Silicon quantum dots: surface matters

Influence of the surface termination on the light emission of crystalline silicon nanoparticles

The light emission properties of silicon crystalline nanoparticles (SiNPs) have been investigated using steady-state and time-resolved photoluminescence measurements carried out at 12 K and at room temperature. To enable a comparative study of the role of surface terminal groups on the optical properties, we investigated SiNPs-H ensembles with the same mean NP diameter but differing on the surface termination, namely organic-functionalized with 1-dodecene (SiNPs-C12) and H-terminated (SiNPs-H). We show that although the spectral dependence of the light emission is rather unaffected by surface termination, characterized by a single broad band peaking at ∼1.64 eV, both the exciton recombination lifetimes and quantum yields display a pronounced dependence on the surface termination. Exciton lifetimes and quantum yields are found to be significantly lower in SiNPs-H compared SiNPs-C12. This difference is due to distinct non-radiative recombination probabilities resulting from inter-NP exciton migration, which in SiNPs-C12 is inhibited by the energy barriers imposed by the bulky surface groups. The surface groups of organic-terminated SiPs are responsible for the inhibition of inter-NP exciton transfer, yielding a higher quantum yield compared to SiNPs-H. The surface oxidation of SiNPs-C12 leads to the appearance of a phenomenon of an exciton transference from to the Si core to oxide-related states that contribute to light emission. These excitons recombine radiatively, explaining why the emission quantum of the organic-terminated SiNPs is the same after surface oxidation of SiNPs-C12.

Light-Harvesting Antennae Based on Silicon Nanocrystals

Silicon (Si) nanocrystals are relatively strong light emitters, but are weak light absorbers as a result of their indirect band gap. One way to enhance light absorption is to functionalize the nanocrystals with chromophores that are strong light absorbers. By designing systems that enable efficient energy transfer from the chromophore to the Si nanocrystal, the brightness of the nanocrystals can be significantly increased. There have now been a few experimental systems in which covalent attachment of chromophores, efficient energy transfer and significantly increased brightness have been demonstrated. This review discusses progress on these systems and the remaining challenges.

Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots

The optical properties of silicon quantum dots (Si QDs) are strongly influenced by circumjacent surface-adsorbed molecules, which would highly affect their applications; however, water, as the ubiquitous environment, has not received enough attention yet. We employed the time-dependent density functional calculations to investigate the water effect of photoluminescence (PL) spectra for Si QDs. In contrast with the absorption spectra, PL spectra exhibit distinct characteristics. For Si32H38, PL presents the single maximum in the dry and humid environment, while the emission spectrum displays a dual-band fluorescence spectroscopy in the low-humidity environment. This phenomenon is also observed in the larger Si QDs. The distinct character in spectroscopy is dominated by the stretching of the Si-Si bond, which could be explained by the self-trapped exciton model. Our results shed light on the Si-water interaction that is important for the development of optical devices based on Si-coated surfaces.

Size-Dependence of Acceptor and Donor Levels of Boron and Phosphorus Codoped Colloidal Silicon Nanocrystals

Size dependence of the boron (B) acceptor and phosphorus (P) donor levels of silicon (Si) nanocrystals (NCs) measured from the vacuum level was obtained in a very wide size range from 1 to 9 nm in diameter by photoemission yield spectroscopy and photoluminescence spectroscopy for B and P codoped Si-NCs. In relatively large Si-NCs, both levels are within the bulk Si band gap. The levels exhibited much smaller size dependence compared to the valence band and conduction band edges. The Fermi level of B and P codoped Si-NCs was also studied. It was found that the Fermi level of relatively large codoped Si-NCs is close to the valence band and it approaches the middle of the band gap with decreasing the size. The results suggest that below a certain size perfectly compensated Si-NCs, that is, Si-NCs with exactly the same number of active B and P, are preferentially grown, irrespective of average B and P concentrations in samples.

