Nanoscale mapping of electrical resistivity and connectivity in graphene strips and networks

Nanoelectrical analysis of single molecules and atomic-scale materials at the solid/liquid interface

Evaluating the built-in functionality of nanomaterials under practical conditions is central for their proposed integration as active components in next-generation electronics. Low-dimensional materials from single atoms to molecules have been consistently resolved and manipulated under ultrahigh vacuum at low temperatures. At room temperature, atomic-scale imaging has also been performed by probing materials at the solid/liquid interface. We exploit this electrical interface to develop a robust electronic decoupling platform that provides precise information on molecular energy levels recorded using in situ scanning tunnelling microscopy/spectroscopy with high spatial and energy resolution in a high-density liquid environment. Our experimental findings, supported by ab initio electronic structure calculations and atomic-scale molecular dynamics simulations, reveal direct mapping of single-molecule structure and resonance states at the solid/liquid interface. We further extend this approach to resolve the electronic structure of graphene monolayers at atomic length scales under standard room-temperature operating conditions.

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Graphene oxide as a multi-functional p-dopant of transparent single-walled carbon nanotube films for optoelectronic devices

Modulation of electronic structures and surface properties of transparent carbon nanotube films is a challenging issue for their application in optoelectronic devices. Here, we report, for the first time, that graphene oxide (GO) nanosheets play the role of a p-doping agent and surface energy modifier of single-walled carbon nanotube (SWCNT)-based transparent conducting electrodes (TCEs). The deposition of highly oxidized, small-sized (i.e., diameter of less than 500 nm) GO nanosheets onto a SWCNT network film reduces the sheet resistance of the pristine film to 60% of its original value by p-doping. The modified TCEs exhibit an outstanding optoelectronic feature of high conductivity with high transparency. Moreover, the wettability of the electrode surface was also noticeably increased, which is advantageous for the solution-based processing of organic electronics. Furthermore, the organic photovoltaic (OPV) cells with the GO-doped SWCNT anodes on flexible substrates were successfully demonstrated. In stark contrast to a power conversion efficiency of 0.44% for pristine SWCNT anodes, GO-doped SWCNT anodes show a drastically enhanced power conversion efficiency of 2.7%.

Manipulating connectivity and electrical conductivity in metallic nanowire networks

Connectivity in metallic nanowire networks with resistive junctions is manipulated by applying an electric field to create materials with tunable electrical conductivity. In situ electron microscope and electrical measurements visualize the activation and evolution of connectivity within these networks. Modeling nanowire networks, having a distribution of junction breakdown voltages, reveals universal scaling behavior applicable to all network materials. We demonstrate how local connectivity within these networks can be programmed and discuss material and device applications.

Nanoscale investigation of charge transport at the grain boundaries and wrinkles in graphene film

The influence of grain boundaries and mechanical deformations in graphene film on the electric charge transport is investigated at nanoscale with conductive atomic force microscopy. Large area monolayer graphene samples were prepared by the chemical vapor deposition technique. Field emission scanning electron microscopy confirmed the formation of grain boundaries and the presence of wrinkles. The presence of the D-band in the Raman spectrum also indicated the existence of sharp defects such as grain boundaries. Extremely low conductivity was found at the grain boundaries and the wrinkled surface was also more resistive in comparison to the plain graphene surface. Many samples were experimented with to justify our findings by selecting different areas on the graphene surface. Uniform conductivity was found on grain boundary and wrinkle free graphene surfaces. We made channels of varied lengths by local anodic oxidation to confine the charge carrier to the smallest dimensions to better confirm the alteration in current due to grain boundaries and wrinkles. The experimental findings are discussed with reference to the implementation of graphene as transparent conductive electrode.

Direct visualization of large-area graphene domains and boundaries by optical birefringency

The boundaries between domains in single-layer graphene strongly influence its electronic properties. However, existing approaches for domain visualization, which are based on microscopy and spectroscopy, are only effective for domains that are less than a few micrometres in size. Here, we report a simple method for the visualization of arbitrarily large graphene domains by imaging the birefringence of a graphene surface covered with nematic liquid crystals. The method relies on a correspondence between the orientation of the liquid crystals and that of the underlying graphene, which we use to determine the boundaries of macroscopic domains.

Atomic-scale transport in epitaxial graphene

The high carrier mobility of graphene is key to its applications, and understanding the factors that limit mobility is essential for future devices. Yet, despite significant progress, mobilities in excess of the 2×10(5) cm(2) V(-1) s(-1) demonstrated in free-standing graphene films have not been duplicated in conventional graphene devices fabricated on substrates. Understanding the origins of this degradation is perhaps the main challenge facing graphene device research. Experiments that probe carrier scattering in devices are often indirect, relying on the predictions of a specific model for scattering, such as random charged impurities in the substrate. Here, we describe model-independent, atomic-scale transport measurements that show that scattering at two key defects--surface steps and changes in layer thickness--seriously degrades transport in epitaxial graphene films on SiC. These measurements demonstrate the strong impact of atomic-scale substrate features on graphene performance.