51
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Shen Z, Masuda T, Takagishi H, Ohdaira K, Shimoda T. Fabrication of high-quality amorphous silicon film from cyclopentasilane by vapor deposition between two parallel substrates. Chem Commun (Camb) 2015; 51:4417-20. [DOI: 10.1039/c4cc09026h] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.
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Affiliation(s)
- Zhongrong Shen
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Takashi Masuda
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Hideyuki Takagishi
- Japan Science and Technology Agency
- ERATO
- Shimoda Nano-Liquid Process Project
- Ishikawa 923-1292
- Japan
| | - Keisuke Ohdaira
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
| | - Tatsuya Shimoda
- School of Materials Science
- Japan Advanced Institute of Science and Technology
- Ishikawa 923-1292
- Japan
- Japan Science and Technology Agency
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52
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Sathasivam S, Arnepalli RR, Singh KK, Visser RJ, Blackman CS, Carmalt CJ. A solution based route to GaAs thin films from As(NMe2)3 and GaMe3 for solar cells. RSC Adv 2015. [DOI: 10.1039/c4ra13902j] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
The novel deposition of GaAs thin films on glass substrates from a solution based route involving the aerosol assisted chemical vapour deposition (AACVD) of As(NMe2)3 and GaMe3 dissolved in toluene is reported.
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Affiliation(s)
- Sanjayan Sathasivam
- Materials Chemistry Research Centre
- Department of Chemistry
- University College London
- London
- UK
| | | | | | | | | | - Claire J. Carmalt
- Materials Chemistry Research Centre
- Department of Chemistry
- University College London
- London
- UK
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53
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Wang Q, Wallis JD, Wu Y, Pilkington M. A structural investigation of novel thiophene-functionalized BEDT-TTF donors for application as organic field-effect transistors. CrystEngComm 2014. [DOI: 10.1039/c4ce01686f] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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54
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Abstract
Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.
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55
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Vengrenovich RD, Ivanskii BV, Yarema SV, Pan'ko II, Stasyk MO, Moskalyuk AV. Interrelations between technology for obtaining quantum dots and optoelectronic properties of semiconductors [Invited]. APPLIED OPTICS 2014; 53:B87-B93. [PMID: 24787222 DOI: 10.1364/ao.53.000b87] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2013] [Accepted: 12/16/2013] [Indexed: 06/03/2023]
Abstract
The mechanism and kinetics of growth of nanocrystals considered as quantum dots (those used as electronic blocks in optoelectronic devices) is investigated for the case when the growth and solving of them is controlled in parallel by diffusion (surface of volume) and by the rate of chemical reaction at surface of the nanocrystals (Wagner's mechanism of growth). It is shown that the total flow to and from the nanocrystal consists of two parts, viz. the diffusion and kinetic ones. Depending on the ratio x of the two parts of the total flow, the diffusion or Wagner's mechanism of growth predominates. For that, the size distribution function is determined for the specified x either by the curve corresponding to the generalized Chakraverty-Wagner distribution or from the generalized Lifshitz-Slyozov-Wagner distribution. Comparison of theoretically computed distributions with the experimentally obtained histograms is carried out.
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56
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Shin DY, Han JW, Chun S. The exothermic reaction route of a self-heatable conductive ink for rapid processable printed electronics. NANOSCALE 2014; 6:630-637. [PMID: 24253416 DOI: 10.1039/c3nr04645a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We report the exothermic reaction route and new capability of a self-heatable conductive ink (Ag2O and silver 2,2-dimethyloctanoate) in order to achieve both a low sintering temperature and electrical resistivity within a short sintering time for flexible printed electronics and display appliances. Unlike conventional conductive ink, which requires a costly external heating instrument for rapid sintering, self-heatable conductive ink by itself is capable of generating heat as high as 312 °C when its exothermic reaction is triggered at a temperature of 180 °C. This intensive exothermic reaction is found to result from the recursive reaction of the 2,2-dimethyloctanoate anion, which is thermally dissociated from silver 2,2-dimethyloctanoate, with silver oxide microparticles. Through this recursive reaction, a massive number of silver atoms are supplied from silver oxide microparticles, and the nucleation of silver atoms and the fusion of silver nanoparticles become the major source of heat. This exothermic reaction eventually realizes the electrical resistivity of self-heatable conductive ink as low as 27.5 μΩ cm within just 40 s by combining chemical annealing, which makes it suitable for the roll-to-roll printable electronics such as a flexible touch screen panel.
