51
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Chen R, Miao L, Liu C, Zhou J, Cheng H, Asaka T, Iwamoto Y, Tanemura S. Shape-controlled synthesis and influence of W doping and oxygen nonstoichiometry on the phase transition of VO2. Sci Rep 2015; 5:14087. [PMID: 26373612 PMCID: PMC4650710 DOI: 10.1038/srep14087] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2015] [Accepted: 08/18/2015] [Indexed: 11/15/2022] Open
Abstract
Monoclinic VO2(M) in nanostructure is a prototype material for
interpreting correlation effects in solids with fully reversible phase transition
and for the advanced applications to smart devices. Here, we report a facile
one-step hydrothermal method for the controlled growth of single crystalline
VO2(M/R) nanorods. Through tuning the hydrothermal temperature,
duration of the hydrothermal time and W-doped level, single crystalline
VO2(M/R) nanorods with controlled aspect ratio can be synthesized in
large quantities, and the crucial parameter for the shape-controlled synthesis is
the W-doped content. The dopant greatly promotes the preferential growth of (110) to
form pure phase VO2(R) nanorods with high aspect ratio for the W-doped
level = 2.0 at% sample. The shape-controlled process of
VO2(M/R) nanorods upon W-doping are systematically studied. Moreover,
the phase transition temperature (Tc) of VO2 depending on
oxygen nonstoichiometry is investigated in detail.
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Affiliation(s)
- Ru Chen
- Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, P. R. China.,University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Lei Miao
- Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, P. R. China.,Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Chengyan Liu
- Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Jianhua Zhou
- Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Haoliang Cheng
- Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, P. R. China
| | - Toru Asaka
- Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555, Japan
| | - Yuji Iwamoto
- Department of Frontier Materials, Graduate School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, 466-8555, Japan
| | - Sakae Tanemura
- Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, P. R. China.,Guangxi Key Laboratory of Information Material, Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
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52
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Wu Y, Fan L, Liu Q, Chen S, Huang W, Chen F, Liao G, Zou C, Wu Z. Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti(4+)) Doping. Sci Rep 2015; 5:9328. [PMID: 25950809 PMCID: PMC4423444 DOI: 10.1038/srep09328] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2014] [Accepted: 02/26/2015] [Indexed: 11/09/2022] Open
Abstract
The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti(4+)-doped VO2 (Ti(x)V(1-x)O2) system. It was observed that the TC of Ti(x)V(1-x)O2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in Ti(x)V(1-x)O2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials.
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Affiliation(s)
- Yanfei Wu
- State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing. 100871, People's Republic of China
| | - Lele Fan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Qinghua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Shi Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Weifeng Huang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Feihu Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Guangming Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Chongwen Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China
| | - Ziyu Wu
- 1] National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China [2] Institute of High Energy Physics, Chinese Academy of Science, Beijing. 100049, People's Republic of China
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53
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Chen FH, Fan LL, Chen S, Liao GM, Chen YL, Wu P, Song L, Zou CW, Wu ZY. Control of the metal-insulator transition in VO₂ epitaxial film by modifying carrier density. ACS APPLIED MATERIALS & INTERFACES 2015; 7:6875-6881. [PMID: 25751594 DOI: 10.1021/acsami.5b00540] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
External controlling the phase transition behavior of vanadium dioxide is important to realize its practical applications as energy-efficient electronic devices. Because of its relatively high phase transition temperature of 68 °C, the central challenge for VO2-based electronics, lies in finding an energy efficient way, to modulate the phase transition in a reversible and reproducible manner. In this work, we report an experimental realization of p-n heterojunctions by growing VO2 film on p-type GaN substrate. By adding the bias voltage on the p-n junction, the metal-insulator transition behavior of VO2 film can be changed continuously. It is demonstrated that the phase transition of VO2 film is closely associated with the carrier distribution within the space charge region, which can be directly controlled by the bias voltage. Our findings offer novel opportunities for modulating the phase transition of VO2 film in a reversible way as well as extending the concept of electric-field modulation on other phase transition materials.
