‘Old Chemistries’ for new applications: Perspectives for development of precursors for MOCVD and ALD applications

PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases

A bottom-up approach starting with the development of new Hf precursors for plasma-enhanced atomic layer deposition (PEALD) processes for HfO₂ followed by in situ thin-film surface characterization of HfO₂ upon exposure to reactive gases via near-ambient-pressure X-ray photoelectron spectroscopy (NAP-XPS) is reported. The stability of thin films under simulated operational conditions is assessed, and the successful implementation of HfO₂ dielectric layers in metal-insulator-semiconductor (MIS) capacitors is demonstrated. Among the series of newly synthesized mono-guanidinato-tris-dialkyl-amido class of Hf precursors, one of them, namely, [Hf{η²-(ⁱPrN)₂CNEtMe}(NEtMe)₃], was representatively utilized with oxygen plasma, resulting in a highly promising low-temperature PEALD process at 60 °C. The new precursors were synthesized in the multigram scale and thoroughly characterized by thermogravimetric analyses, revealing high and tunable volatility reflected by appreciable vapor pressures and accompanied by thermal stability. Typical ALD growth characteristics in terms of linearity, saturation, and a broad ALD window with constant growth of 1.06 Å cycle^-1 in the temperature range of 60-240 °C render this process very promising for fabricating high-purity smooth HfO₂ layers. For the first time, NAP-XPS surface studies on selected HfO₂ layers are reported upon exposure to reactive H₂, O₂, and H₂O atmospheres at temperatures of up to 500 °C revealing remarkable stability against degradation. This can be attributed to the absence of surface defects and vacancies. On the basis of these promising results, PEALD-grown HfO₂ films were used as dielectric layers in the MIS capacitor device fabrication exhibiting leakage current densities less than 10^-7 A cm^-2 at 2 MV cm^-1 and permittivities of up to 13.9 without postannealing.

Luminescent Nd2S3 thin films: a new chemical vapour deposition route towards rare-earth sulphides

Neodymium sulphide (Nd2S3) belongs to the exciting class of rare earth sulphides (RES) and is projected to have a serious potential in a wide spectrum of application either in pure form or as dopant. We demonstrate a facile and first growth of Nd2S3 thin films via metal-organic chemical vapour deposition (MOCVD) at moderate process conditions using two new Nd precursors, namely tris(N,N'-diisopropyl-2-dimethylamido-guanidinato)Nd(iii) and tris(N,N'-diisopropyl-acetamidinato)Nd(iii). The promising thermal properties and suitable reactivity of both Nd precursors towards elemental sulphur enabled the formation of high purity γ-Nd2S3. While the process temperature for film growth ranged from 400 °C to 600 °C, the films were crystalline above 500 °C. We also demonstrate that the as-deposited γ-Nd2S3 are luminescent, with the optical bandgap ranging from 2.3 eV to 2.5 eV. The process circumvents post-deposition treatments such as sulfurisation to fabricate the desired Nd2S3, which paves the way for large scale synthesis and also opens up new avenues for exploring the potential of this class of materials with properties for functional applications.

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO2-Based Thin-Film Transistor Devices

A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)₄] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)₄] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 Å cycle^-1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 10⁷ and field-effect mobility of μ_FE ≈ 12 cm² V^-1 s^-1 for the as-deposited thin films deposited at such low temperatures.

Formation and structural characterization of a potassium amidino-guanidinate

The first potassium amidino-guanidinate complex, catena-poly[[bis-(μ-1-amidinato-N,N',N'',N'''-tetra-iso-propyl-guanidinato-κ5 N 1:N 1,N 2:N 2,N 4)dipotassium]-μ-1,2-di-meth-oxy-ethane-κ2 O:O'], [K2(C14H32N4)2(C4H10O2)] n or [{ i PrN= CHN( i Pr)N(N i Pr)2K}2(μ-DME)] n where DME is 1,2-di-meth-oxy-ethane, has been synthesized and structurally characterized. The title compound was isolated in 76% yield from a reaction of N,N'-diiso-propyl-carbodi-imide with potassium hydride in DME. The single-crystal X-ray structure determination of the title compound revealed a polymeric chain structure comprising cage-like dimeric units, with the amidino-guanidinate ligand displaying a mixed σ-/π-coordination mode.

Synthesis, characterisation and thermal properties of Sn(ii) pyrrolide complexes

SnO is a rare example of a stable p-type semiconductor material. Here, we describe the synthesis and characterisation of a family of Sn(ii) pyrrolide complexes for future application in the MOCVD and ALD of tin containing thin films. Reaction of the Sn(ii) amide complex, [{(Me3Si)2N}2Sn], with the N,N-bidentate pyrrole pro-ligand, L1H, forms the hetero- and homoleptic complexes [{L1}Sn{N(SiMe3)2}] (1) and [{L1}2Sn] (2), respectively, bearing the 2-dimethylaminomethyl-pyrrolide ligand (L1). Reaction of [{(Me3Si)2N)}2Sn] with the pyrrole-aldimine pro-ligands, L2H-L7H, results in the exclusive formation of the homoleptic bis-pyrrolide complexes [{L2-7}2Sn] (3-8). All complexes have been characterised by elemental analysis and NMR spectroscopy, and the molecular structures of complexes 1-5 and 8 are determined by single crystal X-ray diffraction. TG analysis and isothermal TG analysis have been used to evaluate the potential utility of these systems as MOCVD and ALD precursors.