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Affiliation(s)
- Dong-Youn Shin
- Department of Graphic Arts Information Engineering, Pukyong National University, Yongdang-dong, Nam-gu, Busan, 608-739, Republic of Korea.
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57
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Cowley MJ, Huch V, Rzepa HS, Scheschkewitz D. Equilibrium between a cyclotrisilene and an isolable base adduct of a disilenyl silylene. Nat Chem 2013; 5:876-9. [DOI: 10.1038/nchem.1751] [Citation(s) in RCA: 99] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2013] [Accepted: 08/08/2013] [Indexed: 12/27/2022]
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58
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Schmidt D, Böhme U, Seidel J, Kroke E. Cyclopentasilane Si5H10: First single crystal X-ray structure of an oligosilane SixHy and thermal analysis with TG/MS. INORG CHEM COMMUN 2013. [DOI: 10.1016/j.inoche.2013.05.023] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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59
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Liu C, Li Y, Lee MV, Kumatani A, Tsukagoshi K. Self-assembly of semiconductor/insulator interfaces in one-step spin-coating: a versatile approach for organic field-effect transistors. Phys Chem Chem Phys 2013; 15:7917-33. [DOI: 10.1039/c3cp44715d] [Citation(s) in RCA: 52] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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60
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61
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Lee GH. Property analysis of polysilane precursors and applications for polysilicon. ANALYTICAL SCIENCE AND TECHNOLOGY 2012. [DOI: 10.5806/ast.2012.25.6.345] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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62
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Abstract
Inkjet printing of organic thin film transistors is an enabling technology for many applications requiring low cost electronics such as RFID tags, sensors, e-paper, and displays. This review summarizes the achievements and remaining challendges in the field. An all inkjet printed organic thin film transistor is feasible, but manufacturability needs to be improved. Often, a hybrid process in which only some layers are inkjet printed is used. Development of devices requires optimization of (1) ink chemistry, (2) inkjet process, (3) substrate ink interaction, and (4) new device structures. Several conducting, dielectric and semiconducting materials have been used to formulate ink. It appears that metal nanoparticle based conducting ink and PEDOT:PSS are widely used materials to fabricate source, drain and gate electrodes. PVPh is the most popular dielectric material for inkjet printing. To print semiconducting layer, both polymers and oligomers/small molecules are used. Many high performance organic semiconductors are p-type, but few n-type organic semiconductors show excellent performance. In addition to improved materials, challenges inherent in the inkjet process also need solutions. These are registration, alignment of the source,and drain with gate, resolution, reducing off-state current, and roll-to-roll processing.
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63
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Govindaraju T, Avinash MB. Two-dimensional nanoarchitectonics: organic and hybrid materials. NANOSCALE 2012; 4:6102-17. [PMID: 22782293 DOI: 10.1039/c2nr31167d] [Citation(s) in RCA: 74] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
Programmed molecular assemblies with molecular-level precision have always intrigued mankind in the quest to master the art of molecular engineering. In this regard, our review seeks to highlight the state of the art in supramolecular engineering. Herein we describe two-dimensional (2D) nanoarchitectonics of organic and organic-inorganic based hybrid materials. Molecular systems ranging from simpler hydrogen bonding driven bis-acylurea and cyclic dipeptide derivatives to complex peptoids, arylenes, cucurbiturils, biphenyls, organosilicons and organometallics, which involve a delicate interplay of multiple noncovalent interactions are discussed. These specifically chosen examples illustrate the molecular design principles and synthetic protocols to realize 2D nanosheets. The description also emphasizes the wide variety of functional properties and technological implications of these 2D nanomaterials besides an outlook for future progress.