Quasi-Direct Optical Transitions in Silicon Nanocrystals with Intensity Exceeding the Bulk

Comparison of the measured absolute absorption cross section on a per Si atom basis of plasma-synthesized Si nanocrystals (NCs) with the absorption of bulk crystalline Si shows that while near the band edge the NC absorption is weaker than the bulk, yet above ∼ 2.2 eV the NC absorbs up to 5 times more than the bulk. Using atomistic screened pseudopotential calculations we show that this enhancement arises from interface-induced scattering that enhances the quasi-direct, zero-phonon transitions by mixing direct Γ-like wave function character into the indirect X-like conduction band states, as well as from space confinement that broadens the distribution of wave functions in k-space. The absorption enhancement factor increases exponentially with decreasing NC size and is correlated with the exponentially increasing direct Γ-like wave function character mixed into the NC conduction states. This observation and its theoretical understanding could lead to engineering of Si and other indirect band gap NC materials for optical and optoelectronic applications.

Size-Dependent Exciton Formation Dynamics in Colloidal Silicon Quantum Dots

We report size-dependent exciton formation dynamics within colloidal silicon quantum dots (Si QDs) using time-resolved terahertz (THz) spectroscopy measurements. THz photoconductivity measurements are used to distinguish the initially created hot carriers from excitons that form at later times. At early pump/probe delays, the exciton formation dynamics are revealed by the temporal evolution of the THz transmission. We find an increase in the exciton formation time, from ∼500 to ∼900 fs, as the Si QD diameter is reduced from 7.3 to 3.4 nm and all sizes exhibit slower hot-carrier relaxation times compared to bulk Si. In addition, we determine the THz absorption cross section at early delay times is proportional to the carrier mobility while at later delays is proportional to the exciton polarizability, αX. We extract a size-dependent αX and find an ∼r(4) dependence, consistent with previous reports for quantum-confined excitons in CdSe, InAs, and PbSe QDs. The observed slowing in exciton formation time for smaller Si QDs is attributed to decreased electron-phonon coupling due to increased quantum confinement. These results experimentally verify the modification of hot-carrier relaxation rates by quantum confinement in Si QDs, which likely plays a significant role in the high carrier multiplication efficiency observed in these nanomaterials.

Lasing from Glassy Ge Quantum Dots in Crystalline Si

Semiconductor light-emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices. Light sources based on group IV elements would be SIT-compatible, but suffer from the poor optoelectronic properties of bulk Si and Ge. Here we demonstrate that epitaxially grown Ge quantum dots (QDs) in a defect-free Si matrix show extraordinary optical properties if partially amorphized by Ge-ion bombardment (GIB). In contrast to conventional SiGe nanostructures, these QDs exhibit dramatically shortened carrier lifetimes and negligible thermal quenching of the photoluminescence (PL) up to room temperature. Microdisk resonators with embedded GIB-QDs exhibit threshold behavior as well as a superlinear increase of the integrated PL intensity with concomitant line width narrowing as the pump power increases. These findings demonstrate light amplification by stimulated emission in a fully SIT-compatible group IV nanosystem.

Emission efficiency limit of Si nanocrystals

One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use of a low-temperature hydrogen passivation treatment we demonstrate a maximum emission quantum efficiency of approximately 35%. This is the highest value ever reported for this type of material. By cross-correlating PL lifetime with EQE values, we obtain a comprehensive understanding of the efficiency limiting processes induced by Pb-defects. We establish that the observed record efficiency corresponds to an interface density of Pb-centers of 1.3 × 10(12) cm(12), which is 2 orders of magnitude higher than for the best Si/SiO2 interface. This result implies that Si nanocrystals with up to 100% emission efficiency are feasible.

Size confinement of Si nanocrystals in multinanolayer structures

Si nanocrystals (NCs) are often prepared by thermal annealing of multiple stacks of alternating sub-stoichiometric SiOx and SiO2 nanolayers. It is frequently claimed that in these structures, the NC diameter can be predefined by the thickness of the SiOx layer, while the NC concentration is independently controlled by the stoichiometry parameter x. However, several detailed structural investigations report that the NC size confinement to within the thickness of the SiOx layer is not strictly obeyed. In this study we address these contradicting findings: based on cross-correlation between structural and optical characterization of NCs grown in a series of purposefully prepared samples of different stoichiometry and layer thickness, we develop a comprehensive understanding of NC formation by Si precipitation in multinanolayer structures. We argue that the narrow NC size distribution generally observed in these materials appears due to reduction of the Si diffusion range, imposed by the SiO2 spacer layer. Therefore, both the SiOx layer thickness and composition as well as the actual thickness of the SiO2 spacer play an essential role in the NC formation.