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Affiliation(s)
- F H Chen
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - L L Fan
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - S Chen
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - G M Liao
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Y L Chen
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - P Wu
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Li Song
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - C W Zou
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
| | - Z Y Wu
- †National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, P.R. China
- ‡Institute of High Energy Physics, Chinese Academy of Science, Beijing 100049, P.R. China
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54
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He X, Zeng Y, Xu X, Gu C, Chen F, Wu B, Wang C, Xing H, Chen X, Chu J. Orbital change manipulation metal–insulator transition temperature in W-doped VO2. Phys Chem Chem Phys 2015; 17:11638-46. [DOI: 10.1039/c4cp04889j] [Citation(s) in RCA: 34] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Using ultraviolet-infrared spectroscopy and first principles calculations, it is revealed that changes in the orbital structure can regulate the W-doped VO2 phase transition temperature.
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Affiliation(s)
- Xinfeng He
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Yijie Zeng
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Xiaofeng Xu
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Congcong Gu
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Fei Chen
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Binhe Wu
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Chunrui Wang
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Huaizhong Xing
- Department of Applied Physics
- Donghua University
- Shanghai 201620
- P. R. China
| | - Xiaoshuang Chen
- National Laboratory for Infrared Physics
- Chinese Academy of Sciences
- Shanghai Institute of Technical Physics
- Shanghai 200083
- P. R. China
| | - Junhao Chu
- National Laboratory for Infrared Physics
- Chinese Academy of Sciences
- Shanghai Institute of Technical Physics
- Shanghai 200083
- P. R. China
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55
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Cui Y, Shi S, Chen L, Luo H, Gao Y. Hydrogen-doping induced reduction in the phase transition temperature of VO2: a first-principles study. Phys Chem Chem Phys 2015. [DOI: 10.1039/c5cp03267a] [Citation(s) in RCA: 36] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The phase transition temperature of H-doped VO2 is more sensitive to external strain as compared with that of pure VO2.
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Affiliation(s)
- Yuanyuan Cui
- School of Materials Science and Engineering
- Shanghai University
- Shanghai 200444
- China
| | - Siqi Shi
- School of Materials Science and Engineering
- Shanghai University
- Shanghai 200444
- China
- Materials Genome Institute
| | - Lanli Chen
- School of Materials Science and Engineering
- Shanghai University
- Shanghai 200444
- China
| | - Hongjie Luo
- School of Materials Science and Engineering
- Shanghai University
- Shanghai 200444
- China
- Materials Genome Institute
| | - Yanfeng Gao
- School of Materials Science and Engineering
- Shanghai University
- Shanghai 200444
- China
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56
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Sun X, Yao T, Hu Z, Guo Y, Liu Q, Wei S, Wu C. In situ unravelling structural modulation across the charge-density-wave transition in vanadium disulfide. Phys Chem Chem Phys 2015; 17:13333-9. [DOI: 10.1039/c5cp01326g] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Local structural evolution and electrical property variation in VS2 were analyzed via in situ X-ray absorption fine structure measurement and theoretical calculations.
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Affiliation(s)
- Xu Sun
- Hefei National Laboratory for Physical Sciences at the Microscale and iChEM (Collaborative Innovation Center of Chemistry for Energy Materials)
- University of Science and Technology of China
- Hefei 230026
- P. R. China
| | - Tao Yao
- National Synchrotron Radiation Laboratory
- University of Science and Technology of China
- Hefei
- P. R. China
| | - Zhenpeng Hu
- School of Physics
- Nankai University
- Tianjin
- P. R. China
| | - Yuqiao Guo
- Hefei National Laboratory for Physical Sciences at the Microscale and iChEM (Collaborative Innovation Center of Chemistry for Energy Materials)
- University of Science and Technology of China
- Hefei 230026
- P. R. China
| | - Qinghua Liu
- National Synchrotron Radiation Laboratory
- University of Science and Technology of China
- Hefei
- P. R. China
| | - Shiqiang Wei
- National Synchrotron Radiation Laboratory
- University of Science and Technology of China
- Hefei
- P. R. China
| | - Changzheng Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and iChEM (Collaborative Innovation Center of Chemistry for Energy Materials)
- University of Science and Technology of China
- Hefei 230026
- P. R. China
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57
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Chen JL, Chang CC, Ho YK, Chen CL, Hsu CC, Jang WL, Wei DH, Dong CL, Pao CW, Lee JF, Chen JM, Guo J, Wu MK. Behind the color switching in gasochromic VO2. Phys Chem Chem Phys 2014; 17:3482-9. [PMID: 25533311 DOI: 10.1039/c4cp04623d] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Gasochromic VO2 thin films were fabricated by the sol-gel spin-coating technique. The results of X-ray absorption spectroscopy and resonant inelastic X-ray scattering spectroscopy reveal that the origin of gasochromic coloration in VO2 is strongly related to the modulation of its structure and the electron-electron correlation. Upon gasochromic coloration, not only does the valence state change with the incorporation of hydrogen, but also the film undergoes the modification of the local atomic structure. The structural distortion varies the strength of hybridization of the O 2p-V 3d states and the bond distance of V-O and V-O varies. In the hydric process, the local atomic structure of VO2 changes from that of an un-symmetric to that of a symmetric V-O framework. The incorporated hydrogen adds electrons into the V 3d t2g orbital, enhancing the electron-electron correlation by reducing the V-V distance. This work presents a new physical insight in which the modulation of the electron-electron correlation is exploited to control the bleached and colored states, giving rise to the gasochromic phenomenon. The strong correlation among atomic spatial rearrangement, electronic structures, and transmittance supports a cooperative mechanism of the VO2 gasochromic transition. These results reveal a clear correlation between the dynamics of the lattice structure and the electronic properties and suggest a possible pathway to gasochromism and elucidation of its mechanism.