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Affiliation(s)
- T Govindaraju
- Bioorganic Chemistry Laboratory (BCL), New Chemistry Unit (NCU), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
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64
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Abersfelder K, Russell A, Rzepa HS, White AJP, Haycock PR, Scheschkewitz D. Contraction and Expansion of the Silicon Scaffold of Stable Si6R6 Isomers. J Am Chem Soc 2012; 134:16008-16. [DOI: 10.1021/ja307344f] [Citation(s) in RCA: 70] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Affiliation(s)
- Kai Abersfelder
- Krupp-Chair of General and Inorganic
Chemistry, Saarland University, D-66125
Saarbrücken, Germany
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
| | - Adam Russell
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
| | - Henry S. Rzepa
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
| | - Andrew J. P. White
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
| | - Peter R. Haycock
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
| | - David Scheschkewitz
- Krupp-Chair of General and Inorganic
Chemistry, Saarland University, D-66125
Saarbrücken, Germany
- Department of Chemistry, Imperial College London, South Kensington Campus, London
SW7 2AZ, United Kingdom
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65
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P-5: Solution-Processed SiO2Films Using Hydrogenated Polysilane Based Liquid Materials. ACTA ACUST UNITED AC 2012. [DOI: 10.1889/1.2785260] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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66
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de Kergommeaux A, Faure-Vincent J, Pron A, de Bettignies R, Malaman B, Reiss P. Surface Oxidation of Tin Chalcogenide Nanocrystals Revealed by 119Sn–Mössbauer Spectroscopy. J Am Chem Soc 2012; 134:11659-66. [DOI: 10.1021/ja3033313] [Citation(s) in RCA: 79] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Antoine de Kergommeaux
- CEA Grenoble, INAC, UMR 5819
SPrAM (CEA/CNRS/UJF-Grenoble 1), Laboratoire d’Electronique Moléculaire, Organique et Hybride, 17 rue des
Martyrs, 38054 Grenoble cedex 9, France
- INES, CEA-DRT/LITEN/DTS/LMPV, Institut National de l’Energie Solaire, Le Bourget
du Lac, France
| | - Jérôme Faure-Vincent
- CEA Grenoble, INAC, UMR 5819
SPrAM (CEA/CNRS/UJF-Grenoble 1), Laboratoire d’Electronique Moléculaire, Organique et Hybride, 17 rue des
Martyrs, 38054 Grenoble cedex 9, France
| | - Adam Pron
- CEA Grenoble, INAC, UMR 5819
SPrAM (CEA/CNRS/UJF-Grenoble 1), Laboratoire d’Electronique Moléculaire, Organique et Hybride, 17 rue des
Martyrs, 38054 Grenoble cedex 9, France
- Faculty of Chemistry, Warsaw University of Technology, Noakowskiego 3 00664
Warszawa, Poland
| | - Rémi de Bettignies
- INES, CEA-DRT/LITEN/DTS/LMPV, Institut National de l’Energie Solaire, Le Bourget
du Lac, France
| | - Bernard Malaman
- Institut Jean
Lamour, Université de Lorraine,
UMR 7198, B.P. 70239,
54506 Vandoeuvre-les-Nancy Cedex, France
| | - Peter Reiss
- CEA Grenoble, INAC, UMR 5819
SPrAM (CEA/CNRS/UJF-Grenoble 1), Laboratoire d’Electronique Moléculaire, Organique et Hybride, 17 rue des
Martyrs, 38054 Grenoble cedex 9, France
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67
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68
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Stueger H, Mitterfellner T, Fischer R, Walkner C, Patz M, Wieber S. Partial Halogenation of Cyclic and Branched Perhydropentasilanes. Inorg Chem 2012; 51:6173-9. [DOI: 10.1021/ic300214y] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Harald Stueger
- Institute of Inorganic Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz,
Austria
| | - Thomas Mitterfellner
- Institute of Inorganic Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz,
Austria
| | - Roland Fischer
- Institute of Inorganic Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz,
Austria
| | - Christoph Walkner
- Institute of Inorganic Chemistry, Graz University of Technology, Stremayrgasse 9, A-8010 Graz,
Austria
| | - Matthias Patz
- Creavis, Technologies & Innovation, Evonik Industries AG, Paul Baumannstrasse 1, D-45764 Marl, Germany
