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Jiao J, Miao N, Li Z, Gan Y, Zhou J, Sun Z. 2D Magnetic Janus Semiconductors with Exotic Structural and Quantum-Phase Transitions. J Phys Chem Lett 2019; 10:3922-3928. [PMID: 31251625 DOI: 10.1021/acs.jpclett.9b01543] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
2D magnetic semiconductors are intriguing for their great potential applications in spintronic nanodevices. Despite intensive research for decades, intrinsically 2D magnetic Janus semiconductors are scarce, and their design guidelines remain elusive. Herein we propose new 2D Janus Cr2O2XY (X = Cl, Y = Br/I) ferromagnets with asymmetric out-of-plane structural configurations from ab initio calculations. Abnormally, 2D Janus Cr2O2XY crystals with Pmm2 structures derived from pristine CrOX compounds are dynamically metastable. By introducing novel structural phase transitions, we generated new Pma2 phases with lower total energy and great dynamical stability. These new Janus Cr2O2XY monolayers are intrinsically ferromagnetic semiconductors and could be easily synthesized from experiment. Most interestingly, exotic quantum-phase transitions from the ferromagnetic semiconductor to the antiferromagnetic metal/semiconductor could be achieved in the Cr2O2ClI monolayer by applying compressive strains. Our study provides an alternative strategy to design new Janus Cr2O2XY monolayers and will inspire further investigations on relevant materials for electronic and spintronic applications.
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Affiliation(s)
- Jingyun Jiao
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science , Beihang University , Beijing 100191 , China
| | - Naihua Miao
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science , Beihang University , Beijing 100191 , China
| | - Zhen Li
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science , Beihang University , Beijing 100191 , China
| | - Yu Gan
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science , Beihang University , Beijing 100191 , China
| | - Jian Zhou
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
| | - Zhimei Sun
- School of Materials Science and Engineering , Beihang University , Beijing 100191 , China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science , Beihang University , Beijing 100191 , China
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Zheng S, Huang C, Yu T, Xu M, Zhang S, Xu H, Liu Y, Kan E, Wang Y, Yang G. High-Temperature Ferromagnetism in an Fe 3P Monolayer with a Large Magnetic Anisotropy. J Phys Chem Lett 2019; 10:2733-2738. [PMID: 31066565 DOI: 10.1021/acs.jpclett.9b00970] [Citation(s) in RCA: 29] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
For the development of high-performance spintronic nanodevices, one of the most urgent and challenging tasks is the preparation of two-dimensional materials with room-temperature ferromagnetism and a large magnetic anisotropic energy (MAE). Through first-principles swarm-intelligence structural search calculations, we identify an ideal ferromagnetic Fe3P monolayer, in which Fe atoms show a perfect Kagome lattice, leading to strong in-plane Fe-Fe coupling. The predicted Curie temperature of Fe3P reaches ∼420 K, and its MAE is comparable to those of ferromagnetic materials, such as Fe and Fe2Si. Moreover, the Fe3P monolayer remains as an above room-temperature ferromagnet under biaxial strains as large as 10%. Its lattice can be retained at temperatures of ≤1000 K, exhibiting a high thermodynamic stability. All of these desirable properties make the Fe3P monolayer a promising candidate for applications in spintronic nanodevices.
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Affiliation(s)
- Shuang Zheng
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
| | - Chengxi Huang
- Department of Applied Physics and Institution of Energy and Microstructure , Nanjing University of Science and Technology , Nanjing , Jiangsu 210094 , P. R. China
| | - Tong Yu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
| | - Meiling Xu
- Laboratory of Quantum Materials Design and Application, School of Physics and Electronic Engineering , Jiangsu Normal University , Xuzhou 221116 , China
| | - Shoutao Zhang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
| | - Haiyang Xu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
| | - Yichun Liu
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
| | - Erjun Kan
- Department of Applied Physics and Institution of Energy and Microstructure , Nanjing University of Science and Technology , Nanjing , Jiangsu 210094 , P. R. China
| | - Yanchao Wang
- State Key Laboratory of Superhard Materials, College of Physics , Jilin University , Changchun 130012 , China
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education , Northeast Normal University , Changchun 130024 , China
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53
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Sun W, Wang W, Chen D, Cheng Z, Wang Y. Valence mediated tunable magnetism and electronic properties by ferroelectric polarization switching in 2D FeI 2/In 2Se 3 van der Waals heterostructures. NANOSCALE 2019; 11:9931-9936. [PMID: 31070212 DOI: 10.1039/c9nr01510h] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Exploring two-dimensional (2D) materials with both ferromagnetic and ferroelectric properties is scientifically interesting and of great technical importance to numerous functionalities in nanoscale devices. In this work, we have demonstrated a strong magnetoelectric coupling that appeared in the 2D FeI2/In2Se3 van der Waals heterostructure. FeI2 layers undergo a transition from ferromagnetic to antiferromagnetic by reversing the direction of ferroelectric polarization. First-principles calculation predicts a new magnetoelectronic coupling mechanism which is completely different from the Dzyaloshinskii-Moriya (DM) effect in multiferroic materials. Because of the polarization discontinuity at the interface, the valence states of Fe ions change between +2 and +3 for two different polarization directions, leading to the magnetic interaction variation between the direct exchange and I ion mediated superexchange. Moreover, metallic 2D electron gas (2DEG) transfers from the surface of FeI2 to In2Se3 when the polarization reverses, which induces the spin polarization of the heterostructure varying from 93% to 0%. Our work is the first realization of manipulation magnetism by an electric field in full 2D van der Waals heterostructures.
