High-Yield Functional Molecular Electronic Devices

Protective Layers Based on Carbon Paint To Yield High-Quality Large-Area Molecular Junctions with Low Contact Resistance

A major obstacle for transforming large-area molecular junctions into a viable technology is the deposition of a top, metallic contact over the self-assembled monolayer (SAM) without chemically damaging the molecules and preventing an interface-limited charge transport. Often a thin conducting layer is softly deposited over the SAM to protect it during the deposition of the metal electrode which requires conditions under which organic molecules are not stable. We report a new protective layer based on carbon paint which is highly conductive and has metallic-like behavior. Junctions made of SAMs of n-alkanethiolates supported by Au were characterized with both dc and ac techniques, revealing that carbon paint protective layers provide a solution to three well-known challenges in molecular junctions: series resistance of the leads, poor interface conductance, and low effective contact area related to the roughness of the interfaces. Transport is constant with coherent tunneling down to 10 K, indicating the carbon paint does not add spurious thermally activated components. The junctions have both high reproducibility and good stability against bias stressing. Finally, normalized differential conductance analysis of the tunneling characteristics of the junctions as a function of molecular length reveals that the scaling voltage changes with molecular length, indicating a significant voltage drop on the molecules rather than on the molecule-electrode interface. There is a clear inverse dependence of the scaling voltage on length, which we deduced has a tunneling barrier height of close to 2 eV. The paper establishes the reliability of carbon paint protective layers and provides a procedure for discriminating genuine molecular effects from interfacial contributions.

Electronic Communication as a Transferable Property of Molecular Bridges?

Electronic communication through molecular bridges is important for different types of experiments, such as single-molecule conductance, electron transfer, superexchange spin coupling, and intramolecular singlet fission. In many instances, the chemical structure of the bridge determines how the two parts it is connecting communicate, and does so in ways that are transferable between these different manifestations (for example, high conductance often correlates with strong antiferromagnetic spin coupling, and low conductance due to destructive quantum interference correlates with ferromagnetic coupling). Defining electronic communication as a transferable property of the bridge can help transfer knowledge between these different areas of research. Examples and limits of such transferability are discussed here, along with some possible directions for future research, such as employing spin-coupled and mixed-valence systems as structurally well-controlled proxies for understanding molecular conductance and for validating first-principles theoretical methodologies, building conceptual understanding for the growing experimental work on intramolecular singlet fission, and developing measures for the transferability of electronic communication as a bridge property.

Energy Level Alignment in Molecular Tunnel Junctions by Transport and Spectroscopy: Self-Consistency for the Case of Alkyl Thiols and Dithiols on Ag, Au, and Pt Electrodes

We report here an extensive study of transport and electronic structure of molecular junctions based on alkyl thiols (CnT; n = 7, 8, 9, 10, 12) and dithiols (CnDT; n = 8, 9, 10) with various lengths contacted with different metal electrodes (Ag, Au, Pt). The dependence of the low-bias resistance (R) on contact work function indicates that transport is HOMO-assisted (p-type transport). Analysis of the current-voltage (I-V) characteristics for CnT and CnDT tunnel junctions with the analytical single-level model (SLM) provides both the HOMO-Fermi energy offset ε_h^trans and the average molecule-electrode coupling (Γ) as a function of molecular length (n), electrode work function (Φ), and the number of chemical contacts (one or two). The SLM analysis reveals a strong Fermi level (E_F) pinning effect in all the junctions, i.e., ε_h^trans changes very little with n, Φ, and the number of chemical contacts, but Γ depends strongly on these variables. Significantly, independent measurements of the HOMO-Fermi level offset (ε_h^UPS) by ultraviolet photoelectron spectroscopy (UPS) for CnT and CnDT SAMs agree remarkably well with the transport-estimated ε_h^trans. This result provides strong evidence for hole transport mediated by localized HOMO states at the Au-thiol interface, and not by the delocalized σ states in the C-C backbones, clarifying a long-standing issue in molecular electronics. Our results also substantiate the application of the single-level model for quantitative, unified understanding of transport in benchmark molecular junctions.