| | - Stephan Wieber
- Creavis, Technologies & Innovation, Evonik Industries AG, Paul Baumannstrasse 1, D-45764 Marl, Germany
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69
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Stueger H, Mitterfellner T, Fischer R, Walkner C, Patz M, Wieber S. Selective Synthesis and Derivatization of Alkali Metal Silanides MSi(SiH3)3. Chemistry 2012; 18:7662-4. [DOI: 10.1002/chem.201201253] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2012] [Indexed: 11/08/2022]
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70
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Shen Z, Matsuki Y, Shimoda T. Selected Deposition of High-Quality Aluminum Film by Liquid Process. J Am Chem Soc 2012; 134:8034-7. [DOI: 10.1021/ja301956s] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Zhongrong Shen
- Japan Science and Technology Agency, ERATO, Shimoda Nano Liquid Process
Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
| | - Yasuo Matsuki
- Japan Science and Technology Agency, ERATO, Shimoda Nano Liquid Process
Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
- Yokkaichi Research Center, JSR Corporation, 100 Kawajiri-cho, Yokkaichi, Mie 510-8552,
Japan
| | - Tatsuya Shimoda
- Japan Science and Technology Agency, ERATO, Shimoda Nano Liquid Process
Project, 2-5-3 Asahidai, Nomi, Ishikawa 923-1211, Japan
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71
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Lam PT, Sugiyama A, Masuda T, Shimoda T, Otsuka N, Chi DH. Ab-initio study of intermolecular interaction and structure of liquid cyclopentasilane. Chem Phys 2012. [DOI: 10.1016/j.chemphys.2012.02.010] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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72
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Iyer GRS, Hobbie EK, Guruvenket S, Hoey JM, Anderson KJ, Lovaasen J, Gette C, Schulz DL, Swenson OF, Elangovan A, Boudjouk P. Solution-based synthesis of crystalline silicon from liquid silane through laser and chemical annealing. ACS APPLIED MATERIALS & INTERFACES 2012; 4:2680-2685. [PMID: 22545711 DOI: 10.1021/am300334p] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si(6)H(12)). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient postprocessing to produce crystalline silicon thin films.
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Affiliation(s)
- Ganjigunte R S Iyer
- Department of Physics and Department of Coatings and Polymeric Materials, North Dakota State University, Fargo, North Dakota 58102, USA
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73
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Torrisi F, Hasan T, Wu W, Sun Z, Lombardo A, Kulmala TS, Hsieh GW, Jung S, Bonaccorso F, Paul PJ, Chu D, Ferrari AC. Inkjet-printed graphene electronics. ACS NANO 2012; 6:2992-3006. [PMID: 22449258 DOI: 10.1021/nn2044609] [Citation(s) in RCA: 428] [Impact Index Per Article: 35.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.
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Affiliation(s)
- Felice Torrisi
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
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74
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Jeong S, Moon J. Low-temperature, solution-processed metal oxide thin film transistors. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c1jm14452a] [Citation(s) in RCA: 184] [Impact Index Per Article: 15.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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75
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Shin DY, Jung M, Chun S. Resistivity transition mechanism of silver salts in the next generation conductive ink for a roll-to-roll printed film with a silver network. ACTA ACUST UNITED AC 2012. [DOI: 10.1039/c2jm30198a] [Citation(s) in RCA: 31] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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76
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Ahn SH, Lee HJ, Kim GH. Polycaprolactone Scaffolds Fabricated with an Advanced Electrohydrodynamic Direct-Printing Method for Bone Tissue Regeneration. Biomacromolecules 2011; 12:4256-63. [DOI: 10.1021/bm201126j] [Citation(s) in RCA: 68] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Seung Hyun Ahn
