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Guin SN, Sanyal D, Biswas K. The effect of order-disorder phase transitions and band gap evolution on the thermoelectric properties of AgCuS nanocrystals. Chem Sci 2016; 7:534-543. [PMID: 29896345 PMCID: PMC5952868 DOI: 10.1039/c5sc02966j] [Citation(s) in RCA: 51] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2015] [Accepted: 10/07/2015] [Indexed: 11/21/2022] Open
Abstract
Copper and silver based chalcogenides, chalco-halides, and halides form a unique class of semiconductors, as they display mixed ionic and electronic conduction in their superionic phase. These compounds are composed of softly coupled cationic and anionic substructures, and undergo a transition to a superionic phase displaying changes in the substructure of their mobile ions with varying temperature. Here, we demonstrate a facile, ambient and capping agent free solution based synthesis of AgCuS nanocrystals and their temperature dependent (300-550 K) thermoelectric properties. AgCuS is known to show fascinating p-n-p type conduction switching in its bulk polycrystalline form. Temperature dependent synchrotron powder X-ray diffraction, heat capacity and Raman spectroscopy measurements indicate the observation of two superionic phase transitions, from a room temperature ordered orthorhombic (β) to a partially disordered hexagonal (α) phase at ∼365 K and from the hexagonal (α) to a fully disordered cubic (δ) phase at ∼439 K, in nanocrystalline AgCuS. The size reduction to the nanoscale resulted in a large variation in the thermoelectric properties compared to its bulk counterpart. Temperature dependent Seebeck coefficient measurements indicate that the nanocrystalline AgCuS does not display the p-n-p type conduction switching property like its bulk form, but remains p-type throughout the measured temperature range due to the presence of excess localized Ag vacancies. Nanocrystalline AgCuS exhibits a wider electronic band gap (∼1.2 eV) compared to that of the bulk AgCuS (∼0.9 eV), which is not sufficient to close the band gap to form a semimetallic intermediate state during the orthorhombic to hexagonal superionic phase transition, thus AgCuS nanocrystals do not show conduction type switching properties like their bulk counterpart. The present study demonstrates that ambient solution phase synthesis and size reduction to the nanoscale can tailor the order-disorder phase transition, the band gap and the electronic conduction properties in superionic compounds, which will not only enrich solid-state inorganic chemistry but also open a new avenue to design multifunctional materials.
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Affiliation(s)
- Satya N Guin
- New Chemistry Unit , Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) , Jakkur P.O. , Bangalore 560064 , India .
| | - Dirtha Sanyal
- Variable Energy Cyclotron Centre , 1/AF Bidhannagar , Kolkata 700064 , India
| | - Kanishka Biswas
- New Chemistry Unit , Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) , Jakkur P.O. , Bangalore 560064 , India .
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52
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Jana MK, Singh A, Late DJ, Rajamathi CR, Biswas K, Felser C, Waghmare UV, Rao CNR. A combined experimental and theoretical study of the structural, electronic and vibrational properties of bulk and few-layer Td-WTe2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:285401. [PMID: 26102263 DOI: 10.1088/0953-8984/27/28/285401] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
The recent discovery of non-saturating giant positive magnetoresistance has aroused much interest in Td-WTe(2). We have investigated structural, electronic and vibrational properties of bulk and few-layer Td-WTe(2) experimentally and theoretically. Spin-orbit coupling is found to govern the semi-metallic character of Td-WTe(2) and its structural link with the metallic 1 T form provides an understanding of its structural stability. There is a metal-to-insulator switch-over in the electrical conductivity and a change in the sign of the Seebeck coefficient around 373 K. Lattice vibrations of Td-WTe(2) have been analyzed using first-principles calculations. Out of the 33 possible zone-center Raman active modes, five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm(-1) in bulk Td-WTe(2). Based on symmetry analysis and calculated Raman tensors, we assign the intense bands at 165 cm(-1) and 212 cm(-1) to the A'(1)and A''(1) modes, respectively. Most of the Raman bands stiffen with decreasing thickness, and the ratio of the integrated intensities of the A''(1) to A'(1) bands decreases in the few-layer sample, while all the bands soften in both the bulk and few-layer samples with increasing temperature.