In Operando Characterization and Control over Intermittent Light Emission from Molecular Tunnel Junctions via Molecular Backbone Rigidity

In principle, excitation of surface plasmons by molecular tunnel junctions can be controlled at the molecular level. Stable electrical excitation sources of surface plasmons are therefore desirable. Herein, molecular junctions are reported where tunneling charge carriers excite surface plasmons in the gold bottom electrodes via inelastic tunneling and it is shown that the intermittent light emission (blinking) originates from conformational dynamics of the molecules. The blinking rates, in turn, are controlled by changing the rigidity of the molecular backbone. Power spectral density analysis shows that molecular junctions with flexible aliphatic molecules blink, while junctions with rigid aromatic molecules do not.

Interplay of Collective Electrostatic Effects and Level Alignment Dictates the Tunneling Rates across Halogenated Aromatic Monolayer Junctions

Predictions about the electrical conductance across molecular junctions based on self-assembled monolayers (SAMs) are often made from the SAM precursor properties. Collective electrostatic effects, however, in a densely packed SAM can override these predictions. We studied, experimentally and theoretically, molecular tunneling junctions based on thiolate SAMs with an aromatic biphenyl backbone and variable, highly polarizable halogen termini X (S-(C₆H₅)₂X; X = H, F, Cl, Br, or I). We found that the halogen-terminated systems show tunneling rates and dielectric behavior that are independent of X despite the large change in the electronegativity of the terminal atom. Using density functional theory, we show that collective electrostatic effects result in modulations of the electrostatic potential that are strongly confined spatially along the direction of charge transport, thereby rendering the role of the halogen atoms insignificant for SAMs with conjugated backbones.

Directional Excitation of Surface Plasmon Polaritons via Molecular Through-Bond Tunneling across Double-Barrier Tunnel Junctions

Directional excitation of surface plasmon polaritons (SPPs) by electrical means is important for the integration of plasmonics with molecular electronics or steering signals toward other components. We report electrically driven SPP sources based on quantum mechanical tunneling across molecular double-barrier junctions, where the tunneling pathway is defined by the molecules' chemical structure as well as by their tilt angle with respect to the surface normal. Self-assembled monolayers of S(CH₂)_nBPh (BPh = biphenyl, n = 1-7) on Au, where the alkyl chain and the BPh units define two distinct tunnel barriers in series, were used to demonstrate and control the geometrical effects. The tilt angle of the BPh unit with respect to the surface normal depends on the value of n, and is 45° when n is even and 23° when n is odd. The tilt angle of the alkyl chain is fixed at 30° and independent of n. For values of n = 1-3, SPPs are directionally launched via directional tunneling through the BPh units. For values of n > 3, tunneling along the alkyl chain dominates the SPP excitation. Molecular level control of directionally launching SPPs is achieved without requiring additional on-chip optical elements, such as antennas, or external elements, such as light sources. Using the molecular tunneling junctions, we provide the first direct experimental demonstration of molecular double-barrier tunneling junctions.

Oscillation in the stability of consecutive chemical bonds at the molecule-metal interface - the case of ionic bonding

Ion-induced desorption was successfully applied for the analysis of the stability of chemical bonds at the molecule-metal interface in the case of ionic bonding. The obtained experimental data combined with the results of the DFT calculations reveal the effect of positional oscillations in the stability of consecutive chemical bonds, which has general character in chemistry.

Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions

This paper describes how the intensive (tunneling decay coefficient β and rectification ratio R) and extensive (current density J) properties of Ag-S(CH₂) _n-1CH₃//GaO _x/EGaIn junctions ( n = 10, 14, 18) and molecular diodes of the form of Ag-S(CH₂)₁₁Fc//GaO _x/EGaIn depend on A_geo, the contact area between the self-assembled monolayer and the cone-shaped EGaIn tip. Large junctions with A_geo ≥ 1000 μm² are unreliable and defects, such as pinholes, dominate the charge transport characteristics. For S(CH₂)₁₁Fc SAMs, R decreases from 130 to unity with increasing A_geo due to an increase in the leakage current (the current flowing across the junction at reverse bias when the diodes block current flow). The value of β decreases from 1.00 ± 0.06 n^-1 to 0.70 ± 0.03 n^-1 with increasing A_geo which also indicates that large junctions suffer from defects. Small junctions with A_geo ≤ 300 μm² are not stable due to the high surface tension of the bulk EGaIn resulting in unstable EGaIn tips. In addition, the contact area for such small junctions is dominated by the rough tip apex reducing the effective contact area and reproducibility significantly. The contact area of very large junctions is dominated by the relatively smooth side walls of the tips. Our findings show that there is an optimum range for the value of A_geo between 300-500 μm² where the electrical properties of the junctions are dominated by molecular effects. In this range of A_geo, the value of J (defined by I/ A_geo where I is the measured current) increases with A_geo until it plateaus for junctions with A_geo > 1000 μm² in agreement with recently reported findings by the Whitesides group. In this regime reproducible measurements of J can be obtained provided A_geo is kept constant.

