Cyano-Functionalized Bithiophene Imide-Based n-Type Polymer Semiconductors: Synthesis, Structure-Property Correlations, and Thermoelectric Performance

Recent Developments of n-Type Organic Thermoelectric Materials: Influence of Structure Modification on Molecule Arrangement and Solution Processing

Organic semiconductor (OSCs) thermoelectric materials have been studied widely due to their low thermal conductivity and solution processing characteristics. Currently, the high conductivity (up to 1000 s cm^-1 ) has boosted the performance of p-type organic thermoelectric materials substantially. In contrast, the development of n-type organic thermoelectric materials is still limited by their low mobility, inferior air stability, and poor doping efficiency, which is relevant to the molecule structure and dopant dispersion. Herein, the recent development of n-type organic thermoelectric materials was reviewed with an emphasis on molecule structure modification and solution processing. Methods for optimizing conjugate structure were summarized from the effects of conjugated backbone modification and side chains diversification on molecular stacking. The primary n-type dopants were also summarized briefly. Especially, the role of solution aggregation controlling on film preparation and properties was given special attention. Additionally, the emergence of organic diradicals with low lowest unoccupied molecular orbital energy level and no doping was introduced, which shows great potential in n-type organic thermoelectric materials. All these endeavors have led to the development of n-type OSCs materials. This Review is aimed at illustrating the state-of-the-art progress and providing some guideline for the design of organic thermoelectric materials in the future.

3,4,5-Trimethoxy Substitution on an N-DMBI Dopant with New N-Type Polymers: Polymer-Dopant Matching for Improved Conductivity-Seebeck Coefficient Relationship

Achieving high electrical conductivity and thermoelectric power factor simultaneously for n-type organic thermoelectrics is still challenging. By constructing two new acceptor-acceptor n-type conjugated polymers with different backbones and introducing the 3,4,5-trimethoxyphenyl group to form the new n-type dopant 1,3-dimethyl-2-(3,4,5-trimethoxyphenyl)-2,3-dihydro-1H-benzo[d]imidazole (TP-DMBI), high electrical conductivity of 11 S cm^-1 and power factor of 32 μW m^-1  K^-2 are achieved. Calculations using Density Functional Theory show that TP-DMBI presents a higher singly occupied molecular orbital (SOMO) energy level of -1.94 eV than that of the common dopant 4-(1, 3-dimethyl-2, 3-dihydro-1H-benzoimidazol-2-yl) phenyl) dimethylamine (N-DMBI) (-2.36 eV), which can result in a larger offset between the SOMO of dopant and lowest unoccupied molecular orbital (LUMO) of n-type polymers, though that effect may not be dominant in the present work. The doped polymer films exhibit higher Seebeck coefficient and power factor than films using N-DMBI at the same doping levels or similar electrical conductivity levels. Moreover, TP-DMBI doped polymer films offer much higher electron mobility of up to 0.53 cm²  V^-1  s^-1 than films with N-DMBI doping, demonstrating the potential of TP-DMBI, and 3,4,5-trialkoxy DMBIs more broadly, for high performance n-type organic thermoelectrics.

Fused Bithiophene Imide Dimer-Based n-Type Polymers for High-Performance Organic Electrochemical Transistors

The development of n-type organic electrochemical transistors (OECTs) lags far behind their p-type counterparts. In order to address this dilemma, we report here two new fused bithiophene imide dimer (f-BTI2)-based n-type polymers with a branched methyl end-capped glycol side chain, which exhibit good solubility, low-lying LUMO energy levels, favorable polymer chain orientation, and efficient ion transport property, thus yielding a remarkable OECT electron mobility (μ_e ) of up to ≈10^-2  cm²  V^-1  s^-1 and volumetric capacitance (C*) as high as 443 F cm^-3 , simultaneously. As a result, the f-BTI2TEG-FT-based OECTs deliver a record-high maximum geometry-normalized transconductance of 4.60 S cm^-1 and a maximum μC* product of 15.2 F cm^-1  V^-1  s^-1 . The μC* figure of merit is more than one order of magnitude higher than that of the state-of-the-art n-type OECTs. The emergence of f-BTI2TEG-FT brings a new paradigm for developing high-performance n-type polymers for low-power OECT applications.