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Affiliation(s)
- Manoj K Jana
- New chemistry Unit, International Centre for Materials Science and Sheikh Saqr Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
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53
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Sun X, Guo Y, Wu C, Xie Y. The Hydric Effect in Inorganic Nanomaterials for Nanoelectronics and Energy Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3850-3867. [PMID: 25996550 DOI: 10.1002/adma.201500546] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2015] [Revised: 03/30/2015] [Indexed: 06/04/2023]
Abstract
Protons, as one of the world's smallest ions, are able to trigger the charge effect without obvious lattice expansion inside inorganic materials, offering a unique and important test-bed for controlling their diverse functionalities. Arising from the high chemical reactivity of hydrogen (easily losing an electron) with various main group anions (easily accepting a proton), the hydric effect provides a convenient and environmentally benign route to bring about fascinating new physicochemical properties, as well as to create new inorganic structures based on the "old lattice" without dramatically destroying the pristine structure, covering most inorganic materials. Moreover, hydrogen atoms tend to bond with anions or to produce intrinsic defects, both of which are expected to inject extra electrons into lattice framework, promising advances in control of bandgap, spin behavior, and carrier concentration, which determine functionality for wide applications. In this review article, recently developed effective hydric strategies are highlighted, which include the conventional hydric reaction under high temperature or room temperature, proton irradiation or hydrogen plasma treatment, and gate-electrolyte-driven adsorption or doping. The diverse physicochemical properties brought by the hydric effect via modulation of the intrinsic electronic structure are also summarized, finding wide applications in nanoelectronics, energy applications, and catalysis.
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Affiliation(s)
- Xu Sun
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials) and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui, 230026, PR China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials) and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui, 230026, PR China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials) and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui, 230026, PR China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale, iChEM (Collaborative Innovation Center of Chemistry for Energy Materials) and CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science & Technology of China, Hefei, Anhui, 230026, PR China
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54
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Sun P, Wei B, Zhang J, Tomczak JM, Strydom AM, Søndergaard M, Iversen BB, Steglich F. Large Seebeck effect by charge-mobility engineering. Nat Commun 2015; 6:7475. [PMID: 26108283 PMCID: PMC4491185 DOI: 10.1038/ncomms8475] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2015] [Accepted: 05/12/2015] [Indexed: 11/20/2022] Open
Abstract
The Seebeck effect describes the generation of an electric potential in a conducting solid exposed to a temperature gradient. In most cases, it is dominated by an energy-dependent electronic density of states at the Fermi level, in line with the prevalent efforts towards superior thermoelectrics through the engineering of electronic structure. Here we demonstrate an alternative source for the Seebeck effect based on charge-carrier relaxation: a charge mobility that changes rapidly with temperature can result in a sizeable addition to the Seebeck coefficient. This new Seebeck source is demonstrated explicitly for Ni-doped CoSb3, where a marked mobility change occurs due to the crossover between two different charge-relaxation regimes. Our findings unveil the origin of pronounced features in the Seebeck coefficient of many other elusive materials characterized by a significant mobility mismatch. When utilized appropriately, this effect can also provide a novel route to the design of improved thermoelectric materials. The Seebeck effect causes an electrical potential across a temperature gradient in a material, and is therefore useful for generating useful current from waste heat. Here, the authors show that the Seebeck effect can arise due to charge-carrier relaxation in addition to the conventional mechanism.