Molecular Rectifiers on Silicon: High Performance by Enhancing Top-Electrode/Molecule Coupling

One of the simplest molecular-scale electronic devices is the molecular rectifier. In spite of considerable efforts aimed at understanding structure-property relationships in these systems, devices with predictable and stable electronic properties are yet to be developed. Here, we demonstrate highly efficient current rectification in a new class of compounds that form self-assembled monolayers on silicon. We achieve this by exploiting the coupling of the molecules with the top electrode which, in turn, controls the position of the relevant molecular orbitals. The molecules consist of a silane anchoring group and a nitrogen-substituted benzene ring, separated by a propyl group and imine linkage, and result from a simple, robust, and high-yield synthetic procedure. We find that when incorporated in molecular diodes, these compounds can rectify current by as much as 3 orders of magnitude, depending on their structure, with a maximum rectification ratio of 2635 being obtained in ( E)-1-(4-cyanophenyl)- N-(3-(triethoxysilyl) propyl)methanimine (average R_avg = 1683 ± 458, at an applied voltage of 2 V). This performance is on par with that of the best molecular rectifiers obtained on metallic electrodes, but it has the advantage of lower cost and more efficient integration with current silicon technologies. The development of molecular rectifiers on silicon may yield hybrid systems that can expand the use of silicon toward novel functionalities governed by the molecular species grafted onto its surface.

Long-Range Activationless Photostimulated Charge Transport in Symmetric Molecular Junctions

Molecular electronic junctions consisting of nitroazobenzene oligomers covalently bonded to a conducting carbon surface using an established "all-carbon" device design were illuminated with UV-vis light through a partially transparent top electrode. Monitoring junction conductance with a DC bias imposed permitted observation of photocurrents while varying the incident wavelength, light intensity, molecular layer thickness, and temperature. The photocurrent spectrum tracked the in situ absorption spectrum of nitroazobenzene, increased linearly with light intensity, and depended exponentially on applied bias. The electronic characteristics of the photocurrent differed dramatically from those of the same device in the dark, with orders of magnitude higher conductance and very weak attenuation with molecular layer thickness (β = 0.14 nm^-1 for thickness above 5 nm). The temperature dependence of the photocurrent was opposite that of the dark current, with a 35% decrease in conductance between 80 and 450 K, while the dark current increased by a factor of 4.5 over the same range. The photocurrent was similar to the dark current for thin molecular layers but greatly exceeded the dark current for low bias and thick molecular layers. We conclude that the light and dark mechanisms are additive, with photoexcited carriers transported without thermal activation for a thickness range of 5-10 nm. The inverse temperature dependence is likely due to scattering or recombination events, both of which increase with temperature and in turn decrease the photocurrent. Photostimulated resonant transport potentially widens the breadth of conceivable molecular electronic devices and may have immediate value for wavelength-specific photodetection.