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Affiliation(s)
- Jeng-Lung Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan.
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58
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Jia F, Zhang S, Zhang X, Peng X, Zhang H, Xiang Y. Sb-Triggered β-to-α Transition: Solvothermal Synthesis of Metastable α-Cu2Se. Chemistry 2014; 20:15941-6. [DOI: 10.1002/chem.201403797] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/03/2014] [Indexed: 11/09/2022]
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59
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Long L, Ye H. How to be smart and energy efficient: a general discussion on thermochromic windows. Sci Rep 2014; 4:6427. [PMID: 25233891 PMCID: PMC4168269 DOI: 10.1038/srep06427] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/23/2014] [Accepted: 08/29/2014] [Indexed: 11/24/2022] Open
Abstract
A window is a unique element in a building because of its simultaneous properties of being “opaque” to inclement weather yet transparent to the observer. However, these unique features make the window an element that can reduce the energy efficiency of buildings. A thermochromic window is a type of smart window whose solar radiation properties vary with temperature. It is thought that the solar radiation gain of a room can be intelligently regulated through the use of thermochromic windows, resulting in lower energy consumption than with standard windows. Materials scientists have made many efforts to improve the performance of thermochromic materials. Despite these efforts, fundamental problems continue to confront us. How should a “smart” window behave? Is a “smart” window really the best candidate for energy-efficient applications? What is the relationship between smartness and energy performance? To answer these questions, a general discussion of smartness and energy performance is provided.
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Affiliation(s)
- Linshuang Long
- Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei, Anhui 230027, PR China
| | - Hong Ye
- Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Hefei, Anhui 230027, PR China
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60
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Lin J, Ji H, Swift MW, Hardy WJ, Peng Z, Fan X, Nevidomskyy AH, Tour JM, Natelson D. Hydrogen diffusion and stabilization in single-crystal VO2 micro/nanobeams by direct atomic hydrogenation. NANO LETTERS 2014; 14:5445-5451. [PMID: 25148601 DOI: 10.1021/nl5030694] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ∼340 K between a high-temperature, rutile, metallic phase and a low-temperature, monoclinic, insulating phase with a resistance exhibiting a semiconductor-like temperature dependence. Atomic hydrogenation results in stabilization of the metallic phase of VO2 micro/nanobeams down to 2 K, the lowest point we could reach in our measurement setup. Optical characterization shows that hydrogen atoms prefer to diffuse along the c axis of rutile (a axis of monoclinic) VO2, along the oxygen "channels". Based on observing the movement of the hydrogen diffusion front in single crystalline VO2 beams, we estimate the diffusion constant for hydrogen along the c axis of the rutile phase to be 6.7 × 10(-10) cm(2)/s at approximately 373 K, exceeding the value in isostructural TiO2 by ∼38×. Moreover, we find that the diffusion constant along the c axis of the rutile phase exceeds that along the equivalent a axis of the monoclinic phase by at least 3 orders of magnitude. This remarkable change in kinetics must originate from the distortion of the "channels" when the unit cell doubles along this direction upon cooling into the monoclinic structure. Ab initio calculation results are in good agreement with the experimental trends in the relative kinetics of the two phases. This raises the possibility of a switchable membrane for hydrogen transport.
