Role of the Exciton-Polariton in a Continuous-Wave Optically Pumped CsPbBr3 Perovskite Laser

Lateral Structured Phototransistor Based on Mesoscopic Graphene/Perovskite Heterojunctions

Due to their outstanding optical properties and superior charge carrier mobilities, organometal halide perovskites have been widely investigated in photodetection and solar cell areas. In perovskites photodetection devices, their high optical absorption and excellent quantum efficiency contribute to the responsivity, even the specific detectivity. In this work, we developed a lateral phototransistor based on mesoscopic graphene/perovskite heterojunctions. Graphene nanowall shows a porous structure, and the spaces between graphene nanowall are much appropriated for perovskite crystalline to mount in. Hot carriers are excited in perovskite, which is followed by the holes’ transfer to the graphene layer through the interfacial efficiently. Therefore, graphene plays the role of holes’ collecting material and carriers’ transporting channel. This charge transfer process is also verified by the luminescence spectra. We used the hybrid film to build phototransistor, which performed a high responsivity and specific detectivity of 2.0 × 10³ A/W and 7.2 × 10¹⁰ Jones, respectively. To understand the photoconductive mechanism, the perovskite’s passivation and the graphene photogating effect are proposed to contribute to the device’s performance. This study provides new routes for the application of perovskite film in photodetection.

Ultralow-Threshold Continuous-Wave Room-Temperature Crystal-Fiber/Nanoperovskite Hybrid Lasers for All-Optical Photonic Integration

Continuous-wave (CW) room-temperature (RT) laser operation with low energy consumption is an ultimate goal for electrically driven lasers. A monolithically integrated perovskite laser in a chip-level fiber scheme is ideal. However, because of the well-recognized air and thermal instabilities of perovskites, laser action in a perovskite has mostly been limited to either pulsed or cryogenic-temperature operations. Most CW laser operations at RT have had poor durability. Here, crystal fibers that have robust and high-heat-load nature are shown to be the key to enabling the first demonstration of ultralow-threshold CW RT laser action in a compact, monolithic, and inexpensive crystal fiber/nanoperovskite hybrid architecture that is directly pumped with a 405 nm diode laser. Purcell-enhanced light-matter coupling between the atomically smooth fiber microcavity and the perovskite nanocrystallites gain medium enables a high Q (≈1500) and a high β (0.31). This 762 nm laser outperforms previously reported structures with a record-low threshold of 132 nW and an optical-to-optical slope conversion efficiency of 2.93%, and it delivers a stable output for CW and RT operation. These results represent a significant advancement toward monolithic all-optical integration.

Highly In-Plane Polarization-Sensitive Photodetection in CsPbBr3 Single Crystal

The fully inorganic perovskite lead cesium bromide single crystal (CsPbBr₃ SC) is considered as an excellent candidate semiconductor for photodetectors because of its superior humidity resistance, thermal stability, and light stability compared with organic-inorganic hybrid perovskites as well as its photoelectric properties such as large light absorption coefficient and ultralong carrier migration distance. In this Letter, we utilize the inverse temperature solubility of CsPbBr₃ in ternary solvents to grow large-sized CsPbBr₃ SCs. By the use of the (101) plane, CsPbBr₃ SC-based photodetectors are fabricated, which exhibit excellent polarized light response characteristics. The photocurrent relies on the polarization angle in a sinusoidal fashion and shows strong anisotropic optoelectronic properties. The photodetection performance perpendicular to the y axis is significantly higher than that parallel to the y axis, and the dichroic ratio under 405 nm illumination at a bias voltage of 1 V reaches 2.65. The experimental results are consistent with the results of first-principles calculations.

