Epitaxial graphene on SiC{0001}: advances and perspectives

Dielectric environment as a factor to enhance the production yield of solvent exfoliated graphene

High yield production of high quality graphene is essential for its application in electronics, optoelectronics and energy storage devices.

Graphene layers on Si-face and C-face surfaces and interaction with Si and C atoms in layer controlled graphene growth on SiC substrates

It is important to understand the interface and interaction between graphene layers and SiC surfaces as well as the interaction of key intermediate Si and C atoms with these surfaces and interfaces in epitaxial graphene growth on SiC substrates.