelts but also represent, for the first time, the possibility that the polycrystalline WO3 nanobelts could be a promising building block for the highly efficient UV photodetectors.

In situ fabrication and optoelectronic analysis of axial CdS/p-Si nanowire heterojunctions in a high-resolution transmission electron microscope

A high-precision technique was utilized to construct and characterize axial nanowire heterojunctions inside a high-resolution transmission electron microscope (HRTEM). By an in-tandem technique using an ultra-sharp tungsten probe as the nanomanipulator and an optical fiber as the optical waveguide the nanoscale CdS/p-Si axial nanowire junctions were fabricated, and in situ photocurrents from them were successfully measured. Compared to a single constituting nanowire, the CdS/p-Si axial nanowire junctions possess a photocurrent saturation effect, which protects them from damage under high voltages. Furthermore, a set of experiments reveals the clear relationship between the saturation photocurrent values and the incident light intensities. The applied technique is expected to be valuable for bottom-up nanodevice fabrications, and the regarded photocurrent saturation feature may solve the Joule heating-induced failure problem in nanowire optoelectronic devices caused by a fluctuating bias.

Ultraviolet photodetectors with high photosensitivity based on type-II ZnS/SnO2 core/shell heterostructured ribbons

Semiconducting heterostructures with type-II band structure have attracted much attention due to their novel physical properties and wide applications in optoelectronics. Herein, we report, for the first time, a controlled synthesis of type-II ZnS/SnO2 heterostructured ribbon composed of SnO2 nanoparticles that uniformly cover the surface of ZnS ribbon via a simple and versatile thermal evaporation approach. Structural analysis indicated that the majority of SnO2 nanoparticles have an equivalent zone axis, i.e., <-313> of rutile SnO2, which is perpendicular to ±(2-1-10) facets (top/down surfaces) of ZnS ribbon. For those SnO2 nanoparticles decorated on ±(01-10) facets (side surfaces) of ZnS ribbon, an epitaxial relationship of (01-10)ZnO//(020)SnO2 and [2-1-10]ZnO//[001]SnO2 was identified. To explore their electronic and optoelectronic properties, we constructed field-effect transistors from as-prepared new heterostructures, which exhibited an n-type characteristic with an on/off ratio of ∼10(3) and a fast carrier mobility of ∼33.2 cm2 V(-1) s(-1). Owing to the spatial separation of photogenerated electron-hole pairs from type-II band alignment together with the good contacts between electrodes and ribbon, the resultant photodetector showed excellent photoresponse properties, including large photocurrent, high sensitivity (external quantum efficiency as high as ∼2.4×10(7)%), good stability and reproducibility, and relatively fast response speed. Our results suggest great potential of ZnS/SnO2 heterostructures for efficient UV light sensing, and, more importantly, signify the advantages of type-II semiconducting heterostructures for construction of high-performance nano-photodetectors.

Low temperature solution processed ZnO/CuO heterojunction photocatalyst for visible light induced photo-degradation of organic pollutants

Morphology controlled hierarchical ZnO/CuO architecture was obtained on both flexible and rigid substrates, which exhibited excellent photocatalytic performance by virtue of favourable heterojunction formation at nanostructure interfaces.

A self-powered ultraviolet photodetector based on solution-processed p-NiO/n-ZnO nanorod array heterojunction

A self-powered and rapid-response UV photodetector with p-NiO/ZnO-nanorod array heterojunction was developed. Under a small forward bias of 0.1 mV, the UV photosensitivity exceeded the value of ~10⁵ previously reported.

Enhanced photocurrent of a ZnO nanorod array sensitized with graphene quantum dots

GQDs have a remarkable sensitization effect on the photocurrent of ZNRA, which is due to the interfacial charge transfer.

Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.

Flexible visible-light photodetectors with broad photoresponse based on ZrS3 nanobelt films

Two new flexible visible-light photodetectors based on ZrS3 nanobelts films are fabricated on a polypropylene (PP) film and printing paper, respectively, by an adhesive-tape transfer method, and their light-induced electric properties are investigated in detail. The devices demonstrate a remarkable response to 405 to 780 nm light, a photocurrent that depends on the optical power and light wavelength, and an excellent photoswitching effect and stability. This implies that ZrS3 nanobelts are prospective candidates for high-performance nanoscale optoelectronic devices that may be practically applied in photodetection of visible to near infrared light. The facile fabrication method is extendable to flexible nanodevices with different nanostructures.

Ultrahigh responsivity and external quantum efficiency of an ultraviolet-light photodetector based on a single VO₂ microwire

We demonstrated a single microwire photodetector first made using a VO2 microwire that exhibted high responsivity (Rλ) and external quantum efficiency (EQE) under varying light intensities. The VO2 nanowires/microwires were grown and attached on the surface of the SiO2/Si(100) substrate. The SiO2 layer can produce extremely low densities of long VO2 microwires. An individual VO2 microwire was bonded onto the ends using silver paste to fabricate a photodetector. The high-resolution transmission electron microscopy image indicates that the nanowires grew along the [100] axis as a single crystal. The critical parameters, such as Rλ, EQE, and detectivity, are extremely high, 7069 A W(-1), 2.4 × 10(10)%, and 1.5 × 10(14) Jones, respectively, under a bias of 4 V and an illumination intensity of 1 μW cm(-2). The asymmetry in the I-V curves results from the unequal barrier heights at the two contacts. The photodetector has a linear I-V curve with a low dark current while a nonlinear curves was observed under varing light intensities. The highly efficient hole-trapping effect contributed to the high responsivity and external quantum efficiency in the metal-oxide nanomaterial photodetector. The responsivity of VO2 photodetector is 6 and 4 orders higher than that of graphene (or MoS2) and GaS, respectively. The findings demonstrate that VO2 nanowire/microwire is highly suitable for realizing a high-performance photodetector on a SiO2/Si substrate.

Coating and enhanced photocurrent of vertically aligned zinc oxide nanowire arrays with metal sulfide materials

Hybrid nanostructures combining zinc oxide (ZnO) and a metal sulfide (MS) semiconductor are highly important for energy-related applications. Controlled filling and coating of vertically aligned ZnO nanowire arrays with different MS materials was achieved via the thermal decomposition approach of single-source precursors in the gas phase by using a simple atmospheric-pressure chemical vapor deposition system. Using different precursors allowed us to synthesize multicomponent structures such as nanowires coated with alloy shell or multishell structures. Herein, we present the synthesis and structural characterization of the different structures, as well as an electrochemical characterization and a photovoltaic response of the ZnO-CdS system, in which the resulting photocurrent upon illumination indicates charge separation at the interface.