Geometric and Electronic Structures of Terbium−Silicon Mixed Clusters (TbSin; 6 ≤ n ≤ 16)

Argon physisorption as structural probe for endohedrally doped silicon clusters

We report on an element-dependent critical size for argon physisorption at 80 K on transition-metal-doped silicon clusters. Argon does not attach to elemental silicon clusters but only to surface-located transition-metal atoms. Thus physisorption provides structural information. Specifically, the minimal cluster size for the formation of endohedral singly metal-doped silicon cages has been determined. The observed critical size for doubly doped silicon clusters indicates that larger caged molecules can be formed, eventually leading to the growth of metal-doped silicon nanorods.

Computational investigation of TiSin (n=2–15) clusters by the density-functional theory

The geometries, stabilities, and electronic properties of TiSin (n=2-15) clusters with different spin configurations have been systematically investigated by using density-functional theory approach at B3LYP/LanL2DZ level. According to the optimum TiSin clusters, the equilibrium site of Ti atom gradually moves from convex to surface, and to a concave site as the number of Si atom increases from 2 to 15. When n=12, the Ti atom in TiSi12 completely falls into the center of the Si outer frame, forming metal-encapsulated Si cages, which can be explained by using 16-electron rule. On the basis of the optimized geometries, various energetic properties are calculated for the most stable isomers of TiSin clusters, including the average binding energy, the highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gap, fragmentation energy, and the second-order difference of energy. It is found that at size n=6,8,12 the clusters are more stable than neighboring ones. According to the Mulliken charge population analysis, charges always transfer from Si atoms to Ti atom. Furthermore, the HOMO-LUMO gaps of the most stable TiSin clusters are usually smaller than those of Sin clusters.

Geometries, Stabilities, and Growth Patterns of the Bimetal Mo2-doped Sin (n = 9−16) Clusters: A Density Functional Investigation

The behaviors of the bimetal Mo-Mo doped cagelike silicon clusters Mo2Sin at the size of n=9-16 have been investigated systematically with the density functional approach. The growth-pattern behaviors, relative stabilities, and charge-transfer of these clusters are presented and discussed. The optimized geometries reveal that the dominant growth patterns of the bimetal Mo-Mo doped on opened cagelike silicon clusters (n=9-13) are based on pentagon prism MoSi10 and hexagonal prism MoSi12 clusters, while the Mo2 encapsulated Sin(n=14-16) frames are dominant growth behaviors for the large-sized clusters. The doped Mo2 dimer in the Sin frames is dissociated under the interactions of the Mo2 and Sin frames which are examined in term of the calculated Mo-Mo distance. The calculated fragmentation energies manifest that the remarkable local maximums of stable clusters are Mo2-doped Sin with n=10 and 12; the obtained relative stabilities exhibit that the Mo2-doped Si10 cluster is the most stable species in all different sized clusters. Natural population analysis shows that the charge-transfer phenomena appearing in the Mo2-doped Sin clusters are analogous to the single transition metal Re or W doped silicon clusters. In addition, the properties of frontier orbitals of Mo2-doped Sin (n=10 and 12) clusters show that the Mo2Si10 and Mo2Si12 isomers have enhanced chemical stabilities because of their larger HOMO-LUMO gaps. Interestingly, the geometry of the most stable Mo2Si9 cluster has the framework which is analogous to that of Ni2Ge9 cluster confirmed by recent experimental observation (Goicoechea, J. M.; Sevov, S. C. J. Am Chem. Soc. 2006, 128, 4155).

Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation

The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.