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Affiliation(s)
- Jian Lin
- Department of Mechanical Engineering and Material Science, ‡Smalley Institute for Nanoscale Science and Technology, §Department of Physics and Astronomy, ⊥Department of Chemistry, ∥Department of Electrical and Computer Engineering, Rice University , 6100 Main Street, Houston, Texas 77005, United States
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61
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Fan LL, Chen S, Luo ZL, Liu QH, Wu YF, Song L, Ji DX, Wang P, Chu WS, Gao C, Zou CW, Wu ZY. Strain dynamics of ultrathin VO₂ film grown on TiO₂ (001) and the associated phase transition modulation. NANO LETTERS 2014; 14:4036-4043. [PMID: 24956434 DOI: 10.1021/nl501480f] [Citation(s) in RCA: 42] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Tuning the metal insulator transition (MIT) behavior of VO2 film through the interfacial strain is effective for practical applications. However, the mechanism for strain-modulated MIT is still under debate. Here we directly record the strain dynamics of ultrathin VO2 film on TiO2 substrate and reveal the intrinsic modulation process by means of synchrotron radiation and first-principles calculations. It is observed that the MIT process of the obtained VO2 films can be modulated continuously via the interfacial strain. The relationship between the phase transition temperature and the strain evolution is established from the initial film growth. From the interfacial strain dynamics and theoretical calculations, we claim that the electronic orbital occupancy is strongly affected by the interfacial strain, which changes also the electron-electron correlation and controls the phase transition temperature. These findings open the possibility of an active tuning of phase transition for the thin VO2 film through the interfacial lattice engineering.
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Affiliation(s)
- L L Fan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei 230029 People's Republic of China
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62
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Wu Y, Fan L, Huang W, Chen S, Chen S, Chen F, Zou C, Wu Z. Depressed transition temperature of WxV1−xO2: mechanistic insights from the X-ray absorption fine structure (XAFS) spectroscopy. Phys Chem Chem Phys 2014; 16:17705-14. [DOI: 10.1039/c4cp01661k] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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63
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Song Q, Gong W, Ning G, Mehdi H, Zhang G, Ye J, Lin Y. A synergic effect of sodium on the phase transition of tungsten-doped vanadium dioxide. Phys Chem Chem Phys 2014; 16:8783-6. [DOI: 10.1039/c4cp00366g] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A synergic effect of sodium on the metal–insulator transition temperature reduction of tungsten-doped vanadium dioxide is noted.
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Affiliation(s)
- Qiang Song
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Weitao Gong
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Guiling Ning
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Hassan Mehdi
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Guiqi Zhang
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Junwei Ye
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
| | - Yuan Lin
- State Key Laboratory of Fine Chemicals and Faculty of Chemical
- Environmental & Biological Science and Technology
- Dalian University of Technology
- Dalian 116012, P. R. China
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64
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Warnick KH, Wang B, Cliffel DE, Wright DW, Haglund RF, Pantelides ST. Room-temperature reactions for self-cleaning molecular nanosensors. NANO LETTERS 2013; 13:798-802. [PMID: 23320817 DOI: 10.1021/nl304598p] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
New sensing techniques for detecting molecules, especially self-cleaning sensors, are in demand. Here we describe a room-temperature process in which a nanostructured substrate catalyzes the reaction of a target molecule with atmospheric oxygen and the reaction energy is absorbed by the substrate, where it can in principle be detected. Specifically, we report first-principles calculations describing a reaction between 2,4-dinitrotoluene (DNT) and atmospheric O(2) catalyzed by Fe-porphyrin at room temperature, incorporating an oxygen into the methyl group of DNT and releasing 1.9 eV per reaction. The atomic oxygen left on the Fe site can be removed by reacting with another DNT molecule, restoring the Fe catalyst.
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Affiliation(s)
- Keith H Warnick
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA.
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65
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Wu C, Feng F, Xie Y. Design of vanadium oxide structures with controllable electrical properties for energy applications. Chem Soc Rev 2013; 42:5157-83. [DOI: 10.1039/c3cs35508j] [Citation(s) in RCA: 347] [Impact Index Per Article: 31.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
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