Directed Self-Assembly of Polystyrene-b-poly(propylene carbonate) on Chemical Patterns via Thermal Annealing for Next Generation Lithography

Bioinspired Block Copolymer for Mineralized Nanoporous Membrane

Homoporous membranes fabricated by self-assembled block copolymers (BCPs) have gained growing attention for their easy availability of well-ordered nanostructures for precise separation. However, it remains a challenges to improve the mechanical integrity, hydrophilic properties, and pore functionalities of the existing systems. To this end, we report an organic-mineral composite hybrid nanoporous BCP membrane with attractive superhydrophilicity, mechanical stability, and fouling-resistance derived from a bioinspired block copolymer, poly(propylene carbonate)- block-poly(4-vinylcatechol acetonide) (PPC- b-PVCA). The key advances include the following. (1) The PPC minor block is qualified as sacrificial domain because of its alkali sensitivity for generating monodisperse nanopores. (2) The PVCA matrix block contains the catechol groups, which enables the formation of inorganic layer  via a biomineralization process, thus producing an organic-mineral composite nanoporous BCP membrane with attractive superhydrophilicity, mechanical stability, and fouling resistance. A ∼200 nm thickness BCP film with monodisperse through-pores of 12 nm diameter cylinders oriented perpendicularly to a supporting microfiltration membrane is fabricated by sequential blade-casting, solvent annealing, hydrolysis sacrificial block, and biomineralization process. The mechanical stability, high water flow (114 L m^-2 h^-1 bar^-1), size fractionation of nanoparticles, as well as protein antiadsorption performance make the strategy provided here hold the promise of affording an advance platform for filtration, catalysis, and drug delivery.

Liquid crystalline moiety-assisted perpendicular orientation of cylindrical domains within P4VP-b-PMA(Az) films with high aspect ratio

Block copolymer (BCP) films with perpendicularly aligned cylindrical domains of high aspect ratio have important applications in diverse fields. However, an aspect ratio of the cylinders as high as 200 has rarely been reported so far. Here we demonstrate an efficient route to the formation of normally aligned P4VP cylinders with high aspect ratio surrounded by a matrix of azobenzene-containing block (PMA(Az)) via hierarchical self-assembly. A crisscross structure, consisting of parallelly aligned liquid crystalline (LC) layers and normally aligned self-assembly domains, is expected to assist the formation of well-defined nanostructures. The LC layers in the cylindrical films self-assemble to form smectic phase after solvent annealing, as confirmed by WAXD and UV-vis spectra. We found that the aspect ratio of the vertical P4VP cylinders is up to 200 and the film thickness reaches 6 μm. P4VP is a functional polymer, making this P4VP-b-PMA(Az) film more suitable for advanced filters, multi-nanochannels, nanolithography, and high-density storage media, etc.

Directed Self-Assembly of High χ Poly(styrene-b-(lactic acid-alt-glycolic acid)) Block Copolymers on Chemical Patterns via Thermal Annealing

We demonstrated the synthesis and directed self-assembly (DSA) of poly(styrene-b-(lactic acid-alt-glycolic acid)) (PS-b-PLGA). Lamellae-forming PS-b-PLGAs with a range of molecular weights were synthesized by ring-opening polymerization (ROP) of LGA (d,l-3-methyl-1,4-dioxane-2,5-dione) from hydroxy-terminated polystyrene (PS-OH) with stannous octoate as the catalyst and characterized by ¹H NMR spectroscopy, GPC, DSC, TGA, SAXS, and rheometry. The order-disorder transition temperatures (T_ODT) of four PS-b-PLGA block copolymers were determined by temperature sweep measurements and verified by variable-temperature SAXS, which were used to determine the temperature dependence of χ. The χ value of PS-b-PLGA is twice as large as that of poly(styrene-b-racemic lactide) (PS-b-PDLLA) at 150 °C, while the surface energies (γ) of PS and PLGA are nearly equal. Thin films of PS-b-PLGA were successfully directed to assemble on stripe chemical patterns with a range of pattern periods (L_S) upon thermal annealing. SEM analysis of the assembled films revealed that long-range ordered perpendicularly oriented lamellae were registered on chemical patterns with 2× density multiplication. These results qualify PS-b-PLGA as an attractive candidate for next-generation lithography with sub-10 nm resolution.