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Affiliation(s)
- Peijie Sun
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Beipei Wei
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiahao Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jan M Tomczak
- Institute of Solid State Physics, Vienna University of Technology, A-1040 Vienna, Austria
| | - A M Strydom
- 1] Highly Correlated Matter Research Group, Department of Physics, University of Johannesburg, Auckland Park 2006, South Africa [2] Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
| | - M Søndergaard
- Department of Chemistry, University of Aarhus, DK-8000 Aarhus C, Denmark
| | - Bo B Iversen
- Department of Chemistry, University of Aarhus, DK-8000 Aarhus C, Denmark
| | - Frank Steglich
- 1] Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany
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55
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Zhou B, Li M, Wu Y, Yang C, Zhang WH, Li C. Monodisperse AgSbS2Nanocrystals: Size-Control Strategy, Large-Scale Synthesis, and Photoelectrochemistry. Chemistry 2015; 21:11143-51. [DOI: 10.1002/chem.201501000] [Citation(s) in RCA: 27] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2015] [Indexed: 11/08/2022]
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56
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Welzmiller S, Hennersdorf F, Schlegel R, Fitch A, Wagner G, Oeckler O. Silver Indium Telluride Semiconductors and Their Solid Solutions with Cadmium Indium Telluride: Structure and Physical Properties. Inorg Chem 2015; 54:5745-56. [DOI: 10.1021/acs.inorgchem.5b00433] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Simon Welzmiller
- Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststraße 20, 04275 Leipzig, Germany
| | - Felix Hennersdorf
- Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststraße 20, 04275 Leipzig, Germany
| | - Robert Schlegel
- Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststraße 20, 04275 Leipzig, Germany
| | - Andrew Fitch
- ESRF−The European Synchrotron; 71, Avenue des Martyrs, 38043 Grenoble Cedex 9, France
| | - Gerald Wagner
- Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststraße 20, 04275 Leipzig, Germany
| | - Oliver Oeckler
- Faculty of Chemistry and Mineralogy, Leipzig University, Scharnhorststraße 20, 04275 Leipzig, Germany
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57
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Li Z, Xiao C, Fan S, Deng Y, Zhang W, Ye B, Xie Y. Dual Vacancies: An Effective Strategy Realizing Synergistic Optimization of Thermoelectric Property in BiCuSeO. J Am Chem Soc 2015; 137:6587-93. [PMID: 25927811 DOI: 10.1021/jacs.5b01863] [Citation(s) in RCA: 57] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Vacancy is a very important class of phonon scattering center to reduce thermal conductivity for the development of high efficient thermoelectric materials. However, conventional monovacancy may also act as an electron or hole acceptor, thereby modifying the electrical transport properties and even worsening the thermoelectric performance. This issue urges us to create new types of vacancies that scatter phonons effectively while not deteriorating the electrical transport. Herein, taking BiCuSeO as an example, we first reported the successful synergistic optimization of electrical and thermal parameters through Bi/Cu dual vacancies. As expected, as compared to its pristine and monovacancy samples, these dual vacancies further increase the phonon scattering, which results in an ultra low thermal conductivity of 0.37 W m(-1) K(-1) at 750 K. Most importantly, the clear-cut evidence in positron annihilation unambiguously confirms the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant increase of electrical conductivity with relatively high Seebeck coefficient. As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 750 K, which is superior to that of its native sample and monovacancies-dominant counterparts. These findings undoubtedly elucidate a new strategy and direction for rational design of high performance thermoelectric materials.