Controllable vapor phase fabrication of F:Mn3O4thin films functionalized with Ag and TiO2

The first example of vapor phase fabrication of Mn₃O₄(hausmannite) thin films chemically modified with fluorine and functionalized with Ag and TiO₂, resulting in high purity composites with an intimate constituent contact.

Molecular Engineering of MnII Diamine Diketonate Precursors for the Vapor Deposition of Manganese Oxide Nanostructures

Molecular engineering of manganese(II) diamine diketonate precursors is a key issue for their use in the vapor deposition of manganese oxide materials. Herein, two closely related β-diketonate diamine Mn^II adducts with different fluorine contents in the diketonate ligands are examined. The target compounds were synthesized by a simple procedure and, for the first time, thoroughly characterized by a joint experimental-theoretical approach, to understand the influence of the ligand on their structures, electronic properties, thermal behavior, and reactivity. The target compounds are monomeric and exhibit a pseudo-octahedral coordination of the Mn^II centers, with differences in their structure and fragmentation processes related to the ligand nature. Both complexes can be readily vaporized without premature side decompositions, a favorable feature for their use as precursors for chemical vapor deposition (CVD) or atomic layer deposition applications. Preliminary CVD experiments at moderate growth temperatures enabled the fabrication of high-purity, single-phase Mn₃ O₄ nanosystems with tailored morphology, which hold great promise for various technological applications.

Synthesis and crystal structures of two new tin bis-(carboranylamidinate) complexes

Reaction of 2 equiv. of the lithium carboranylamidinate Li[o-(C2H10B10)C(NCy)(NHCy)] with SnCl2 in THF afforded the stannylene compound bis(N,N'-dicyclohexylamidinatocarboranate)tin(II), SnII[o-(C2H10B10)C(NCy)(NHCy)]2 (1). A similar reaction of SnCl4 with 2 equiv. of Li[o-(C2H10B10)C(N i Pr)(NH i Pr)] unexpectedly afforded the known solvated penta-chlorido-stannate(IV) salt [Li(THF)4][SnCl5(THF)] as the main reaction product. Small amounts of the new chlorido-tin(IV) bis-(carboranylamidinate) bis(N,N'-diiso-propylamidinatocarboranate)chloridotin(IV), SnIVCl[o-(C2H10B10)C(N i Pr)(NH i Pr)][o-(C2H10B10)C(N i Pr)2] (2), were isolated as a by-product. Single-crystal X-ray structure analysis revealed a κC,κN-chelating coordination of the carboranylamidinate ligands in both 1 and 2. The Sn atom in 1 adopts a pseudo-trigonal-bipyramidal coordination under participation of a stereoactive lone pair. In 2, a trigonal-bipyramidal coordination of Sn is completed by a chlorido ligand.

Crystal and mol-ecular structures of two silver(I) amidinates, including an unexpected co-crystal with a lithium amidinate

The silver(I) amidinates bis-[μ-N1,N2-bis-(propan-2-yl)benzamidinato-κ2N1:N2]disilver(I), [Ag2(C13H19N2)2] or [Ag{PhC(N i Pr)2}]2 (1), and bis-(μ-N1,N2-di-cyclohexyl-3-cyclo-propyl-propynamidinato-κ2N1:N2)disilver(I), [Ag2(C18H27N2)2] or [Ag{cyclo-C3H5-C≡C-C(NCy)2}]2 (2a), exist as centrosymmetric dimers with a planar Ag2N4C2 ring and a common linear coordination of the metal atoms in the crystalline state. Moiety 2a forms a co-crystal with the related lithium amidinate, namely bis-(μ-N1,N2-di-cyclo-hexyl-3-cyclo-propyl-propynamidinato-κ2N1:N2)disilver(I) bis-(μ-N1,N2-di-cyclo-hexyl-3-cyclo-propyl-propynamidinato-κ3N1,N2:N1)bis-(tetra-hydro-furan-κO)lithium(I) toluene monosolvate, [Ag2(C18H27N2)2][Li2(C18H27N2)2(C4H8O)2]·C7H8 or [Ag{cyclo-C3H5-C≡C-C(NCy)2}]2[Li{cyclo-C3H5-C≡C-C(NCy)2}(THF)]2·C7H8, composed as 2a × 2b × toluene. The lithium moiety 2b features a typical ladder-type dimeric structure with a distorted tetra-hedral coordination of the metal atoms. In the silver(I) derivatives 1 and 2a, the amidinate ligand adopts a μ-κN:κN' coordination, while it is a μ-κN:κN:κN'-coordination in the case of lithium derivative 2b.