- Department
of Mechanical Engineering, Bio/Nanofluidics Lab and ‡Department of Dental life science,
College of Dentistry, Chosun University, 375 Seosok-dong, Dong-gu, Gwangju 501-759, South Korea
| | - Hyeong Jin Lee
- Department
of Mechanical Engineering, Bio/Nanofluidics Lab and ‡Department of Dental life science,
College of Dentistry, Chosun University, 375 Seosok-dong, Dong-gu, Gwangju 501-759, South Korea
| | - Geun Hyung Kim
- Department
of Mechanical Engineering, Bio/Nanofluidics Lab and ‡Department of Dental life science,
College of Dentistry, Chosun University, 375 Seosok-dong, Dong-gu, Gwangju 501-759, South Korea
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77
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Weis S, Körmer R, Jank MPM, Lemberger M, Otto M, Ryssel H, Peukert W, Frey L. Conduction mechanisms and environmental sensitivity of solution-processed silicon nanoparticle layers for thin-film transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2011; 7:2853-2857. [PMID: 21866578 DOI: 10.1002/smll.201100703] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2011] [Revised: 06/17/2011] [Indexed: 05/31/2023]
Affiliation(s)
- Sebastian Weis
- University of Erlangen-Nuremberg, Cauerstrasse 6, Erlangen, Germany
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78
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Takesue M, Tomura T, Yamada M, Hata K, Kuwamoto S, Yonezawa T. Size of Elementary Clusters and Process Period in Silver Nanoparticle Formation. J Am Chem Soc 2011; 133:14164-7. [DOI: 10.1021/ja202815y] [Citation(s) in RCA: 81] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Masafumi Takesue
- Research and Development Center, Bando Chemical Industries, Ltd., Kobe 650-0047, Japan
| | - Takuya Tomura
- Research and Development Center, Bando Chemical Industries, Ltd., Kobe 650-0047, Japan
| | - Mitsuru Yamada
- Research and Development Center, Bando Chemical Industries, Ltd., Kobe 650-0047, Japan
| | - Katsuhiko Hata
- Research and Development Center, Bando Chemical Industries, Ltd., Kobe 650-0047, Japan
| | - Shigeo Kuwamoto
- Hyogo-Prefectural Synchrotron Radiation Nanotechnology Laboratory, Tatsuno 679-5165, Japan
| | - Tetsu Yonezawa
- Division of Materials Science and Engineering, Faculty of Engineering, Hokkaido University, Sapporo 060-8628, Japan
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79
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Okamoto H, Sugiyama Y, Nakano H. Synthesis and Modification of Silicon Nanosheets and Other Silicon Nanomaterials. Chemistry 2011; 17:9864-87. [DOI: 10.1002/chem.201100641] [Citation(s) in RCA: 138] [Impact Index Per Article: 10.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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80
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Shin DY. Fabrication of Metal Electrodes Based on the Self-Differentiation Technique Using the Novel High-and-Low Strategy. J Imaging Sci Technol 2011. [DOI: 10.2352/j.imagingsci.technol.2011.55.4.040303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2022]
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81
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Tobjörk D, Österbacka R. Paper electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2011; 23:1935-61. [PMID: 21433116 DOI: 10.1002/adma.201004692] [Citation(s) in RCA: 446] [Impact Index Per Article: 34.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2010] [Revised: 02/03/2011] [Indexed: 05/07/2023]
Abstract
Paper is ubiquitous in everyday life and a truly low-cost substrate. The use of paper substrates could be extended even further, if electronic applications would be applied next to or below the printed graphics. However, applying electronics on paper is challenging. The paper surface is not only very rough compared to plastics, but is also porous. While this is detrimental for most electronic devices manufactured directly onto paper substrates, there are also approaches that are compatible with the rough and absorptive paper surface. In this review, recent advances and possibilities of these approaches are evaluated and the limitations of paper electronics are discussed.