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58
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Han SK, Gu C, Gong M, Yu SH. A Trialkylphosphine-Driven Chemical Transformation Route to Ag- and Bi-Based Chalcogenides. J Am Chem Soc 2015; 137:5390-6. [DOI: 10.1021/jacs.5b00041] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Shi-Kui Han
- Division
of Nanomaterials and Chemistry, Hefei National Laboratory for Physical
Sciences at Microscale, Collaborative Innovation Center of Suzhou
Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Chao Gu
- Division
of Nanomaterials and Chemistry, Hefei National Laboratory for Physical
Sciences at Microscale, Collaborative Innovation Center of Suzhou
Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Ming Gong
- Lab
of Mechanical and Material Science, School of Engineering Science, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Shu-Hong Yu
- Division
of Nanomaterials and Chemistry, Hefei National Laboratory for Physical
Sciences at Microscale, Collaborative Innovation Center of Suzhou
Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
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59
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Chemical Potential Tuning and Enhancement of Thermoelectric Properties in Indium Selenides. MATERIALS 2015; 8:1283-1324. [PMID: 28788002 PMCID: PMC5455425 DOI: 10.3390/ma8031283] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2015] [Revised: 03/10/2015] [Accepted: 03/11/2015] [Indexed: 11/17/2022]
Abstract
Researchers have long been searching for the materials to enhance thermoelectric performance in terms of nano scale approach in order to realize phonon-glass-electron-crystal and quantum confinement effects. Peierls distortion can be a pathway to enhance thermoelectric figure-of-merit ZT by employing natural nano-wire-like electronic and thermal transport. The phonon-softening known as Kohn anomaly, and Peierls lattice distortion decrease phonon energy and increase phonon scattering, respectively, and, as a result, they lower thermal conductivity. The quasi-one-dimensional electrical transport from anisotropic band structure ensures high Seebeck coefficient in Indium Selenide. The routes for high ZT materials development of In4Se3−δ are discussed from quasi-one-dimensional property and electronic band structure calculation to materials synthesis, crystal growth, and their thermoelectric properties investigations. The thermoelectric properties of In4Se3−δ can be enhanced by electron doping, as suggested from the Boltzmann transport calculation. Regarding the enhancement of chemical potential, the chlorine doped In4Se3−δCl0.03 compound exhibits high ZT over a wide temperature range and shows state-of-the-art thermoelectric performance of ZT = 1.53 at 450 °C as an n-type material. It was proven that multiple elements doping can enhance chemical potential further. Here, we discuss the recent progress on the enhancement of thermoelectric properties in Indium Selenides by increasing chemical potential.
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60
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Liang L, Li K, Xiao C, Fan S, Liu J, Zhang W, Xu W, Tong W, Liao J, Zhou Y, Ye B, Xie Y. Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device. J Am Chem Soc 2015; 137:3102-8. [DOI: 10.1021/jacs.5b00021] [Citation(s) in RCA: 122] [Impact Index Per Article: 13.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Affiliation(s)
- Lin Liang
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Kun Li
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Chong Xiao
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Shaojuan Fan
- State Key Laboratory of Particle Detection and Electronics, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Jiao Liu
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Wenshuai Zhang
- State Key Laboratory of Particle Detection and Electronics, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Wenhui Xu
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Wei Tong
- High
Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, Anhui 230031, P.R. China
| | - Jiaying Liao
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yingying Zhou
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Bangjiao Ye
- State Key Laboratory of Particle Detection and Electronics, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science & Technology of China, Hefei, Anhui 230026, P. R. China
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61
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Chen H, Lin H, Lin ZX, Shen JN, Chen L, Wu LM. Superionic adjustment leading to weakly temperature-dependent ZT values in bulk thermoelectrics. Inorg Chem 2015; 54:867-71. [PMID: 25418200 DOI: 10.1021/ic502102e] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Thermoelectric (TE) materials are of worldwide interest for energy sustainability through direct waste-heat-to-electricity conversion. Practically, a TE power generator requires a large working temperature gradient; to achieve high efficiency, key TE materials with high ZT values are necessary and, furthermore, their ZT values should decline as little as possible over the imposed temperature range. Unfortunately, sharp ZT declines in all of the known materials are inevitable. Here we found the bulk superionic α-Ag(1-x)CuSe material exhibits unusual weakly temperature-dependent ZT values in the range of 480-693 K with the smallest ZT-T slope known to date. These result from the Seebeck coefficient balance of the countercontributions of holes and electrons and the weakly temperature-dependent thermal conductivity.