Photodissociation of Metal−Silicon Clusters: Encapsulated versus Surface-Bound Metal

Metal-silicon cluster cations of the form MSi(n)+ (M = Cu, Ag, Cr) are produced in a molecular beam with pulsed laser vaporization. These species are mass-selected in a reflectron time-of-flight spectrometer and studied with laser photodissociation at 532 and 355 nm. For the noble metals copper and silver, photodissociation of the n = 7 and 10 clusters proceeds primarily by the loss of metal atoms, indicating that the metal is not located within the interior of silicon cages, and that metal-silicon bonding is weaker than silicon-silicon bonding. Chromium-silicon clusters for n = 7 also lose primarily the metal atom, but at n = 15 and 16 these dissociate via the loss of silicon, producing smaller metal-silicon species. This behavior is consistent with stronger metal-silicon bonding and encapsulated metal structures, as suggested previously by theory. MSi6(+) cations are produced efficiently in all of these photodissociation processes, indicating that these species have enhanced stability compared to other small clusters. Improved values are obtained for the ionization potentials of Si7 and Si10.

Experimental and theoretical investigation on binary semiconductor clusters of Bi/Si, Bi/Ge, and Bi/Sn

Bi(m)M(n)- (M = Si, Ge, Sn) binary cluster anions are generated by using laser ablation on mixtures of Bi and M (M = Si, Ge, Sn) samples and studied by reflectron time-of-flight mass spectrometer (RTOF-MS) in the gas phase. Some magic number clusters are present in the mass spectra which indicate that they are in stable structures. For small anions (m + n < or = 6), their structures are investigated with the DFT method and the energetically lowest lying structures are obtained. For the binary anionic clusters with the same composition containing Si, Ge, and Sn, they share similar geometric and electronic structure in the small size except that BiSi3-, BiSi5-, Bi2Si2-, Bi2Si3-, and Bi4Sn2- are different for the lowest energetic structures, and the ground states for all the anions are in their lowest spin states. The calculated VDE (vertical detachment energy) and binding energy confirm the obviously magic number cluster of BiM4- (M = Si, Ge, Sn), which agrees with the experimental results.

Geometries and Electronic Properties of the Neutral and Charged Rare Earth Yb-Doped Sin (n = 1−6) Clusters: A Relativistic Density Functional Investigation

The neutral and charged YbSi(n) (n = 1-6) clusters considering different spin configurations have been systematically investigated by using the relativistic density functional theory with generalized gradient approximation. The total bonding energies, equilibrium geometries, Mulliken populations (MP), Hirshfeld charges (HC), fragmentation energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps are calculated and discussed. The optimized geometries indicate that the most stable YbSi(n) (n = 1-6) clusters keep basically the analogous frameworks as the low-lying Si(n)(+1) clusters, while the charged species deviate from their neutral counterparts, and that the doped Yb tends to occupy the substitutional site of the neutral and charged YbSi(n) isomers. The relative stabilities are investigated in terms of the calculated fragmentation energies, exhibiting enhanced stabilities for the remarkably stable neutral and charged YbSi2 and YbSi5 clusters. Furthermore, the calculated MP and HC values show that the charges of the neutral and charged YbSi(n) clusters transfer from the Yb atom to Si(n) atoms and the Yb atom acts as an electron donor, and that the f orbitals of the Yb atom in the neutral and charged YbSi(n) clusters behave as core without involvement in chemical bonding. The calculated HOMO-LUMO gaps indicate that the YbSi2 and YbSi4+ clusters have stronger chemical stabilities. Comparisons of the Yb-doped Si(n) (n = 1-6) with available theoretical results of transition-metal-doped silicon clusters are made. The growth pattern is investigated also.

A computational investigation of copper-doped germanium and germanium clusters by the density-functional theory