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Affiliation(s)
- Daniel Tobjörk
- Center for Functional Materials, Graduate School of Materials Research, Physics, Department of Natural Sciences, Åbo Akademi University, Turku, FI-20500, Finland
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82
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Kim MG, Kanatzidis MG, Facchetti A, Marks TJ. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing. NATURE MATERIALS 2011; 10:382-388. [PMID: 21499311 DOI: 10.1038/nmat3011] [Citation(s) in RCA: 372] [Impact Index Per Article: 28.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2010] [Accepted: 03/17/2011] [Indexed: 05/27/2023]
Abstract
The development of large-area, low-cost electronics for flat-panel displays, sensor arrays, and flexible circuitry depends heavily on high-throughput fabrication processes and a choice of materials with appropriate performance characteristics. For different applications, high charge carrier mobility, high electrical conductivity, large dielectric constants, mechanical flexibility or optical transparency may be required. Although thin films of metal oxides could potentially meet all of these needs, at present they are deposited using slow and equipment-intensive techniques such as sputtering. Recently, solution processing schemes with high throughput have been developed, but these require high annealing temperatures (T(anneal)>400 °C), which are incompatible with flexible polymeric substrates. Here we report combustion processing as a new general route to solution growth of diverse electronic metal oxide films (In(2)O(3), a-Zn-Sn-O, a-In-Zn-O, ITO) at temperatures as low as 200 °C. We show that this method can be implemented to fabricate high-performance, optically transparent transistors on flexible plastic substrates.
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Affiliation(s)
- Myung-Gil Kim
- Department of Chemistry and the Materials Research Center, Northwestern University 2145 Sheridan Road, Evanston, Illinois 60208, USA
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83
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Lee M, Jeon Y, Moon T, Kim S. Top-down fabrication of fully CMOS-compatible silicon nanowire arrays and their integration into CMOS Inverters on plastic. ACS NANO 2011; 5:2629-2636. [PMID: 21355599 DOI: 10.1021/nn102594d] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
A route to the top-down fabrication of highly ordered and aligned silicon nanowire (SiNW) arrays with degenerately doped source/drain regions from a bulk Si wafer is presented. In this approach, freestanding n- and p-SiNWs with an inverted triangular cross section are obtained using conventional photolithography, crystal orientation dependent wet etching, size reduction oxidation, and ion implantation doping. Based on these n- and p-SiNWs transferred onto a plastic substrate, simple SiNW-based complementary metal-oxide-semiconductor (CMOS) inverters are constructed for the possible applications of these SiNW arrays in integrated circuits on plastic. The static voltage transfer characteristic of the SiNW-based CMOS inverter exhibits a voltage gain of ∼9 V/V and a transition of 0.32 V at an operating voltage of 1.5 V with a full output voltage swing between 0 V and V(DD), and its mechnical bendability indicates good fatigue properties for potential applications of flexible electronics. This novel top-down approach is fully compatible with the current state-of-the-art Si-based CMOS technologies and, therefore, offers greater flexibility in device design for both high-performance and low-power functionality.
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Affiliation(s)
- Myeongwon Lee
- Department of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea
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84
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Ahn SA, Lee SH, Song YS, Lee GH. Synthesis and property analysis of hydropolysilanes for amorphous and polycrystalline silicon. ANALYTICAL SCIENCE AND TECHNOLOGY 2011. [DOI: 10.5806/ast.2011.24.2.105] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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85
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Lee JS, Kovalenko MV, Huang J, Chung DS, Talapin DV. Band-like transport, high electron mobility and high photoconductivity in all-inorganic nanocrystal arrays. NATURE NANOTECHNOLOGY 2011; 6:348-52. [PMID: 21516091 DOI: 10.1038/nnano.2011.46] [Citation(s) in RCA: 383] [Impact Index Per Article: 29.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2010] [Accepted: 03/08/2011] [Indexed: 05/20/2023]
Abstract
Flexible, thin-film electronic and optoelectronic devices typically involve a trade-off between performance and fabrication cost. For example, solution-based deposition allows semiconductors to be patterned onto large-area substrates to make solar cells and displays, but the electron mobility in solution-deposited semiconductor layers is much lower than in semiconductors grown at high temperatures from the gas phase. Here, we report band-like electron transport in arrays of colloidal cadmium selenide nanocrystals capped with the molecular metal chalcogenide complex In(2)Se(4)(2-), and measure electron mobilities as high as 16 cm(2) V(-1) s(-1), which is about an order of magnitude higher than in the best solution-processed organic and nanocrystal devices so far. We also use CdSe/CdS core-shell nanoparticles with In(2)Se(4)(2-) ligands to build photodetectors with normalized detectivity D* > 1 × 10(13) Jones (I Jones = 1 cm Hz(1/2) W(-1)), which is a record for II-VI nanocrystals. Our approach does not require high processing temperatures, and can be extended to different nanocrystals and inorganic surface ligands.