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Affiliation(s)
- Hong Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, People's Republic of China
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62
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Sun Y, Gao S, Lei F, Xiao C, Xie Y. Ultrathin two-dimensional inorganic materials: new opportunities for solid state nanochemistry. Acc Chem Res 2015; 48:3-12. [PMID: 25489751 DOI: 10.1021/ar500164g] [Citation(s) in RCA: 231] [Impact Index Per Article: 25.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
CONSPECTUS: The ultimate goal of solid state chemistry is to gain a clear correlation between atomic, defect, and electronic structure and intrinsic properties of solid state materials. Solid materials can generally be classified as amorphous, quasicrystalline, and crystalline based on their atomic arrangement, in which crystalline materials can be further divided into single crystals, microcrystals, and nanocrystals. Conventional solid state chemistry mainly focuses on studying single crystals and microcrystals, while recently nanocrystals have become a hot research topic in the field of solid state chemistry. As more and more nanocrystalline materials have been artificially fabricated, the solid state chemistry for studying those nanosolids has become a new subdiscipline: solid state nanochemistry. However, solid state nanochemistry, usually called "nanochemistry" for short, primarily studies the microstructures and macroscopic properties of a nanomaterial's aggregation states. Due to abundant microstructures in the aggregation states, it is only possible to build a simple but imprecise correlation between the microscopic morphology and the macroscopic properties of the nanostructures. Notably, atomically thin two-dimensional inorganic materials provide an ideal platform to establish clear structure-property relationships in the field of solid state nanochemistry, thanks to their homogeneous dispersion without the assistance of a capping ligand. In addition, their atomic structures including coordination number, bond length, and disorder degree of the examined atoms can be clearly disclosed by X-ray absorption fine structure spectroscopy. Also, their more exposed interior atoms would inevitably induce the formation of various defects, which would have a non-negligible effect on their physicochemical properties. Based on the obtained atomic and defect structural characteristics, density-functional calculations are performed to study their electronic structures. Then, after the properties of the individual ultrathin two-dimensional materials or their assembled highly oriented thin film-based nanodevices are measured, the explicit relationship between atomic, defect, and electronic structure and intrinsic properties could be established. In this Account, we focus on our recent advances in the field of solid state nanochemistry, including atomic structure characterization of ultrathin two-dimensional inorganic materials by X-ray absorption fine structure spectroscopy, characterization of their different types of structural defects by positron annihilation spectra and electron spin resonance, and investigation of their electronic structure by density-functional calculations. In addition, we summarize the close correlation between atomic, defect, and electronic structure variations and the optoelectronic, electrical, magnetic, and thermal properties of ultrathin two-dimensional materials. Finally, we also propose the major challenges and opportunities that face solid state nanochemistry. We believe that all the past achievements in ultrathin two-dimensional materials could bring new opportunities for solid state nanochemistry.
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Affiliation(s)
- Yongfu Sun
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Shan Gao
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Fengcai Lei
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Chong Xiao
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Yi Xie
- Hefei National Laboratory for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
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63
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Han G, Chen ZG, Yang L, Hong M, Drennan J, Zou J. Rational design of Bi2Te3 polycrystalline whiskers for thermoelectric applications. ACS APPLIED MATERIALS & INTERFACES 2015; 7:989-995. [PMID: 25539405 DOI: 10.1021/am5078528] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Bi2Te3 polycrystalline whiskers consisting of interconnected nanoplates have been synthesized through chemical transformation from In2Te3 polycrystalline whisker templates assembled by nanoparticles. The synthesized Bi2Te3 whiskers preserve the original one-dimensional morphology of the In2Te3, while the In2Te3 nanoparticles can be transformed into the Bi2Te3 thin nanoplates, accompanied by the formation of high-density interfaces between nanoplates. The hot-pressed nanostructures consolidated from Bi2Te3 polycrystalline whiskers at 400 °C demonstrate a promising figure of merit (ZT) of 0.71 at 400 K, which can be attributed to their low thermal conductivity and relatively high electrical conductivity. The small nanoparticles inherited from the polycrystalline whiskers and high-density nanoparticle interfaces in the hot-pressed nanostructures contribute to the significant reduction of thermal conductivity. This study provides a rational chemical transformation approach to design and synthesize polycrystalline microstructures for enhanced thermoelectric performances.
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Affiliation(s)
- Guang Han
- Materials Engineering and ‡Centre for Microscopy and Microanalysis, The University of Queensland , Brisbane QLD 4072, Australia
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64
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Guin SN, Biswas K. Temperature driven p–n–p type conduction switching materials: current trends and future directions. Phys Chem Chem Phys 2015; 17:10316-25. [DOI: 10.1039/c4cp06088a] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Abstract
In the present perspective, we highlight the key concepts, present the current fundamental understanding and show the latest developments in the field of p–n–p type conduction switching materials. Near room temperature p–n–p type conduction switching can have potential applications in diodes or transistor devices that operate reversibly upon temperature or voltage change.