Ionic Liquids as Additives to Polystyrene- Block-Poly(Methyl Methacrylate) Enabling Directed Self-Assembly of Patterns with Sub-10 nm Features

Polystyrene- block-poly(methyl methacrylate) (PS- b-PMMA) is one of the prototypical block copolymers in directed self-assembly (DSA) research and development, with standardized protocols in place for processing on industrially relevant 300 mm wafers. Scaling of DSA patterns to pitches below 20 nm using PS- b-PMMA, however, is hindered by the relatively low Flory-Huggins interaction parameter, χ. Here, we investigate the approach of adding small amounts of ionic liquids (ILs) into PS- b-PMMA, which selectively segregates into the PMMA domain and effectively increases the χ parameter and thus the pattern resolution. The amount of IL additive is small enough to result in limited changes in PS- b-PMMA's surface and interfacial properties, thus maintaining industry-friendly processing by thermal annealing with a free surface. Three different ILs are studied comparatively regarding their compositional process window, capability of increasing χ, and thermal stability. By adding ∼3.1 vol % of the champion IL into a low-molecular-weight PS- b-PMMA ( M_n = 10.3k- b-9.5k), we demonstrated DSA on chemically patterned substrates of lamellar structures with feature sizes <8.5 nm. Compatibility of the PS- b-PMMMA/IL blends with the standardized processes that have been previously developed suggests that such blend materials could provide a drop-in solution for sub-10 nm lithography with the processing advantages of PS- b-PMMA.

Orthogonally Aligned Block Copolymer Line Patterns on Minimal Topographic Patterns

We demonstrate the generation of block copolymer (BCP) line patterns oriented orthogonal to a very small (minimal) topographic trench pattern over arbitrarily large areas using solvent-vapor annealing. Increasing the thickness of BCP films induced an orthogonal alignment of the BCP cylindrical microdomains, where full orthogonal alignment of the cylindrical microdomains with respect to the trench direction was obtained at a film thickness corresponding to 1.70 L₀. A capillary flow of the solvent across the trenches was a critical factor in the alignment of the cylindrical microdomains. Grazing incidence small-angle X-ray scattering was used to determine the orientation function of the microdomains, with a value of 0.997 being found reflecting a nearly perfect orientation. This approach to produce orthogonally aligned BCP line patterns could be extended to the nanomanufacturing and fabrication of hierarchical nanostructures.

A One-Step Route to CO2 -Based Block Copolymers by Simultaneous ROCOP of CO2 /Epoxides and RAFT Polymerization of Vinyl Monomers

The one-step synthesis of well-defined CO₂ -based diblock copolymers was achieved by simultaneous ring-opening copolymerization (ROCOP) of CO₂ /epoxides and RAFT polymerization of vinyl monomers using a trithiocarbonate compound bearing a carboxylic group (TTC-COOH) as the bifunctional chain transfer agent (CTA). The double chain-transfer effect allows for independent and precise control over the molecular weight of the two blocks and ensures narrow polydispersities of the resultant block copolymers (1.09-1.14). Notably, an unusual axial group exchange reaction between the aluminum porphyrin catalyst and TTC-COOH impedes the formation of homopolycarbonates. By taking advantage of the RAFT technique, it is able to meet the stringent demand for functionality control to well expand the application scopes of CO₂ -based polycarbonates.

Molecular Tailoring of Poly(styrene-b-methyl methacrylate) Block Copolymer Toward Perpendicularly Oriented Nanodomains with Sub-10 nm Features

We demonstrate a novel approach for fabricating vertically orientated, sub-10 nm, block copolymer (BCP) nanodomains on a substrate via molecular tailoring of poly(styrene-b-methyl methacrylate) (PS-b-PMMA) BCP, one of the most widely used BCPs for nanopatterning. The idea is to incorporate a short middle block of self-attracting poly(methacrylic acid) (PMAA) between the PS and PMMA blocks, where the PMAA middle block promotes phase separation between PS and PMMA, while maintaining the domain orientation perpendicular to the substrate. The designed PS-b-PMAA-b-PMMA triblock copolymers, which were synthesized via well-controlled anionic polymerization, exhibited order-disorder transition temperatures higher than that of pristine PS-b-PMMA BCPs, indicating the promotion of phase separation by the middle PMAA block. For PS-b-PMAA-b-PMMA BCPs with total molecular weights of 21 and 18 kg/mol, the domain spacing corresponds to 19.3 and 16.7 nm, respectively, allowing us to fabricate sub-10 nm nanodomain structures. More importantly, it was demonstrated that the PMAA middle block, which has a higher surface energy than PS and PMMA, does not significantly alter lateral concentration fluctuations, which are responsible for phase-separation in the lateral direction. This enabled the vertical orientation of microdomains with sub-10 nm feature size on a PS-r-PMMA neutral surface without an additional neutral top layer. We anticipate that this approach provides an important platform for next-generation lithography and nanopatterning applications that require sub-10 nm features over large areas with simple process and reduced cost.