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Affiliation(s)
- Jong-Soo Lee
- Department of Chemistry and James Frank Institute, University of Chicago, Chicago, Illinois 60637, USA
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86
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Choi WS, Ha D, Park S, Kim T. Synthetic multicellular cell-to-cell communication in inkjet printed bacterial cell systems. Biomaterials 2011; 32:2500-7. [PMID: 21208654 DOI: 10.1016/j.biomaterials.2010.12.014] [Citation(s) in RCA: 35] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2010] [Accepted: 12/10/2010] [Indexed: 12/25/2022]
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87
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Kim BJ, Kim HJ, Yoon TS, Kim YS, Lee DH, Choi Y, Ryu BH, Lee HH. Solution processed IZTO thin film transistor on silicon nitride dielectric layer. J IND ENG CHEM 2011. [DOI: 10.1016/j.jiec.2010.12.003] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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88
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Shen Z, Li J, Matsuki Y, Shimoda T. Deposition of platinum patterns by a liquid process. Chem Commun (Camb) 2011; 47:9992-4. [DOI: 10.1039/c1cc12138c] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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89
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Kim GH, Ahn SH, Lee HJ, Lee S, Cho Y, Chun W. A new hybrid scaffold using rapid prototyping and electrohydrodynamic direct writing for bone tissue regeneration. ACTA ACUST UNITED AC 2011. [DOI: 10.1039/c1jm13712c] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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90
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Inkjet-Printed Organic Field-Effect Transistor by Using Composite Semiconductor Material of Carbon Nanoparticles and Poly(3-Hexylthiophene). JOURNAL OF NANOTECHNOLOGY 2011. [DOI: 10.1155/2011/142890] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Poly(3-hexylthiophene), P3HT, has been widely used in organic electronics as a semiconductor material. It suffers from the low carrier mobility characteristics. This limits P3HT to be employed in applications. Therefore, the blending semiconductor material, carbon nanoparticle (CNP), and P3HT, are developed and examined by inkjet-printing organic field-effect transistor technology in this work. The effective carrier mobility of fabricated OFETs can be enhanced by 8 folds with adding CNP and using O2plasma treatment. At the same time, the transconductance of fabricated OFETs is also raised by 5 folds. Based on the observations of SEM, XRD, and FTIR, these improvements are contributed to the local field induced by the formation of CNP/P3HT complexes. This observation presents an insight of the development in organic semiconductor materials. Moreover, this work also offers a low-cost and effective semiconductor material for inkjet-printing technology in the development of organic electronics.
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91
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Gibert M, Abellán P, Benedetti A, Puig T, Sandiumenge F, García A, Obradors X. Self-organized Ce(1-x)Gd(x)O(2-y) nanowire networks with very fast coarsening driven by attractive elastic interactions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2010; 6:2716-2724. [PMID: 21064087 DOI: 10.1002/smll.201001237] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Assembling arrays of ordered nanowires is a key objective for many of their potential applications. However, a lack of understanding and control of the nanowires' growth mechanisms limits their thorough development. In this work, an appealing new path towards self-organized epitaxial nanowire networks produced by high-throughput solution methods is reported. Two requisites are identified to generate the nanowires: a thermodynamic driving force for an unrestricted elongated equilibrium island shape, and a very fast effective coarsening rate. These requirements are met in anisotropically strained Ce(1-x)Gd(x)O(2-y) nanowires with the (011) orientation grown on the (001) surface of LaAlO(3) substrates. Nanowires with aspect ratios above ≈100 oriented along two mutually orthogonal axes are obtained leading to labyrinthine networks. A very fast effective nanowire growth rate (≈60 nm min(-1)) for ex-situ thermally annealed nanostructures derives from simultaneous kinetic processes occurring in a branched network. Ostwald ripening and anisotropic dynamic coalescence, both promoted by strain-driven attractive nanowire interaction, and rapid recrystallization, enabled by fast atomic diffusion associated with a high concentration of oxygen vacancies, contribute to such an effective growth rate. This bottom-up approach to self-organized nanowire growth has a wide potential for many materials and functionalities.