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Affiliation(s)
- Satya N. Guin
- New Chemistry Unit
- Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR)
- Bangalore 560 064
- India
| | - Kanishka Biswas
- New Chemistry Unit
- Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR)
- Bangalore 560 064
- India
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65
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Liu Y, Cheng H, Lyu M, Fan S, Liu Q, Zhang W, Zhi Y, Wang C, Xiao C, Wei S, Ye B, Xie Y. Low overpotential in vacancy-rich ultrathin CoSe2 nanosheets for water oxidation. J Am Chem Soc 2014; 136:15670-5. [PMID: 25310506 DOI: 10.1021/ja5085157] [Citation(s) in RCA: 480] [Impact Index Per Article: 48.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
According to Yang Shao-Horn's principle, CoSe2 is a promising candidate as an efficient, affordable, and sustainable alternative electrocatalyst for the oxygen evolution reaction, owing to its well-suited electronic configuration of Co ions. However, the catalytic efficiency of pure CoSe2 is still far below what is expected, because of its poor active site exposure yield. Herein, we successfully overcome the disadvantage of insufficient active sites in bulk CoSe2 by reducing its thickness into the atomic scale rather than any additional modification (such as doping or hybridizing with graphene or noble metals). The positron annihilation spectrometry and XAFS spectra provide clear evidence that a large number of VCo″ vacancies formed in the ultrathin nanosheets. The first-principles calculations reveal that these VCo″ vacancies can serve as active sites to efficiently catalyze the oxygen evolution reaction, manifesting an OER overpotential as low as 0.32 V at 10 mA cm(-2) in pH 13 medium, which is superior to the values for its bulk counterparts as well as those for the most reported Co-based electrocatalysts. Considering the outstanding performance of the simple, unmodified ultrathin CoSe2 nanosheets as the only catalyst, further improvement of the catalytic activity is expected when various strategies of doping or hybridizing are used. These results not only demonstrate the potential of a notable, affordable, and earth-abundant water oxidation electrocatalyst based on ultrathin CoSe2 nanosheets but also open up a promising avenue into the exploration of excellent active and durable catalysts toward replacing noble metals for oxygen electrocatalysis.
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Affiliation(s)
- Youwen Liu
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science & Technology of China , Hefei, Anhui 230026, People's Republic of China
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66
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Lin H, Chen H, Shen JN, Chen L, Wu LM. Chemical Modification and Energetically Favorable Atomic Disorder of a Layered Thermoelectric Material TmCuTe2Leading to High Performance. Chemistry 2014; 20:15401-8. [DOI: 10.1002/chem.201404453] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2014] [Indexed: 11/12/2022]
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67
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Guin SN, Pan J, Bhowmik A, Sanyal D, Waghmare UV, Biswas K. Temperature Dependent Reversible p–n–p Type Conduction Switching with Colossal Change in Thermopower of Semiconducting AgCuS. J Am Chem Soc 2014; 136:12712-20. [DOI: 10.1021/ja5059185] [Citation(s) in RCA: 102] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
| | | | | | - Dirtha Sanyal
- Variable Energy Cyclotron Centre, 1/AF Bidhannagar, Kolkata 700064, India
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68
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Zhou B, Xing Y, Miao S, Li M, Zhang WH, Li C. Synthesis and Characterization of Ag8(Ge1−x,Snx)(S6−y,Sey) Colloidal Nanocrystals. Chemistry 2014; 20:12426-31. [DOI: 10.1002/chem.201404220] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2014] [Indexed: 11/06/2022]
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69
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Ji S, Shi T, Qiu X, Zhang J, Xu G, Chen C, Jiang Z, Ye C. A route to phase controllable Cu2ZnSn(S(1-x)Se(x))4 nanocrystals with tunable energy bands. Sci Rep 2014; 3:2733. [PMID: 24061108 PMCID: PMC3781399 DOI: 10.1038/srep02733] [Citation(s) in RCA: 70] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2013] [Accepted: 09/02/2013] [Indexed: 11/09/2022] Open
Abstract