n-Type Organic and Polymeric Semiconductors Based on Bithiophene Imide Derivatives

ConspectusIn the last three decades, p-type (hole-transporting) organic and polymeric semiconductors have achieved great success in terms of materials diversity and device performance, while the development of n-type (electron-transporting) analogues greatly lags behind, which is limited by the scarcity of highly electron-deficient building blocks with compact geometry and good solubility. However, such n-type semiconductors are essential due to the existence of the p-n junction and a complementary metal oxide semiconductor (CMOS)-like circuit in organic electronic devices. Among various electron-deficient building blocks, imide-functionalized arenes, such as naphthalene diimide (NDI) and perylene diimide (PDI), have been proven to be the most promising ones for developing n-type organic and polymeric semiconductors. Nevertheless, phenyl-based NDI and PDI lead to sizable steric hindrance with neighboring (hetero)arenes and a high degree of backbone distortion in the resultant semiconductors, which greatly limits their microstructural ordering and charge transport. To attenuate the steric hindrance associated with NDI and PDI, a novel imide-functionalized heteroarene, bithiophene imide (BTI), was designed; however, the BTI-based semiconductors suffer from high-lying frontier molecular orbital (FMO) energy levels as a result of their electron-rich thiophene framework and monoimide group, which is detrimental to n-type performance.In this Account, we review a series of BTI derivatives developed via various strategies, including ring fusion, thiazole substitution, fluorination, cyanation, and chalcogen substitution, and elaborate the synthesis routes designed to overcome the synthesis challenges due to their high electron deficiency. After structural optimization, these BTI derivatives can not only retain the advantages of good solubility, a planar backbone, and small steric hindrance inherited from BTI but also have greatly suppressed FMO levels. These novel building blocks enable the construction of a great number of n-type organic and polymeric semiconductors, particularly acceptor-acceptor (or all-acceptor)-type polymers, with remarkable performance in various devices, including electron mobility (μ_e) of 3.71 cm² V^-1 s^-1 in organic thin-film transistors (OTFTs), a power conversion efficiency (PCE) of 15.2% in all-polymer solar cells (all-PSCs), a PCE of 20.8% in inverted perovskite solar cells (PVSCs), electrical conductivity (σ) of 0.34 S cm^-1 and a power factor (PF) of 1.52 μW m^-1 K^-2 in self-doped diradicals, and σ of 23.3 S cm^-1 and a PF of ∼10 μW m^-1 K^-2 in molecularly n-doped polymers, all of which are among the best values in each type of device. The structure-property-device performance correlations of these n-type semiconductors are elucidated. The design strategy and synthesis of these novel BTI derivatives provide important information for developing highly electron-deficient building blocks with optimized physicochemical properties. Finally, we offer our insights into the further development of BTI derivatives and semiconductors built from them.

Completely non-fused electron acceptor with 3D-interpenetrated crystalline structure enables efficient and stable organic solar cell

Non-fullerene acceptors (NFAs) based on non-fused conjugated structures have more potential to realize low-cost organic photovoltaic (OPV) cells. However, their power conversion efficiencies (PCEs) are much lower than those of the fused-ring NFAs. Herein, a new bithiophene-based non-fused core (TT-Pi) featuring good planarity as well as large steric hindrance was designed, based on which a completely non-fused NFA, A4T-16, was developed. The single-crystal result of A4T-16 reveals that a three-dimensional interpenetrating network can be formed due to the compact π–π stacking between the adjacent end-capping groups. A high PCE of 15.2% is achieved based on PBDB-TF:A4T-16, which is the highest value for the cells based on the non-fused NFAs. Notably, the device retains ~84% of its initial PCE after 1300 h under the simulated AM 1.5 G illumination (100 mW cm⁻²). Overall, this work provides insight into molecule design of the non-fused NFAs from the aspect of molecular geometry control.