Rotational switches in the two-dimensional fullerene quasicrystal

One of the essential components of molecular electronic circuits are switching elements that are stable in two different states and can ideally be switched on and off many times. Here, distinct buckminsterfullerenes within a self-assembled monolayer, forming a two-dimensional dodecagonal quasicrystal on a Pt-terminated Pt3Ti(111) surface, are identified to form well separated molecular rotational switching elements. Employing scanning tunneling microscopy, the molecular-orbital appearance of the fullerenes in the quasicrystalline monolayer is resolved. Thus, fullerenes adsorbed on the 36 vertex configuration are identified to exhibit a distinctly increased mobility. In addition, this finding is verified by differential conductance measurements. The rotation of these mobile fullerenes can be triggered frequently by applied voltage pulses, while keeping the neighboring molecules immobile. An extensive analysis reveals that crystallographic and energetic constraints at the molecule/metal interface induce an inequality of the local potentials for the 36 and 32.4.3.4 vertex sites and this accounts for the switching ability of fullerenes on the 36 vertex sites. Consequently, a local area of the 8/3 approximant in the two-dimensional fullerene quasicrystal consists of single rotational switching fullerenes embedded in a matrix of inert molecules. Furthermore, it is deduced that optimization of the intermolecular interactions between neighboring fullerenes hinders the realization of translational periodicity in the fullerene monolayer on the Pt-terminated Pt3Ti(111) surface.

Two-Terminal Molecular Memory through Reversible Switching of Quantum Interference Features in Tunneling Junctions

Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores from a quinoid to a hydroquinoid form. The resulting rearomatization converts the bond topology from a cross-conjugated to a linearly conjugated π system. The cross-conjugated form correlates to the appearance of an interference feature in the transmission spectrum that vanishes for the linearly conjugated form. Owing to the presence of electron-withdrawing nitrile groups, the reduction potential and the interference feature lie close to the work function and Fermi level of the metallic substrate. We exploited the relationship between conjugation patterns and quantum interference to create nonvolatile memory in proto-devices using eutectic Ga-In as the top contact.

Influence of the donor unit on the rectification ratio in tunnel junctions based on donor-acceptor SAMs using PTM units as acceptors

Dyads formed by an electron donor unit (D) covalently linked to an electron acceptor (A) by an organic bridge are promising materials as molecular rectifiers. Very recently, we have reported the charge transport measurements across self-assembled monolayers (SAMs) of two D-A systems consisting of the ferrocene (Fc) electron-donor linked to a polychlorotriphenylmethane (PTM) electron-acceptor in its non-radical (SAM 1) and radical (SAM 2) forms. Interestingly, we observed that the non-radical SAM 1 showed rectification behavior of 2 orders of magnitude higher than its radical analogue dyad 2. In order to study the influence of the donor unit on the transport properties, we report herein the synthesis and characterization of two new D-A SAMs in which the electron-donor Fc unit is replaced by a tetrathiafulvalene (TTF) moiety linked to the PTM unit in its non-radical (SAM 3) and radical (SAM 4) forms. The observed decrease in the rectification ratio and increased current density for TTF-PTM based SAMs 3 and 4 in comparison to Fc-PTM based SAMs 1 and 2 are explained, supported by theoretical calculations, by significant changes in the electronic and supramolecular structures.

Realization of Molecular-Based Transistors

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly.

Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles

Considerable advances in the field of molecular electronics have been achieved over the recent years. One persistent challenge, however, is the exploitation of the electronic properties of molecules fully integrated into devices. Typically, the molecular electronic properties are investigated using sophisticated techniques incompatible with a practical device technology, such as the scanning tunneling microscopy. The incorporation of molecular materials in devices is not a trivial task as the typical dimensions of electrical contacts are much larger than the molecular ones. To tackle this issue, we report on hybrid capacitors using mechanically-compliant nanomembranes to encapsulate ultrathin molecular ensembles for the investigation of molecular dielectric properties. As the prototype material, copper (II) phthalocyanine (CuPc) has been chosen as information on its dielectric constant (k _CuPc) at the molecular scale is missing. Here, hybrid nanomembrane-based capacitors containing metallic nanomembranes, insulating Al₂O₃ layers, and the CuPc molecular ensembles have been fabricated and evaluated. The Al₂O₃ is used to prevent short circuits through the capacitor plates as the molecular layer is considerably thin (<30 nm). From the electrical measurements of devices with molecular layers of different thicknesses, the CuPc dielectric constant has been reliably determined (k _CuPc = 4.5 ± 0.5). These values suggest a mild contribution of the molecular orientation on the CuPc dielectric properties. The reported nanomembrane-based capacitor is a viable strategy for the dielectric characterization of ultrathin molecular ensembles integrated into a practical, real device technology.