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Affiliation(s)
- Wei Sun
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Wenxuan Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Dong Chen
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Zhenxiang Cheng
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China. and Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Innovation Campus, Squires Way, North Wollongong, NSW 2500, Australia.
| | - Yuanxu Wang
- Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
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Li X, Yang J. Toward Room-Temperature Magnetic Semiconductors in Two-Dimensional Ferrimagnetic Organometallic Lattices. J Phys Chem Lett 2019; 10:2439-2444. [PMID: 31034233 DOI: 10.1021/acs.jpclett.9b00769] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Obtaining room-temperature magnetically ordered two-dimensional (2D) semiconductors is urgently needed for high-speed nanospintronic devices but remains a big challenge. Here, we propose a potential route to solve this issue by constructing ferrimagnetic semiconductors in 2D metal organic frameworks, taking advantage of the high Curie temperature of ferrimagnetic semiconductors and easy tunability of metal organic frameworks. The proposal is confirmed by first-principles design of 2D metal organic frameworks with conjugated electron acceptors diketopyrrolopyrrole (DPP) as organic linkers and transition metal Cr (V) as nodes. The robust ferrimagnetic ordering comes from the strong direct exchange interaction between d-electron magnetic moments on transition metals and charge transfer-induced p-electron magnetic moments on DPPs, which can be modulated facilely by reducing the d-p orbital interaction distance via moderate compressive strain or increasing the d-p orbital charge transfer through introducing electron-withdrawing groups into the DPP moiety.
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Affiliation(s)
- Xingxing Li
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
| | - Jinlong Yang
- Department of Chemical Physics, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics , University of Science and Technology of China , Hefei , Anhui 230026 , People's Republic of China
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Zhou J, Qiao J, Duan CG, Bournel A, Wang KL, Zhao W. Large Tunneling Magnetoresistance in VSe 2/MoS 2 Magnetic Tunnel Junction. ACS APPLIED MATERIALS & INTERFACES 2019; 11:17647-17653. [PMID: 30983319 DOI: 10.1021/acsami.9b02493] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials provide the possibility of realizing heterostructures with coveted properties. Here, we report a theoretical investigation of the vdW magnetic tunnel junction (MTJ) based on VSe2/MoS2 heterojunction, where the VSe2 monolayer acts as a ferromagnet with room-temperature ferromagnetism. We propose the concept of spin-orbit torque (SOT) vdW MTJ with reliable reading and efficient writing operations. The nonequilibrium study reveals a large tunneling magnetoresistance of 846% at 300 K, identifying significantly its parallel and antiparallel states. Thanks to the strong spin Hall conductivity of MoS2, SOT is promising for the magnetization switching of VSe2 free layer. Quantum-well states come into being and resonances appear in MTJ, suggesting that the voltage control can adjust transport properties effectively. The SOT vdW MTJ based on VSe2/MoS2 provides desirable performance and experimental feasibility, offering new opportunities for 2D spintronics.
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Affiliation(s)
- Jiaqi Zhou
- Fert Beijing Institute, BDBC, School of Microelectronics , Beihang University , Beijing 100191 , China
- Centre de Nanosciences et de Nanotechnologies , CNRS, Université Paris-Sud, Université Paris-Saclay , Palaiseau 91120 , France
| | - Junfeng Qiao
- Fert Beijing Institute, BDBC, School of Microelectronics , Beihang University , Beijing 100191 , China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices, Department of Optoelectronics , East China Normal University , Shanghai 200241 , China
| | - Arnaud Bournel
- Centre de Nanosciences et de Nanotechnologies , CNRS, Université Paris-Sud, Université Paris-Saclay , Palaiseau 91120 , France
| | - Kang L Wang
- Device Research Laboratory, Department of Electrical Engineering , University of California , Los Angeles , California 90095 , United States
| | - Weisheng Zhao
- Fert Beijing Institute, BDBC, School of Microelectronics , Beihang University , Beijing 100191 , China
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56
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Han R, Yan Y. Strain-tunable electric structure and magnetic anisotropy in monolayer CrSI. Phys Chem Chem Phys 2019; 21:20892-20900. [DOI: 10.1039/c9cp03535d] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) ferromagnetic semiconductors provide platforms for studying novel physical phenomena in low dimensional materials.
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Affiliation(s)
- Ruilin Han
- School of Physics and Electronic Engineering
- Shanxi University
- Taiyuan 030006
- China
| | - Yu Yan
- Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education)
- Department of Physics
- Jilin University
- Changchun 130012
- China
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