Characterizing the Interface Scaling of High χ Block Copolymers near the Order-Disorder Transition

Advancements in the directed self-assembly of block copolymers (BCPs) have prompted the development of new materials with larger effective interaction parameters (χ_e). This enables BCP systems with phase separation at increasingly small degrees of polymerization (N). Very often these systems reside near the order-disorder transition and fit between the weak and strong segregation limits where the behavior of BCP systems is not as thoroughly understood. Utilizing resonant soft X-ray reflectivity (RSoXR) enables both the BCP pitch (L₀) and interface width (w_M) to be determined simultaneously, through a direct characterization of the composition profile of BCP lamellae oriented parallel to a substrate. A series of high χ_e BCPs with χ_e ranging from ≈0.04 to 0.25 and χ_eN from 19 to 70 have been investigated. The L₀/w_m ratio serves as an important metric for the feasibility of a material for nanopatterning applications; the results of the RSoXR measurement are used to establish a relationship between χ_e and L₀/w_m. The results of this analysis are correlated with experimentally established limits for the functionality of BCPs in nanopatterning applications. These results also provide guidance for the magnitude of χ_e needed to achieve small interface width for samples with sub-10 nm L₀.

Straightforward Integration Flow of a Silicon-Containing Block Copolymer for Line-Space Patterning

A promising alternative for the next-generation lithography is based on the directed self-assembly of block copolymers (BCPs) used as a bottom-up tool for the definition of nanometric features. Herein, a straightforward integration flow for line-space patterning is reported for a silicon BCP system, that is, poly(1,1-dimethylsilacyclobutane)-b-poly(styrene) (PDMSB-b-PS), able to define sub 15 nm features. Both in-plane cylindrical (L₀ = 20.7 nm) and out-of-plane lamellar structures (L₀ = 23.2 nm) formed through a rapid thermal annealing-10 min at 180 °C-were successfully integrated using graphoepitaxy to provide a long-range ordering of the BCP structure without the use of underlayers or top coats. Subsequent deep transfer into the silicon substrate using the hardened oxidized PDMSB domains as a mask is demonstrated. Combining a rapid self-assembly behavior, straightforward integration, and an excellent etching contrast, PDMSB-b-PS may become a material of choice for the next-generation lithography.

Directed Self-Assembly and Pattern Transfer of Five Nanometer Block Copolymer Lamellae

The directed self-assembly (DSA) and pattern transfer of poly(5-vinyl-1,3-benzodioxole-block-pentamethyldisilylstyrene) (PVBD-b-PDSS) is reported. Lamellae-forming PVBD-b-PDSS can form well resolved 5 nm (half-pitch) features in thin films with high etch selectivity. Reactive ion etching was used to selectively remove the PVBD block, and fingerprint patterns were subsequently transferred into an underlying chromium hard mask and carbon layer. DSA of the block copolymer (BCP) features resulted from orienting PVBD-b-PDSS on guidelines patterned by nanoimprint lithography. A density multiplication factor of 4× was achieved through a hybrid chemo-/grapho-epitaxy process. Cross-sectional scanning tunneling electron microscopy/electron energy loss spectroscopy (STEM/EELS) was used to analyze the BCP profile in the DSA samples. Wetting layers of parallel orientation were observed to form unless the bottom and top surface were neutralized with a surface treatment and top coat, respectively.

Flash Light Millisecond Self-Assembly of High χ Block Copolymers for Wafer-Scale Sub-10 nm Nanopatterning

One of the fundamental challenges encountered in successful incorporation of directed self-assembly in sub-10 nm scale practical nanolithography is the process compatibility of block copolymers with a high Flory-Huggins interaction parameter (χ). Herein, reliable, fab-compatible, and ultrafast directed self-assembly of high-χ block copolymers is achieved with intense flash light. The instantaneous heating/quenching process over an extremely high temperature (over 600 °C) by flash light irradiation enables large grain growth of sub-10 nm scale self-assembled nanopatterns without thermal degradation or dewetting in a millisecond time scale. A rapid self-assembly mechanism for a highly ordered morphology is identified based on the kinetics and thermodynamics of the block copolymers with strong segregation. Furthermore, this novel self-assembly mechanism is combined with graphoepitaxy to demonstrate the feasibility of ultrafast directed self-assembly of sub-10 nm nanopatterns over a large area. A chemically modified graphene film is used as a flexible and conformal light-absorbing layer. Subsequently, transparent and mechanically flexible nanolithography with a millisecond photothermal process is achieved leading the way for roll-to-roll processability.

Switchable catalytic processes involving the copolymerization of epoxides and carbon dioxide for the preparation of block polymers

The synthesis of block polymersviaa one-pot process with segments prepared by different or the same mechanistic pathways.