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Affiliation(s)
- Marta Gibert
- Institut de Ciència de Materials de Barcelona ICMAB-CSIC, 08193 Bellaterra, Catalonia, Spain
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92
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Habas SE, Platt HAS, van Hest MFAM, Ginley DS. Low-Cost Inorganic Solar Cells: From Ink To Printed Device. Chem Rev 2010; 110:6571-94. [PMID: 20973478 DOI: 10.1021/cr100191d] [Citation(s) in RCA: 382] [Impact Index Per Article: 27.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Susan E. Habas
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States
| | - Heather A. S. Platt
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States
| | - Maikel F. A. M. van Hest
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States
| | - David S. Ginley
- National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, United States
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93
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Okimoto H, Takenobu T, Yanagi K, Miyata Y, Shimotani H, Kataura H, Iwasa Y. Tunable carbon nanotube thin-film transistors produced exclusively via inkjet printing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:3981-3986. [PMID: 20730813 DOI: 10.1002/adma.201000889] [Citation(s) in RCA: 45] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Affiliation(s)
- Haruya Okimoto
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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94
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95
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Holman ZC, Liu CY, Kortshagen UR. Germanium and silicon nanocrystal thin-film field-effect transistors from solution. NANO LETTERS 2010; 10:2661-2666. [PMID: 20533841 DOI: 10.1021/nl101413d] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging field of semiconductor nanocrystal thin film devices. We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films. Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0.02 and 0.006 cm(2) V(-1) s(-1), respectively. Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology.
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Affiliation(s)
- Zachary C Holman
- Mechanical Engineering Department, University of Minnesota, Minneapolis, Minnesota 55455, USA
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96
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Kim MG, Kim HS, Ha YG, He J, Kanatzidis MG, Facchetti A, Marks TJ. High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors. J Am Chem Soc 2010; 132:10352-64. [DOI: 10.1021/ja100615r] [Citation(s) in RCA: 208] [Impact Index Per Article: 14.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Myung-Gil Kim
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Hyun Sung Kim
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Young-Geun Ha
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Jiaqing He
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Mercouri G. Kanatzidis
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Antonio Facchetti
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
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97
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98
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Adamczyk AJ, Reyniers MF, Marin GB, Broadbelt LJ. Hydrogenated amorphous silicon nanostructures: novel structure–reactivity relationships for cyclization and ring opening in the gas phase. Theor Chem Acc 2010. [DOI: 10.1007/s00214-010-0767-x] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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99
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Sugiyama Y, Okamoto H, Mitsuoka T, Morikawa T, Nakanishi K, Ohta T, Nakano H. Synthesis and Optical Properties of Monolayer Organosilicon Nanosheets. J Am Chem Soc 2010; 132:5946-7. [PMID: 20387885 DOI: 10.1021/ja100919d] [Citation(s) in RCA: 64] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Yusuke Sugiyama
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Hirotaka Okamoto
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Takuya Mitsuoka
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Takeshi Morikawa
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Koji Nakanishi
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Toshiaki Ohta
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
| | - Hideyuki Nakano
- Toyota Central R&D Laboratories., Inc., Nagakute, Aichi 480-1192, Japan, and SR Center, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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100
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Singh M, Haverinen HM, Dhagat P, Jabbour GE. Inkjet printing-process and its applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:673-685. [PMID: 20217769 DOI: 10.1002/adma.200901141] [Citation(s) in RCA: 761] [Impact Index Per Article: 54.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
In this Progress Report we provide an update on recent developments in inkjet printing technology and its applications, which include organic thin-film transistors, light-emitting diodes, solar cells, conductive structures, memory devices, sensors, and biological/pharmaceutical tasks. Various classes of materials and device types are in turn examined and an opinion is offered about the nature of the progress that has been achieved.
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Affiliation(s)
- Madhusudan Singh
- School of Materials, Arizona State University Tempe, AZ 85287, USA
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