Enhanced Luminescent Stability through Particle Interactions in Silicon Nanocrystal Aggregates

Close-packed assemblies of ligand-passivated colloidal nanocrystals can exhibit enhanced photoluminescent stability, but the origin of this effect is unclear. Here, we use experiment, simulation, and ab initio computation to examine the influence of interparticle interactions on the photoluminescent stability of silicon nanocrystal aggregates. The time-dependent photoluminescence emitted by structures ranging in size from a single quantum dot to agglomerates of more than a thousand is compared with Monte Carlo simulations of noninteracting ensembles using measured single-particle blinking data as input. In contrast to the behavior typically exhibited by the metal chalcogenides, the measured photoluminescent stability shows an enhancement with respect to the noninteracting scenario with increasing aggregate size. We model this behavior using time-dependent density functional theory calculations of energy transfer between neighboring nanocrystals as a function of nanocrystal size, separation, and the presence of charge and/or surface-passivation defects. Our results suggest that rapid exciton transfer from "bright" nanocrystals to surface trap states in nearest-neighbors can efficiently fill such traps and enhance the stability of emission by promoting the radiative recombination of slowly diffusing excited electrons.

High Efficiency Hybrid Solar Cells Using Nanocrystalline Si Quantum Dots and Si Nanowires

We report on an efficient hybrid Si nanocrystal quantum dot modified radial p-n junction thinner Si solar cell that utilizes the advantages of effective exciton collection by energy transfer from nanocrystal-Si (nc-Si) quantum dots to underlying radial p-n junction Si nanowire arrays with excellent carrier separation and propagation via the built-in electric fields of radial p-n junctions. Minimization of recombination, optical, and spectrum losses in this hybrid structure led to a high cell efficiency of 12.9%.

Development of magnetic separation and quantum dots labeled immunoassay for the detection of mercury in biological samples

A rapid and sensitive immunoassays of mercury (Hg) in biological samples was developed using quantum dots (QDs) and magnetic beads (MBs) as fluorescent and separated probes, respectively. A monoclonal antibody (mAb) that recognizes an Hg detection antigen (BSA-DTPA-Hg) complex was produced by the injection of BALB/c mice with an Hg immunizing antigen (KLH-DTPA-Hg). Then the ascites monoclonal antibodies were purified. The Hg monoclonal antibody (Hg-mAb) is conjugated with MBs to separate Hg from biological samples, and the other antibody, which is associated with QDs, is used to detect the fluorescence. The Hg in biological samples can be quantified using the relationship between the QDs fluorescence intensity and the concentration of Hg in biological samples following magnetic separation. In this method, the detection linear range is 1-1000ng/mL, and the minimum detection limit is 1ng/mL. The standard addition recovery rate was 94.70-101.18%. The relative standard deviation values were 2.76-7.56%. Furthermore, the Hg concentration can be detected in less than 30min, the significant interference of other heavy metals can be avoided, and the simultaneous testing of 96 samples can be performed. These results indicate that the method could be used for rapid monitoring Hg in the body.

Structural and optical characterization of self-assembled Ge nanocrystal layers grown by plasma-enhanced chemical vapor deposition

We present a structural and optical study of solid-state dispersions of Ge nanocrystals prepared by plasma-enhanced chemical vapor deposition. Structural analysis shows the presence of nanocrystalline germanium inclusions embedded in an amorphous matrix of Si-rich SiO(2).Optical characterization reveals two prominent emission bands centered around 2.6 eV and 3.4 eV, and tunable by excitation energy. In addition, the lower energy band shows an excitation power-dependent blue shift of up to 0.3 eV. Decay dynamics of the observed emission contains fast (nanosecond) and slow (microseconds) components, indicating contributions of several relaxation channels. Based on these material characteristics, a possible microscopic origin of the individual emission bands is discussed.