Cu2ZnSn(S1−xSex)4 nanocrystals are an emerging family of functional materials with huge potential of industrial applications, however, it is an extremely challenging task to synthesize Cu2ZnSn(S1−xSex)4 nanocrystals with both tunable energy band and phase purity. Here we show that a green and economic route could be designed for the synthesis of Cu2ZnSn(S1−xSex)4 nanocrystals with bandgap tunable in the range of 1.5–1.12 eV. Consequently, conduction band edge shifted from −3.9 eV to −4.61 eV (relative to vacuum energy) is realized. The phase purity of Cu2ZnSn(S1−xSex)4 nanocrystals is substantiated with in-depth combined optical and structural characterizations. Electrocatalytic and thermoelectric performances of Cu2ZnSn(S1−xSex)4 nanocrystals verify their superior activity to replace noble metal Pt and materials containing heavy metals. This green and economic route will promote large-scale application of Cu2ZnSn(S1−xSex)4 nanocrystals as solar cell materials, electrocatalysts, and thermoelectric materials.
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Affiliation(s)
- Shulin Ji
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Technology, Institute of Solid State Physics, and Key Laboratory of New Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, P. R. China
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70
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Magnetocaloric effects in a freestanding and flexible graphene-based superlattice synthesized with a spatially confined reaction. Nat Commun 2014; 5:3960. [DOI: 10.1038/ncomms4960] [Citation(s) in RCA: 64] [Impact Index Per Article: 6.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2014] [Accepted: 04/25/2014] [Indexed: 11/08/2022] Open
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71
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Xiao C, Li Z, Li K, Huang P, Xie Y. Decoupling interrelated parameters for designing high performance thermoelectric materials. Acc Chem Res 2014; 47:1287-95. [PMID: 24517646 DOI: 10.1021/ar400290f] [Citation(s) in RCA: 42] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
The world's supply of fossil fuels is quickly being exhausted, and the impact of their overuse is contributing to both climate change and global political unrest. In order to help solve these escalating problems, scientists must find a way to either replace combustion engines or reduce their use. Thermoelectric materials have attracted widespread research interest because of their potential applications as clean and renewable energy sources. They are reliable, lightweight, robust, and environmentally friendly and can reversibly convert between heat and electricity. However, after decades of development, the energy conversion efficiency of thermoelectric devices has been hovering around 10%. This is far below the theoretical predictions, mainly due to the interdependence and coupling between electrical and thermal parameters, which are strongly interrelated through the electronic structure of the materials. Therefore, any strategy that balances or decouples these parameters, in addition to optimizing the materials' intrinsic electronic structure, should be critical to the development of thermoelectric technology. In this Account, we discuss our recently developed strategies to decouple thermoelectric parameters for the synergistic optimization of electrical and thermal transport. We first highlight the phase transition, which is accompanied by an abrupt change of electrical transport, such as with a metal-insulator and semiconductor-superionic conductor transition. This should be a universal and effective strategy to optimize the thermoelectric performance, which takes advantage of modulated electronic structure and critical scattering across phase transitions to decouple the power factor and thermal conductivity. We propose that solid-solution homojunction nanoplates with disordered lattices are promising thermoelectric materials to meet the "phonon glass electron crystal" approach. The formation of a solid solution, coupled with homojunctions, allows for synergistically enhanced thermoelectric properties. This occurs through a significant reduction of thermal conductivity, without the deterioration of thermopower and electrical conductivity. In addition, we introduce the concept of spin entropy in wide band gap semiconductor nanocrystals, which acts to fully disentangle the otherwise interconnected quantities for synergistically optimized thermoelectric performance. Finally, we discuss a new concept we developed that is based on an ultrathin-nanosheet composite that we fabricated from ultrathin nanosheets of atomic thickness. These retain the original strong two-dimensional electron gas (2DEG) and allow for decoupled optimization of the three thermoelectric parameters, which improves thermoelectric performance.
