Local electrostatic imaging of striped domain order in LaAlO3/SrTiO3

Coupling of GHz phonons to ferroelastic domain walls in SrTiO3

We study the linear and nonlinear acoustic response of SrTiO3 across its ferroelastic transition at Ta=105  K by time domain Brillouin scattering. Above Ta we observe that for a strain amplitude of ∼0.18% the sound velocity for compressive strain exceeds the tensile strain velocity by 3%. Below Ta we find a giant slowing down of the sound velocity by 12% and attribute this to the coupling of GHz phonons to ferroelastic twin domain walls. We propose a new mechanism for this coupling on the ultrafast time scale, providing an important new test ground for theories used to simulate atomic motion in domain forming crystals.

Long-range electronic reconstruction to a dxz,yz-dominated Fermi surface below the LaAlO₃/SrTiO₃ interface

Low dimensionality, broken symmetry and easily-modulated carrier concentrations provoke novel electronic phase emergence at oxide interfaces. However, the spatial extent of such reconstructions - i.e. the interfacial "depth" - remains unclear. Examining LaAlO₃/SrTiO₃ heterostructures at previously unexplored carrier densities n(2D) ≥ 6.9 × 10(14) cm(-2), we observe a Shubnikov-de Haas effect for small in-plane fields, characteristic of an anisotropic 3D Fermi surface with preferential dxz,yz orbital occupancy extending over at least 100 nm perpendicular to the interface. Quantum oscillations from the 3D Fermi surface of bulk doped SrTiO₃ emerge simultaneously at higher n(2D). We distinguish three areas in doped perovskite heterostructures: narrow (<20 nm) 2D interfaces housing superconductivity and/or other emergent phases, electronically isotropic regions far (>120 nm) from the interface and new intermediate zones where interfacial proximity renormalises the electronic structure relative to the bulk.

One-dimensional quantum wire formed at the boundary between two insulating LaAlO3/SrTiO3 interfaces

We grow a tiled structure of insulating two-dimensional LaAlO3/SrTiO3 interfaces composed of alternating one and three LaAlO3 unit cells. The boundary between two tiles is conducting. At low temperatures this conductance exhibits quantized steps as a function of gate voltage indicative of a one-dimensional channel. The step size of half the quantum of conductance is evidence for the absence of spin degeneracy.