A single microwire near-infrared exciton-polariton light-emitting diode

Exciton-polaritons, which originate from the strong coupling between photon modes of microresonators and excitons in semiconductor micro-/nanostructures, have drawn much attention due to their significance for fabricating coherent light sources which possess considerably lower emission thresholds. In this study, an exciton-polariton light-emitting diode (LED), made from a Ga-doped ZnO microwire (ZnO:Ga MW) and a p-GaAs template serving as the hole supplier, is fabricated. The n-ZnO:Ga MW/p-GaAs heterojunction device can emit light with a near-infrared wavelength of 880 nm and a narrow line width of about 60 nm. Due to the high quality whispering gallery mode (WGM) microcavities which are naturally self-constructed by the hexagon-shaped MW, the electroluminescence (EL) spectrum resolves into a series of resonance peaks which can be assigned to exciton-polariton features, leading to the strong coupling of the exciton and the WGM photon in the as-fabricated LED. The strong exciton-photon coupling is clearly evidenced via angle-resolved EL measurements, with the Rabi splitting energy extracted as 160 meV. Furthermore, by adjusting the size of the WGM microcavity structure naturally formed by the hexagonal MWs, particularly by adjusting the diameter of the wires, the exciton-polariton coupling strength in the single MW based LEDs can be tuned, with the as-extracted Rabi splitting energy varying in the range of 92-294 meV. The realization of a single MW based LED, which shows exciton-polariton behavior from a built-in optical microresonator, can enable a promising route for the future fabrication of polariton emitters, where the device performance no longer suffers from obstacles including the need for additional optical resonators, large lattice mismatch, and template availability.

Plasmon-enhanced strong exciton-polariton coupling in single microwire-based heterojunction light-emitting diodes

Manipulating the strong light-matter coupling interaction in optical microresonators that are naturally formed by semiconductor micro- or nanostructures is crucial for fabricating high-performance exciton-polariton devices. Such devices can function as coherent light sources having considerably lower emission threshold. In this study, an exciton-polariton light-emitting diode (LED), made of a single ZnO microwire (MW) and a p-GaN substrate, serving as the hole injector, was fabricated, and its working characteristics, in the near-ultraviolet region, were demonstrated. To further improve the quality of the single ZnO MW-based optical microresonator, Ag nanowires (AgNWs) with ultraviolet plasmonic response were deposited on the MW. Apart from the improvement of the electrical and optical properties of the hexagonal ZnO MW, the optically pumped whispering-gallery-mode lasing characteristics were significantly enhanced. Furthermore, a single ZnO MW not covered, and covered by AgNWs, was used to construct a heterojunction LED. Compared with single bare ZnO MW-based LED, significant enhancement of the device performance was achieved, including a significant enhancement in the light output and a small emission band blueshift. Specifically, the exciton-polariton emission was observably enhanced, and the corresponding Rabi splitting energy (∼ 495 meV) was significantly higher than that of the bare ZnO MW-based LED (∼ 370 meV). That ultraviolet plasmons of AgNWs enhanced the exciton-polariton coupling strength was further confirmed via angle-resolved electroluminescence measurements of the single MW-based polaritonic devices, which clearly illustrated the presence of Rabi splitting and subband anti-crossing characteristics. The experimental results provide new avenues to achieve extremely high coupling strengths, which can accelerate the advancements in electrically driven high-efficiency polaritonic coherent emitters and nonlinear devices.

Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

In this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3-x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3-x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

Green solvent assisted preparation of one-dimensional CsPbBr3 nanocrystals with a controllable morphology for cyan-emitting applications

Upon tuning the polarity of antisolvent medium, the length of CsPbBr3 NCs realizing the conversion from nanorods to NWs. Furthermore, the width of the NWs can be adjusted feasibly via the overgrowth of CsPbBr3 NWs.

An electrically driven single microribbon based near-infrared exciton–polariton light-emitting diode

An electrically driven exciton–polariton NIR-LED involving an n-ZnO:Ga microribbon/p-GaAs heterojunction was achieved. The Rabi splitting is measured to be 109 meV.

Plasmonic Nanolasers in On-Chip Light Sources: Prospects and Challenges

The plasmonic nanolaser is a class of lasers with the physical dimensions free from the optical diffraction limit. In the past decade, progress in performance, applications, and mechanisms of plasmonic nanolasers has increased dramatically. We review this advance and offer our prospectives on the remaining challenges ahead, concentrating on the integration with nanochips. In particular, we focus on the qualifications for electrical pumping, energy consumption, and ultrafast modulation. At last, we evaluate the strategies for on-chip source construction design and further threshold reduction to achieve a long-term room-temperature electrically pumped plasmonic nanolaser, the ultimate goal toward practical applications.