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Lee J, Ryu JH, Kim B, Hussain F, Mahata C, Sim E, Ismail M, Abbas Y, Abbas H, Lee DK, Kim MH, Kim Y, Choi C, Park BG, Kim S. Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering. ACS APPLIED MATERIALS & INTERFACES 2020; 12:33908-33916. [PMID: 32608233 DOI: 10.1021/acsami.0c07867] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this study, the resistive switching and synaptic properties of a complementary metal-oxide semiconductor-compatible Ti/a-BN/Si device are investigated for neuromorphic systems. A gradual change in resistance is observed in a positive SET operation in which Ti diffusion is involved in the conducting path. This operation is extremely suitable for synaptic devices in hardware-based neuromorphic systems. The isosurface charge density plots and experimental results confirm that boron vacancies can help generate a conducting path, whereas the conducting path generated by a Ti cation from interdiffusion forms is limited. A negative SET operation causes a considerable decrease in the formation energy of only boron vacancies, thereby increasing the conductivity in the low-resistance state, which may be related to RESET failure and poor endurance. The pulse transient characteristics, potentiation and depression characteristics, and good retention property of eight multilevel cells also indicate that the positive SET operation is more suitable for a synaptic device owing to the gradual modulation of conductance. Moreover, pattern recognition accuracy is examined by considering the conductance values of the measured data in the Ti/a-BN/Si device as the synaptic part of a neural network. The linear and symmetric synaptic weight update in a positive SET operation with an incremental voltage pulse scheme ensures higher pattern recognition accuracy.
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Affiliation(s)
- Jinju Lee
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Ji-Ho Ryu
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Boram Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Fayyaz Hussain
- Materials Research Simulation Laboratory (MSRL) Department of physics, Bahauddin Zakariya University, Multan 60800, Pakistan
| | - Chandreswar Mahata
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Eunjin Sim
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Muhammad Ismail
- School of Electronics Engineering, Chungbuk National University, Cheongju 28644, South Korea
| | - Yawar Abbas
- Department of Physics, Khalifa University, Abu Dhabi 127788, United Arab Emirates
| | - Haider Abbas
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Dong Keun Lee
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Min-Hwi Kim
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Yoon Kim
- School of Electrical and Computer Engineering, University of Seoul, Seoul, 02504, South Korea
| | - Changhwan Choi
- Division of Materials Science and Engineering, Hanyang University, Seoul 04763, South Korea
| | - Byung-Gook Park
- Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea
| | - Sungjun Kim
- Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, South Korea
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