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Affiliation(s)
- Chong Xiao
- Hefei National Laboratory
for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Zhou Li
- Hefei National Laboratory
for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Kun Li
- Hefei National Laboratory
for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Pengcheng Huang
- Hefei National Laboratory
for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
| | - Yi Xie
- Hefei National Laboratory
for Physical Sciences at the Microscale and Collaborative Innovation Center of Chemistry for Energy Materials, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
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72
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73
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Guin SN, Chatterjee A, Biswas K. Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping. RSC Adv 2014. [DOI: 10.1039/c4ra00969j] [Citation(s) in RCA: 39] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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74
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Goto Y, Naito F, Sato R, Yoshiyasu K, Itoh T, Kamihara Y, Matoba M. Enhanced Thermoelectric Figure of Merit in Stannite–Kuramite Solid Solutions Cu2+xFe1–xSnS4–y (x = 0–1) with Anisotropy Lowering. Inorg Chem 2013; 52:9861-6. [PMID: 23931285 DOI: 10.1021/ic401310c] [Citation(s) in RCA: 27] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Yosuke Goto
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
| | - Fumihiko Naito
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
| | - Rina Sato
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
| | - Keigo Yoshiyasu
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
| | - Takanori Itoh
- Quality Management
Group, AGC Seimichemical Company, Ltd.,
3-2-10 Chigasaki,
Chigasaki City, Kanagawa 253-8585, Japan
| | - Yoichi Kamihara
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
| | - Masanori Matoba
- Department of Applied Physics
and Physico-Informatics, Faculty of Science and Technology, Keio University, 3-14-1 Hiyoshi, Yokohama 223-8522,
Japan
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75
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Guan M, Xiao C, Zhang J, Fan S, An R, Cheng Q, Xie J, Zhou M, Ye B, Xie Y. Vacancy Associates Promoting Solar-Driven Photocatalytic Activity of Ultrathin Bismuth Oxychloride Nanosheets. J Am Chem Soc 2013; 135:10411-7. [DOI: 10.1021/ja402956f] [Citation(s) in RCA: 943] [Impact Index Per Article: 85.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
| | | | | | | | | | | | | | - Min Zhou
- Institute of Physics & IMN MacroNano, Ilmenau University of Technology, 98693 Ilmenau, Germany
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76
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Synthesis of Wurtzite Cu2ZnGeSe4Nanocrystals and their Thermoelectric Properties. Chem Asian J 2013; 8:2383-7. [DOI: 10.1002/asia.201300425] [Citation(s) in RCA: 21] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2013] [Indexed: 11/07/2022]
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77
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Pan L, Bérardan D, Dragoe N. High Thermoelectric Properties of n-Type AgBiSe2. J Am Chem Soc 2013; 135:4914-7. [DOI: 10.1021/ja312474n] [Citation(s) in RCA: 92] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
Affiliation(s)
- Lin Pan
- Institut de Chimie Moléculaire
et des Matériaux d’Orsay, Université Paris-Sud, UMR 8182, Orsay F-91405, France, and CNRS, Orsay F-91405, France
| | - David Bérardan
- Institut de Chimie Moléculaire
et des Matériaux d’Orsay, Université Paris-Sud, UMR 8182, Orsay F-91405, France, and CNRS, Orsay F-91405, France
| | - Nita Dragoe
- Institut de Chimie Moléculaire
et des Matériaux d’Orsay, Université Paris-Sud, UMR 8182, Orsay F-91405, France, and CNRS, Orsay F-91405, France
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78
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Osters O, Blazek G, Nilges T. Comments on Peierls-distorted Indium Chains in In4Se3-x. Z Anorg Allg Chem 2013. [DOI: 10.1002/zaac.201200534] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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79
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Xu H, Chen G, Jin R, Chen D, Pei J, Wang Y. Electrical transport properties of microwave-synthesized Bi2Se3−xTex nanosheet. CrystEngComm 2013. [DOI: 10.1039/c3ce40296g] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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