The geometries, stabilities, and electronic properties of Ge(n) and CuGe(n) (n = 2-13) clusters have been systematically investigated by using density-functional approach. According to optimized CuGe(n) geometries, growth patterns of Cu-capped Ge(n) or Cu-substituted Ge(n+1) clusters for the small- or middle-sized CuGe(n) clusters as well as growth patterns of Cu-concaved Ge(n) or Ge-capped CuGe(n-1) clusters for the large-sized CuGe(n) clusters are apparently dominant. The average atomic binding energies and fragmentation energies are calculated and discussed; particularly, the relative stabilities of CuGe10 and Ge10 are the strongest among all different sized CuGe(n) and Ge(n) clusters, respectively. These findings are in good agreement with the available experimental results on CoGe10- and Ge10 clusters. Consequently, unlike some transition metal (TM)Si12, the hexagonal prism CuGe12 is only low-lying structure; however, the basket-like structure is located as the lowest-energy structure. Different from some TM-doped silicon clusters, charge always transfers from copper to germanium atoms in all different sized clusters. Furthermore, the calculated highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gaps are obviously decreased when Cu is doped into the Ge(n) clusters, together with the decrease of HOMO-LUMO gaps, as the size of clusters increases. Additionally, the contribution of the doped Cu atom to bond properties and polarizabilities of the Ge(n) clusters is also discussed.

Geometries, stabilities, and electronic properties of different-sized ZrSin (n=1–16) clusters: A density-functional investigation

The ZrSi(n) (n=1-16) clusters with different spin configurations have been systematically investigated by using the density-functional approach. The total energies, equilibrium geometries, growth-pattern mechanisms, natural population analysis, etc., are discussed. The equilibrium structures of different-sized ZrSi(n) clusters can be determined by two evolution patterns. Theoretical results indicate that the most stable ZrSi(n) (n=1-7) geometries, except ZrSi3, keep the analogous frameworks as the lowest-energy or the second lowest-energy Si(n+1) clusters. However, for large ZrSi(n) (n=8-16) clusters, Zr atom obviously disturbs the framework of silicon clusters, and the localized position of the transition-metal (TM) Zr atom gradually varies from the surface insertion site to the concave site of the open silicon cage and to the encapsulated site of the sealed silicon cage. It should be mentioned that the lowest-energy sandwich-like ZrSi12 geometry is not a sealed structure and appears irregular as compared with other TM@Si12 (TM = Re,Ni). The growth patterns of ZrSi(n) (n=1-16) clusters are concerned showing the Zr-encapsulated structures as the favorable geometries. In addition, the calculated fragmentation energies of the ZrSi(n) (n=1-16) clusters manifest that the magic numbers of stabilities are 6, 8, 10, 14, and 16, and that the fullerene-like ZrSi16 is the most stable structure, which is in good agreement with the calculated atomic binding energies of ZrSi(n) (n=8-16) and with available experimental and theoretical results. Natural population analysis shows that the natural charge population of Zr atom in the most stable ZrSi(n) (n=1-16) structures exactly varies from positive to negative at the critical-sized ZrSi8 cluster; furthermore, the charge distribution around the Zr atom appears clearly covalent in character for the small- or middle-sized clusters and metallic in character for the large-sized clusters. Finally, the properties of frontier orbitals and polarizabilities of ZrSi(n) are also discussed.

Photoelectron spectroscopy of chromium-doped silicon cluster anions

The photoelectron spectra of chromium-doped silicon cluster anions, CrSi-(n), were measured over the size range, n=8-12. Their vertical detachment energies were measured to be 2.71, 2.88, 2.87, 2.95, and 3.18 eV, respectively. Our results support theoretical calculations by Khanna, Rao, and Jena [Phys. Rev. Lett. 89, 016803 (2002)] which found CrSi12 to be an enhanced stability (magic) cluster with its chromium atom encapsulated inside a silicon cage and with its magnetic moment completely quenched by the effects of the surrounding cage.

Structural and electronic properties of metal-encapsulated silicon clusters in a large size range

Structural and electronic properties of metal-doped silicon clusters MSi(n)s (M=W, Zr, Os, Pt, Co, etc.) in a large size range of 8<or=n<or=20 are investigated via ab initio calculations. Different from a recent experimental suggestion that the metal atom is endohedral in MSi(n), we reveal that the formation of endohedral structure strongly depends on the size of the Si(n) cluster. Two novel structures of the chemically stable endohedral species are manifested. The suitable M@Si(n) building blocks of self-assembly materials vary in the range of 10<or=n<or=16. The thermodynamical magic numbers are found to coincide with the chemical magic numbers for five clusters.