Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping

Strain-tunable CO2 storage by black phosphorene and α-PC from combined first principles and molecular dynamics studies

2D layered materials are intrinsically promising mediums for gas adsorption because of their recognized large surface areas and structural stability. Their gas adsorption and desorption processes are usually controlled by changing the temperature or applying high voltage. In this work, though combined density functional theory (DFT) calculations and molecular dynamics (MD) simulations, we propose that external tensile strain can also regulate the gas binding energetics and kinetics using two representative 2D materials, monolayer black phosphorene (BP) and black phosphorus carbide (α-PC), as showpiece models. The DFT results clearly show that CO2 can be physically adsorbed on BP/α-PC with moderate binding strength, which facilities the adsorption and desorption processes. For BP, strain increases the storage capacity from 10.90 ± 0.28 mmol g-1 (strain free) to 12.67 ± 0.33 (30% strain) with a tunability of 16.2%. α-PC, however, has a smaller strain response; its CO2 storage capacity increases from 15.98 ± 0.34 mmol g-1 (strain free) to 17.15 ± 0.36 mmol g-1 for a 10% strained state. DFT calculations reveal that CO2 is an electron acceptor for both BP and α-PC; however, it hardly regulates their electronic structures. The theoretical investigations suggest that BP and α-PC have great potential as gas capture and storage materials. The strain controlling approach can be generalized for the design of tunable nano-devices by external mechanical stimuli.

Donor–acceptor type black phosphorus nanosheets covalently functionalized with a conjugated polymer for laser protection

Donor–acceptor type black phosphorus nanosheets covalently functionalized with a conjugated polymer (PDBT-BP) exhibits excellent nonlinear optical and optical limiting performance.

An ultra-sensitive and selective nitrogen dioxide sensor based on a novel P2C2 monolayer from a theoretical perspective

The sensing properties of an α phase black phosphorus carbide (P2C2) monolayer for the adsorption of CO2, H2, H2O, N2, H2S, NH3, O2 and NO2 gases are theoretically investigated using first-principles calculations. We calculate the adsorption energy, equilibrium distance, Mulliken charge transfer, electron localization function, and work function to explore whether P2C2 is suitable for detecting NO2 gas. The results demonstrate that the P2C2 monolayer is highly sensitive and selective to NO2 gas molecules with robust adsorption energy and superior charge transfer due to the existence of strong orbital hybridization between the NO2 molecule and monolayer P2C2. In addition, the results of the work function calculations indicate that field effect transistor type NO2 gas sensors based on P2C2 monolayers are also feasible. Furthermore, the current-voltage curves reveal that the adsorption of NO2 can greatly modify the resistance of the P2C2 monolayer. Our results show that gas sensors based on P2C2 monolayers could be better than those based on black phosphorene (BP) for detecting NO2 molecules in an air mixture. In addition, the recovery time of the P2C2 sensor at T = 300 K was estimated to be short (and even shorter at higher temperatures) for NO2 which satisfies the demands for sustainable use.

Ultrasensitive 2D/3D Heterojunction Multicolor Photodetectors: A Synergy of Laterally and Vertically Aligned 2D Layered Materials

In this work, a p-type 2D SnS nanofilm containing both laterally and vertically aligned components was successfully deposited on an n-type Si substrate through pulsed-laser deposition. Energy band analysis demonstrates a typical type-II band alignment between SnS and Si, which is beneficial to the separation of photogenerated carriers. The as-fabricated p-SnS/n-Si heterojunction photodetector exhibits multicolor photoresponse from ultraviolet to near-infrared (370-1064 nm). Importantly, the device manifests a high responsivity of 273 A/W, a large external quantum efficiency of 4.2 × 10⁴%, and an outstanding detectivity of 7× 10¹³ Jones (1 Jones = 1 cm Hz^1/2 W^-1), which far outperforms state-of-the-art 2D/3D heterojunction photodetectors incorporating either laterally or vertically aligned 2D layered materials (2DLMs). The splendid performance is ascribed to lateral SnS's dangling-bond-free interface induced efficient carrier separation, vertical SnS's high-speed carrier transport, and collision ionization induced carrier multiplication. In sum, the current work depicts a unique landscape for revolutionary design and advancement of 2DLM-based heterojunction photodetectors.

Organic molecular passivation of phosphorene: An aptamer-based biosensing platform

Black phosphorus (BP), also known as phosphorene (PP), is a fascinating two-dimensional (2D) material with extraordinary anisotropic mechanical, electronic and optoelectronic properties. However, PP is sensitive to oxygen and moisture and is completely degenerated by oxygen and humid air within 12 h, which limits its applications. Here, we coat PP with hexamethylenediamine (HMA), which allows the coated PP to maintain its original form in aqueous solution for over one month. The stable PP is dotted with gold nanoparticles to facilitate binding to a 3,3'4,4'-polychlorinated biphenyl (PCB77) aptamer (ap) as a biosensor. The aptamer biosensor based on gold nanoparticle-dotted PP nanocomposites (PP-AuNPs) exhibits superior analytical performance, and its sensitivity (391.1 μA cm^-2) is approximately three times higher than that of an AuNP-based sensor (AuNP-Ap/Au electrode, 147.2 μA cm^-2). This biosensor has a low detection limit (DL) of 33 pg L^-1 toward PCB77 with a dynamic response range toward PCB77 from 100 pg L^-1 to 10 μg L^-1. This research opens up avenues for the use of PP to make multiplexed diagnosis platforms in aqueous systems.

Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface

The heteroepitaxial growth of fullerene (C₆₀) on single-crystal black phosphorus (BP) has been studied using low-energy electron diffraction, X-ray and ultraviolet photoelectron spectroscopy, and density functional theory simulation. The occupied orbital features from C₆₀ observed in the photoelectron spectra for C₆₀/BP interface are slightly broadened at higher coverages of C₆₀ and exhibit no direct evidence of hybridization, demonstrating that the C₆₀/BP interaction is physisorption. Oxygen exposure of interface leads to obvious oxidation of BP in which C₆₀ bridges the large electron-transfer barrier from BP to oxygen and plays an important role for the production of O₂^- and oxidation of BP. Our findings suggest that C₆₀ does not form an ideal protection layer as the other n-type semiconductors. With the assistance of density functional theory calculations, the oxidized phosphorus at the interface prevents further charge transfer from BP to C₆₀.

Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics

Many, black phosphorus (BP) based field-effect transistors, homojunctions, and vertical van der Waals structures have been developed for optoelectronic applications, with few studies being conducted on exploring the potential of their naturally formed heterojunctions. Here, we report a novel thickness-modulated, gate-tunable BP heterojunction phototransistor for multiple purposes and high performance optoelectronics. Despite its thickness of less than 5 nm, the device, whose fabrication spares the need for split-gate or chemical doping or vertical stacking requirements, achieves an excellent photoresponsivity of 383 A W^-1 at 1550 nm under zero gate bias, which is among the best photoresponse performance of all-BP-based photodetectors in this spectral range. Furthermore, it exhibits a shot-noise-limited noise equivalent power (NEP_shot) of less than 10^-2 pW Hz^-1/2, making it very promising for ultra-low power detection. Additionally, owing to the heterojunction-induced built-in electric field, the device can be readily used for infrared photovoltaic devices in the absence of source-drain bias (V_d), a feature that is distinctively superior to traditional phototransistors. The multifunctionality demonstrated in our BP heterojunction transistor paves the way towards realizing tunable improved performance optoelectronics based on 2D materials platform.

A Voltage-Boosting Strategy Enabling a Low-Frequency, Flexible Electromagnetic Wave Absorption Device

Nowadays, low-frequency electromagnetic interference (<2.0 GHz) remains a key core issue that plagues the effective attenuation performance of conventional absorption devices prepared via the component-morphology method (Strategy I). According to theoretical calculations, one fundamental solution is to develop a material that possesses a high ε' but lower ε″. Thus, it is attempted to control the dielectric values via applying an external electrical field, which inducts changes in the macrostructure toward a performance improvement (Strategy II). A sandwich-structured flexible electronic absorption device is designed using a carbon film electrode to conduct an external current. Simultaneously, an absorption layer that is highly responsive to an external voltage is selected via Strategy I. Relying on the synergistic effects from Strategies I and II, this device demonstrates an absorption value of more than 85% at 1.5-2.0 GHz with an applied voltage of 16 V while reducing the thickness to ≈5 mm. In addition, the device also shows a good absorption property at 25-150 °C. The method of utilizing an external voltage to break the intrinsic dielectric feature by modifying a traditional electronic absorption device is demonstrated for the first time and has great significance in solving the low-frequency electromagnetic interference issue.

A Black Phosphorus Carbide Infrared Phototransistor

Photodetectors with broadband detection capability are desirable for sensing applications in the coming age of the internet-of-things. Although 2D layered materials (2DMs) have been actively pursued due to their unique optical properties, by far only graphene and black arsenic phosphorus have the wide absorption spectrum that covers most molecular vibrational fingerprints. However, their reported responsivity and response time are falling short of the requirements needed for enabling simultaneous weak-signal and high-speed detections. Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a tunable responsivity and response time at an excitation wavelength of 2004 nm is demonstrated. The b-PC phototransistor achieves a peak responsivity of 2163 A W^-1 and a shot noise equivalent power of 1.3 fW Hz^-1/2 at 2004 nm. In addition, it is shown that a response time of 0.7 ns is tunable by the gating effect, which renders it versatile for high-speed applications. Under the same signal strength (i.e., excitation power), its performance in responsivity and detectivity in room temperature condition is currently ahead of recent top-performing photodetectors based on 2DMs that operate with a small bias voltage of 0.2 V.

Superconductivity in two-dimensional phosphorus carbide (β0-PC)

The out-of-plane P_z vibrational modes in two-dimensional phosphorus carbide lead to intrinsic superconductivity with a Kohn anomaly.

Formation of n–n type heterojunction-based tin organic–inorganic hybrid perovskite composites and their functions in the photocatalytic field

n–n type heterojunction MASnI₃/TiO₂ composites before and after calcination form different ohmic contact interfaces and follow different mechanisms.

Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power

The narrow band gap property of black phosphorus (BP) that bridges the energy gap between graphene and transition metal dichalcogenides holds great promise for enabling broadband optical detection from ultraviolet to infrared wavelengths. Despite its rich potential as an intriguing building block for optoelectronic applications, however, very little progress has been made in realizing BP-based infrared photodetectors. Here, we demonstrate a high sensitivity BP phototransistor that operates at a short-wavelength infrared (SWIR) of 2 μm under room temperature. Excellent tunability of responsivity and photoconductive gain are acquired by utilizing the electrostatic gating effect, which controls the dominant photocurrent generation mechanism via adjusting the band alignment in the phototransistor. Under a nanowatt-level illumination, a peak responsivity of 8.5 A/W and a low noise equivalent power (NEP) of less than 1 pW/Hz^1/2 are achieved at a small operating source-drain bias of -1 V. Our phototransistor demonstrates a simple and effective approach to continuously tune the detection capability of BP photodetectors, paving the way to exploit BP to numerous low-light-level detection applications such as biomolecular sensing, meteorological data collection, and thermal imaging.