Non-fullerene acceptors based on non-fused conjugated structures have potential for realizing low-cost organic photovoltaic cells, owing to its synthetic simplicity. Here, the authors develop a non-fused molecule with a three-dimensional interpenetrating network and compact π-π stacking, which is highly suitable for PV applications.

A Distannylated Monomer of a Strong Electron-Accepting Organoboron Building Block: Enabling Acceptor-Acceptor-Type Conjugated Polymers for n-Type Thermoelectric Applications

Acceptor-acceptor (A-A) copolymerization is an effective strategy to develop high-performance n-type conjugated polymers. However, the development of A-A type conjugated polymers is challenging due to the synthetic difficulty. Herein, a distannylated monomer of strong electron-deficient double B←N bridged bipyridine (BNBP) unit is readily synthesized and used to develop A-A type conjugated polymers by Stille polycondensation. The resulting polymers show ultralow LUMO energy levels of -4.4 eV, which is among the lowest value reported for organoboron polymers. After n-doping, the resulting polymers exhibit electric conductivity of 7.8 S cm^-1 and power factor of 24.8 μW m^-1  K^-2 . This performance is among the best for n-type polymer thermoelectric materials. These results demonstrate the great potential of A-A type organoboron polymers for high-performance n-type thermoelectrics.

n-Type organic semiconducting polymers: stability limitations, design considerations and applications

This review outlines the design strategies which aim to develop high performing n-type materials in the fields of organic thin film transistors (OTFT), organic electrochemical transistors (OECT) and organic thermoelectrics (OTE). Figures of merit for each application and the limitations in obtaining these are set out, and the challenges with achieving consistent and comparable measurements are addressed. We present a thorough discussion of the limitations of n-type materials, particularly their ambient operational instability, and suggest synthetic methods to overcome these. This instability originates from the oxidation of the negative polaron of the organic semiconductor (OSC) by water and oxygen, the potentials of which commonly fall within the electrochemical window of n-type OSCs, and consequently require a LUMO level deeper than ∼-4 eV for a material with ambient stability. Recent high performing n-type materials are detailed for each application and their design principles are discussed to explain how synthetic modifications can enhance performance. This can be achieved through a number of strategies, including utilising an electron deficient acceptor-acceptor backbone repeat unit motif, introducing electron-withdrawing groups or heteroatoms, rigidification and planarisation of the polymer backbone and through increasing the conjugation length. By studying the fundamental synthetic design principles which have been employed to date, this review highlights a path to the development of promising polymers for n-type OSC applications in the future.

Recent Progress on Addressing the Key Challenges in Organic Thermoelectrics

Compared with inorganic thermoelectric materials, organic thermoelectric (OTE) materials have attracted increasing attention due to their advantages of low toxicity, high mechanical flexibility, and large-scale solution processability. In the past few years, OTE materials have made remarkable progress in terms of their design, synthesis, and device performance. However, some challenges remain, including the low doping efficiency in n-type materials, poor doping stability with molecular dopants, and the largely reduced Seebeck coefficient after heavily doping, etc. All these factors hinder the further development of OTEs for commercial applications. In this Minireview, we highlight several key challenges during the development of OTEs and summarize recent understandings and efforts to address these challenges.

One-step synthesis of poly(methacrylate)-b-polyester via “one organocatalyst, two polymerizations”

In a “one organocatalyst, two polymerizations” system, triarylsulfonium hexafluorophosphate salt could spontaneously catalyze photo-ATRP and ROP. A well-defined PTMC-b-PMMA block copolymer was successfully synthesized in one-step.