Formation and structure of the first metal complexes comprising amidino-guanidinate ligands

The first metal complexes comprising amidino-guanidinate ligands have been prepared and structurally characterized, namely bis-[μ-N,N',N'',N'''-tetraisopropyl-1-(1-butyl-amidinato)guanidinato-κ3N1,N2:N2]bis-[(tetra-hydro-furan)lithium], [Li2(C18H37N4)2(C4H8O)2], (2), and [bis-(tetra-hydro-furan)-lithium]-di-μ-chlorido-{(N,N'-di-cyclo-hexyl-1-butyl-amidinato-κ2N1,N2)[N,N',N'',N'''-tetra-cyclo-hexyl-1-(1-butyl-amidinato)guanidinato-κ2N1,N2]holmate(III)}, [HoLiCl2(C4H8O)2(C17H31N2)(C30H53N4)], (3). The novel lithium amidino-guanidinate precursors Li[ n BuC(=NR)(NR)C(NR)2] [1: R = Cy (cyclo-hex-yl), 2: R = i Pr) were obtained by treatment of N,N'-diorganocarbodi-imides, R-N=C=N-R (R = i Pr, Cy), with 0.5 equivalents of n-butyl-lithium under well-defined reaction conditions. An X-ray diffraction study of 2 revealed a ladder-type dimeric structure in the solid state. Reaction of anhydrous holmium(III) chloride with in situ-prepared 2 afforded the unexpected holmium 'ate' complex [ n BuC(=NCy)(NCy)C(NCy)2]Ho[ n BuC(NCy)2](μ-Cl)2Li(THF)2 (3) in 71% yield. An X-ray crystal structure determination of 3 showed that this complex contains both an amidinate ligand and the new amidino-guanidinate ligand.

Crystal structures of two ytterbium(III) complexes comprising alkynylamidinate ligands

Two ytterbium(III) complexes comprising alkynylamidinate ligands, namely bis-(η5-cyclo-penta-dien-yl)(3-cyclo-propyl-N,N'-diiso-propyl-propynamidinato-κ2N,N')ytterbium(III), [Yb(C5H5)2(C12H19N2)] or Cp2Yb[( i Pr2N)2C-C≡C-c-C3H5] (1) and tris-(3-phenyl-N,N'-di-cyclo-hexyl-propynamidinato-κ2N,N')ytterbium(III), [Yb(C21H27N2)3] or Yb[(CyN)2C-C≡C-Ph]3 (Cy = cyclo-hex-yl) (2) have been synthesized and structurally characterized. Both complexes are monomers; for complex 2, the contribution to the scattering from highly disordered toluene solvent molecules in these voids was removed with the SQUEEZE routine [Spek (2015). Acta Cryst. C71, 9-18] in PLATON. The stated crystal data for Mr, μ etc. do not take these into account.

Crystal growth and structural remarks on malonate-based lanthanide coordination polymers

The synthesis, structural and thermal studies of several malonate-containing lanthanide(iii) complexes plus a structural overview of twenty-three known homometallic Ln(iii)-malonate systems are provided herein.

Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide

Molecular engineering of zinc ketoiminates leads to the optimisation of precursor properties in terms of volatiltiy, reactivity and thermal stability, highly relevant for water assisted ALD of ZnO.

Five different types of η8-cyclooctatetraenyl-lanthanide half-sandwich complexes from one ligand set, including a “giant neodymium wheel”

Using one ligand set, five different types of η⁸-cyclooctatetraenyl-lanthanide half-sandwich complexes, including a “giant neodymium wheel”, have been prepared and structurally characterized.

Thioether functionalised gallium and indium alkoxides in materials synthesis

Thermolysis of thioether functionalised metal alkoxides leads to the incorporation of sulphides in materials synthesized by CVD and hot-injection method.

Synthesis and catalytic activity of homoleptic lanthanide-tris(cyclopropylethinyl)amidinates

New unsolvated, homoleptic lanthanide(iii) tris(cyclopropylethinylamidinate) complexes of the type [c-C₃H₅–CC–C(NR)₂]₃Ln (R = ⁱPr, cyclohexyl; Ln = Nd, Sm, Ho) have been prepared and the crystal structure of the holmium derivative [c-C₃H₅–CC–C(NⁱPr)₂]₃Ho has been confirmed by X-ray diffraction.

A convenient and quantitative route to Sn(iv)–M [M = Ti(iv), Nb(v), Ta(v)] heterobimetallic precursors for dense mixed-metal oxide ceramics

Simplicity is beauty. Reactions of SnCl₄ with M(OR)_x yield novel heterobimetallics with simple addition formula.

Chemical vapour deposition of Ir-based coatings: chemistry, processes and applications

Iridium-based film precursor chemistry, nucleation and growth at CVD/ALD are reviewed with numerical characterization of the growth features in 3D objects.

Partially fluorinated oxo-alkoxide tungsten(vi) complexes as precursors for deposition of WOx nanomaterials

Volatile partially fluorinated tungsten(vi) oxo-alkoxides yield tungsten oxide nanorods upon chemical vapour deposition.