Trapping and Deposition of Dye-Molecule Nanoparticles in the Nanogap of a Plasmonic Antenna

Plasmonic nanostructures, which allow light focusing at the deep subwavelength scale, and colloidal nanoparticles with unique optoelectronic properties are nowadays fabricated with nanometer precision. However, to fully control and exploit nanoscale light-matter interactions in hybrid plasmonic-nanophotonic devices, both materials must be assembled in heterostructures with similar precision. Near-field optical forces have recently attracted much attention, as they can precisely trap and position nanoparticles at plasmonic hotspots. However, long-range attraction and the surface bonding of nanoparticles usually require other specific techniques, such as electrothermal heating and surface chemical treatments. This Letter reports on the optical trapping and deposition of dye-molecule nanoparticles in the nanogap of a gold antenna. The nanoparticles are captured by focusing a near-infrared laser beam on a targeted plasmonic antenna. This single-step deposition process requires only a few seconds under 1.4-1.8 MW·cm^-2 continuous-wave illumination and shows a polarization dependence smaller than expected. Fluorescence and electronic microscopy observations suggest that nanoparticle deposition arises from a trade-off between optical and thermal effects.

Transition from direct to inverted charge transport Marcus regions in molecular junctions via molecular orbital gating

Solid-state molecular tunnel junctions are often assumed to operate in the Landauer regime, which describes essentially activationless coherent tunnelling processes. In solution, on the other hand, charge transfer is described by Marcus theory, which accounts for thermally activated processes. In practice, however, thermally activated transport phenomena are frequently observed also in solid-state molecular junctions but remain poorly understood. Here, we show experimentally the transition from the Marcus to the inverted Marcus region in a solid-state molecular tunnel junction by means of intra-molecular orbital gating that can be tuned via the chemical structure of the molecule and applied bias. In the inverted Marcus region, charge transport is incoherent, yet virtually independent of temperature. Our experimental results fit well to a theoretical model that combines Landauer and Marcus theories and may have implications for the interpretation of temperature-dependent charge transport measurements in molecular junctions.

Bottom-up, Robust Graphene Ribbon Electronics in All-Carbon Molecular Junctions

Large-area molecular electronic junctions consisting of 5-carbon wide graphene ribbons (GR) with lengths of 2-12 nm between carbon electrodes were fabricated by electrochemical reduction of diazotized 1,8-diaminonaphthalene. Their conductance greatly exceeds that observed for other molecular junctions of similar thicknesses, by a factor of >1 × 10⁴ compared to polyphenylenes and >1 × 10⁷ compared to alkane chains. The remarkable increase of conductance of the GR nanolayer results from (i) uninterrupted planarity of fused-arene structure affording extensive π-electron delocalization and (ii) enhanced electronic coupling of molecular layer with the carbon bottom contact by two-point covalent bonding, in agreement with DFT-based simulations.

Bottom-electrode induced defects in self-assembled monolayer (SAM)-based tunnel junctions affect only the SAM resistance, not the contact resistance or SAM capacitance

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied. Usually, junctions are characterized by two-terminal current–voltage measurements where only the total current across the junction is measured, but with these methods one cannot distinguish how the individual components of the junctions are altered by the defects. Here we show that the roughness of the bottom-electrode is a crucial factor in determining the electrical properties of self-assembled monolayer (SAM)-based junctions. We used potentiodynamic impedance spectroscopy to reveal which components of the junctions are altered by defective bottom electrodes because this method allows for direct determination of all components that impede charge transport in the equivalent circuit of the junctions. We intentionally introduced defects via the roughness of the bottom electrode and found that these defects lower the SAM resistance but they do not alter the capacitance of the SAM or the contact resistance of the junction. In other words, defective junctions can be seen as “leaky capacitors” resulting in an underestimation of the SAM resistance of two orders of magnitude. These results help to improve the interpretation of data generated by SAM-based junctions and explain in part the observed large spread of reported tunneling rates for the same molecules measured across different platforms.

In large area molecular junctions, defects are always present and can be caused by impurities and/or defects in the electrode materials and/or SAMs, but how they affect the electrical characteristics of junctions has rarely been studied.